MCR72 [MOTOROLA]

Silicon Controlled Rectifiers; 可控硅整流器器
MCR72
型号: MCR72
厂家: MOTOROLA    MOTOROLA
描述:

Silicon Controlled Rectifiers
可控硅整流器器

可控硅整流器
文件: 总4页 (文件大小:89K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Order this document  
by MCR72/D  
SEMICONDUCTOR TECHNICAL DATA  
Reverse Blocking Triode Thyristors  
. . . designed for industrial and consumer applications such as temperature, light and  
speed control; process and remote controls; warning systems; capacitive discharge  
circuits and MPU interface.  
Center Gate Geometry for Uniform Current Density  
All Diffused and Glass-Passivated Junctions for Parameter Uniformity and  
Stability  
Small, Rugged Thermowatt Construction for Low Thermal Resistance, High Heat  
Dissipation and Durability  
SCRs  
8 AMPERES RMS  
50 thru 800 VOLTS  
Low Trigger Currents, 200 µA Maximum for Direct Driving from Integrated Circuits  
G
C
A
CASE 221A-04  
(TO-220AB)  
STYLE 3  
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Peak Repetitive Forward and Reverse Blocking Voltage  
(T = – 40 to 110°C,  
V
Volts  
DRM  
or  
J
1/2 Sine Wave, R  
= 1k)  
V
RRM  
GK  
MCR72-2  
MCR72-3  
MCR72-4  
MCR72-6  
MCR72-8  
MCR72-10  
50  
100  
200  
400  
600  
800  
On-State RMS Current (T = 83°C)  
I
8
Amps  
Amps  
C
T(RMS)  
Peak Non-repetitive Surge Current  
I
100  
TSM  
(1/2 Cycle, 60 Hz, T = –40 to 110°C)  
J
2
I t  
2
A s  
Circuit Fusing (t = 8.3 ms)  
40  
Peak Gate Voltage (t  
Peak Gate Current (t  
Peak Gate Power (t  
Average Gate Power  
10 µs)  
10 µs)  
10 µs)  
V
± 5  
Volts  
Amp  
Watts  
Watts  
°C  
GM  
I
1
5
GM  
P
GM  
P
0.75  
G(AV)  
Operating Junction Temperature Range  
T
–40 to +110  
J
1. V and V  
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage;  
RRM  
(cont.)  
DRM  
however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages  
shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.  
Motorola, Inc. 1995  
MAXIMUM RATINGS — continued  
Rating  
Symbol  
Value  
–40 to + 150  
8
Unit  
°C  
Storage Temperature Range  
Mounting Torque  
T
stg  
in. lb.  
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
Symbol  
Max  
2.2  
60  
Unit  
°C/W  
°C/W  
R
θJC  
θJA  
R
ELECTRICAL CHARACTERISTICS (T = 25°C, R  
= 1 kunless otherwise noted.)  
C
GK  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
(1)  
Peak Forward or Reverse Blocking Current  
I
, I  
DRM RRM  
(V  
AK  
= Rated V  
or V  
) T = 25°C  
10  
500  
µA  
µA  
DRM  
RRM  
J
J
T
= 110°C  
On-State Voltage  
(I = 16 A Peak, Pulse Width  
V
1.7  
2
Volts  
TM  
1 ms, Duty Cycle  
(2)  
2%)  
TM  
Gate Trigger Current (Continuous dc)  
(V = 12 V, R = 100 )  
I
30  
200  
µA  
GT  
D
L
Gate Trigger Voltage (Continuous dc)  
(V = 12 V, R = 100 )  
V
GT  
Volts  
0.1  
0.5  
1.5  
D
L
(V = Rated V  
, R = 10 k, T = 110°C)  
D
DRM  
L
J
Holding Current  
I
10  
1
6
mA  
V/µs  
µs  
H
(V = 12 V, I  
= 100 mA)  
D
TM  
Critical Rate-of-Rise of Forward Blocking Voltage  
(V = Rated V , T = 110°C, Exponential Waveform)  
dv/dt  
D
DRM  
Gate Controlled Turn-On Time  
(V = Rated V , I = 16 A, I = 2 mA)  
J
t
gt  
D
DRM TM  
G
1. Ratings apply for negative gate voltage or R  
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage  
applied exceeds the rated blocking voltage.  
= 1 k. Devices shall not have a positive gate voltage concurrently with a negative voltage  
GK  
2. Does not include R  
current.  
GK  
FIGURE 1 – AVERAGE CURRENT DERATING  
FIGURE 2 – ON-STATE POWER DISSIPATION  
110  
100  
90  
16  
12  
dc  
α
α
= Conduction Angle  
60  
180°  
α
= Conduction Angle  
α
α
= 30°  
90°  
8.0  
60°  
°
α
= 30°  
90°  
180°  
80  
70  
4.0  
0
dc  
0
2.0  
4.0  
6.0  
8.0  
0
2.0  
4.0  
6.0  
8.0  
I
, AVERAGE ON-STATE CURRENT (AMP)  
I , AVERAGE ON-STATE CURRENT (AMP)  
T(AV)  
T(AV)  
2
Motorola Thyristor Device Data  
FIGURE 3 – NORMALIZED GATE CURRENT  
FIGURE 4 – GATE VOLTAGE  
3.0  
2.0  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
V
= 12 Vdc  
D
V
= 12 Vdc  
D
1.0  
0.5  
0.3  
–60 –40  
–20  
0
20  
40  
60  
80  
100  
120  
–40 –20  
0
20  
40  
60  
80  
90  
100  
120 140  
T , JUNCTION TEMPERATURE (  
°C)  
T , JUNCTION TEMPERATURE (  
°C)  
J
J
3
Motorola Thyristor Device Data  
PACKAGE DIMENSIONS  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
SEATING  
PLANE  
–T–  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. DIMENSION Z DEFINES A ZONE WHERE ALL  
BODY AND LEAD IRREGULARITIES ARE  
ALLOWED.  
B
F
C
T
S
INCHES  
MIN  
MILLIMETERS  
DIM  
A
B
C
D
F
MAX  
0.620  
0.405  
0.190  
0.035  
0.147  
0.105  
0.155  
0.022  
0.562  
0.055  
0.210  
0.120  
0.110  
0.055  
0.255  
0.050  
–––  
MIN  
14.48  
9.66  
4.07  
0.64  
3.61  
2.42  
2.80  
0.36  
12.70  
1.15  
4.83  
2.54  
2.04  
1.15  
5.97  
0.00  
1.15  
–––  
MAX  
15.75  
10.28  
4.82  
0.88  
3.73  
2.66  
3.93  
0.55  
14.27  
1.39  
5.33  
3.04  
2.79  
1.39  
6.47  
1.27  
–––  
4
3
0.570  
0.380  
0.160  
0.025  
0.142  
0.095  
0.110  
0.014  
0.500  
0.045  
0.190  
0.100  
0.080  
0.045  
0.235  
0.000  
0.045  
–––  
Q
A
K
STYLE 3:  
PIN 1. CATHODE  
1
2
U
2. ANODE  
3. GATE  
4. ANODE  
H
G
H
J
K
L
N
Q
R
S
Z
R
L
V
J
T
U
V
G
D
Z
0.080  
2.04  
N
CASE 221A-04  
(TO–220AB)  
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding  
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and  
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different  
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does  
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in  
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of  
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such  
unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless  
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.  
Motorola and  
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.  
Literature Distribution Centers:  
USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.  
EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England.  
JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.  
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.  
MCR72/D  

相关型号:

MCR72-003

Sensitive Gate Silicon Controlled Rectifier - SCR, TO-220 3 LEAD STANDARD, 500-BLKBX
ONSEMI

MCR72-006

Sensitive Gate Silicon Controlled Rectifier - SCR, TO-220 3 LEAD STANDARD, 500-BLKBX
ONSEMI

MCR72-008

Sensitive Gate Silicon Controlled Rectifiers
ONSEMI

MCR72-1

SILICON CONTROLLED RECTIFIERS
DIGITRON

MCR72-1

Silicon Controlled Rectifier
NJSEMI

MCR72-10

Silicon Controlled Rectifiers
NJSEMI

MCR72-10-16

8A, 800V, SCR, TO-220AB, TO-220, 2 PIN
MOTOROLA

MCR72-10-A16A

8A, 800V, SCR, TO-220AB, TO-220, 3 PIN
MOTOROLA

MCR72-10-AF

Silicon Controlled Rectifier, 8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB
MOTOROLA

MCR72-10-AK

8A, 800V, SCR, TO-220AB
MOTOROLA

MCR72-10-AN

Silicon Controlled Rectifier, 8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB
MOTOROLA

MCR72-10-AS

Silicon Controlled Rectifier, 8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB
MOTOROLA