MSN08B1K [MORESEMI]
75V(D-S) N-Channel Enhancement Mode Power MOS FET;
| 型号： | MSN08B1K |
| 厂家： | 
MORE Semiconductor |
| 描述： | 75V(D-S) N-Channel Enhancement Mode Power MOS FET |
| 文件： | 总6页 (文件大小：524K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSN08B1K
75V(D-S) N-Channel
Enhancement Mode Power MOS FET
General Features
● VDS = 75V,ID =110A
RDS(ON) < 9mΩ @ VGS=10V (Typ:7.5mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Lead Free
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
PIN Configuration
Marking and pin assignment
Schematic diagram
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
MSN08B1K
MSN08B1K
TO-220-3L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
75
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VDS
±25
VGS
110
78
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
350
210
1.4
A
Maximum Power Dissipation
W
PD
Derating factor
Single pulse avalanche energy (Note 5)
W/℃
mJ
℃
EAS
1200
Operating Junction and Storage Temperature Range
-55 To 175
TJ,TSTG
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6
MSN08B1K
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 2)
RθJc
0.71
℃/W
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
BVDSS
IDSS
VGS=0V ID=250μA
VDS=75V,VGS=0V
VGS=±20V,VDS=0V
75
-
-
-
-
-
1
V
μA
nA
IGSS
-
±100
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=40A
VDS=5V,ID=40A
2
-
3
7.5
-
4
9.0
-
V
mΩ
S
60
Clss
Coss
Crss
-
-
-
4700
440
-
-
-
PF
PF
PF
VDS=30V,VGS=0V,
Output Capacitance
F=1.0MHz
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
260
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
21
39
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
VDD=30V, RL=1Ω
VGS=10V,RGEN=2.5Ω
Turn-Off Delay Time
70
Turn-Off Fall Time
24
Total Gate Charge
Qg
Qgs
Qgd
114
33
V
DS=30V,ID=30A,
GS=10V
Gate-Source Charge
V
Gate-Drain Charge
18
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
VSD
IS
VGS=0V,IS=20A
-
-
-
-
-
-
1.2
V
A
-
110
trr
TJ = 25°C, IF = 40A
di/dt = 100A/μs(Note3)
43
93
-
-
nS
nC
Reverse Recovery Charge
Forward Turn-On Time
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition：Tj=25℃,VDD=37.5V,VG=10V,L=0.5mH,Rg=25Ω
MORE Semiconductor Company Limited
http://www.moresemi.com
2/6
MSN08B1K
Test circuit
1）EAS test Circuit
2）Gate charge test Circuit
3）Switch Time Test Circuit
MORE Semiconductor Company Limited
http://www.moresemi.com
3/6
MSN08B1K
Typical Electrical and Thermal Characteristics (Curves)
Vds Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 1 Output Characteristics
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
ID- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson- Drain Current
Figure 6 Source- Drain Diode Forward
MORE Semiconductor Company Limited
http://www.moresemi.com
4/6
MSN08B1K
Vds Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 Power De-rating
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
MORE Semiconductor Company Limited
http://www.moresemi.com
5/6
MSN08B1K
TO-220-3L Package Information
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
4.400
2.250
0.710
1.170
0.330
1.200
9.910
8.9500
12.650
Max.
4.600
2.550
0.910
1.370
0.650
1.400
10.250
9.750
12.950
Min.
0.173
0.089
0.028
0.046
0.013
0.047
0.390
0.352
0.498
Max.
0.181
0.100
0.036
0.054
0.026
0.055
0.404
0.384
0.510
A
A1
b
b1
c
c1
D
E
E1
e
2.540 TYP.
0.100 TYP.
e1
F
4.980
2.650
7.900
0.000
12.900
2.850
5.180
2.950
8.100
0.300
13.400
3.250
0.196
0.104
0.311
0.000
0.508
0.112
0.204
0.116
0.319
0.012
0.528
0.128
H
h
L
L1
V
7.500 REF.
0.295 REF.
Φ
3.400
3.800
0.134
0.150
MORE Semiconductor Company Limited
http://www.moresemi.com
6/6
相关型号：
©2020 ICPDF网 联系我们和版权申明