MRFIC1813 [NXP]

IC,UPCONVERTER,GAAS,TSSOP,16PIN,PLASTIC;
MRFIC1813
型号: MRFIC1813
厂家: NXP    NXP
描述:

IC,UPCONVERTER,GAAS,TSSOP,16PIN,PLASTIC

PC 射频 微波
文件: 总8页 (文件大小:331K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Freescale Semiconductor, Inc.  
Order this document  
by MRFIC1813/D  
SEMICONDUCTOR TECHNICAL DATA  
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005  
The MRFIC Line  
Designed primarily for use in wireless Personal Communication Systems  
(PCS) applications such as Digital European Cordless Telephone (DECT),  
Japan’s Personal Handy System (PHS) and the emerging North American  
systems. The MRFIC1813 is also applicable to 2.4 GHz ISM equipment. The  
device combines a balanced upmixer and a transmit exciter amplifier in a  
low-cost TSSOP–16 package. Minimal off-chip matching is required while  
allowing for maximum flexibility and efficiency. The mixer is optimized for  
low–side injection and provides more than 12 dB of conversion gain with over 0  
dBm output at 1 dB gain compression. Image filtering is implemented off-chip to  
allow maximum flexibility. A CMOS compatible ENABLE pin allows standby  
operation where the current drain is less than 250 A.  
1.9 GHz UPMIXER AND  
EXCITER AMPLIFIER  
Together with other devices from the MRFIC180X or the MRFIC240X series,  
this GaAs IC family offers the complete transmit and receive functions, less LO  
and filters, needed for a typical 1.8 GHz cordless telephone or 2.4 GHz ISM  
band equipment.  
CASE 948C–03  
(TSSOP–16)  
Usable Frequency Range = 1.7 to 2.5 GHz  
15 dB Typ IF to RF Conversion Gain  
3 dBm Power Output Typ, 0 dBm Minimum at 1 dB Gain Compression  
Simple Off-chip Matching for Maximum Flexibility  
Low Power Consumption = 75 mW (Typ)  
Single Bias Supply = 2.7 to 4.5 Volts  
Low LO Power Requirement = – 5 dBm (Typ)  
Low Cost Surface Mount Plastic Package  
Order MRFIC1813R2 for Tape and Reel.  
R2 Suffix = 2,500 Units per 16 mm, 13 inch Reel.  
Device Marking = M1813  
V
1
2
3
4
5
6
7
TX ENABLE  
16  
15  
14  
13  
DD1  
N/C  
N/C  
IF IN  
N/C  
GND  
GND  
LO IN  
V
12  
11  
10  
9
DD3  
MIXER  
GND  
N/C  
N/C  
GND  
RF OUT  
V
DD2  
8
EXCITER  
Pin Connections and Functional Block Diagram  
REV 2  
Motorola, Inc. 1997  
For More Information On This Product,  
Go to: www.freescale.com  
Freescale Semiconductor, Inc.  
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Ratings  
Supply Voltage  
Symbol  
Limit  
Unit  
Vdc  
dBm  
dBm  
Vdc  
°C  
V
, V  
, V  
5.5  
DD1 DD2 DD3  
IF Input Power  
P
IF  
3
3
LO Input Power  
P
LO  
Enable Voltage  
TX ENABLE  
5.5  
Storage Temperature Range  
Operating Ambient Temperature  
T
stg  
– 65 to +150  
– 30 to +85  
T
A
°C  
RECOMMENDED OPERATING RANGES  
Parameter  
Symbol  
Value  
Unit  
GHz  
GHz  
MHz  
Vdc  
RF Output Frequency  
LO Input Frequency  
f
1.7 to 2.5  
1.5 to 2.4  
70 to 350  
2.7 to 4.5  
RF  
LO  
f
IF Input Frequency  
f
IF  
Supply Voltage  
V
DD  
TX Enable Voltage, ON  
TX Enable Voltage, OFF  
TX ENABLE  
TX ENABLE  
2.7 to V  
Vdc  
DD  
0 to 0.2  
Vdc  
ELECTRICAL CHARACTERISTICS (V  
@ –15 dBm)  
TX ENABLE= 3 V, T = 25°C, f  
= 1.65 GHz @ – 5 dBm, f = 250 MHz  
IF  
DD1,2,3,  
A
LO  
Min  
Typ  
15  
3
Max  
Unit  
dB  
Characteristic  
IF to RF Small Signal Conversion Gain (P  
RF Output 1 dB Gain Compression  
RF Output 3rd Order Intercept  
LO Feedthrough to RF Port  
= –35 dBm)  
12  
0
RF  
dBm  
dBm  
dBm  
dB  
11  
–15  
11  
–10  
Noise Figure  
Lower Sideband Output Power at RF Port  
Supply Current TX Mode  
–10  
25  
100  
3
–6  
dBm  
mA  
A
35  
Supply Current Standby Mode (TX ENABLE = 0 V, LO Off)  
TX Enable Current  
250  
A
V
TX ENABLE  
DD1  
C2  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
C5  
L1  
R1  
IF IN  
C1  
LO IN  
V
DD3  
T2  
MIXER  
C4 C6  
RF OUT  
10  
9
EXCITER  
V
DD2  
T1  
C3  
IF Frequency  
110 MHz  
250 MHz  
L1  
C5  
C1, C2, C3, C4 15 pF  
180 nH 12 pF  
68 nH  
39 nH  
C6  
1 µF  
5.6 pF  
3.9 pF  
R1  
300 Ω  
350 MHz  
T1, T2  
MICROSTRIP, Z = 73 , θ = 29° @ 1.9 GHz  
0
BOARD MATERIAL – GLASS/EPOXY, ε = 4.45,  
DIELECTRIC THICKNESS = 0.018 INCH  
r
Figure 1. Applications Circuit Configuration  
For More Information On This Product,  
Go to: www.freescale.com  
MOTOROLA RF DEVICE DATA  
MRFIC1813  
2
Freescale Semiconductor, Inc.  
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005  
18  
17  
16  
15  
14  
13  
12  
11  
18  
16  
14  
12  
10  
25°C  
V
= 3 Vdc  
DD  
85°C  
4 & 4.5 Vdc  
f
f
P
= 1.9 GHz  
RF  
IF  
T
= –35°C  
A
= 250 MHz  
f
f
= 1.9 GHz  
RF  
= 250 MHz  
= –35 dBm  
= 25°C  
IF  
A
10  
9.0  
8.0  
IF  
IF  
T
8.0  
6.0  
P
= –35 dBm  
–10  
–8.0  
–6.0  
–4.0  
–2.0  
0
–10  
–8.0  
–6.0  
–4.0  
–2.0  
0
P
, LO INPUT POWER (dBm)  
P
LO  
, LO INPUT POWER (dBm)  
LO  
Figure 2. Conversion Gain versus LO Power  
Figure 3. Conversion Gain versus LO Power  
16  
15  
14  
13  
12  
11  
20  
18  
16  
14  
12  
10  
4 Vdc  
V
= 3 Vdc  
250 MHz  
DD  
350 MHz  
IF = 110 MHz  
4.5 Vdc  
f
P
= 1.9 GHz  
= –35 dBm  
RF  
IF  
V
10  
9.0  
P
= –35 dBm  
RF  
= 250 MHz  
f
P
IF  
= 3 Vdc  
DD  
= 25°C  
= –5 dBm  
LO  
= 25°C  
T
8.0  
6.0  
A
8.0  
7.0  
T
A
–10  
–8.0  
–6.0  
–4.0  
–2.0  
0
1700 1800  
1900  
2000  
2100  
2200  
2300  
2400 2500  
P
, LO POWER (dBm)  
f , RF FREQUENCY (MHz)  
RF  
LO  
Figure 4. Conversion Gain versus LO Power  
Figure 5. Conversion Gain versus RF  
Frequency  
18  
16  
16  
15  
14  
13  
12  
11  
IF = 110 MHz  
25°C  
T
= –35°C  
A
14  
12  
10  
250 MHz  
85°C  
10  
9.0  
8.0  
P
P
T
= –35 dBm  
= –5 dBm  
= 25°C  
IF  
LO  
A
f
P
P
= 250 MHz  
= –35 dBm  
= –5 dBm  
IF  
IF  
LO  
350 MHz  
8.0  
6.0  
V
= 3 Vdc  
DD  
7.0  
6.0  
1700 1800  
1900  
2000  
2100  
2200  
2300  
2400  
2500  
1700 1800  
1900  
2000  
2100  
2200  
2300  
2400  
2500  
f
, RF FREQUENCY (MHz)  
f , RF FREQUENCY (GHz)  
RF  
RF  
Figure 6. Conversion Gain versus RF  
Frequency  
Figure 7. Conversion Gain versus RF  
Frequency  
For More Information On This Product,  
Go to: www.freescale.com  
MRFIC1813  
MOTOROLA RF DEVICE DATA  
3
Freescale Semiconductor, Inc.  
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005  
10  
5.0  
0
10  
5.0  
0
4 & 4.5 Vdc  
V
= 3 Vdc  
DD  
–5.0  
–10  
–5.0  
–10  
T
= –35°C  
A
25 & 85°C  
f
f
P
= 1.9 GHz  
f
f
P
= 1.9 GHz  
= 250 MHz  
IF  
RF  
= 250 MHz  
RF  
–15  
–20  
–25  
IF  
= –5 dBm  
= –5 dBm  
LO  
= 25  
LO  
–15  
–20  
T
°C  
V
= 3 Vdc  
A
DD  
–10  
–35  
–30  
–25  
P
–20  
–15  
–10  
–5.0  
0
–35  
–30  
–25  
–20  
–15  
–5.0  
0
0
0
, IF INPUT POWER (dBm)  
P
, IF INPUT POWER (dBm)  
IF  
IF  
Figure 8. RF Output versus Input Power  
Figure 9. RF Output Power versus IF Input  
Power  
10  
5.0  
0
5.0  
0
f
= 110 MHz  
IF  
–5.0  
–10  
350 MHz  
–5.0  
–10  
250 MHz  
IF = 110 MHz  
f
P
= 2.45 GHz  
= –5 dBm  
250 & 350 MHz  
RF  
f
P
= 1.9 GHz  
= –5 dBm  
RF  
LO  
V
–15  
–20  
–25  
LO  
–15  
–20  
–25  
V
= 3 Vdc  
DD  
= 25°C  
= 3 Vdc  
DD  
T
A
T
= 25°C  
A
–35  
–30  
–25  
P
–20  
–15  
–10  
–5.0  
0
–30  
–25  
–20  
P , IF INPUT POWER (dBm)  
IF  
–15  
–10  
–5.0  
, IF INPUT POWER (dBm)  
IF  
Figure 10. RF Output versus IF Input Power  
Figure 11. Output Power versus IF Input  
Power  
29  
28  
27  
26  
25  
24  
23  
22  
26.0  
25.5  
25.0  
24.5  
24.0  
23.5  
4.5 Vdc  
–35°C  
4 Vdc  
V
= 3 Vdc  
DD  
f
f
P
= 1.9 GHz  
f
f
P
= 1.9 GHz  
RF  
IF  
85°C  
RF  
IF  
= 250 MHz  
= –5 dBm  
LO  
= 250 MHz  
= –5 dBm  
23.0  
22.5  
T
= 25  
–20  
°C  
LO  
= 25  
A
21  
20  
V
= 3 Vdc  
T
°C  
DD  
A
–35  
–30  
–25  
–20  
–15  
–10  
–5.0  
0
–35  
–30  
–25  
–15  
–10  
–5.0  
P
, IF INPUT POWER (dBm)  
P
, IF INPUT POWER (dBm)  
IF  
IF  
Figure 12. Supply Current versus IF Input  
Power  
Figure 13. Supply Current versus IF Input  
Power  
For More Information On This Product,  
Go to: www.freescale.com  
MOTOROLA RF DEVICE DATA  
MRFIC1813  
4
Freescale Semiconductor, Inc.  
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005  
24.5  
0
–5.0  
–10  
–15  
–20  
24.0  
23.5  
23.0  
22.5  
22.0  
IF = 110 MHz  
250 MHz  
350 MHz  
250 MHz  
= –5 dBm  
IF = 110 MHz  
P
V
T
LO  
f
P
V
T
= 1.9 GHz  
= –5 dBm  
RF  
LO  
= 3 Vdc  
DD  
= 25  
°C  
A
= 3 Vdc  
DD  
= 25°C  
–25  
–30  
21.5  
21.0  
A
350 MHz  
1300 1400 1500  
–35  
–30  
–25  
P
–20  
–15  
–10  
–5.0  
0
1600  
, LO FREQUENCY (MHz)  
LO  
1700  
1800  
1900  
2000  
2100  
, IF INPUT POWER (dBm)  
F
IF  
Figure 14. Supply Current versus IF Input  
Power  
Figure 15. LO to RF Feedthrough versus LO  
Frequency  
25  
20  
15  
10  
0
–2.0  
–4.0  
–6.0  
–8.0  
–10  
–12  
–14  
–16  
4 & 4.5 Vdc  
f
P
P
= 250 MHz  
IF  
= –15 dBm  
IF  
V
= 3 Vdc  
DD  
V
T
= 3 Vdc  
DD  
= 25°C  
= –5 dBm  
LO  
5.0  
0
A
T
= 25°C  
A
–18  
–20  
1700 1800  
1900  
2000  
2100  
2200  
2300  
2400  
2500  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
f
, RF FREQUENCY (MHz)  
TX EN (VOLTS)  
RF  
Figure 16. Lower Side Band Power versus RF  
Frequency  
Figure 17. Supply Current versus Transmit  
Enable Voltage  
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MRFIC1813  
MOTOROLA RF DEVICE DATA  
5
Freescale Semiconductor, Inc.  
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005  
(1)  
jX  
f
IF Input  
LO Input  
RF Output  
R
(MHz)  
70  
R
jX  
R
jX  
8.3  
7.3  
7.1  
6.6  
6.5  
6.1  
5.7  
–452.4  
–318.5  
–211.3  
–156.4  
–123.1  
–100.7  
–84.2  
100  
150  
200  
250  
300  
350  
1100  
1200  
1300  
1400  
1500  
1600  
1700  
1800  
1900  
2000  
2100  
2200  
2300  
2400  
2500  
62.5  
58.1  
53.7  
50.2  
47.3  
44.4  
42.0  
40.6  
39.6  
38.7  
38.2  
38.4  
38.9  
39.5  
3.1  
4.3  
4.7  
4.2  
3.9  
3.2  
1.6  
30.4  
33.6  
16.9  
2.3  
0.5  
42.6  
49.1  
40.6  
33.8  
33.3  
32.9  
29.6  
27.4  
–0.7  
–2.2  
–3.6  
–5.1  
–6.5  
–7.8  
14.2  
17.7  
15.7  
13.7  
13.2  
11.9  
(1) Includes T1 shown in Figure 1.  
Table 1. Port Impedances versus Frequency  
(V , V , V , TX EN = 3 Vdc)  
D1 D2 D3  
APPLICATIONS INFORMATION  
DESIGN CONSIDERATIONS  
The MRFIC1813 combines a single–balanced MESFET  
mixer with an exciter amplifier. It is usable for transmit fre-  
quencies from 1.7 to 2.5 GHz and IF frequencies from 70 to  
350 MHz. The design is optimized for low–side local oscilla-  
tor injection in hetrodyne transmit applications.  
Minimal off–chip matching is required while allowing for  
flexibility and performance optimization. An active balun is  
employed at the IF port which gives good balance down to at  
least 70 MHz. A passive splitter is used at the LO input to  
complete the single–balanced configuration.  
conversion gain is reduced to about 8 dB. Microstrip induc-  
tors T1 and T2 combine with inductance internal to the de-  
vice to form RF chokes. Some tuning of the RF output can be  
achieved with T1.  
As with all RF devices, circuit layout is important. Con-  
trolled impedance lines should be used for all RF and IF in-  
terconnects. As shown in Figure 1, power supply by–passing  
should be used to avoid device instability. Ground vias  
should be included near all ground connections indicated in  
the schematic. Off–chip components should be mounted as  
close to the IC leads as possible.  
CIRCUIT CONSIDERATIONS  
EVALUATION BOARDS  
Figure 1 shows the application circuit used to gather the  
data presented in the characterization curves. As shown in  
Table 1, the IF port impedance is very high. Three hundred  
ohms was chosen for R1 to shunt the IF port as a compro-  
mise of gain and bandwidth. A 50 resistor can be used and  
L1 and C5 eliminated to provide a broadband match. The  
Evaluation boards are available for RF Monolithic Inte-  
grated Circuits by adding a “TF” to the device type. For a  
complete list of currently available boards and one in devel-  
opment for newly introduced products, please contact your  
local Motorola Distributor or Sales Office.  
For More Information On This Product,  
MOTOROLA RF DEVICE DATA  
MRFIC1813  
6
Go to: www.freescale.com  
Freescale Semiconductor, Inc.  
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005  
PACKAGE DIMENSIONS  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD  
FLASH, PROTRUSIONS OR GATE BURRS. MOLD  
FLASH OR GATE BURRS SHALL NOT EXCEED  
0.15 (0.006) PER SIDE.  
A
-P-  
16x K REF  
M
0.200 (0.008)  
T
16  
9
4. DIMENSION B DOES NOT INCLUDE  
INTERLEAD FLASH OR PROTRUSION.  
INTERLEAD FLASH OR PROTRUSION SHALL NOT  
EXCEED 0.25 (0.010) PER SIDE.  
B
L
5. DIMENSION K DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.08 (0.003) TOTAL  
EXCESS OF THE K DIMENSION AT MAXIMUM  
MATERIAL CONDITION.  
PIN 1  
IDENTIFICATION  
1
8
6. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
7. DIMENSIONS A AND B ARE TO BE  
DETERMINED AT DATUM PLANE –U–.  
MILLIMETERS  
INCHES  
DIM  
A
B
C
D
MIN  
–––  
4.30  
–––  
0.05  
0.45  
MAX  
5.10  
4.50  
1.20  
0.25  
0.55  
MIN  
MAX  
0.200  
0.177  
0047  
0.010  
0.022  
-U-  
–––  
0.169  
–––  
0.002  
0.018  
C
M
0.100 (0.004)  
H
D
G
F
-T-  
SEATING  
PLANE  
G
H
J
J1  
K
K1  
L
0.65 BSC  
0.026 BSC  
0.22  
0.09  
0.09  
0.16  
0.16  
6.30  
0.23  
0.24  
0.18  
0.32  
0.26  
6.50  
0.009  
0.004  
0.004  
0.006  
0.006  
0.248  
0.010  
0.009  
0.007  
0.013  
0.010  
0.256  
A
K
K1  
J1  
J
M
M
0
°
10  
°
0
°
10°  
A
F
SECTION A–A  
CASE 948C–03  
ISSUE B  
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MRFIC1813  
7
MOTOROLA RF DEVICE DATA  
Freescale Semiconductor, Inc.  
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005  
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and  
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola  
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,includingTypicals”  
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of  
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other  
applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury  
ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola  
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees  
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that  
Motorola was negligent regarding the design or manufacture of the part. Motorola and  
Opportunity/Affirmative Action Employer.  
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal  
Mfax is a trademark of Motorola, Inc.  
How to reach us:  
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;  
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JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1,  
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Mfax : RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609  
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MRFIC1813/D  
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相关型号:

MRFIC1813R2

1700 MHz - 2500 MHz RF/MICROWAVE UP CONVERTER, PLASTIC, TSSOP-16
MOTOROLA

MRFIC1813R2

1700MHz - 2500MHz RF/MICROWAVE UP CONVERTER, PLASTIC, TSSOP-16
ROCHESTER

MRFIC1813R2

1700 MHz - 2500 MHz RF/MICROWAVE UP CONVERTER, PLASTIC, CASE 948C-03, TSSOP-16
NXP

MRFIC1814

1.8 GHz LOW NOISE AMPLIFIER AND DOWNMIXER
MOTOROLA

MRFIC1814R2

RF and Baseband Circuit, PDSO16, PLASTIC, TSSOP-16
MOTOROLA

MRFIC1817

1700-1900 MHz MMIC DCS1800/PCS1900 INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT
MOTOROLA

MRFIC1817R2

Narrow Band Medium Power Amplifier, 1710MHz Min, 1900MHz Max, GAAS, PLASTIC, CASE 978-03, PFP, 16 PIN
MOTOROLA

MRFIC1818

1700-1900 MHz MMIC DCS1800/PCS1900 INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT
MOTOROLA

MRFIC1819R2

Narrow Band Medium Power Amplifier, 1700MHz Min, 1900MHz Max, 1 Func, GAAS, PLASTIC, TSSOP-16EP, 16 PIN
MOTOROLA

MRFIC1830DMR2

1800 MHz - 1880 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER, PLASTIC, CASE 846A, MICROPAK-8
MOTOROLA

MRFIC1856R2

824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER, PLASTIC, TSSOP-20EP, 20 PIN
MOTOROLA

MRFIC1859R2

Narrow Band High Power Amplifier, 880MHz Min, 915MHz Max, 2 Func, GAAS, PLASTIC, TQFP-32EP
MOTOROLA