MGFK36V4045 [MITSUBISHI]

14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET; 14.0-14.5GHz BAND 4W内部匹配的GaAs FET
MGFK36V4045
元器件型号: MGFK36V4045
生产厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用:

14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
14.0-14.5GHz BAND 4W内部匹配的GaAs FET

PDF文件: 总2页 (文件大小:95K)
下载文档:  下载PDF数据表文档文件
型号参数:MGFK36V4045参数

MGFK36V4045-01

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFK37V4045

14.0-14.5GHz BAND 5W INTERNALLY MATCHED GaAs FET

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22 MITSUBISHI

MGFK37V4045

X/Ku band internally matched power GaAs FET

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8 MITSUBISHI

MGFK37V4045

14.0-14.5GHz BAND 5W INTERNALLY MATCHED GaAs FET

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9 MITSUBISHI

MGFK37V4045_11

X/Ku band internally matched power GaAs FET

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16 MITSUBISHI

MGFK37V4045_97

14.0-14.5GHz BAND 5W INTERNALLY MATCHED GaAs FET

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6 MITSUBISHI

MGFK37V4045-01

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFK37V4045-51

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFK38A3745

13.75-14.50GHz BAND 6W INTERNALLY MATCHED GaAs FET

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27 MITSUBISHI

MGFK38A3745

X/Ku band internally matched power GaAs FET

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23 MITSUBISHI

MGFK38A3745_11

X/Ku band internally matched power GaAs FET

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18 MITSUBISHI

MGFK38V2228

12.2-12.8GHz BAND 6W INTERNALLY MATCHED GaAs FET

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23 MITSUBISHI

MGFK38V2228-01

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-14, 2 PIN

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0 MITSUBISHI

MGFK38V2228-51

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFK38V2732

12.7-13.2GHz BAND 6W INTERNALLY MATCHED GaAs FET

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14 MITSUBISHI