MAC320A8-AF [MOTOROLA]

TRIAC, 600V V(DRM), 20A I(T)RMS, TO-220AB,;
MAC320A8-AF
型号: MAC320A8-AF
厂家: MOTOROLA    MOTOROLA
描述:

TRIAC, 600V V(DRM), 20A I(T)RMS, TO-220AB,

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by MAC320/D  
SEMICONDUCTOR TECHNICAL DATA  
Silicon Bidirectional Thyristors  
. . . designed primarily for full-wave ac control applications, such as solid-state relays,  
motor controls, heating controls and power supplies; or wherever full-wave silicon  
gate controlled solid-state devices are needed. Triac type thyristors switch from a  
blocking to a conducting state for either polarity of applied anode voltage with positive  
or negative gate triggering.  
TRIACs  
20 AMPERES RMS  
200 thru 800 VOLTS  
Blocking Voltage to 800 Volts  
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity  
and Stability  
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat  
Dissipation and Durability  
Gate Triggering Guaranteed in Three Modes (MAC320 Series) or Four Modes  
(MAC320A Series)  
MT1  
MT2  
G
CASE 221A-04  
(TO-220AB)  
STYLE 4  
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
C
Rating  
Symbol  
Value  
Unit  
(1)  
Peak Repetitive Off-State Voltage (T = –40 to +125°C,  
V
DRM  
Volts  
J
1/2 Sine Wave 50 to 60 Hz, Gate Open)  
200  
400  
600  
800  
MAC320-4, MAC320A4  
MAC320-6, MAC320A6  
MAC320-8, MAC320A8  
MAC320-10, MAC320A10  
Peak Gate Voltage  
V
10  
20  
Volts  
Amp  
GM  
I
T(RMS)  
On-State Current RMS (T = +75°C)  
(Full Cycle, Sine Wave, 50 to 60 Hz)  
C
Peak Surge Current (One Full Cycle, 60 Hz, T = +75°C)  
preceded and followed by rated current  
I
150  
Amp  
C
TSM  
Peak Gate Power (T = +75°C, Pulse Width = 2 µs)  
P
20  
0.5  
2
Watts  
Watt  
Amp  
°C  
C
GM  
Average Gate Power (T = +75°C, t = 8.3 ms)  
P
G(AV)  
C
Peak Gate Current  
I
GM  
Operating Junction Temperature Range  
Storage Temperature Range  
THERMAL CHARACTERISTICS  
Characteristic  
T
–40 to +125  
–40 to +150  
J
T
°C  
stg  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
1.8  
°C/W  
θJC  
1. V  
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the  
DRM  
voltage ratings of the devices are exceeded.  
Motorola, Inc. 1995  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Peak Blocking Current  
I
DRM  
(V Rated V , Gate Open)  
DRM  
T
J
T
J
= 25°C  
= +125°C  
10  
2
µA  
mA  
D
Peak On-State Voltage (Either Direction)  
(I = 28 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle  
V
1.4  
1.7  
Volts  
mA  
TM  
2%)  
TM  
Gate Trigger Current (Continuous dc)  
I
GT  
(Main Terminal Voltage = 12 Vdc, R = 100 Ohms)  
L
MT2 (+), G(+); MT2 (+), G(–); MT2 (–), G(–)  
MT2 (–), G(+) “A” SUFFIX ONLY  
50  
75  
Gate Trigger Voltage (Continuous dc)  
(Main Terminal Voltage = 12 Vdc, R = 100 Ohms)  
V
GT  
Volts  
0.9  
1.4  
2
2.5  
L
MT2 (+), G(+); MT2 (+), G(–); MT2 (–), G(–)  
MT2 (–), G(+) “A” SUFFIX ONLY  
(Main Terminal Voltage = Rated V  
, R = 10 k, T =+110°C)  
DRM  
L J  
MT2 (+), G(+); MT2 (–), G(–); MT2 (+), G(–);  
MT2 (–), G(+) “A” SUFFIX ONLY  
0.2  
0.2  
Holding Current (Either Direction)  
(Main Terminal Voltage = 12 Vdc, Gate Open,  
Initiating Current = 200 mA)  
I
6
1.5  
5
40  
mA  
µs  
H
Turn-On Time  
t
gt  
(V = Rated V  
, I  
= 28 A,  
D
DRM TM  
I
= 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs)  
GT  
Critical Rate of Rise of Commutation Voltage  
(V = Rated V , I = 28 A, Commutating  
dv/dt(C)  
V/µs  
D
DRM TM  
di/dt = 10 A/ms, Gate Unenergized, T = +75°C)  
C
FIGURE 1 — RMS CURRENT DERATING  
FIGURE 2 — ON-STATE POWER DISSIPATION  
130  
40  
35  
30  
25  
20  
15  
10  
5.0  
0
α
120  
110  
100  
90  
α
= 30°  
dc  
α
60  
°
180°  
90°  
90  
°
α
= Conduction  
Angle  
80  
α
180  
°
60°  
70  
dc  
18  
α
α
= 30°  
60  
α
= Conduction  
Angle  
50  
0
2.0  
4.0  
I
6.0  
8.0  
10  
12  
14  
16  
20  
0
2.0  
4.0  
I
6.0  
8.0  
10  
12  
14  
16  
18  
20  
, RMS ON-STATE CURRENT (AMP)  
, RMS ON-STATE CURRENT (AMP)  
T(RMS)  
T(RMS)  
2
Motorola Thyristor Device Data  
FIGURE 5 — MAXIMUM ON-STATE CHARACTERISTICS  
FIGURE 3 — TYPICAL GATE TRIGGER VOLTAGE  
3
2
100  
70  
OFF-STATE VOLTAGE = 12 Vdc  
ALL MODES  
50  
T
= 25°C  
J
125°C  
30  
20  
1
0.7  
0.5  
10  
7
5
0.3  
–60  
–40  
–20  
0
20  
40  
60  
80  
100  
120 140  
T , JUNCTION TEMPERATURE (  
°C)  
J
3
2
FIGURE 4 — TYPICAL GATE TRIGGER CURRENT  
3
2
OFF-STATE VOLTAGE = 12 Vdc  
ALL MODES  
1
0.7  
0.5  
1
0.7  
0.5  
0.3  
0.2  
0.1  
0.3  
0.4  
0.8  
v
1.2  
1.6  
2
2.4  
2.8  
3.2  
3.6  
4
4.4  
–60 –40  
–20  
0
20  
40  
60  
80  
C)  
100  
120 140  
T , JUNCTION TEMPERATURE(  
°
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)  
J
TM  
3
Motorola Thyristor Device Data  
FIGURE 6 — TYPICAL HOLDING CURRENT  
FIGURE 7 — MAXIMUM ON-REPETITIVE SURGE CURRENT  
3
2
300  
GATE OPEN  
APPLIES TO EITHER DIRECTION  
200  
1
100  
70  
0.7  
0.5  
50  
T
= 80°C  
C
f = 60 Hz  
Surge is preceded and followed by rated current  
30  
0.3  
1
2
3
5
7
10  
60  
40  
–20  
0
20  
40  
60  
80  
100  
120 140  
NUMBER OF CYCLES  
T , JUNCTION TEMPERATURE (  
°
C)  
J
FIGURE 8 — THERMAL RESPONSE  
1
0.5  
0.2  
0.1  
Z
= r(t) R  
θJC  
θ
JC(t)  
0.05  
0.02  
0.01  
0.1  
0.2  
0.5  
1
2
5
10  
20  
50  
100  
200  
500  
1 k  
2 k  
5 k  
10 k  
t, TIME (ms)  
4
Motorola Thyristor Device Data  
PACKAGE DIMENSIONS  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
SEATING  
PLANE  
–T–  
2. CONTROLLING DIMENSION: INCH.  
3. DIMENSION Z DEFINES A ZONE WHERE ALL  
BODY AND LEAD IRREGULARITIES ARE  
ALLOWED.  
B
F
C
T
S
INCHES  
MIN  
MILLIMETERS  
DIM  
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX  
0.620  
0.405  
0.190  
0.035  
0.147  
0.105  
0.155  
0.022  
0.562  
0.055  
0.210  
0.120  
0.110  
0.055  
0.255  
0.050  
–––  
MIN  
14.48  
9.66  
4.07  
0.64  
3.61  
2.42  
2.80  
0.36  
12.70  
1.15  
4.83  
2.54  
2.04  
1.15  
5.97  
0.00  
1.15  
–––  
MAX  
15.75  
10.28  
4.82  
0.88  
3.73  
2.66  
3.93  
0.55  
14.27  
1.39  
5.33  
3.04  
2.79  
1.39  
6.47  
1.27  
–––  
0.570  
0.380  
0.160  
0.025  
0.142  
0.095  
0.110  
0.014  
0.500  
0.045  
0.190  
0.100  
0.080  
0.045  
0.235  
0.000  
0.045  
–––  
4
3
STYLE 4:  
PIN 1. MAIN TERMINAL 1  
Q
A
K
2. MAIN TERMINAL 2  
3. GATE  
4. MAIN TERMINAL 2  
1
2
U
H
Z
R
L
V
J
T
U
V
G
D
Z
0.080  
2.04  
N
CASE 221A-04  
(TO–220AB)  
5
Motorola Thyristor Device Data  
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding  
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and  
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different  
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does  
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in  
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of  
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such  
unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless  
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.  
Motorola and  
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.  
Literature Distribution Centers:  
USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.  
EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England.  
JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.  
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.  
MAC320/D  

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