MRF18060BSR3 [MOTOROLA]
RF Power Field Effect Transistors; 射频功率场效应晶体管
| 型号： | MRF18060BSR3 |
| 厂家： | 
MOTOROLA |
| 描述： | RF Power Field Effect Transistors |
| 文件： | 总8页 (文件大小：490K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF18060B/D
The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN-PCS/cellular radio and WLL
applications. Specified for GSM1930 - 1990 MHz.
MRF18060BR3
MRF18060BSR3
MRF18060BLSR3
• GSM Performance, Full Frequency Band (1930 - 1990 MHz)
Power Gain — 13 dB (Typ) @ 60 Watts CW
1.90 - 1.99 GHz, 60 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFETs
Efficiency — 45% (Typ) @ 60 Watts CW
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power
• Excellent Thermal Stability
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
CASE 465-06, STYLE 1
NI-780
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
MRF18060BR3
CASE 465A-06, STYLE 1
NI-780S
MRF18060BSR3, MRF18060BLSR3
MAXIMUM RATINGS
Rating
Symbol
Value
65
Unit
Vdc
Vdc
Drain-Source Voltage
Gate-Source Voltage
V
DSS
V
-0.5, +15
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
180
1.03
Watts
W/°C
C
D
Storage Temperature Range
Operating Junction Temperature
T
- 65 to +150
200
°C
°C
stg
T
J
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Value
Unit
R
θ
JC
0.97
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
Machine Model
2 (Minimum)
M3 (Minimum)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
Motorola, Inc. 2004
For More Information On This Product,
Go to: www.freescale.com
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(V = 0 Vdc, I = 10 µAdc)
V
65
—
—
—
—
—
—
6
Vdc
µAdc
µAdc
(BR)DSS
GS
D
Zero Gate Voltage Drain Current
(V = 26 Vdc, V = 0 Vdc)
I
I
DSS
GSS
DS
GS
Gate-Source Leakage Current
(V = 5 Vdc, V = 0 Vdc)
1
GS
DS
ON CHARACTERISTICS
Gate Threshold Voltage
V
V
2
—
3.9
4
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
(V = 10 Vdc, I = 300 µAdc)
DS
D
Gate Quiescent Voltage
(V = 26 Vdc, I = 500 mAdc)
2.5
—
—
4.5
—
—
DS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 2 Adc)
V
0.27
4.7
GS
D
Forward Transconductance
(V = 10 Vdc, I = 2 Adc)
g
fs
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance (Including Input Matching Capacitor in Package) (1)
C
—
—
—
160
740
2.7
—
—
—
pF
pF
pF
iss
(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
Output Capacitance (1)
C
oss
(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
Reverse Transfer Capacitance
C
rss
(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Common-Source Amplifier Power Gain @ 60 W (2)
G
dB
%
ps
(V = 26 Vdc, I
= 500 mA, f = 1930 - 1990 MHz)
11.5
40
13
45
—
—
—
DD
DQ
Drain Efficiency @ 60 W (2)
(V = 26 Vdc, I = 500 mA, f = 1930 - 1990 MHz)
η
DD
DQ
Input Return Loss (2)
(V = 26 Vdc, P = 60 W CW, I
IRL
dB
= 500 mA,
—
-10
DD
out
DQ
f = 1930 - 1990 MHz)
Output Mismatch Stress
Ψ
No Degradation In Output Power
Before and After Test
(V = 26 Vdc, P = 60 W CW, I
= 500 mA VSWR = 10:1,
DD
out
DQ
All Phase Angles at Frequency of Tests)
(1) Part is internally matched both on input and output.
(2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1900 band, ensuring batch-to-batch
consistency.
MRF18060BR3 MRF18060BSR3 MRF18060BLSR3
2
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
Freescale Semiconductor, Inc.
Z5
V
DD
+
R1
C3
C2
V
GG
C1
R2
RF
OUTPUT
C7
C8
R3
Z4
Z6
Z7
RF
INPUT
C9
C4
C6
Z1
Z2
Z3
C5
DUT
C1, C3
C2
C4, C8
C5
10 pF, 100B Chip Capacitors
Z1
Z2
Z3
Z4
Z5
Z6
Z7
PCB
0.60″ x 0.09″ Microstrip
1.00″ x 0.09″ Microstrip
0.51″ x 0.94″ Microstrip
0.59″ x 0.98″ Microstrip
0.79″ x 0.09″ Microstrip
1.38″ x 0.09″ Microstrip
0.79″ x 0.09″ Microstrip
10 mF, 35 V Electrolytic Tantalum Capacitor
1.2 pF, 100B Chip Capacitors
1.0 pF, 100B Chip Capacitor
2.2 pF, 100B Chip Capacitor
0.3 pF, 100B Chip Capacitors
10 kΩ Chip Resistors (0805)
1.0 kΩ Chip Resistor (0805)
C6
C7, C9
R1, R2
R3
Teflon Glass
Figure 1. 1930 - 1990 MHz Test Fixture Schematic
V
V
BIAS
C2
SUPPLY
R1
C1
C3
C7
R2
R3
C6
C9
C4
C5
C8
Ground
Ground
MRF18060
Figure 2. 1930 - 1990 MHz Test Fixture Component Layout
MOTOROLA RF DEVICE DATA
MRF18060BR3 MRF18060BSR3 MRF18060BLSR3
For More Information On This Product,
Go to: www.freescale.com
3
Freescale Semiconductor, Inc.
V
bias
C1
T1
R1
R5
R2
V
supply
+
C2
C3
C4
R3
R4
T2
C5
R6
RF
INPUT
RF
OUTPUT
Z6
Z7
Z1
Z2
Z3
Z4
Z5
C7
C8
C6
C1
C2
C3, C5, C8
C4
C6
C7
R1
R2, R6
R3
R4
1 mF Chip Capacitor (0805)
100 nF Chip Capacitor (0805)
T1
T2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
LP2951 Micro-8 Voltage Regulator
BC847 SOT-23 NPN Transistor
0.159″ x 0.055″ Microstrip
0.982″ x 0.055″ Microstrip
0.087″ x 0.055″ Microstrip
0.512″ x 0.787″ Microstrip
0.433″ x 1.220″ Microstrip
1.039″ x 0.118″ Microstrip
10 pF Chip Capacitors, ACCU-P (0805)
10 mF, 35 V Tantalum Electrolytic Capacitor
1.8 pF Chip Capacitor, ACCU-P (0805)
1 pF Chip Capacitor, ACCU-P (0805)
10 Ω Chip Resistor (0805)
1 kΩ Chip Resistors (0805)
1.2 kΩ Chip Resistor (0805)
0.268″ x 0.055″ Microstrip
Substrate = 0.5 mm Teflon Glass, ε = 2.55
2.2 kΩ Chip Resistor (0805)
r
R5
5 kΩ, SMD Potentiometer
Figure 3. 1800 - 2000 MHz Demo Board Schematic
V
Ground
V
supply
bias
C4
R1
C1
R2
R3
T1
R4
R5
T2
C2
C3
C5
R6
C8
C7
C6
MRF18060
Figure 4. 1800 - 2000 MHz Demo Board Component Layout
MRF18060BR3 MRF18060BSR3 MRF18060BLSR3
4
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD)
16
15
14
13
12
11
10
100
90
80
70
60
50
40
30
20
I
= 750 mA
DQ
P
= 5 W
in
500 mA
300 mA
2.5 W
1 W
100 mA
V
= 26 Vdc
f = 1880 MHz
DD
V
= 26 Vdc
DD
= 500 mA
9
8
10
0
I
DQ
1
10
, OUTPUT POWER (WATTS)
100
18
20
22
24
26
28
30
P
V , SUPPLY VOLTAGE (VOLTS)
DD
out
Figure 5. Power Gain versus
Output Power
Figure 6. Output Power versus Supply Voltage
90
80
70
60
50
40
30
20
90
80
70
60
50
40
30
20
60
55
50
P
= 6 W
3 W
in
h
45
P
out
40
35
30
25
V
= 26 Vdc
= 500 mA
DD
I
DQ
1 W
V
I
= 26 Vdc
= 500 mA
DD
0.5 W
DQ
10
0
20
15
10
0
f = 1880 MHz
1800
1820
1840
1860
1880
1900
0
1
2
3
4
5
6
f, FREQUENCY (MHz)
P , INPUT POWER (WATTS)
in
Figure 7. Output Power versus Frequency
Figure 8. Output Power and Efficiency
versus Input Power
15.0
0
−2
14.5
14.0
13.5
13.0
12.5
12.0
11.5
11.0
G
−4
ps
−6
−8
−10
−12
−14
−16
IRL
V
I
= 26 Vdc
DD
= 500 mA
−18
−20
10.5
10.0
DQ
1700
1800
1900
2000
2100
f, FREQUENCY (MHz)
Figure 9. Wideband Gain and IRL
(at Small Signal)
MOTOROLA RF DEVICE DATA
MRF18060BR3 MRF18060BSR3 MRF18060BLSR3
For More Information On This Product,
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5
Freescale Semiconductor, Inc.
Z = 5 Ω
o
Z
load
f = 1700 MHz
f = 1700 MHz
f = 2100 MHz
Z
source
f = 2100 MHz
V
= 26 V, I = 500 mA, P = 60 W CW
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
1700
1800
1900
2000
2100
0.60 - j2.53
0.80 - j3.20
0.92 - j3.42
1.07 - j3.59
1.31 - j4.00
2.27 - j3.44
2.05 - j3.05
1.90 - j2.90
1.64 - j2.88
1.29 - j2.99
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
load
=
Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
Z
source
load
Figure 10. Series Equivalent Input and Output Impedance
MRF18060BR3 MRF18060BSR3 MRF18060BLSR3
6
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
B
G
2X
Q
1
M
M
M
B
bbb
T
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
3
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
K
B
2
(FLANGE)
D
INCHES
DIM MIN MAX
MILLIMETERS
M
M
M
B
bbb
T
A
MIN
33.91
9.65
MAX
34.16
9.91
A
B
1.335
0.380
0.125
0.495
0.035
0.003
1.345
0.390
0.170
0.505
0.045
0.006
C
3.18
4.32
(LID)
R
(INSULATOR)
M
N
D
12.57
0.89
0.08
12.83
1.14
0.15
E
M
M
M
M
M
M
M
M
bbb
T
A
B
ccc
T
T
A
A
B
F
G
1.100 BSC
27.94 BSC
(INSULATOR)
S
(LID)
H
0.057
0.170
0.774
0.772
.118
0.067
0.210
0.786
0.788
.138
1.45
4.32
1.70
5.33
K
M
M
M
M
aaa
B
ccc
T
A
B
M
19.66
19.60
3.00
19.96
20.00
3.51
H
N
Q
R
0.365
0.365
0.375
0.375
9.27
9.27
9.53
9.52
C
S
aaa
bbb
ccc
0.005 REF
0.010 REF
0.015 REF
0.127 REF
0.254 REF
0.381 REF
F
SEATING
PLANE
E
A
T
CASE 465-06
ISSUE F
STYLE 1:
A
PIN 1. DRAIN
2. GATE
3. SOURCE
(FLANGE)
NI-780
MRF18060BR3
4X U
(FLANGE)
4X Z
(LID)
B
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
2X K
2
B
(FLANGE)
D
INCHES
DIM MIN MAX
MILLIMETERS
M
M
M
bbb
T
A
B
MIN
20.45
9.65
3.18
12.57
0.89
0.08
1.45
4.32
19.61
19.61
9.27
9.27
−−−
MAX
20.70
9.91
4.32
12.83
1.14
0.15
1.70
5.33
20.02
20.02
9.53
9.52
1.02
0.76
A
B
0.805
0.380
0.125
0.495
0.035
0.003
0.057
0.170
0.774
0.772
0.365
0.365
−−− 0.040
−−− 0.030
0.005 REF
0.010 REF
0.015 REF
0.815
0.390
0.170
0.505
0.045
0.006
0.067
0.210
0.786
0.788
0.375
0.375
C
D
E
(LID)
N
(LID)
R
F
M
M
M
ccc
T
A
B
M
M
M
M
H
ccc
T
T
A
A
B
K
(INSULATOR)
S
M
(INSULATOR)
M
N
M
M
M
M
M
aaa
B
bbb
T
A
B
R
S
H
U
Z
−−−
C
aaa
bbb
ccc
0.127 REF
0.254 REF
0.381 REF
3
F
SEATING
PLANE
E
A
STYLE 1:
T
CASE 465A-06
ISSUE F
PIN 1. DRAIN
2. GATE
5. SOURCE
A
(FLANGE)
NI-780S
MRF18060BSR3, MRF18060BLSR3
MOTOROLA RF DEVICE DATA
MRF18060BR3 MRF18060BSR3 MRF18060BLSR3
For More Information On This Product,
Go to: www.freescale.com
7
Freescale Semiconductor, Inc.
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including
“Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the
rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part.
MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective
owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
E Motorola Inc. 2004
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USA/EUROPE/LOCATIONS NOT LISTED:
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P.O. Box 5405, Denver, Colorado 80217
1-800-521-6274 or 480-768-2130
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3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan
81-3-3440-3569
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre,
2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong
852-26668334
HOME PAGE: http://motorola.com/semiconductors
For More Information On This Product,
◊
MRF18060B/D
Go to: www.freescale.com
相关型号：
MRF18085A
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MOTOROLA
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