BUL44 [MOTOROLA]
POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS; 功率晶体管2.0安培700伏40和100瓦型号: | BUL44 |
厂家: | MOTOROLA |
描述: | POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS |
文件: | 总10页 (文件大小:319K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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by BUL44/D
SEMICONDUCTOR TECHNICAL DATA
NPN Bipolar Power Transistor
For Switching Power Supply Applications
*Motorola Preferred Device
The BUL44/BUL44F have an applications specific state–of–the–art die designed
for use in 220 V line operated Switchmode Power supplies and electronic light
ballasts. These high voltage/high speed transistors offer the following:
POWER TRANSISTOR
2.0 AMPERES
700 VOLTS
40 and 100 WATTS
•
Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain h
— Fast Switching
FE
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
Full Characterization at 125°C
Tight Parametric Distributions are Consistent Lot–to–Lot
Two Package Choices: Standard TO–220 or Isolated TO–220
•
•
•
•
BUL44F, Case 221D, is UL Recognized to 3500 V
: File #E69369
RMS
MAXIMUM RATINGS
Rating
Symbol
BUL44
BUL44F
Unit
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
V
400
700
9.0
Vdc
Vdc
Vdc
Adc
CEO
V
CES
EBO
V
BUL44
CASE 221A–06
TO–220AB
Collector Current — Continuous
— Peak(1)
I
C
2.0
5.0
I
CM
Base Current — Continuous
— Peak(1)
I
1.0
2.0
Adc
B
I
BM
RMS Isolated Voltage(2)
(for 1 sec, R.H. < 30%,
Test No. 1 Per Fig. 22a
Test No. 2 Per Fig. 22b
Test No. 3 Per Fig. 22c
V
ISOL
—
—
—
4500
3500
1500
Volts
T
C
= 25°C)
Total Device Dissipation
Derate above 25°C
(T = 25°C)
C
P
D
50
0.4
25
0.2
Watts
W/°C
Operating and Storage Temperature
T , T
– 65 to 150
°C
J
stg
THERMAL CHARACTERISTICS
Rating
Symbol
BUL44
BUL44F
Unit
BUL44F
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
Thermal Resistance — Junction to Case
R
θJC
R
θJA
2.5
62.5
5.0
62.5
°C/W
— Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
T
L
260
°C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)
V
400
—
—
—
—
Vdc
µAdc
µAdc
C
CEO(sus)
Collector Cutoff Current (V
Collector Cutoff Current (V
= Rated V
, I = 0)
I
CEO
100
CE
CEO
B
= Rated V
, V
= 0)
I
—
—
—
—
—
—
100
500
100
CE
CES EB
CES
(T = 125°C)
C
Collector Cutoff Current (V
CE
= 500 V, V
EB
= 0)
(T = 125°C)
C
Emitter Cutoff Current (V
EB
= 9.0 Vdc, I = 0)
I
—
—
100
µAdc
C
EBO
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
(continued)
(2) Proper strike and creepage distance must be provided.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Base–Emitter Saturation Voltage (I = 0.4 Adc, I = 40 mAdc)
V
—
—
0.85
0.92
1.1
1.25
Vdc
Vdc
C
B
BE(sat)
(I = 1.0 Adc, I = 0.2 Adc)
C
B
Collector–Emitter Saturation Voltage
V
CE(sat)
(I = 0.4 Adc, I = 40 mAdc)
—
—
—
—
0.20
0.20
0.25
0.25
0.5
0.5
0.6
0.6
C
B
(T = 125°C)
C
(I = 1.0 Adc, I = 0.2 Adc)
C
B
(T = 125°C)
C
DC Current Gain
(I = 0.2 Adc, V
C
h
FE
—
= 5.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
14
—
—
32
20
20
14
13
22
34
—
—
—
—
—
—
CE
CE
CE
(T = 125°C)
C
(I = 0.4 Adc, V
C
12
12
8.0
7.0
10
(T = 125°C)
C
(I = 1.0 Adc, V
C
(T = 125°C)
C
(I = 10 mAdc, V
C CE
= 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (I = 0.5 Adc, V
= 10 Vdc, f = 1.0 MHz)
f
—
—
—
13
38
—
60
MHz
pF
C
CE
T
Output Capacitance (V
CB
= 10 Vdc, I = 0, f = 1.0 MHz)
C
E
OB
Input Capacitance (V
EB
= 8.0 V)
C
380
600
pF
IB
—
—
2.5
2.7
—
—
1.0 µs
3.0 µs
1.0 µs
3.0 µs
(I = 0.4 Adc
(T = 125°C)
C
C
I
V
= 40 mAdc
B1
Dynamic Saturation Voltage:
Determined 1.0 µs and
—
—
1.3
1.15
—
—
= 300 V)
CC
(T = 125°C)
C
3.0 µs respectively after
V
Vdc
CE(dsat)
—
—
3.2
7.5
—
—
rising I reaches 90% of
B1
(I = 1.0 Adc
(T = 125°C)
C
C
final I
B1
I
= 0.2 Adc
= 300 V)
B1
—
—
1.25
1.6
—
—
V
CC
(T = 125°C)
C
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)
Turn–On Time
(I = 0.4 Adc, I = 40 mAdc
t
on
t
off
t
on
t
off
—
—
40
40
100
—
ns
µs
ns
µs
C
B1
= 0.2 Adc, V
I
= 300 V)
(T = 125°C)
C
B2
CC
Turn–Off Time
(I = 0.4 Adc, I = 40 mAdc
—
—
1.5
2.0
2.5
—
C
B2
B1
= 0.2 Adc, V
I
= 300 V)
(T = 125°C)
C
CC
Turn–On Time
Turn–Off Time
(I = 1.0 Adc, I = 0.2 Adc
—
—
85
85
150
—
C
B1
B1
= 0.5 Adc, V
I
= 300 V)
(T = 125°C)
C
CC
(I = 1.0 Adc, I = 0.2 Adc
—
—
1.75
2.10
2.5
—
C
B2
B1
= 0.5 Adc, V
I
= 300 V)
(T = 125°C)
C
CC
SWITCHING CHARACTERISTICS: Inductive Load (V
clamp
= 300 V, V = 15 V, L = 200 µH)
CC
Fall Time
(I = 0.4 Adc, I = 40 mAdc
t
fi
—
—
125
120
200
—
ns
µs
ns
ns
µs
ns
ns
µs
ns
C
B1
I
= 0.2 Adc)
(T = 125°C)
C
B2
Storage Time
Crossover Time
Fall Time
t
si
—
—
0.7
0.8
1.25
—
(T = 125°C)
C
t
—
—
110
110
200
—
c
fi
(T = 125°C)
C
(I = 1.0 Adc, I = 0.2 Adc
t
—
—
110
120
175
—
C
B2
B1
I
= 0.5 Adc)
(T = 125°C)
C
Storage Time
Crossover Time
Fall Time
t
si
—
—
1.7
2.25
2.75
—
(T = 125°C)
C
t
c
—
—
180
210
300
—
(T = 125°C)
C
(I = 0.8 Adc, I = 160 mAdc
t
fi
70
—
—
180
170
—
C
B2
B1
= 160 mAdc)
I
(T = 125°C)
C
Storage Time
Crossover Time
t
si
2.6
—
—
4.2
3.8
—
(T = 125°C)
C
t
c
—
—
190
350
300
—
(T = 125°C)
C
2
Motorola Bipolar Power Transistor Device Data
r
TYPICAL STATIC CHARACTERISTICS
100
100
V
= 1 V
V
= 5 V
CE
CE
T
T
= 125°C
T
= 125°C
J
J
= 25°C
J
T
= 25°C
J
T
= –20°C
J
10
10
1.0
0.01
1.0
0.01
0.1
1.0
10
0.1
I , COLLECTOR CURRENT (AMPS)
C
1.0
10
I
, COLLECTOR CURRENT (AMPS)
C
Figure 1. DC Current Gain at 1 Volt
Figure 2. DC Current Gain at 5 Volts
2.0
10
T
= 25°C
J
I
/I = 10
C B
1.0
I
/I = 5
C B
1.0
0.1
2 A
1.5 A
1 A
T
T
= 25°C
= 125°C
0.4 A
J
J
I
= 0.2 A
10
C
0
1.0
0.01
0.01
100
, BASE CURRENT (mA)
1000
0.1
1.0
10
I
B
I
, COLLECTOR CURRENT (AMPS)
C
Figure 3. Collector Saturation Region
Figure 4. Collector–Emitter Saturation Voltage
1000
100
10
1.2
1.1
T
= 25°C
C
J
IB
f = 1 MHz
1.0
0.9
0.8
0.7
0.6
0.5
0.4
C
OB
T
= 25°C
J
T
= 125°C
J
I
/I = 5
C B
I
/I = 10
C B
1.0
1.0
10
10
100
0.01
0.1
1.0
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
I
, COLLECTOR CURRENT (AMPS)
CE
C
Figure 5. Base–Emitter Saturation Region
Figure 6. Capacitance
3
Motorola Bipolar Power Transistor Device Data
TYPICAL SWITCHING CHARACTERISTICS
(I
= I /2 for all switching)
B2
C
300
250
200
150
100
6.0
I
= I
= 300 V
I
= I
= 300 V
B(off) C/2
B(off) C/2
5.0
I
V
V
/I = 5
C B
CC
PW = 20
CC
PW = 20
µs
µs
4.0
3.0
2.0
I
/I = 10
C B
T
T
= 25°C
= 125°C
J
J
I
/I = 5
C B
50
0
1.0
0
T
T
= 25°C
= 125°C
J
J
I
/I = 10
0.6
C B
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.2
0.4
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
, COLLECTOR CURRENT (AMPS)
I
, COLLECTOR CURRENT (AMPS)
C
C
Figure 7. Resistive Switching, t
Figure 8. Resistive Switching, t
off
on
2500
2.0
1.5
T
T
= 25°C
I
V
V
L
= I
= 15 V
= 300 V
= 200
I
V
V
L
= I
J
J
I
/I = 5
B(off) C/2
CC
B(off) C/2
C B
= 125°C
= 15 V
CC
= 300 V
= 200
2000
1500
1000
Z
C
Z
µH
µH
C
I
= 1 A
C
1.0
500
0
T
T
= 25
= 125
°
C
J
J
I
= 0.4 A
C
°C
I
/I = 10
C B
0.5
5.0
0.4
0.8
1.2
1.6
2.0
2.4
6.0
7.0
8.0
9.0
10
11
12
13
14
15
I
, COLLECTOR CURRENT (AMPS)
h
, FORCED GAIN
C
FE
Figure 9. Inductive Storage Time, t
Figure 10. Inductive Storage Time
si
250
200
150
100
200
150
100
50
I
V
V
= I
= 15 V
= 300 V
= 200 µH
B(off) C/2
CC
Z
C
t
c
L
t
c
t
fi
t
fi
I
V
V
= I
B(off) C/2
= 15 V
CC
Z
C
50
0
= 300 V
= 200 µH
T
T
= 25
= 125
°
C
T
T
= 25°C
J
J
J
J
L
°C
= 125°C
0.4
0.8
1.2
1.6
2.0
2.4
0.4
0.8
1.2
1.6
2.0
2.4
I
, COLLECTOR CURRENT (AMPS)
I
, COLLECTOR CURRENT (AMPS)
C
C
Figure 11. Inductive Switching,
t and t I /I = 5
Figure 12. Inductive Switching,
t and t I /I = 10
c
fi C B
c
fi C B
4
Motorola Bipolar Power Transistor Device Data
TYPICAL SWITCHING CHARACTERISTICS
(I
= I /2 for all switching)
B2
C
190
170
160
150
I
V
V
= I
= 15 V
= 300 V
= 200
I
V
V
L
= I
B(off) C/2
CC
B(off) C/2
I
= 1 A
C
= 15 V
CC
= 300 V
= 200
170
150
130
110
Z
C
Z
L
µH
µH
C
140
130
120
I
= 0.4 A
C
I
= 0.4 A
C
110
100
90
70
I
= 1 A
11
C
T
T
= 25°C
J
J
T
T
= 25°C
J
J
90
80
= 125°C
= 125°C
50
5.0 6.0
7.0
8.0
9.0
10
12
13
14
15
5.0
6.0
7.0
8.0
9.0
h , FORCED GAIN
FE
10
11
12
13
14
15
h
, FORCED GAIN
FE
Figure 13. Inductive Fall Time
Figure 14. Inductive Crossover Time
GUARANTEED SAFE OPERATING AREA INFORMATION
2.5
10
1.0
10 µs
1 µs
T
≤ 125°C
≥ 4
1 ms
C
DC (BUL44)
5 ms
2.0
1.5
1.0
0.5
0
GAIN
50 µs
L
= 500 µH
C
Extended
SOA
DC (BUL44F)
–5 V
0.1
–1.5 V
0 V
0.01
10
100
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1000
0
100
200
300
400
500
600
700
V
V , COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
CE
Figure 15. Forward Bias Safe Operating Area
Figure 16. Reverse Bias Switching Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
1.0
down. Safe operating area curves indicate I –V
limits of
C
CE
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation
SECOND BREAK–
DOWN DERATING
0.8
0.6
0.4
than the curves indicate. The data of figure 15 is based on T
C
= 25°C; T
is variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10% but
J(PK)
must be derated when T > 25°C. Second breakdown limita-
C
tions do not derate the same as thermal limitations. Allowable
current at the voltages shown on figure 15 may be found at
any case temperature by using the appropriate curve on
THERMAL DERATING
figure 17. T
may be calculated from the data in figure 20
J(PK)
0.2
0
and 21. At any case temperatures, thermal limitations will
reduce the power than can be handled to values less than the
limitations imposed by second breakdown. For inductive
loads, high voltage and current must be sustained simulta-
neously during turn–off with the base–to–emitter junction re-
verse–biased. The safe level is specified as a reverse–
biased safe operating area (Figure 16). This rating is verified
under clamped conditions so that the device is never
subjected to an avalanche mode.
20
40
60
80
100
120
C)
140
160
T
, CASE TEMPERATURE (
°
C
Figure 17. Forward Bias Power Derating
5
Motorola Bipolar Power Transistor Device Data
10
5
4
V
CE
90% I
I
C
9
8
7
6
5
C
t
fi
3
dyn 1 µs
t
si
2
dyn 3 µs
1
t
10% I
C
c
V
I
10% V
0
CLAMP
CLAMP
–1
–2
–3
–4
–5
4
90% I
B
90% I
B
1
B
3
2
1
0
1 µs
3 µs
I
B
0
1
2
3
4
5
6
7
8
TIME
TIME
Figure 18. Dynamic Saturation Voltage Measurements
Figure 19. Inductive Switching Measurements
+15 V
I
PEAK
C
100 µF
1
µ
F
MTP8P10
MUR105
MJE210
100
3 W
Ω
150
3 W
Ω
V
PEAK
CE
V
CE
MTP8P10
MPF930
R
R
B1
I
1
B
I
MPF930
+10 V
out
I
B
A
I
2
B
50
Ω
B2
V(BR)CEO(sus)
L = 10 mH
INDUCTIVE SWITCHING
RBSOA
L = 500
RB2 = 0
COMMON
MTP12N10
150
3 W
Ω
L = 200
µH
µH
RB2 =
∞
RB2 = 0
500 µF
V
= 20 VOLTS
V
= 15 VOLTS
V
= 15 VOLTS
CC
(pk) = 100 mA
CC
RB1 SELECTED FOR
DESIRED I
CC
RB1 SELECTED
FOR DESIRED I
I
C
1 µF
1
1
B
B
–V
off
Table 1. Inductive Load Switching Drive Circuit
6
Motorola Bipolar Power Transistor Device Data
TYPICAL THERMAL RESPONSE
1.0
0.5
0.2
0.01
0.01
0.1
0.05
R
= r(t) R
θJC
θ
JC(t)
P
(pk)
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
0.02
t
1
1
JC1
SINGLE PULSE
T
– T = P
C
R
(t)
t
J(pk)
(pk)
θ
2
DUTY CYCLE, D = t /t
1 2
0.01
0.01
0.1
1.0
10
100
1000
t, TIME (ms)
Figure 20. Typical Thermal Response (Z
θJC
(t)) for BUL44
1.0
0.5
0.2
0.1
0.1
0.05
R
= r R
JC(t) (t) θJC
θ
P
(pk)
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
t
1
1
t
2
T
– T = P
(pk)
R
J(pk)
C
θ
JC1(t)
DUTY CYCLE, D = t /t
1 2
SINGLE PULSE
0.01
0.01
0.1
1.0
10
100
1000
t, TIME (ms)
Figure 21. Typical Thermal Response (Z
(t)) for BUL44F
θJC
7
Motorola Bipolar Power Transistor Device Data
TEST CONDITIONS FOR ISOLATION TESTS*
MOUNTED
FULLY ISOLATED
PACKAGE
MOUNTED
FULLY ISOLATED
MOUNTED
FULLY ISOLATED
PACKAGE
CLIP
CLIP
0.107
″
MIN
0.107″ MIN
PACKAGE
LEADS
LEADS
LEADS
HEATSINK
0.110 MIN
HEATSINK
HEATSINK
″
Figure 22a. Screw or Clip Mounting Position Figure 22b. Clip Mounting Position
for Isolation Test Number 1 for Isolation Test Number 2
Figure 22c. Screw Mounting Position
for Isolation Test Number 3
* Measurement made between leads and heatsink with all leads shorted together.
MOUNTING INFORMATION**
4–40 SCREW
CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
HEATSINK
NUT
Figure 23a. Screw–Mounted
Figure 23b. Clip–Mounted
Figure 23. Typical Mounting Techniques
for Isolated Package
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw
.
torque of 6 to 8 in lbs is sufficientto provide maximum power dissipation capability. The compression washer helps to maintain a constant
pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in lbs will
.
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
.
Additionaltests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in lbs without adversely affectingthepackage.
.
However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in lbs
of mounting torque under any mounting conditions.
**For more information about mounting power semiconductors see Application Note AN1040.
8
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
–––
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
A
K
Q
Z
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
1
2
3
U
H
STYLE 1:
PIN 1. BASE
2. COLLECTOR
L
R
J
3. EMITTER
4. COLLECTOR
V
G
T
U
V
D
N
Z
0.080
2.04
BUL44
CASE 221A–06
TO–220AB
ISSUE Y
SEATING
–T–
PLANE
–B–
C
NOTES:
F
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
S
Q
H
U
INCHES
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MIN
MAX
0.629
0.402
0.189
0.034
0.129
MIN
15.78
10.01
4.60
MAX
15.97
10.21
4.80
A
K
0.621
0.394
0.181
0.026
0.121
1
2 3
0.67
0.86
STYLE 2:
3.08
3.27
PIN 1. BASE
2. COLLECTOR
3. EMITTER
–Y–
0.100 BSC
2.54 BSC
0.123
0.018
0.500
0.045
0.129
0.025
0.562
0.060
3.13
0.46
3.27
0.64
12.70
1.14
14.27
1.52
G
N
J
0.200 BSC
5.08 BSC
R
0.126
0.107
0.096
0.259
0.134
0.111
0.104
0.267
3.21
2.72
2.44
6.58
3.40
2.81
2.64
6.78
L
D 3 PL
U
M
M
0.25 (0.010)
B
Y
BUL44F
CASE 221D–02
(ISOLATED TO–220 TYPE)
ISSUE D
9
Motorola Bipolar Power Transistor Device Data
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BUL44/D
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