MGF4961B [MITSUBISHI]

SUPER LOW NOISE InGaAs HEMT; 超低噪音的InGaAs HEMT
MGF4961B
元器件型号: MGF4961B
生产厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用:

SUPER LOW NOISE InGaAs HEMT
超低噪音的InGaAs HEMT

PDF文件: 总4页 (文件大小:111K)
下载文档:  下载PDF数据表文档文件
型号参数:MGF4961B参数

MGF4963BL

Low Noise GaAs HEMT

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101 MITSUBISHI

MGF4964BL

Low Noise GaAs HEMT

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134 MITSUBISHI

MGF65A3H

Trench Field Stop IGBTs with Fast Recovery Diode

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0 SANKEN

MGF65A4H

Trench Field Stop IGBTs with Fast Recovery Diode

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2 SANKEN

MGF65A6L

VCE = 650 V, IC = 60 A Trench Field Stop IGBTs with Fast Recovery Diode

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0 SANKEN

MGF-7002A

RF/Microwave Amplifier, GAAS

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0 MITSUBISHI

MGF7004

Transistor

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0 MITSUBISHI

MGF7006

Wide Band Low Power Amplifier, 200MHz Min, 1800MHz Max,

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0 MITSUBISHI

MGF7006-01

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

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0 MITSUBISHI

MGF7051A

SPDT, 800MHz Min, 2000MHz Max, 1.5dB Insertion Loss-Max

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0 MITSUBISHI

MGF7103-01

Narrow Band Medium Power Amplifier, 824MHz Min, 849MHz Max,

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1 MITSUBISHI

MGF7104-01

Narrow Band Medium Power Amplifier, 872MHz Min, 905MHz Max,

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0 MITSUBISHI

MGF7105-01

Narrow Band Medium Power Amplifier, 890MHz Min, 915MHz Max,

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0 MITSUBISHI

MGF7108A

Narrow Band Medium Power Amplifier, 898MHz Min, 925MHz Max, GAAS,

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0 MITSUBISHI

MGF7108A

Narrow Band Medium Power Amplifier, 898MHz Min, 925MHz Max, GAAS,

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0 MITSUBISHI