MJE1123 [MOTOROLA]
PNP LOW DROPOUT TRANSISTOR 4.0 AMPERES 40 VOLTS; PNP低压差型晶体管4.0安培40伏
| 型号： | MJE1123 |
| 厂家： | 
MOTOROLA |
| 描述： | PNP LOW DROPOUT TRANSISTOR 4.0 AMPERES 40 VOLTS |
| 文件： | 总6页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MJE1123/D
SEMICONDUCTOR TECHNICAL DATA
PNP LOW DROPOUT
TRANSISTOR
4.0 AMPERES
40 VOLTS
The MJE1123 is an applications specific device designed to provide low–dropout
linear regulation for switching–regulator post regulators, battery powered systems
and other applications. The MJE1123 is fully specified in the saturation region and
exhibits the following main features:
•
•
•
High Gain Limits Base–Drive Losses to only 1–2% of Circuit Output Current
Gain is 100 Minimum at I = 1.0 Amp, V = 7.0 Volts
Excellent Saturation Voltage Characteristic, 0.2 Volts Maximum at 1.0 Amp
C
CE
MAXIMUM RATINGS (T = 25°C Unless Otherwise Noted.)
C
Rating
Collector–Emitter Sustaining Voltage
Collector–Base Voltage
Symbol
Value
40
Unit
Vdc
Vdc
Vdc
Adc
V
CEO
V
CB
50
Emitter–Base Voltage
V
EB
5.0
Collector Current — Continuous
Collector Current — Peak
I
C
4.0
8.0
I
CM
Base Current — Continuous
I
B
4.0
Adc
Total Power Dissipation @ T = 25°C
Derate above 25°C
P
D
75
0.6
Watts
W/°C
C
Operating and Storage Temperature
T , T
– 65 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case°
Thermal Resistance — Junction to Ambient°
R
R
°1.67°
°70°
°C/W
°C
θJC
θJA
CASE 221A–06
TO–220AB
Maximum Lead Temperature for Soldering Purposes:
1/8″ from Case for 5 seconds
T
275
L
ELECTRICAL CHARACTERISTICS (T = 25°C Unless Otherwise Noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS*
Collector–Emitter Sustaining Voltage (I = 1.0 mA, I = 0)
V
40
65
11
—
—
Vdc
Vdc
C
CEO(sus)
Emitter–Base Voltage (I = 100 µA)
V
7.0
E
EBO
CEO
Collector Cutoff Current
I
µAdc
(V
CE
(V
CE
= 7.0 Vdc, I = 0)
—
—
—
—
100
250
B
= 20 Vdc, I = 0)
B
ON CHARACTERISTICS*
Collector–Emitter Saturation Voltage
V
Vdc
CE(sat)
(I = 1.0 Adc, I = 20 mAdc)
—
—
—
—
—
—
0.16
0.13
0.10
0.25
0.20
0.45
0.30
0.25
0.20
0.40
0.35
0.75
C
C
B
B
B
B
B
B
(I = 1.0 Adc, I = 50 mAdc)
(I = 1.0 Adc, I = 120 mAdc)
C
(I = 2.0 Adc, I = 50 mAdc)
C
(I = 2.0 Adc, I = 120 mAdc)
C
(I = 4.0 Adc, I = 120 mAdc)
C
* Indicates Pulse Test: Pulse Width = 300 µs max, Duty Cycle = 2%.
(continued)
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS — continued (T = 25°C Unless Otherwise Noted)
C
Characteristic
ON CHARACTERISTICS* (continued)
Base–Emitter Saturation Voltage
Symbol
Min
Typ
Max
Unit
V
Vdc
BE(sat)
(I = 1.0 Adc, I = 20 mAdc)
—
—
—
0.77
0.87
1.00
0.95
1.20
1.40
C
C
B
B
B
(I = 2.0 Adc, I = 50 mAdc)
(I = 4.0 Adc, I = 120 mAdc)
C
DC Current Gain
h
FE
—
(I = 1.0 Adc, V
= 7.0 Vdc)
= 10 Vdc)
= 7.0 Vdc)
= 10 Vdc)
= 7.0 Vdc)
= 10 Vdc)
100
100
75
80
45
170
180
120
140
75
225
225
170
180
100
100
C
CE
CE
CE
CE
CE
CE
(I = 1.0 Adc, V
C
(I = 2.0 Adc, V
C
(I = 2.0 Adc, V
C
(I = 4.0 Adc, V
C
(I = 4.0 Adc, V
45
79
C
Base–Emitter On Voltage
V
Vdc
BE(on)
(I = 1.0 Adc, V
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
—
—
—
0.75
0.84
0.90
0.90
1.00
1.20
C
CE
CE
CE
(I = 2.0 Adc, V
C
(I = 4.0 Adc, V
C
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
f
T
5.0
11.5
—
MHz
(I = 1.0 Adc, V
= 4.0 Vdc, f = 1.0 MHz)
C
CE
* Indicates Pulse Test: Pulse Width = 300 µs max, Duty Cycle = 2%.
100
1
I
= 20 mA
50 mA
B
T
= 25°C
J
0.8
0.6
0.4
10
1
I
= 4 A, I = 100 mA
B
C
100 mA
120 mA
I
I
= 2 A, I = 50 mA
B
C
0.2
0
= 1 A, I = 20 mA
B
C
0.1
0.1
1
10
20
40
60
80
100
I
, COLLECTOR CURRENT (AMPS)
T , CASE TEMPERATURE (°C)
J
C
Figure 1. Saturation Voltage versus Collector
Current as a Function of Base Drive
Figure 2. Saturation Voltage
versus Temperature
1.2
1.1
1.1
1
I
= 20 mA
B
I
= 4 A, I = 100 mA
B
C
1
0.9
0.8
50 mA
120 mA
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I
= 2 A, I = 50 mA
B
C
T
= 25°C
J
0.7
0.6
I
= 1 A, I = 20 mA
B
C
0.1
1
10
20
40
60
80
100
I
, COLLECTOR CURRENT (AMPS)
T , CASE TEMPERATURE (°C)
C
J
Figure 3. Base–Emitter Saturation Voltage
Figure 4. Base–Emitter Saturation Voltage
versus Temperature
2
Motorola Bipolar Power Transistor Device Data
1000
100
10
40
30
20
T
= 25°C
V
= 2, 7, or 10 V
J
CE
V
= 2 V
CE
T
= 100°C
J
7 V
10
0
10 V
50°C
0.1
1
10
100
0.1
1
10
I , COLLECTOR CURRENT (AMPS)
C
100
I
, COLLECTOR CURRENT (AMPS)
C
Figure 5. DC Current Gain
Figure 6. DC Current Gain Variation
TYPICAL LOW PASS TRANSISTOR APPLICATION
The MJE1123 was designed to operate as a low pass tran-
sistor in conjunction with the LT1123 offered by Linear
Technology Corporation. Together they provide several ex-
cellent advantages:
— A dropout voltage below 50 mV at 1.0 amp, increasing to
only 225 mV at 4.0 amps, typically.
— Line and load regulation are within 5.0 mV.
— Initial output accuracy is better than 1 percent.
— Full short circuit protection is included.
— Base drive loss is less than 2% of output current . . . even
at 4.0 full amps output.
— The high gain and excellent collector–emitter saturation
voltage make the combination better than monolithic de-
vices.
600
Ω
5.6 V
10 µF*
MJE1123
5 V
20
Ω
DRIVE
*REQUIRED IF DEVICE IS
*MORE THAN 6″ FROM MAIN
*FILTER CAPACITOR.
OUTPUT
FB
LT1123
GND
10 µF#
#REQUIRED FOR STABILITY
#(LARGER VALUES INCREASE
#STABILITY).
0.4
0.3
100
10
T
= 150°C
J
1 ms
5 ms
DC
0.2
1
0.1
0
0.1
0
1
2
3
4
5
1
10
, COLLECTOR EMITTER VOLTAGE (VOLTS)
100
REGULATOR CIRCUIT OUTPUT CURRENT (AMPS)
V
CE
Figure 7. Typical Dropout Voltage of a
MJE1123 and LT1123 Circuit
Figure 8. Maximum Forward Bias Safe
Operating Area
3
Motorola Bipolar Power Transistor Device Data
1
D = 0.5
D = 0.2
0.5
0.3
0.2
D = 0.1
0.1
R
R
(t) = r(t) R
θ
θ
θ
JC
JC
JC
°C/W MAX
P
D = 0.05
(pk)
= 1.67
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
t
t
1
D = 0.02
D = 0.01
0.03
0.02
2
1
(pk)
DUTY CYCLE, D = t /t
1 2
T
– T = P
R
(t)
JC
J(pk)
C
θ
SINGLE PULSE
0.05
0.01
0.01
0.02
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1K
t, TIME (ms)
Figure 9. Typical Thermal Response
4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
–––
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
A
K
Q
Z
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
1
2
3
U
H
L
R
J
V
G
T
U
V
D
N
Z
0.080
2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
5
Motorola Bipolar Power Transistor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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MJE1123/D
◊
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