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RD06HVF1 [MITSUBISHI]

MOS FET type transistor specifically designed for VHF RF power amplifiers applications.; MOS FET型晶体管专为VHF射频功率放大器的应用而设计。

RD06HVF1


元器件型号：	RD06HVF1
生产厂家：	MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用：	MOS FET type transistor specifically designed for VHF RF power amplifiers applications. MOS FET型晶体管专为VHF射频功率放大器的应用而设计。晶体放大器晶体管射频功率放大器
PDF文件：	总8页 (文件大小：381K)
下载文档：	下载PDF数据表文档文件
型号参数：RD06HVF1参数

RD06HVF1_08

RF POWER MOS FET Silicon MOSFET Power Transistor 175MHz,6W

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19 MITSUBISHI

RD06HVF1_10

RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W

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19 MITSUBISHI

RD06HVF1_11

RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W

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28 MITSUBISHI

RD06HVF1-101

MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

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22 MITSUBISHI

RD06HVF1-101

MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

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111 MITSUBISHI

RD07

Silicon MOFSET Power Transistor

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279 MITSUBISHI

RD07MUS2B

RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz 7W

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189 MITSUBISHI

RD07MUS2B

RF POWER MOS FET Silicon MOSFET Power Transistor,175MHz,527MHz,7W

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550 MITSUBISHI

RD07MUS2B

RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W

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106 MITSUBISHI

RD07MUS2B_10

RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz 7W

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42 MITSUBISHI

RD07MUS2B_11

RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W

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67 MITSUBISHI

RD07MUS2B-T512

RF Power Field-Effect Transistor,

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3 MITSUBISHI

RD07MVS1

Silicon MOSFET Power Transistor,175MHz,520MHz,7W

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113 MITSUBISHI

RD07MVS1

Silicon MOFSET Power Transistor

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372 MITSUBISHI

RD07MVS1

Silicon MOSFET Power Transistor,175MHz,520MHz,7W

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72 MITSUBISHI

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