MRFIC1813 [NXP]
IC,UPCONVERTER,GAAS,TSSOP,16PIN,PLASTIC;型号: | MRFIC1813 |
厂家: | NXP |
描述: | IC,UPCONVERTER,GAAS,TSSOP,16PIN,PLASTIC PC 射频 微波 |
文件: | 总8页 (文件大小:331K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Freescale Semiconductor, Inc.
Order this document
by MRFIC1813/D
SEMICONDUCTOR TECHNICAL DATA
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
The MRFIC Line
Designed primarily for use in wireless Personal Communication Systems
(PCS) applications such as Digital European Cordless Telephone (DECT),
Japan’s Personal Handy System (PHS) and the emerging North American
systems. The MRFIC1813 is also applicable to 2.4 GHz ISM equipment. The
device combines a balanced upmixer and a transmit exciter amplifier in a
low-cost TSSOP–16 package. Minimal off-chip matching is required while
allowing for maximum flexibility and efficiency. The mixer is optimized for
low–side injection and provides more than 12 dB of conversion gain with over 0
dBm output at 1 dB gain compression. Image filtering is implemented off-chip to
allow maximum flexibility. A CMOS compatible ENABLE pin allows standby
operation where the current drain is less than 250 A.
1.9 GHz UPMIXER AND
EXCITER AMPLIFIER
Together with other devices from the MRFIC180X or the MRFIC240X series,
this GaAs IC family offers the complete transmit and receive functions, less LO
and filters, needed for a typical 1.8 GHz cordless telephone or 2.4 GHz ISM
band equipment.
CASE 948C–03
(TSSOP–16)
•
•
•
•
•
•
•
•
•
Usable Frequency Range = 1.7 to 2.5 GHz
15 dB Typ IF to RF Conversion Gain
3 dBm Power Output Typ, 0 dBm Minimum at 1 dB Gain Compression
Simple Off-chip Matching for Maximum Flexibility
Low Power Consumption = 75 mW (Typ)
Single Bias Supply = 2.7 to 4.5 Volts
Low LO Power Requirement = – 5 dBm (Typ)
Low Cost Surface Mount Plastic Package
Order MRFIC1813R2 for Tape and Reel.
R2 Suffix = 2,500 Units per 16 mm, 13 inch Reel.
•
Device Marking = M1813
V
1
2
3
4
5
6
7
TX ENABLE
16
15
14
13
DD1
N/C
N/C
IF IN
N/C
GND
GND
LO IN
V
12
11
10
9
DD3
MIXER
GND
N/C
N/C
GND
RF OUT
V
DD2
8
EXCITER
Pin Connections and Functional Block Diagram
REV 2
Motorola, Inc. 1997
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MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Ratings
Supply Voltage
Symbol
Limit
Unit
Vdc
dBm
dBm
Vdc
°C
V
, V
, V
5.5
DD1 DD2 DD3
IF Input Power
P
IF
3
3
LO Input Power
P
LO
Enable Voltage
TX ENABLE
5.5
Storage Temperature Range
Operating Ambient Temperature
T
stg
– 65 to +150
– 30 to +85
T
A
°C
RECOMMENDED OPERATING RANGES
Parameter
Symbol
Value
Unit
GHz
GHz
MHz
Vdc
RF Output Frequency
LO Input Frequency
f
1.7 to 2.5
1.5 to 2.4
70 to 350
2.7 to 4.5
RF
LO
f
IF Input Frequency
f
IF
Supply Voltage
V
DD
TX Enable Voltage, ON
TX Enable Voltage, OFF
TX ENABLE
TX ENABLE
2.7 to V
Vdc
DD
0 to 0.2
Vdc
ELECTRICAL CHARACTERISTICS (V
@ –15 dBm)
TX ENABLE= 3 V, T = 25°C, f
= 1.65 GHz @ – 5 dBm, f = 250 MHz
IF
DD1,2,3,
A
LO
Min
Typ
15
3
Max
—
Unit
dB
Characteristic
IF to RF Small Signal Conversion Gain (P
RF Output 1 dB Gain Compression
RF Output 3rd Order Intercept
LO Feedthrough to RF Port
= –35 dBm)
12
0
RF
—
dBm
dBm
dBm
dB
—
—
—
—
—
—
—
11
—
–15
11
–10
—
Noise Figure
Lower Sideband Output Power at RF Port
Supply Current TX Mode
–10
25
100
3
–6
dBm
mA
A
35
Supply Current Standby Mode (TX ENABLE = 0 V, LO Off)
TX Enable Current
250
—
A
V
TX ENABLE
DD1
C2
1
2
3
4
5
6
7
8
16
15
14
13
12
11
C5
L1
R1
IF IN
C1
LO IN
V
DD3
T2
MIXER
C4 C6
RF OUT
10
9
EXCITER
V
DD2
T1
C3
IF Frequency
110 MHz
250 MHz
L1
C5
C1, C2, C3, C4 15 pF
180 nH 12 pF
68 nH
39 nH
C6
1 µF
5.6 pF
3.9 pF
R1
300 Ω
350 MHz
T1, T2
MICROSTRIP, Z = 73 Ω, θ = 29° @ 1.9 GHz
0
BOARD MATERIAL – GLASS/EPOXY, ε = 4.45,
DIELECTRIC THICKNESS = 0.018 INCH
r
Figure 1. Applications Circuit Configuration
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MOTOROLA RF DEVICE DATA
MRFIC1813
2
Freescale Semiconductor, Inc.
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
18
17
16
15
14
13
12
11
18
16
14
12
10
25°C
V
= 3 Vdc
DD
85°C
4 & 4.5 Vdc
f
f
P
= 1.9 GHz
RF
IF
T
= –35°C
A
= 250 MHz
f
f
= 1.9 GHz
RF
= 250 MHz
= –35 dBm
= 25°C
IF
A
10
9.0
8.0
IF
IF
T
8.0
6.0
P
= –35 dBm
–10
–8.0
–6.0
–4.0
–2.0
0
–10
–8.0
–6.0
–4.0
–2.0
0
P
, LO INPUT POWER (dBm)
P
LO
, LO INPUT POWER (dBm)
LO
Figure 2. Conversion Gain versus LO Power
Figure 3. Conversion Gain versus LO Power
16
15
14
13
12
11
20
18
16
14
12
10
4 Vdc
V
= 3 Vdc
250 MHz
DD
350 MHz
IF = 110 MHz
4.5 Vdc
f
P
= 1.9 GHz
= –35 dBm
RF
IF
V
10
9.0
P
= –35 dBm
RF
= 250 MHz
f
P
IF
= 3 Vdc
DD
= 25°C
= –5 dBm
LO
= 25°C
T
8.0
6.0
A
8.0
7.0
T
A
–10
–8.0
–6.0
–4.0
–2.0
0
1700 1800
1900
2000
2100
2200
2300
2400 2500
P
, LO POWER (dBm)
f , RF FREQUENCY (MHz)
RF
LO
Figure 4. Conversion Gain versus LO Power
Figure 5. Conversion Gain versus RF
Frequency
18
16
16
15
14
13
12
11
IF = 110 MHz
25°C
T
= –35°C
A
14
12
10
250 MHz
85°C
10
9.0
8.0
P
P
T
= –35 dBm
= –5 dBm
= 25°C
IF
LO
A
f
P
P
= 250 MHz
= –35 dBm
= –5 dBm
IF
IF
LO
350 MHz
8.0
6.0
V
= 3 Vdc
DD
7.0
6.0
1700 1800
1900
2000
2100
2200
2300
2400
2500
1700 1800
1900
2000
2100
2200
2300
2400
2500
f
, RF FREQUENCY (MHz)
f , RF FREQUENCY (GHz)
RF
RF
Figure 6. Conversion Gain versus RF
Frequency
Figure 7. Conversion Gain versus RF
Frequency
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MRFIC1813
MOTOROLA RF DEVICE DATA
3
Freescale Semiconductor, Inc.
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
10
5.0
0
10
5.0
0
4 & 4.5 Vdc
V
= 3 Vdc
DD
–5.0
–10
–5.0
–10
T
= –35°C
A
25 & 85°C
f
f
P
= 1.9 GHz
f
f
P
= 1.9 GHz
= 250 MHz
IF
RF
= 250 MHz
RF
–15
–20
–25
IF
= –5 dBm
= –5 dBm
LO
= 25
LO
–15
–20
T
°C
V
= 3 Vdc
A
DD
–10
–35
–30
–25
P
–20
–15
–10
–5.0
0
–35
–30
–25
–20
–15
–5.0
0
0
0
, IF INPUT POWER (dBm)
P
, IF INPUT POWER (dBm)
IF
IF
Figure 8. RF Output versus Input Power
Figure 9. RF Output Power versus IF Input
Power
10
5.0
0
5.0
0
f
= 110 MHz
IF
–5.0
–10
350 MHz
–5.0
–10
250 MHz
IF = 110 MHz
f
P
= 2.45 GHz
= –5 dBm
250 & 350 MHz
RF
f
P
= 1.9 GHz
= –5 dBm
RF
LO
V
–15
–20
–25
LO
–15
–20
–25
V
= 3 Vdc
DD
= 25°C
= 3 Vdc
DD
T
A
T
= 25°C
A
–35
–30
–25
P
–20
–15
–10
–5.0
0
–30
–25
–20
P , IF INPUT POWER (dBm)
IF
–15
–10
–5.0
, IF INPUT POWER (dBm)
IF
Figure 10. RF Output versus IF Input Power
Figure 11. Output Power versus IF Input
Power
29
28
27
26
25
24
23
22
26.0
25.5
25.0
24.5
24.0
23.5
4.5 Vdc
–35°C
4 Vdc
V
= 3 Vdc
DD
f
f
P
= 1.9 GHz
f
f
P
= 1.9 GHz
RF
IF
85°C
RF
IF
= 250 MHz
= –5 dBm
LO
= 250 MHz
= –5 dBm
23.0
22.5
T
= 25
–20
°C
LO
= 25
A
21
20
V
= 3 Vdc
T
°C
DD
A
–35
–30
–25
–20
–15
–10
–5.0
0
–35
–30
–25
–15
–10
–5.0
P
, IF INPUT POWER (dBm)
P
, IF INPUT POWER (dBm)
IF
IF
Figure 12. Supply Current versus IF Input
Power
Figure 13. Supply Current versus IF Input
Power
For More Information On This Product,
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MOTOROLA RF DEVICE DATA
MRFIC1813
4
Freescale Semiconductor, Inc.
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
24.5
0
–5.0
–10
–15
–20
24.0
23.5
23.0
22.5
22.0
IF = 110 MHz
250 MHz
350 MHz
250 MHz
= –5 dBm
IF = 110 MHz
P
V
T
LO
f
P
V
T
= 1.9 GHz
= –5 dBm
RF
LO
= 3 Vdc
DD
= 25
°C
A
= 3 Vdc
DD
= 25°C
–25
–30
21.5
21.0
A
350 MHz
1300 1400 1500
–35
–30
–25
P
–20
–15
–10
–5.0
0
1600
, LO FREQUENCY (MHz)
LO
1700
1800
1900
2000
2100
, IF INPUT POWER (dBm)
F
IF
Figure 14. Supply Current versus IF Input
Power
Figure 15. LO to RF Feedthrough versus LO
Frequency
25
20
15
10
0
–2.0
–4.0
–6.0
–8.0
–10
–12
–14
–16
4 & 4.5 Vdc
f
P
P
= 250 MHz
IF
= –15 dBm
IF
V
= 3 Vdc
DD
V
T
= 3 Vdc
DD
= 25°C
= –5 dBm
LO
5.0
0
A
T
= 25°C
A
–18
–20
1700 1800
1900
2000
2100
2200
2300
2400
2500
0
0.5
1.0
1.5
2.0
2.5
3.0
f
, RF FREQUENCY (MHz)
TX EN (VOLTS)
RF
Figure 16. Lower Side Band Power versus RF
Frequency
Figure 17. Supply Current versus Transmit
Enable Voltage
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MRFIC1813
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc.
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
(1)
jX
f
IF Input
LO Input
RF Output
R
(MHz)
70
R
jX
R
jX
8.3
7.3
7.1
6.6
6.5
6.1
5.7
–452.4
–318.5
–211.3
–156.4
–123.1
–100.7
–84.2
100
150
200
250
300
350
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
62.5
58.1
53.7
50.2
47.3
44.4
42.0
40.6
39.6
38.7
38.2
38.4
38.9
39.5
3.1
4.3
4.7
4.2
3.9
3.2
1.6
30.4
33.6
16.9
2.3
0.5
42.6
49.1
40.6
33.8
33.3
32.9
29.6
27.4
–0.7
–2.2
–3.6
–5.1
–6.5
–7.8
14.2
17.7
15.7
13.7
13.2
11.9
(1) Includes T1 shown in Figure 1.
Table 1. Port Impedances versus Frequency
(V , V , V , TX EN = 3 Vdc)
D1 D2 D3
APPLICATIONS INFORMATION
DESIGN CONSIDERATIONS
The MRFIC1813 combines a single–balanced MESFET
mixer with an exciter amplifier. It is usable for transmit fre-
quencies from 1.7 to 2.5 GHz and IF frequencies from 70 to
350 MHz. The design is optimized for low–side local oscilla-
tor injection in hetrodyne transmit applications.
Minimal off–chip matching is required while allowing for
flexibility and performance optimization. An active balun is
employed at the IF port which gives good balance down to at
least 70 MHz. A passive splitter is used at the LO input to
complete the single–balanced configuration.
conversion gain is reduced to about 8 dB. Microstrip induc-
tors T1 and T2 combine with inductance internal to the de-
vice to form RF chokes. Some tuning of the RF output can be
achieved with T1.
As with all RF devices, circuit layout is important. Con-
trolled impedance lines should be used for all RF and IF in-
terconnects. As shown in Figure 1, power supply by–passing
should be used to avoid device instability. Ground vias
should be included near all ground connections indicated in
the schematic. Off–chip components should be mounted as
close to the IC leads as possible.
CIRCUIT CONSIDERATIONS
EVALUATION BOARDS
Figure 1 shows the application circuit used to gather the
data presented in the characterization curves. As shown in
Table 1, the IF port impedance is very high. Three hundred
ohms was chosen for R1 to shunt the IF port as a compro-
mise of gain and bandwidth. A 50 Ω resistor can be used and
L1 and C5 eliminated to provide a broadband match. The
Evaluation boards are available for RF Monolithic Inte-
grated Circuits by adding a “TF” to the device type. For a
complete list of currently available boards and one in devel-
opment for newly introduced products, please contact your
local Motorola Distributor or Sales Office.
For More Information On This Product,
MOTOROLA RF DEVICE DATA
MRFIC1813
6
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PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS. MOLD
FLASH OR GATE BURRS SHALL NOT EXCEED
0.15 (0.006) PER SIDE.
A
-P-
16x K REF
M
0.200 (0.008)
T
16
9
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT
EXCEED 0.25 (0.010) PER SIDE.
B
L
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL
EXCESS OF THE K DIMENSION AT MAXIMUM
MATERIAL CONDITION.
PIN 1
IDENTIFICATION
1
8
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSIONS A AND B ARE TO BE
DETERMINED AT DATUM PLANE –U–.
MILLIMETERS
INCHES
DIM
A
B
C
D
MIN
–––
4.30
–––
0.05
0.45
MAX
5.10
4.50
1.20
0.25
0.55
MIN
MAX
0.200
0.177
0047
0.010
0.022
-U-
–––
0.169
–––
0.002
0.018
C
M
0.100 (0.004)
H
D
G
F
-T-
SEATING
PLANE
G
H
J
J1
K
K1
L
0.65 BSC
0.026 BSC
0.22
0.09
0.09
0.16
0.16
6.30
0.23
0.24
0.18
0.32
0.26
6.50
0.009
0.004
0.004
0.006
0.006
0.248
0.010
0.009
0.007
0.013
0.010
0.256
A
K
K1
J1
J
M
M
0
°
10
°
0
°
10°
A
F
SECTION A–A
CASE 948C–03
ISSUE B
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MRFIC1813
7
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
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and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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Opportunity/Affirmative Action Employer.
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
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