1N5822 [MOTOROLA]
SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS; 肖特基势垒整流器3.0安培20 ， 30 ， 40伏
| 型号： | 1N5822 |
| 厂家： | 
MOTOROLA |
| 描述： | SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS |
| 文件： | 总6页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by 1N5820/D
SEMICONDUCTOR TECHNICAL DATA
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features chrome barrier metal,
epitaxial construction with oxide passivation and metal overlap contact. Ideally
suited for use as rectifiers in low–voltage, high–frequency inverters, free
wheeling diodes, and polarity protection diodes.
1N5820 and 1N5822 are
Motorola Preferred Devices
•
•
•
Extremely Low v
F
Low Power Loss/High Efficiency
Low Stored Charge, Majority Carrier Conduction
SCHOTTKY BARRIER
RECTIFIERS
Mechanical Characteristics:
3.0 AMPERES
•
•
•
Case: Epoxy, Molded
Weight: 1.1 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
20, 30, 40 VOLTS
•
Lead and Mounting Surface Temperature for Soldering Purposes: 220°C
Max. for 10 Seconds, 1/16″ from case
•
•
Shipped in plastic bags, 5,000 per bag
Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the
part number
•
•
Polarity: Cathode indicated by Polarity Band
Marking: 1N5820, 1N5821, 1N5822
CASE 267–03
PLASTIC
MAXIMUM RATINGS
Rating
Symbol
1N5820
1N5821
1N5822
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
20
30
40
V
RRM
RWM
R
V
Non–Repetitive Peak Reverse Voltage
RMS Reverse Voltage
V
24
14
36
21
48
28
V
V
A
RSM
V
R(RMS)
3.0
Average Rectified Forward Current (2)
I
O
V
0.2 V
, T = 95°C
L
R(equiv)
R(dc)
(R = 28°C/W, P.C. Board Mounting, see Note 2)
θJA
Ambient Temperature
Rated V ( , P
T
A
90
85
80
°C
= 0
R dc) F(AV)
= 28°C/W
R
θJA
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, half wave, single phase
I
80 (for one cycle)
A
FSM
60 Hz, T = 75°C)
L
Operating and Storage Junction Temperature Range
(Reverse Voltage applied)
T , T
stg
65 to +125
150
°C
°C
J
Peak Operating Junction Temperature (Forward Current applied)
T
J(pk)
*THERMAL CHARACTERISTICS (Note 2)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
28
°C/W
θJA
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32″ from case.
* Indicates JEDEC Registered Data for 1N5820–22.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Rev 2
Motorola, Inc. 1996
*ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (2)
L
Characteristic
Symbol
1N5820
1N5821
1N5822
Unit
Maximum Instantaneous Forward Voltage (1)
V
F
V
(i = 1.0 Amp)
0.370
0.475
0.850
0.380
0.500
0.900
0.390
0.525
0.950
F
(i = 3.0 Amp)
F
(i = 9.4 Amp)
F
Maximum Instantaneous Reverse Current @ Rated dc Voltage (1)
i
R
mA
T
L
T
L
= 25°C
= 100°C
2.0
20
2.0
20
2.0
20
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32″ from case.
* Indicates JEDEC Registered Data for 1N5820–22.
NOTE 1 — DETERMINING MAXIMUM RATINGS
Reverse power dissipation and the possibility of thermal runaway
must be considered when operating this rectifier at reverse voltages
The data of Figures 1, 2, and 3 is based upon dc conditions. For use
in common rectifier circuits, Table 1 indicates suggested factors for
an equivalent dc voltage to use for conservative design, that is:
above 0.1 V
equation (1).
. Proper derating may be accomplished by use of
RWM
V
= V
F
R(equiv)
(FM)
(4)
T
where T
T
= T
R
P
R
P
A(max)
A(max)
J(max)
J(max)
θJA F(AV)
θJA R(AV)
(1)
The factor F is derived by considering the properties of the various
rectifier circuits and the reverse characteristics of Schottky diodes.
= Maximum allowable ambient temperature
= Maximum allowable junction temperature
(125°C or the temperature at which thermal
runaway occurs, whichever is lowest)
EXAMPLE: Find T
for 1N5821 operated in a 12–volt dc sup-
ply using a bridge circuit with capacitive filter such that I = 2.0 A
A(max)
DC
, R
(I
= 1.0 A), I
/I
(FM) (AV)
= 10, Input Voltage = 10 V =
(rms) θJA
F(AV)
P
P
R
= Average forward power dissipation
= Average reverse power dissipation
= Junction–to–ambient thermal resistance
F(AV)
R(AV)
θJA
40°C/W.
Step 1. Find V
Read F = 0.65 from Table 1,
R(equiv).
V
= (1.41) (10) (0.65) = 9.2 V.
R(equiv)
Figures 1, 2, and 3 permit easier use of equation (1) by taking
reverse power dissipation and thermal runaway into consideration.
The figures solve for a reference temperature as determined by
equation (2).
Step 2. Find T from Figure 2. Read T = 108°C
R
R
θJA
@ V = 9.2 V and R
R
= 40°C/W.
Step 3. Find P
from Figure 6. **Read P
= 0.85 W
F(AV)
I
F(AV)
T
= T
R
P
R
J(max)
Substituting equation (2) into equation (1) yields:
= T
θJA R(AV)
(2)
(FM)
@
I
10and I
1.0 A.
F(AV)
(AV)
Step 4. Find T
T
from equation (3).
T
R P
θJA F(AV)
A(max)
A(max)
A(max)
R
(3)
= 108
(0.85) (40) = 74°C.
Inspection of equations (2) and (3) reveals that T is the ambient
R
**Values given are for the 1N5821. Power is slightly lower for the
1N5820 because of its lower forward voltage, and higher for the
1N5822. Variations will be similar for the MBR–prefix devices, using
temperature at which thermal runaway occurs or where T = 125°C,
J
when forward power is zero. The transition from one boundary condi-
tion to the other is evident on the curves of Figures 1, 2, and 3 as a
difference in the rate of change of the slope in the vicinity of 115°C.
P
F(AV)
from Figure 7.
Table 1. Values for Factor F
Full Wave, Bridge
Full Wave,
Center Tapped*†
Circuit
Half Wave
Resistive
Load
Capacitive*
Resistive
0.5
Capacitive
Resistive
1.0
1.5
Capacitive
1.3
1.5
Sine Wave
Square Wave
0.5
1.3
1.5
0.65
0.75
0.75
2.0 V
0.75
*Note that V
. †Use line to center tap voltage for V .
in(PK) in
R(PK)
2
Rectifier Device Data
125
115
105
95
125
115
105
95
20
15
20
10
15
10
8.0
8.0
R
(°C/W) = 70
JA
R
(°C/W) = 70
JA
50
50
40
40
10
28
28
85
75
85
75
2.0
3.0
4.0
5.0
7.0
10
15
20
3.0
4.0
5.0
7.0
15
20
30
V
, REVERSE VOLTAGE (VOLTS)
V
, REVERSE VOLTAGE (VOLTS)
R
R
Figure 1. Maximum Reference Temperature
1N5820
Figure 2. Maximum Reference Temperature
1N5821
40
35
30
25
20
125
115
105
95
20
15
10
MAXIMUM
TYPICAL
8.0
R
(°C/W) = 70
JA
15
10
5.0
0
50
40
85
BOTH LEADS TO HEAT SINK,
EQUAL LENGTH
28
75
4.0
5.0
7.0
10
15
20
30
40
0
1/8
2/8
3/8
4/8
5/8
6/8
7/8
1.0
V
, REVERSE VOLTAGE (VOLTS)
L, LEAD LENGTH (INCHES)
R
Figure 3. Maximum Reference Temperature
1N5822
Figure 4. Steady–State Thermal Resistance
Rectifier Device Data
3
1.0
0.5
The temperature of the lead should be measured using a ther-
mocoupleplaced on the lead as close as possible to the tie point.
The thermal mass connected to the tie point is normally large
enough so that it will not significantly respond to heat surges
generated in the diode as a result of pulsed operation once
steady–state conditions are achieved. Using the measured val-
LEAD LENGTH = 1/4
″
0.3
0.2
P
P
pk
pk
DUTY CYCLE = t /t
p 1
t
p
PEAK POWER, P , is peak of an
pk
ue of T , the junction temperature may be determined by:
L
L
0.1
TIME
equivalent square power pulse.
[D + (1 – D) • r(t + t ) + r(t ) – r(t )] where:
JL
T
= T
+
T
JL
t
J
1
•
∆T
= P
R
0.05
JL
JL
pk
θ
1
p
p
1
∆
T
= the increase in junction temperature above the lead temperature.
0.03
0.02
r(t) = normalized value of transient thermal resistance at time, t, i.e.:
r(t + t ) = normalized value of transient thermal resistance at time
1
p
t
+ t , etc.
1
p
0.01
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
20 k
t, TIME (ms)
Figure 5. Thermal Response
NOTE 3 — APPROXIMATE THERMAL CIRCUIT MODEL
10
7.0
5.0
SINE WAVE
R
T
R
R
R
R
R
θS(K)
θ
S(A)
θ
L(A)
θ
J(A)
θJ(K)
θ
L(K)
I
(FM)
3.0
2.0
(Resistive Load)
T
A(K)
I
A(A)
P
dc
D
(AV)
T
T
T
T
T
L(K)
L(A)
C(A)
J
C(K)
5.0
10
20
1.0
0.7
0.5
SQUARE WAVE
Capacitive
Loads
Use of the above model permits junction to lead thermal resis-
tance for any mounting configuration to be found. For a given total
lead length, lowest values occur when one side of the rectifier is
brought as close as possible to the heat sink. Terms in the model
signify:
0.3
0.2
T
≈ 125°C
J
0.1
T
= Ambient Temperature
= Lead Temperature
T = Case Temperature
T = Junction Temperature
J
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
A
C
T
L
I
, AVERAGE FORWARD CURRENT (AMP)
F(AV)
R
R
R
= Thermal Resistance, Heat Sink to Ambient
= Thermal Resistance, Lead to Heat Sink
= Thermal Resistance, Junction to Case
θS
θL
θJ
Figure 6. Forward Power Dissipation 1N5820–22
P
P
P
= Total Power Dissipation = P + P
D
F
R
F
R
= Forward Power Dissipation
= Reverse Power Dissipation
(Subscripts (A) and (K) refer to anode and cathode sides, respec-
tively.) Values for thermal resistance components are:
R
R
= 42°C/W/in typically and 48°C/W/in maximum
= 10°C/W typically and 16°C/W maximum
θL
θJ
The maximum lead temperature may be found as follows:
= T
T
T
L
J(max)
JL
· P
T
R
where
JL
θJL
D
Mounting Method 3
Mounting Method 1
P.C. Board with
2–1/2″ x 2–1/2″
copper surface.
P.C. Board where available
copper surface is small.
NOTE 2 — MOUNTING DATA
Data shown for thermal resistance junction–to–ambient (R
)
θJA
L
L
for the mountings shown is to be used as typical guideline values
for preliminary engineering, or in case the tie point temperature
cannot be measured.
L = 1/2
″
TYPICAL VALUES FOR R
θJA
IN STILL AIR
Mounting Method 2
Lead Length, L (in)
Mounting
Method
BOARD GROUND
PLANE
L
L
1/8
1/4
1/2
3/4
R
θJA
1
2
3
50
58
51
59
53
61
55
63
°C/W
°C/W
°C/W
VECTOR PUSH–IN
TERMINALS T–28
28
4
Rectifier Device Data
50
100
70
30
20
50
T
= 75°C
L
f = 60 Hz
T
= 100°C
J
30
20
10
1 CYCLE
7.0
5.0
SURGE APPLIED AT RATED LOAD CONDITIONS
10
25°C
3.0
2.0
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
NUMBER OF CYCLES
Figure 8. Maximum Non–Repetitive Surge
Current
1.0
100
50
0.7
0.5
T
= 125°C
J
20
10
100
°C
0.3
0.2
5.0
2.0
1.0
0.5
75
°C
0.1
0.2
0.1
0.07
0.05
25°C
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
0.05
1N5820
1N5821
1N5822
v , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
F
0.02
0.01
Figure 7. Typical Forward Voltage
0
4.0
8.0
12
16
20
24
28
32
36
40
V
, REVERSE VOLTAGE (VOLTS)
R
500
Figure 9. Typical Reverse Current
1N5820
300
200
NOTE 4 — HIGH FREQUENCY OPERATION
1N5821
Since current flow in a Schottky rectifier is the result of majority
carrier conduction, it is not subject to junction diode forward and
reverse recovery transients due to minority carrier injection and
stored charge. Satisfactory circuit analysis work may be performed
by using a model consisting of an ideal diode in parallel with a
variable capacitance. (See Figure 11.)
T
= 25°C
J
f = 1.0 MHz
100
70
1N5822
20 30
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 10. Typical Capacitance
Rectifier Device Data
5
PACKAGE DIMENSIONS
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
D
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1
INCHES
MILLIMETERS
K
DIM
A
B
D
K
MIN
MAX
0.380
0.210
0.052
–––
MIN
9.40
4.83
1.22
25.40
MAX
9.65
5.33
1.32
–––
0.370
0.190
0.048
1.000
A
STYLE 1:
PIN 1. CATHODE
2. ANODE
K
2
CASE 267–03
ISSUE C
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
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1N5820/D
◊
相关型号：
1N5822-B
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2
RECTRON
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