MRF644 [MOTOROLA]
RF POWER TRANSISTOR NPN SILICON; RF功率晶体管NPN硅
| 型号： | MRF644 |
| 厂家： | 
MOTOROLA |
| 描述： | RF POWER TRANSISTOR NPN SILICON |
| 文件： | 总4页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MRF644/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
. . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial
and commercial FM equipment operating to 512 MHz.
•
Specified 12.5 Volt, 470 MHz Characteristics —
Output Power = 25 Watts
25 W, 470 MHz
Minimum Gain = 6.2 dB
Efficiency = 60%
CONTROLLED Q
RF POWER
TRANSISTOR
NPN SILICON
•
•
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
Built–In Matching Network for Broadband Operation
Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @
16–Volt High Line and 50% Overdrive
•
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
CASE 316–01, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
16
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CBO
V
EBO
36
4.0
4.0
Collector Current — Continuous
I
C
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
103
0.59
Watts
W/°C
C
Storage Temperature Range
THERMAL CHARACTERISTICS
T
stg
–65 to +150
°C
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
R
1.7
°C/W
θJC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = 20 mAdc, I = 0)
V
16
36
4.0
—
—
—
—
—
—
—
Vdc
Vdc
(BR)CEO
C
B
Collector–Emitter Breakdown Voltage
(I = 20 mAdc, V = 0)
V
(BR)CES
(BR)EBO
C
BE
Emitter–Base Breakdown Voltage
(I = 5.0 mAdc, I = 0)
V
—
Vdc
E
C
Collector Cutoff Current
(V = 15 Vdc, V = 0, T = 25°C)
I
5.0
mAdc
(continued)
CES
CE BE
C
REV 6
Motorola, Inc. 1994
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I = 4.0 Adc, V
h
FE
40
70
100
—
= 5.0 Vdc)
CE
C
DYNAMIC CHARACTERISTICS
Output Capacitance
C
—
60
85
pF
ob
pe
(V
CB
= 12.5 Vdc, I = 0, f = 1.0 MHz)
E
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
G
6.2
—
7.0
5.0
60
—
6.0
—
dB
Watts
%
(V
CC
= 12.5 Vdc, P
= 25 W, I (MAX) = 3.6 Adc, f = 470 MHz)
C
out
out
out
Input Power
(V = 12.5 Vdc, P
P
in
= 25 W, f = 470 MHz)
CC
Collector Efficiency
(V = 12.5 Vdc, P
η
55
= 25 W, I (MAX) = 3.6 Adc, f = 470 MHz)
CC
C
Output Mismatch Stress
(V = 16 Vdc, P = Note 1, f = 470 MHz,
VSWR = 20:1, All Phase Angles)
ψ *
No Degradation in Output Power
CC in
Series Equivalent Input Impedance
Z
—
—
1.2 + j3.3
1.9 + j2.1
—
—
Ohms
Ohms
in
(V
CC
= 12.5 Vdc, P = 25 W, f = 470 MHz)
out
Series Equivalent Output Impedance
(V = 12.5 Vdc, P = 25 W, f = 470 MHz)
Z
OL
CC out
NOTE:
1. P = 150% of Drive Requirement for 25 W Output at 12.5 Vdc.
in
* ψ = Mismatch stress factor — the electrical criterion established to verify the device resistance to load mismatch failure. The mismatch stress
test is accomplished in the standard test fixture (Figure 1) terminated in a 20:1 minimum load mismatch at all phase angles.
RFC1
C12 C13
C11
C14
B
B
SOCKET
C6
C10
L2
C4
L1
Z5
Z6
Z7
Z8
Z9
C9
Z1
Z2
Z3
Z4
D.U.T.
C7
C8
C1
C2
C3
C5
C1, C2, C7, C8 — 1.0–20 pF Johanson Variable
C3 — 27 pF 100 mil ATC
C4 — 30 pF 100 mil ATC
C5, C6 — 33 pF 100 mil ATC
C9 — 250 pF 100 mil ATC
C10 — 100 pF UNELCO
C12, C13 — 680 pF Feedthrough
L1 — 5″ #22 AWG 0.100″ ID
L2 — 5″ #20 AWG 0.187″ ID
Z3 — 0.20″ x 0.20″ Microstrip
Z4, Z5 — 1/2″ #18 AWG bent in a
Z4, Z5 — “V” shape 1/8″ Wide
Z6 — 0.20″ x 0.20″ Microstrip
Z7 — 0.70″ x 0.20″ Microstrip
Z8 — 0.33″ x 0.20″ Microstrip
Z9 — 0.50″ x 0.20″ Microstrip
RFC1 — Ferroxcube VK200–20–4B
B — Ferroxcube Bead 56–590–65–3B
Z1 — 0.25″ x 0.20″ Microstrip
Z2 — 1.63″ x 0.20″ Microstrip
C11, C14 — 1.0 µF 35 V TANTALUM
Board — 62.5 mil Glass Teflon, ε = 2.55
r
Figure 1. Test Circuit Schematic
MRF644
2
MOTOROLA RF DEVICE DATA
40
30
20
10
0
40
30
20
10
0
f = 470 MHz
P
= 8 W
6 W
in
V
= 13.6 V
CC
12.5 V
V
= 12.5 V
CC
440
460
480
500
520
1
2
3
4
5
6
7
8
9
f, FREQUENCY (MHz)
P
, POWER INPUT (WATTS)
in
Figure 2. Power Output versus Power Input
Figure 3. Power Output versus Frequency
40
30
20
10
0
40
30
20
10
0
f = 470 MHz
f = 470 MHz
P
= 6 W
in
V
= 13.6 V
CC
12.5 V
4
6
8
10
12
14
16
18
20
1
2
3
4
5
6
7
8
9
V
, SUPPLY VOLTAGE (VOLTS)
P
, POWER INPUT (WATTS)
CC
in
Figure 4. Power Output versus Supply Voltage
Figure 5. Power Saturation Profile
Z
in
470
512
f = 450 MHz
0
5.0
f = 450 MHz
5.0
10
10
Z
*
OL
5.0
512
15
20
10
15
FREQUENCY
MHz
Z
Z
*
in
(OHMS)
OL
(OHMS)
450
470
512
1.21 + j3.47 1.76 + j1.96
1.21 + j3.25 1.90 + j2.14
1.06 + j2.09 1.96 + j2.34
20
25
Z
* = Conjugate of the optimum load impedance into which the device output
OL
operates at a given output power, voltage and frequency.
Figure 6. Series Equivalent Input–Output Impedance
MOTOROLA RF DEVICE DATA
MRF644
3
PACKAGE DIMENSIONS
F
D
4
NOTES:
1. FLANGE IS ISOLATED IN ALL STYLES.
R
Q
K
3
INCHES
MILLIMETERS
DIM
MIN
MAX
25.14
12.95
7.62
MIN
0.960
0.490
0.235
0.210
0.085
0.200
0.720
0.004
0.405
0.150
0.150
0.115
0.120
0.470
MAX
0.990
0.510
0.300
0.220
0.120
0.210
0.730
0.006
0.440
0.160
0.170
0.130
0.130
0.495
A
B
C
D
E
F
H
J
K
L
24.38
12.45
5.97
5.33
2.16
5.08
18.29
0.10
10.29
3.81
3.81
2.92
3.05
11.94
1
2
5.58
3.04
5.33
18.54
0.15
L
11.17
4.06
B
C
J
N
Q
R
U
4.31
3.30
E
3.30
12.57
N
H
A
STYLE 1:
U
PIN 1. EMITTER
2. COLLECTOR
3. EMITTER
4. BASE
CASE 316–01
ISSUE D
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers:
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JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.
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MRF644/D
◊
相关型号：
MRF6522-60
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 360B-04, 3 PIN
MOTOROLA
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