MMBZ15VALT1 [MOTOROLA]
SOT-23 COMMON ANODE DUAL ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 24 & 40 WATTS PEAK POWER; SOT- 23共阳极双齐纳过电压瞬态抑制器24和40瓦峰值功率型号: | MMBZ15VALT1 |
厂家: | MOTOROLA |
描述: | SOT-23 COMMON ANODE DUAL ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 24 & 40 WATTS PEAK POWER |
文件: | 总6页 (文件大小:133K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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by MMBZ5V6ALT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Devices
Transient Voltage Suppressors
for ESD Protection
These dual monolithic silicon zener diodes are designed for applications
requiring transient overvoltage protection capability. They are intended for use
in voltage and ESD sensitive equipment such as computers, printers, business
machines, communication systems, medical equipment and other applications.
Their dual junction common anode design protects two separate lines using
only one package. These devices are ideal for situations where board space is
at a premium.
SOT–23 COMMON ANODE DUAL
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
24 & 40 WATTS
PEAK POWER
3
Specification Features:
•
SOT–23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
1
2
•
Peak Power — 24 or 40 Watts @ 1.0 ms (Unidirectional),
per Figure 5 Waveform
CASE 318–08
STYLE 12
•
•
•
Maximum Clamping Voltage @ Peak Pulse Current
Low Leakage < 5.0 µA
LOW PROFILE SOT–23
PLASTIC
ESD Rating of Class N (exceeding 16 kV) per the Human Body Model
Mechanical Characteristics:
1
•
•
•
•
•
Void Free, Transfer–Molded, Thermosetting Plastic Case
Corrosion Resistant Finish, Easily Solderable
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
Available in 8 mm Tape and Reel
3
2
PIN 1. CATHODE
2. CATHODE
3. ANODE
Use the Device Number to order the 7 inch/3,000 unit reel. Replace
the “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel.
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Value
Unit
Peak Power Dissipation @ 1.0 ms (1)
@ T ≤ 25°C
MMBZ5V6ALT1, MMBZ6V2ALT1
MMBZ15VALT1, MMBZ20VALT1
P
pk
24
40
Watts
A
Total Power Dissipation on FR–5 Board (2) @ T = 25°C
Derate above 25°C
°P
D
°
225
1.8
°mW°
mW/°C
A
Thermal Resistance Junction to Ambient
R
556
°C/W
θJA
Total Power Dissipation on Alumina Substrate (3) @ T = 25°C
Derate above 25°C
°P
D
°
300
2.4
°mW
mW/°C
A
Thermal Resistance Junction to Ambient
Junction and Storage Temperature Range
R
417
°C/W
°C
θJA
T
T
– 55 to +150
J
stg
Lead Solder Temperature — Maximum (10 Second Duration)
T
L
260
°C
(1) Non–repetitive current pulse per Figure 5 and derate above T = 25°C per Figure 6.
A
(2) FR–5 = 1.0 x 0.75 x 0.62 in.
(3) Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
*Other voltages may be available upon request
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Rev 1
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(V = 0.9 V Max @ I = 10 mA)
F
F
Max Reverse
Voltage @
(4)
(Clamping
Voltage)
Max Reverse
Leakage Current
Max
Reverse
Surge
Breakdown Voltage
Max Zener Impedance (5)
Maximum
Temperature
Coefficient of
I
RSM
V
(3)
(V)
ZT
Current
@ I
(mA)
I
@ V
Z
@ I
ZT
Z
(Ω)
@ I
(mA)
V
BR
T
R
R
ZT
(Ω)
ZK ZK
I
(4)
RSM
(A)
(µA)
(V)
(mA)
(mV/°C)
V
RSM
(V)
Min
Nom
Max
5.32
5.89
5.6
6.2
5.88
6.51
20
5.0
0.5
3.0
3.0
11
1600
—
0.25
—
3.0
8.0
8.7
1.26
2.80
1.0
—
2.76
(V = 1.1 V Max @ I = 200 mA)
F
F
Breakdown Voltage
Max Reverse
Voltage @ I
(Clamping Voltage) Coefficient of
Maximum
Temperature
Reverse Voltage
Working Peak
Max Reverse
Leakage Current
Max Reverse
Surge Current
(4)
RSM
V (3)
BR
(V)
@ I
(mA)
T
V
RWM
(V)
I
I (4)
RSM
(A)
RWM
V
V
RSM
(V)
BR
I
R
(nA)
(mV/°C)
12.3
Min
14.25
19.0
Nom
15
Max
15.75
21.0
1.0
1.0
12.0
17.0
50
50
1.9
1.4
21
28
20
17.2
(3) V /V
BR
measured at pulse test current I at an ambient temperature of 25°C.
T
Z
(4) Surge current waveform per Figure 5 and derate per Figure 6.
(5) Z and Z are measured by dividing the AC voltage drop across the device by the AC current supplied. The specfied limits are
ZT
Z(AC)
ZK
(5) I
= 0.1 I , with AC frequency = 1 kHz.
Z(DC)
TYPICAL CHARACTERISTICS
18
15
12
9
1000
100
10
1
6
0.1
3
0
–40
0.01
–40
0
+50
+100
+150
+25
+85
C)
+125
TEMPERATURE (
°C)
TEMPERATURE (°
Figure 1. Typical Breakdown Voltage
versus Temperature
Figure 2. Typical Leakage Current
versus Temperature
(Upper curve for each voltage is bidirectional mode,
lower curve is unidirectional mode)
MOTOROLA
2
MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1
320
280
300
250
200
ALUMINA SUBSTRATE
240
200
160
120
80
5.6 V
150
100
50
15 V
FR–5 BOARD
40
0
0
0
1
2
3
0
25
50
75
100
125
150
175
BIAS (V)
TEMPERATURE (°C)
Figure 3. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
Figure 4. Steady State Power Derating Curve
100
90
PULSE WIDTH (t ) IS DEFINED
P
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
t
r
80
PEAK VALUE — I
RSM
50% OF I
.
100
RSM
70
60
50
40
30
20
10
t
≤ 10 µs
r
I
RSM
2
HALF VALUE —
50
0
t
P
0
0
1
2
3
4
0
25
50
75
100
125
150
C)
175
200
t, TIME (ms)
T , AMBIENT TEMPERATURE (
°
A
Figure 5. Pulse Waveform
MMBZ5V6ALT1
Figure 6. Pulse Derating Curve
MMBZ5V6ALT1
100
100
RECTANGULAR
WAVEFORM, T = 25°C
A
RECTANGULAR
WAVEFORM, T = 25°C
A
BIDIRECTIONAL
BIDIRECTIONAL
10
UNIDIRECTIONAL
10
UNIDIRECTIONAL
1
1
0.1
1
10
PW, PULSE WIDTH (ms)
100
1000
0.1
UNIDIRECTIONAL
1
10
PW, PULSE WIDTH (ms)
100
1000
Figure 7. Maximum Non–repetitive Surge
Power, P versus PW
Figure 8. Maximum Non–repetitive Surge
Power, P (NOM) versus PW
pk
pk
Power is defined as V
RSM
x I (pk) where V
RSM
is
Power is defined as V (NOM) x I (pk) where
Z Z
Z
the clamping voltage at I (pk).
V (NOM) is the nominal zener voltage measured at
Z
Z
the low test current used for voltage classification.
MOTOROLA
3
MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1
TYPICAL COMMON ANODE APPLICATIONS
A quad junction common anode design in a SOT–23 pack-
age protects four separate lines using only one package.
This adds flexibility and creativity to PCB design especially
when board space is at a premium. Two simplified examples
of TVS applications are illustrated below.
Computer Interface Protection
A
B
C
D
KEYBOARD
TERMINAL
PRINTER
ETC.
FUNCTIONAL
DECODER
I/O
GND
MMBZ5V6ALT1
MMBZ6V2ALT1
MMBZ15VALT1
MMBZ20VALT1
Microprocessor Protection
V
V
DD
GG
ADDRESS BUS
RAM
ROM
DATA BUS
CPU
MMBZ5V6ALT1
MMBZ6V2ALT1
MMBZ15VALT1
MMBZ20VALT1
I/O
CLOCK
CONTROL BUS
GND
MMBZ5V6ALT1
MMBZ6V2ALT1
MMBZ15VALT1
MMBZ20VALT1
MOTOROLA
MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1
4
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
SOLDERING PRECAUTIONS
drain pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and soldering
should be 100°C or less.*
by T
, the maximum rated junction temperature of the
, the thermal resistance from the device junction to
J(max)
die, R
θJA
ambient, and the operating temperature, T . Using the
values provided on the data sheet for the SOT–23 package,
A
P
can be calculated as follows:
D
T
– T
A
J(max)
P
=
D
R
θJA
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the maximum
temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should be
allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T of 25°C, one can
A
calculate the power dissipation of the device which in this
case is 225 milliwatts.
150°C – 25°C
556°C/W
P
=
= 225 milliwatts
D
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad . Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
• Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
MOTOROLA
5
MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1
OUTLINE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
A
L
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
3
INCHES
MIN MAX
MILLIMETERS
S
C
B
DIM
A
B
C
D
G
H
J
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
1
2
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
V
G
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
K
L
S
H
J
D
V
K
CASE 318–08
ISSUE AE
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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MMBZ5V6ALT1/D
◊
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