MRFIC1807 [MOTOROLA]
1.8 GHz POWER AMPLIFIER AND TRANSMIT/RECEIVE SWITCH GaAs MONOLITHIC INTEGRATED CIRCUIT; 1.8 GHz功率放大器和发射/接收开关砷化镓单片集成电路
| 型号： | MRFIC1807 |
| 厂家： | 
MOTOROLA |
| 描述： | 1.8 GHz POWER AMPLIFIER AND TRANSMIT/RECEIVE SWITCH GaAs MONOLITHIC INTEGRATED CIRCUIT |
| 文件： | 总8页 (文件大小：230K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Order this document
by MRFIC1807/D
SEMICONDUCTOR TECHNICAL DATA
The MRFIC Line
Designed primarily for use in DECT, Japan Personal Handy System (PHS)
and other wireless Personal Communication Systems (PCS) applications.
The MRFIC1807 includes a single–stage power amplifier and transmit/receive
switch in a low–cost SOIC–16 package. The amplifier portion employs a
depletion mode power GaAs MESFET and produces up to +27 dBm output
with +19 dBm input. On–chip power control circuitry allows bias adjustment for
optimum performance. The T/R switch is capable of handling up to +28 dBm
through the transmit path without significant increase in insertion loss. The
switch is controlled by CMOS logic level signals — no negative control voltage
required. The MRFIC1807 is sized to be driven by the MRFIC1806 Driver/
Ramp IC.
1.8 GHz POWER AMPLIFIER
AND TRANSMIT/RECEIVE
SWITCH
GaAs MONOLITHIC
INTEGRATED CIRCUIT
Together with the rest of the MRFIC1800 GaAs ICs, this family offers the
complete transmit and receive functions, less LO and filters, needed for a
typical 1.8 GHz cordless telephone.
•
•
•
•
•
•
•
•
•
Usable 1500–2200 MHz
8.0 dB Gain Including Switch
+26 dBm Minimum Output Power at Antenna Port
1.0 dB Typ RX Path Insertion Loss
Simple Off–Chip Matching for Maximum Flexibility
3.0 to 5.0 V Supply
CASE 751B–05
(SO–16)
No Spurious Outputs for Load VSWR up to 8:1
CMOS Level Switching Signal for T/R Switch
Order MRFIC1807R2 for Tape and Reel.
R2 Suffix = 2,500 Units per 16 mm, 13 inch Reel.
•
Device Marking = M1807
ANTENNA
GND
1
2
3
4
5
6
7
8
16 REG V
DD
15 GND
TX IN
14 RX OUT
PA OUT
GND
13 V
SS
REG V
DD
12 GND
11 GND
10 TX/RX
GND
GATE
BIAS
RF IN
GND
9
PCNTRL
Figure 1. Pin Connection and Functional Block Diagram
REV 2
Motorola, Inc. 1997
ABSOLUTE MAXIMUM RATINGS (T = 25°C Unless Otherwise noted)
A
Rating
Symbol
Limit
6.0
Unit
Vdc
Vdc
Vdc
dBm
Vdc
Vdc
°C
PA Supply Voltage
Supply Voltage
V
DD
REG V
4.5
DD
SS
Supply Voltage
V
–4.0
RF Input Power
P
+25
in
Switch Control Voltage
PA Control Voltage
TX/RX
6.0
PCNTRL
3.0
Ambient Operating Temperature
Storage Temperature Range
T
A
–10 to +70
–65 to +150
24
T
stg
°C
Thermal Resistance, Junction to Case
θ
°C/W
JC
RECOMMENDED OPERATING RANGES
Parameter
Symbol
Value
1.5 to 2.2
Unit
GHz
Vdc
Vdc
Vdc
dBm
Vdc
Vdc
Vdc
RF Input Frequency
f
RF
PA Supply Voltage
V
DD
3.0 to 5.0
Supply Voltage
REG V
2.9 to 3.1
DD
SS
Supply Voltage
V
–2.75 to –2.25
+5.0 to +23
2.8 to 3.5
RF Input Power
P
IN
Switch Control Voltage, High (TX Mode)
Switch Control Voltage, Low (RX Mode)
PA Control Voltage
TX/RX
TX/RX
–0.2 to 0.2
0.0 to 2.5
PCNTRL
ELECTRICAL CHARACTERISTICS (1)
Transmit Mode (V
DD
= 3.5 V, REG V
DD
= 3.0 V, T = 25°C, V
= –2.5 V, PCNTRL 0 V to 2.5 V, P = 20 dBm @ 1.9 GHz,
SS IN
A
TX/RX = 3 V, P
Measured at ANT Port)
OUT
Characteristic
Min
7.0
26
—
Typ
8.0
26.8
25
Max
—
Unit
Small Signal Gain (P = 0 dBm, PCNTRL set for I
IN DDQ
= 180 mA)
dB
dBm
dBm
dBc
µsec
mA
Output Power (PCNTRL adjusted for efficiency ≥ 35%)
Output 1.0 dB Compression (PCNTRL set for I = 180 mA)
—
—
DDQ
= 26 dBm)
Harmonic Output (PCNTRL set for P
Switch RX to TX Switching Time
TX/RX Control Input Current, Pin 10
—
–40
0.1
0.2
40
—
OUT
—
—
—
—
Drain Efficiency (P
= 26 dBm) (2)
—
—
%
out
Supply Current, I
SS
—
0.8
0.8
15
1.2
1.2
—
mA
Supply Current, REG I
—
mA
DD
PCNTRL Control Input Current (Pin 9)
Leakage Power at RX Port
—
µA
—
–1
+ 6
dBm
Receive Mode (V
= 0 V, REG V
= 3.0 V, V
= –2.5 V, TX/RX = 0 V, T = 25°C, Freq = 1.9 GHz)
SS A
DD
DD
Characteristic
Min
—
Typ
1.0
1.0
60
Max
1.3
Unit
dB
ANT to RX Insertion Loss
Switch TX to RX Switching Time
Supply Current, REG I
—
—
µsec
µA
—
250
250
DD
Supply Current, I
SS
—
60
µA
NOTES:
1. Measured with circuit configuration shown in Figure 2.
2. Includes switch loss.
MRFIC1807
2
MOTOROLA RF DEVICE DATA
C5
4.7 pF
ANT
REG V
3 V
DD
50 OHM
1
2
3
4
5
6
7
8
16
15
14
13
12
V
3.5 V
ANT
DD
REG V
DD
C7
22 pF
GND
GND
C5
T1 (FR4)
= 100
L = 22 mm
.01 µF
RX OUT
50 OHM
Z
o
TX IN
RX OUT
C4
C3
V
SS
– 2.5 V
100 pF 22 pF
PA
OUT
C2
2.2 pF
V
SS
C6
1.8 pF
REG V
DD
GND
GND
GND
GND 11
GATE
BIAS
RF IN
50 OHM
3 V (TX)
0 V (RX)
10
TX/RX
RF IN
GND
C1
2.2 pF
TX/RX
9
PCNTRL
MRFIC1807
T2 (FR4)
= 70
Z
o
L = 2 mm
PCNTRL
1 V TYP
Figure 2. 1.9 GHz Applications Circuit Configuration
Table 1. Small Signal S–Parameters
(V
DD
= 3.5 V, I
= 180 mA, T = 25°C, no input or output matching)
DDQ A
S
11
S
21
S
12
S
22
Freq (GHz)
1.5
Mag
Angle
–171.5
175.7
167.3
160.3
154.2
148.3
142.5
137.0
131.4
126.6
121.7
Mag
Angle
82.6
71.7
63.4
56.2
49.2
43.0
36.8
31.2
26.4
21.1
16.0
Mag
0.104
0.110
0.108
0.106
0.120
0.118
0.114
0.120
0.127
0.124
0.126
Angle
74.5
69.2
64.0
58.7
54.0
49.6
45.2
40.6
37.0
33.8
30.4
Mag
Angle
0.614
0.695
0.747
0.777
0.799
0.814
0.826
0.835
0.842
0.856
0.870
2.203
1.871
1.647
1.473
1.341
1.230
1.128
1.041
0.959
0.895
0.840
0.741
0.746
0.745
0.746
0.753
0.758
0.764
0.767
0.780
0.796
0.808
175.4
171.5
167.4
163.0
158.9
154.8
150.6
146.7
143.4
139.8
136.4
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
MOTOROLA RF DEVICE DATA
MRFIC1807
3
30
25
20
400
350
300
250
200
V
= 3.5 V
DD
f = 1.9 GHz
= 180 mA
f = 1.9 GHz
–10°C
V
= 3.5 V
= 180 mA
DD
I
DDQ
I
DDQ
–10°C
70°C
25°C
15
10
5
T
= 25°C
A
25°C
150
100
–10°C
T
= 70°C
A
–3
0
3
6
9
12
15
18
21
24
–3
0
3
6
9
12
15
18
21
24
P
, INPUT POWER (dBm)
P
, INPUT POWER (dBm)
IN
IN
Figure 3. Output Power versus Input Power
Figure 4. Supply Current versus Input Power
30
25
20
15
500
5 V
f = 1.9 GHz
450
400
350
300
250
200
150
100
T
= 25°C
A
PCNTRL Set For
= 180 mA @ 3.5 V
3.5 V
I
DDQ
V
= 3 V
DD
5 V
T
= 25°C
f = 1.9 GHz
PCNTRL Set For
A
10
5
3.5 V
V
= 3 V
DD
I
= 180 mA @ 3.5 V
DDQ
15
–3
0
3
6
9
12
18
21
24
–3
0
3
6
9
12
P , INPUT POWER (dBm)
IN
15
18
21
24
P
, INPUT POWER (dBm)
IN
Figure 5. Output Power versus Input Power
Figure 6. Supply Current versus Input Power
30
25
350
300
2 V
20
15
10
5
250
200
PCNTRL = 2 V
0 V
150
100
50
V
= 3.5 V
DD
f = 1.9 GHz
= 25
V
= 3.5 V
DD
= 25°C
1 V
T
A
T
°C
A
f = 1.9 GHz
1 V
0
PCNTRL = 0 V
–5
0
–3
0
3
6
9
12
15
18
21
24
–3
0
3
6
9
12
15
18
21
24
P
, INPUT POWER (dBm)
P
, INPUT POWER (dBm)
IN
IN
Figure 7. Output Power versus Input Power
Figure 8. Supply Current versus Input Power
MRFIC1807
4
MOTOROLA RF DEVICE DATA
350
325
300
275
250
225
200
175
150
27.5
27
–10
°
C
–10°C
70°C
26.5
26
T
= 25°C
A
T
= 25°C
A
70°
C
25.5
25
70°C
P
V
= 20 dBm
24.5
24
P
V
= 20 dBm
in
in
= 3.5 V
= 180 mA
= 3.5 V
= 180 mA
DD
DD
I
I
DDQ
DDQ
23.5
1.5
1.6
1.7
1.8
1.9
2
2.1
2.2
1.5
1.6
1.7
1.8
1.9
2
2.1
2.2
f, FREQUENCY (GHz)
f, FREQUENCY (GHz)
Figure 9. Supply Current versus Frequency
Figure 10. Output Power versus Frequency
600
500
400
300
200
100
0
10
9
V
= 3.5 V
DD
–10°C
8
7
6
5
T
= 25°C
A
70°C
70°C
T
= 25°C
A
–10°C
P
V
= 0 dBm
in
= 3.5 V
= 180 mA
DD
4
3
I
DDQ
0
2.5
0.5
1
1.5
2
1.5
1.6
1.7
1.8
1.9
2
2.1
2.2
PCNTRL (VOLTS)
f, FREQUENCY (GHz)
Figure 11. Quiescent Supply Current versus PCNTRL
Figure 12. Small Signal Gain versus Frequency
1.5
1.4
1.3
1.2
3
–10°C
T
= 25°C
A
2
1
P
V
= 26 dBm
= 3.5 V
= 180 mA
REG V
= 3 V
out
DD
DD
TX/RX = 0 V
I
DDQ
0
T
= 25°C
A
70°C
–1
–2
–3
–4
1.1
1
1.5
1.6
1.7
1.8
1.9
2
2.1
2.2
1.5
1.6
1.7
1.8
1.9
2
2.1
2.2
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 13. Leakage Power at RX Port in TX
Mode versus Frequency
Figure 14. RX Path Insertion Loss in RX Mode
versus Frequency
MOTOROLA RF DEVICE DATA
MRFIC1807
5
425
400
375
350
325
300
275
27.5
27.4
27.3
27.2
27.1
27.0
26.9
26.8
26.7
26.6
26.5
f = 1.9 GHz
V
P
= 3.5 V
DD
= 20 dBm
in
–10°C
70°C
25°C
T
= 70°C
A
f = 1.9 GHz
–10°C
V
P
= 3.5 V
DD
= 20 dBm
T
= 25°C
A
in
0
0.5
1
1.5
2
2.5
0
0.5
1
1.5
2
2.5
PCNTRL (VOLTS)
PCNTRL (VOLTS)
Figure 15. Supply Current versus PCNTRL
Figure 16. Output Power versus PCNTRL
28
–40
V
= 3.5 V
P
out
DD
f = 1.9 GHz
26
24
22
20
–45
Mod = 384 kb/s
π
/4 DQPSK
T
I
= 25°C
A
–50
= 180 mA
DDQ
600 kHz OFFSET
900 kHz OFFSET
–55
–60
18
16
–65
–70
10
12
14
16
18
20
22
P
, INPUT POWER (dBm)
IN
Figure 17. Output Power and Adjacent Channel
Power Ratio versus Input Power
MRFIC1807
6
MOTOROLA RF DEVICE DATA
DESIGN AND APPLICATIONS INFORMATION
DESIGN PHILOSOPHY
The MRFIC1807 is designed to operate with the MRFIC1806
Driver/Ramp IC in 1.9 GHz Personal Communication System
(PCS) applications such as Europe’s DECT and Japan’s PHS.
The design incorporates a depletion mode GaAs power MES-
FET with a high–power transmit/receive switch and
associated bias circuitry in one low–cost SOIC–16 package.
The power MESFET is sized to produce at least 27 dBm
saturated output power, including switch loss, from a 3.5 V
supply, but the output power can be controlled using the
PCNTRL input. This control voltage also allows setting of the
quiescent current of the FET. PCNTRL can be set to give
best efficiency or linearity for the particular system application.
The TX/RX control pin allows fast switching of the T/R switch
for TDMA applications. When switching from transmit to
receive, the battery supply voltage should be removed from
the PA (Pin 4), to avoid excessive current drain. This is usu-
ally accomplished using an external pass transistor con-
trolled by the TX/RX signal. Alternatively, if PCNTRL is
reduced to 0 V during RX mode, the bias current is reduced
to nearly zero.
2.0 sec has been shown to give adequate adjacent channel
power performance. Most DECT realizations have the modu-
lation applied to the transmit VCO so the most straight for-
ward way of implementing this ramping function is at the
power amplifier. The MRFIC1806 Driver/Ramp IC has an
on–chip ramping circuit specifically designed for DECT.
When ramped in this manner, the MRFIC1806 will supply the
appropriately ramped RF signal to the MRFIC1807 which
only has to be turned on and off with TX/RX. Alternate off–
chip ramping can be implemented either with external com-
ponents or at baseband. Consult the MRFIC1806 datasheet
for more information.
PHS APPLICATIONS
For Japan’s Personal Handy System applications, the
modulation is /4 DQPSK. When amplified with a non–linear
amplifier, the signal will regrow the sidebands which have
been carefully filtered at baseband, resulting in adjacent
channel interference. To avoid this spectral regrowth, the
amplifier must be operated “backed off” from saturation. The
amount of backoff required has been shown to be a function
of amplifier saturated output capability and may be as high
as 5.0 dB. The PHS specification calls for a maximum aver-
age power during a burst to be 19 dBm. This is consistent
with 5.0 dB backoff from the DECT operating point so the
same DECT operating condition could be used. Alternatively,
PCNTRL can be adjusted for a lower bias point to improve
efficiency or higher bias for better linearity. With /4 DQPSK
modulation, ramping can be accomplished in the encoder so
no external ramp circuit is needed. See the MRFIC1806 data
sheet for further details.
The Transmit/Receive switch is a reflective MESFET
design which is optimized for low loss and power handling in
transmit mode. The design can handle 28 dBm of transmit
power without significant increase in insertion loss. A regu-
lated 3.0 Volt supply is required at pin 16 for the T/R switch
and the bias and control circuitry.
DECT APPLICATIONS
Figure 2 shows the component values for a DECT imple-
mentation of the MRFIC1807. For use in equipment designed
for DECT, the power amplifier is operated close to saturation
to improve device efficiency. Maximum power output at the
antenna connector is 24 dBm during a burst. The constant en-
velope characteristics of the GMSK modulation allow non–lin-
ear amplification without spectral regrowth. The transmit
signal must be shaped or “ramped” to meet system transmit
turn on time requirements of 10 sec minimum while not splat-
tering into adjacent channels. A turn on time on greater than
EVALUATION BOARDS
Evaluation boards are available for RF Monolithic Inte-
grated Circuits by adding a “TF” suffix to the device type.
For a complete list of currently available boards and ones
in development for newly introduced product, please con-
tact your local Motorola Distributor or Sales Office.
MOTOROLA RF DEVICE DATA
MRFIC1807
7
PACKAGE DIMENSIONS
–A–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
16
1
9
8
–B–
P 8 PL
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
M
S
0.25 (0.010)
B
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
G
MILLIMETERS
INCHES
DIM
A
B
C
D
MIN
9.80
3.80
1.35
0.35
0.40
MAX
10.00
4.00
1.75
0.49
1.25
MIN
MAX
0.393
0.157
0.068
0.019
0.049
F
0.386
0.150
0.054
0.014
0.016
R X 45
K
C
F
G
J
K
M
P
R
1.27 BSC
0.050 BSC
–T–
SEATING
PLANE
0.19
0.10
0
0.25
0.25
7
0.008
0.004
0
0.009
0.009
7
J
M
D
16 PL
5.80
0.25
6.20
0.50
0.229
0.010
0.244
0.019
M
S
S
0.25 (0.010)
T
B
A
CASE 751B–05
ISSUE J
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
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MRFIC1807/D
◊
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