MGY20N120D [MOTOROLA]
Insulated Gate Bipolar Transistor with Anti-Parallel Diode; 绝缘栅双极晶体管与反并联二极管型号: | MGY20N120D |
厂家: | MOTOROLA |
描述: | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
文件: | 总6页 (文件大小:257K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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by MGY20N120D/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
IGBT & DIODE IN TO–264
20 A @ 90°C
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operation at high frequencies.
Co–packaged IGBT’s save space, reduce assembly time and cost.
28 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
•
•
•
•
•
•
Industry Standard High Power TO–264 Package (TO–3PBL)
C
E
High Speed E : 160 J per Amp typical at 125°C
off
High Short Circuit Capability – 10 s minimum
Soft Recovery Free Wheeling Diode is included in the package
Robust High Voltage Termination
G
Robust RBSOA
G
C
E
CASE 340G–02, Style 5
TO–264
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
1200
1200
±20
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
V
CES
Collector–Gate Voltage (R
GE
= 1.0 MΩ)
V
CGR
Gate–Emitter Voltage — Continuous
V
GE
Collector Current — Continuous @ T = 25°C
I
I
I
28
20
56
C
C
C25
C90
CM
— Continuous @ T = 90°C
— Repetitive Pulsed Current (1)
Apk
Total Power Dissipation @ T = 25°C
Derate above 25°C
P
D
174
1.39
Watts
W/°C
C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
T , T
stg
–55 to 150
10
°C
J
t
sc
s
(V
CC
= 720 Vdc, V = 15 Vdc, T = 125°C, R = 20 Ω)
GE J G
Thermal Resistance — Junction to Case – IGBT
— Junction to Case – Diode
R
R
R
0.7
1.1
35
°C/W
°C
θJC
θJC
θJA
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
T
260
L
10 lbf in (1.13 N m)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
BV
CES
Vdc
(V
= 0 Vdc, I = 25 µAdc)
1200
—
—
870
—
—
GE
C
Temperature Coefficient (Positive)
mV/°C
µAdc
Zero Gate Voltage Collector Current
I
CES
(V
CE
(V
CE
= 1200 Vdc, V
= 1200 Vdc, V
= 0 Vdc)
= 0 Vdc, T = 125°C)
—
—
—
—
100
2500
GE
GE
J
Gate–Body Leakage Current (V
= ± 20 Vdc, V
CE
= 0 Vdc)
I
—
—
250
nAdc
Vdc
GE
GES
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
V
CE(on)
(V
GE
(V
GE
(V
GE
= 15 Vdc, I = 10 Adc)
—
—
—
3.00
2.36
2.90
3.54
—
4.99
C
= 15 Vdc, I = 10 Adc, T = 125°C)
C
J
= 15 Vdc, I = 20 Adc)
C
Gate Threshold Voltage
(V = V , I = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
V
Vdc
GE(th)
4.0
—
6.0
10
8.0
—
CE GE
C
mV/°C
Forward Transconductance (V = 10 Vdc, I = 20 Adc)
g
fe
—
12
—
Mhos
CE
C
DYNAMIC CHARACTERISTICS
Input Capacitance
C
—
—
—
1876
208
31
—
—
—
pF
ns
ies
(V
(V
= 25 Vdc, V = 0 Vdc,
GE
CE
Output Capacitance
C
oes
f = 1.0 MHz)
Transfer Capacitance
C
res
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
t
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
88
103
190
284
1.65
2.42
4.07
83
—
—
d(on)
= 720 Vdc, I = 20 Adc,
CC
C
Rise Time
t
r
V
= 15 Vdc, L = 300 H
GE
G
R
= 20 Ω, T = 25°C)
J
Turn–Off Delay Time
Fall Time
t
—
d(off)
Energy losses include “tail”
t
f
—
Turn–Off Switching Loss
Turn–On Switching Loss
Total Switching Loss
Turn–On Delay Time
Rise Time
E
3.75
7.68
11.43
—
mJ
ns
off
E
on
E
ts
t
t
d(on)
(V
CC
V
= 720 Vdc, I = 20 Adc,
C
t
107
216
494
3.19
4.26
7.45
63
—
r
= 15 Vdc, L = 300 H
GE
G
R
= 20 Ω, T = 125°C)
J
Turn–Off Delay Time
Fall Time
—
d(off)
Energy losses include “tail”
t
f
—
Turn–Off Switching Loss
Turn–On Switching Loss
Total Switching Loss
Gate Charge
E
—
mJ
nC
off
E
—
on
E
—
ts
Q
Q
Q
—
T
1
2
(V
CC
= 720 Vdc, I = 20 Adc,
C
20
—
V
GE
= 15 Vdc)
27
—
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
V
FEC
Vdc
(I
EC
(I
EC
(I
EC
= 10 Adc)
= 10 Adc, T = 125°C)
= 20 Adc)
—
—
—
2.92
1.73
3.67
3.59
—
4.57
J
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(continued)
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted)
J
Characteristic
DIODE CHARACTERISTICS — continued
Symbol
Min
Typ
Max
Unit
Reverse Recovery Time
t
—
—
—
—
—
—
—
—
114
74
—
—
—
—
—
—
—
—
ns
rr
t
t
a
(I = 20 Adc, V = 720 Vdc,
F
R
dI /dt = 150 A/µs)
F
40
b
Reverse Recovery Stored Charge
Reverse Recovery Time
Q
0.68
224
149
75
µC
RR
t
rr
ns
t
a
(I = 20 Adc, V = 720 Vdc,
F
F
R
dI /dt = 150 A/µs, T = 125°C)
J
t
b
Reverse Recovery Stored Charge
Q
2.40
µC
RR
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
L
E
nH
—
13
—
TYPICAL ELECTRICAL CHARACTERISTICS
60
50
40
30
20
10
0
60
V
= 20 V
V = 20 V
GE
T
= 25°C
GE
T
= 125°C
15 V
J
J
15 V
50
40
30
20
10
0
17.5 V
17.5 V
12.5 V
12.5 V
10 V
10 V
0
2
4
6
8
0
2
4
6
8
V , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
CE
V , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
CE
Figure 1. Output Characteristics, T = 25°C
Figure 2. Output Characteristics, T = 125°C
J
J
60
40
4
3
V
= 15 V
V
= 10 V
GE
250
CE
µs PULSE WIDTH
250 µs PULSE WIDTH
T
= 125°C
J
I
= 20 A
C
15 A
10 A
20
0
2
1
25°C
5
6
7
8
9
10
11
12
13
14
15
–50
0
50
100
C)
150
V
, GATE–TO–EMITTER VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (°
J
GE
Figure 3. Transfer Characteristics
Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
Motorola TMOS Power MOSFET Transistor Device Data
3
10000
1000
10000
1000
100
V
= 0 V
T = 25°C
J
T
= 25°C
GE
J
C
C
ies
ies
C
C
oes
C
C
oes
100
res
res
10
10
0
5
10
15
20
25
50
100
150
200
GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
Figure 5b. High Voltage Capacitance
Variation
16
6
5
4
V
V
= 720 V
= 15 V
= 25°C
Q
T
CC
GE
14
12
I
= 25 A
C
T
J
10
8
15 A
10 A
Q
Q
2
1
3
2
1
0
6
4
T
= 25°C
= 20 A
J
I
C
2
0
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70
10
15
20
25
30
35
40
45
50
Q , TOTAL GATE CHARGE (nC)
g
R
, GATE RESISTANCE (OHMS)
G
Figure 6. Gate–to–Emitter and Collector–to–Emitter
Voltage versus Total Charge
Figure 7. Total Switching Losses versus
Gate Resistance
5
5
4
V
V
R
= 720 V
= 15 V
= 20 Ω
V
V
R
= 720 V
= 15 V
= 20 Ω
= 125°C
CC
GE
G
CC
GE
G
4
3
2
1
I
= 20 A
15 A
C
T
J
3
2
1
10 A
0
10
12
14
16
18
20
25
50
75
100
125
150
I
, COLLECTOR–TO–EMITTER CURRENT (AMPS)
T
, CASE TEMPERATURE (°C)
C
C
Figure 8. Total Switching Losses versus
Case Temperature
Figure 9. Total Switching Losses versus
Collector–to–Emitter Current
4
Motorola TMOS Power MOSFET Transistor Device Data
100
10
1
40
30
20
T
= 125°C
J
T
= 25°C
J
10
0
V
R
= 15 V
GE
= 20 Ω
GE
= 125°C
T
J
0.1
0
1
2
3
4
5
1
10
100
1000
V
, FORWARD VOLTAGE DROP (VOLTS)
V
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
FM
CE
Figure 10. Maximum Forward Drop versus
Instantaneous Forward Current
Figure 11. Reverse Biased
Safe Operating Area
1.0
D = 0.5
0.2
0.1
0.05
0.02
0.1
P
(pk)
R
(t) = r(t) R
JC θJC
θ
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.01
SINGLE PULSE
t
READ TIME AT t
T
1
1
t
– T = P R (t)
(pk) θJC
2
J(pk)
C
DUTY CYCLE, D = t /t
1 2
0.01
1.0E–05
1.0E–04
1.0E–03
1.0E–02
t, TIME (s)
1.0E–01
1.0E+00
1.0E+01
Figure 12. Thermal Response
Motorola TMOS Power MOSFET Transistor Device Data
5
PACKAGE DIMENSIONS
M
M
0.25 (0.010)
T B
–Q–
U
–T–
NOTES:
–B–
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
E
MILLIMETERS
INCHES
N
DIM
A
B
C
D
E
MIN
2.8
MAX
2.9
MIN
MAX
1.142
0.800
0.209
0.058
0.083
0.102
1.102
0.760
0.185
0.037
0.075
0.087
A
K
19.3
4.7
20.3
5.3
0.93
1.9
1.48
2.1
L
1
2
3
R
F
2.2
2.4
–Y–
G
H
J
K
L
N
P
Q
R
U
W
5.45 BSC
0.215 BSC
2.6
0.43
17.6
11.0
3.95
2.2
3.0
0.78
18.8
11.4
4.75
2.6
0.102
0.017
0.693
0.433
0.156
0.087
0.122
0.085
0.240
0.110
0.118
0.031
0.740
0.449
0.187
0.102
0.137
0.093
0.256
0.125
P
W
3.1
3.5
F 2 PL
2.15
6.1
2.35
6.5
G
J
H
2.8
3.2
D 3 PL
0.25 (0.010)
STYLE 5:
PIN 1. GATE
M
S
Y
Q
2. COLLECTOR
3. EMITTER
CASE 340G–02
TO–264
ISSUE E
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
Opportunity/Affirmative Action Employer.
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
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MGY20N120D/D
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