MX25L1655DM21-12G [Macronix]
Flash, 4MX4, PDSO8, 0.200 INCH, ROHS COMPLIANT, SOP-8;
| 型号： | MX25L1655DM21-12G |
| 厂家： | 
MACRONIX INTERNATIONAL |
| 描述： | Flash, 4MX4, PDSO8, 0.200 INCH, ROHS COMPLIANT, SOP-8 光电二极管 内存集成电路 |
| 文件： | 总49页 (文件大小：2160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MX25L1655D
MX25L1655D
SECURITY SERIAL
FLASH SPECIFICATION
P/N: PM1430
REV. 1.2, MAR. 11, 2009
1
MX25L1655D
Contents
FEATURES ................................................................................................................................................. 5
GENERAL DESCRIPTION ........................................................................................................................ 7
Table 1. Additional Feature Comparison...................................................................................................................7
PIN CONFIGURATIONS ............................................................................................................................ 8
PIN DESCRIPTION..................................................................................................................................... 8
BLOCK DIAGRAM...................................................................................................................................... 9
DATA PROTECTION................................................................................................................................. 10
Table 2. 512-bit Secured OTP Definition ................................................................................................................ 11
Memory Organization.............................................................................................................................. 12
Table 3. Memory Organization...............................................................................................................................12
DEVICE OPERATION............................................................................................................................... 13
Figure 1. Serial Modes Supported..........................................................................................................................13
COMMAND DESCRIPTION...................................................................................................................... 14
Table 4. Command Set ...........................................................................................................................................14
(1) Write Enable (WREN) .......................................................................................................................................16
(2) Write Disable (WRDI)........................................................................................................................................16
(3) Read Identification (RDID) ................................................................................................................................16
(4) Read Status Register (RDSR)...........................................................................................................................16
(5) Block Write Lock Protection (BLOCKP) ............................................................................................................17
(6) Read Block Write Lock status (RDBLOCK).......................................................................................................17
(7) Chip Unprotect (UNLOCK)................................................................................................................................18
(8) Read Data Bytes (READ)..................................................................................................................................18
(9) Read Data Bytes at Higher Speed (FAST_READ)............................................................................................18
(10) 2 x I/O Read Mode (2READ)...........................................................................................................................18
(11) 4 x I/O Read Mode (4READ)...........................................................................................................................19
(12) Sector Erase (SE) ...........................................................................................................................................19
(13) Block Erase (BE).............................................................................................................................................19
(14) Chip Erase (CE) ..............................................................................................................................................20
(15) Page Program (PP).........................................................................................................................................20
(16) 4 x I/O Page Program (4PP) ...........................................................................................................................20
(17) Continuously program mode (CP mode).........................................................................................................21
(18) Deep Power-down (DP) ..................................................................................................................................21
(19) Release from Deep Power-down (RDP), Read Electronic Signature (RES)................................................... 22
(20) Read Electronic Manufacturer ID & Device ID (REMS), (REMS2), (REMS4)................................................. 22
Table 5. ID Definitions ............................................................................................................................................23
(21) Enter Secured OTP (ENSO) ...........................................................................................................................23
(22) Exit Secured OTP (EXSO) ..............................................................................................................................23
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MX25L1655D
(23) Read Security Register (RDSCUR).................................................................................................................23
Table 6. Security Register Definition.......................................................................................................................24
(24) Write Security Register (WRSCUR)................................................................................................................24
POWER-ON STATE.................................................................................................................................. 25
ELECTRICAL SPECIFICATIONS............................................................................................................. 26
ABSOLUTE MAXIMUM RATINGS .........................................................................................................................26
Figure 2.Maximum Negative Overshoot Waveform................................................................................................26
CAPACITANCE TA = 25°C, f = 1.0 MHz.................................................................................................................26
Figure 3. Maximum Positive Overshoot Waveform.................................................................................................26
Figure 4. INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL.................................................................. 27
Figure 5. OUTPUT LOADING................................................................................................................................27
Table 7. DC CHARACTERISTICS (Temperature = -40°C to 85°C for Industrial grade, VCC = 2.7V ~ 3.6V) ....... 28
Table 8. AC CHARACTERISTICS (Temperature = -40°C to 85°C for Industrial grade, VCC = 2.7V ~ 3.6V) ....... 29
Timing Analysis....................................................................................................................................... 30
Figure 6. Serial Input Timing...................................................................................................................................30
Figure 7. Output Timing ..........................................................................................................................................30
Figure 8. WP# Setup Timing and Hold Timing .......................................................................................................31
Figure 9. Write Enable (WREN) Sequence (Command 06) ...................................................................................31
Figure 10. Write Disable (WRDI) Sequence (Command 04)..................................................................................31
Figure 11. Read Identification (RDID) Sequence (Command 9F) .......................................................................... 32
Figure 12. Read Status Register (RDSR) Sequence (Command 05)..................................................................... 32
Figure 13. Block Write Lock Protection (BLOCKP) Sequence (Command E2)..................................................... 32
Figure 14. Chip Unprotect (UNLOCK) Sequence (Command F3)......................................................................... 33
Figure 15. Read Data Bytes (READ) Sequence (Command 03)........................................................................... 33
Figure 16. Read Block Protection Lock Status (RDBLOCK) Sequence (Command FB)....................................... 33
Figure 17. Read at Higher Speed (FAST_READ) Sequence (Command 0B)....................................................... 34
Figure 18. 2 x I/O Read Mode Sequence (Command BB) .....................................................................................35
Figure 19. 4 x I/O Read Mode Sequence (Command EB) .....................................................................................35
Figure 20. 4 x I/O Read enhance performance Mode Sequence (Command EB) ................................................. 36
Figure 21. Page Program (PP) Sequence (Command 02)....................................................................................37
Figure 22. 4 x I/O Page Program (4PP) Sequence (Command 38) ...................................................................... 37
Figure 23. Continously Program (CP) Mode Sequence with Hardware Detection (Command AD) ....................... 38
Figure 24. Sector Erase (SE) Sequence (Command 20) ......................................................................................38
Figure 25. Block Erase (BE) Sequence (Command D8) .......................................................................................38
Figure 26. Chip Erase (CE) Sequence (Command 60 or C7) ...............................................................................39
Figure 27. Deep Power-down (DP) Sequence (Command B9)............................................................................. 39
Figure 28. Release from Deep Power-down and Read Electronic Signature (RES) Sequence (Command AB) .. 39
Figure 29. Release from Deep Power-down (RDP) Sequence (Command AB).................................................... 40
Figure 30. Read Electronic Manufacturer & Device ID (REMS) Sequence (Command 90 or EF or DF) .............. 40
Figure 31. Power-up Timing....................................................................................................................................41
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MX25L1655D
Table 11. Power-Up Timing and VWI Threshold.....................................................................................................41
INITIAL DELIVERY STATE.....................................................................................................................................41
RECOMMENDED OPERATING CONDITIONS........................................................................................ 42
ERASE AND PROGRAMMING PERFORMANCE................................................................................... 43
LATCH-UP CHARACTERISTICS............................................................................................................. 43
ORDERING INFORMATION..................................................................................................................... 44
PART NAME DESCRIPTION.................................................................................................................... 45
PACKAGE INFORMATION....................................................................................................................... 46
REVISION HISTORY ................................................................................................................................ 48
P/N: PM1430
REV. 1.2, MAR. 11, 2009
4
MX25L1655D
16M-BIT [x 1/x 2/x4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
FEATURES
GENERAL
•
Serial Peripheral Interface compatible -- Mode 0 and Mode 3
•
16M:16,777,216 x 1 bit structure or 8,388,608 x 2 bits (two I/O read mode) structure or 4,194,304 x 4 bits (four
I/O read mode) structure
•
•
•
•
512 Equal Sectors with 4K byte each
- Any Sector can be erased individually
32 Equal Blocks with 64K byte each
- Any Block can be erased individually
Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
Latch-up protected to 100mA from -1V to Vcc +1V
PERFORMANCE
•
High Performance
- Read
- 1 I/O: 86/104MHz with 8 dummy cycles
- 4 I/O: 75MHz with 6 dummy cycles
- 2 I/O: 75MHz with 4 dummy cycles
- Fast access time: 86/104MHz serial clock (15pF + 1TTL Load) and 66MHz serial clock (30pF + 1TTL Load)
- Serial clock of four I/O read mode : 75MHz (15pF + TTL Load), which is equivalent to 300MHz
- Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page)
- Byte program time: 9us (typical)
- Continuously program mode (automatically increase address under word program mode)
- Fast erase time: 60ms (typ.)/sector (4K-byte per sector) ; 0.7s(typ.) /block (64K-byte per block); 14s(typ.) /chip
Low Power Consumption
•
- Low active read current: 25mA(max.) at 86/104MHz, 20mA(max.) at 66MHz and 10mA(max.) at 33MHz
- Low active programming current: 20mA (max.)
- Low active erase current: 20mA (max.)
- Low standby current: 20uA (max.)
•
•
Typical 100,000 erase/program cycles
20 years data retention
SOFTWARE FEATURES
•
Input Data Format
- 1-byte Command code
•
Advanced Security Features
- Block Write Lock protection
- Additional 512-bit secured OTP for unique identifier
- Permanent lock
- Read protection function
•
Auto Erase and Auto Program Algorithm
Automatically erases and verifies data at selected sector
Automatically programs and verifies data at selected page by an internal algorithm that automatically times the
program pulse widths (Any page to be programed should have page in the erased state first)
-
-
P/N: PM1430
REV. 1.2, MAR. 11, 2009
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MX25L1655D
•
•
Status Register Feature
Electronic Identification
JEDEC 1-byte manufacturer ID and 2-byte device ID
- RES command for 1-byte Device ID
-
- Both REMS,REMS2 and REMS4 commands for 1-byte manufacturer ID and 1-byte device ID
HARDWARE FEATURES
•
•
•
•
•
•
SCLK Input
Serial clock input
SI/SIO0
-
Serial Data Input or Serial Data Input/Output for 2 x I/O read mode and 4 x I/O read mode
SO/SIO1
-
Serial Data Output or Serial Data Input/Output for 2 x I/O read mode and 4 x I/O read mode
WP#/SIO2
-
Hardware write protection or serial data Input/Output for 4 x I/O read mode
NC/SIO3
-
NC pin or serial data Input/Output for 4 x I/O read mode
PACKAGE
-
8-pin SOP (200mil)
- 24-ball BGA *
-
- All Pb-free devices are RoHS Compliant
Please contact Macronix sales for specific information regarding this Advanced Security Features
*Advanced Information
P/N: PM1430
REV. 1.2, MAR. 11, 2009
6
MX25L1655D
GENERAL DESCRIPTION
The MX25L1655D are 16,777,216 bit serial Flash memory, which is configured as 2,097,152 x 8 internally. When it
is in two or four I/O read mode, the structure becomes 8,388,608 bits x 2 or 4,194,304 bits x 4. The MX25L1655D
feature a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus. The three bus
signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial access to the device
is enabled by CS# input.
When it is in two I/O read mode, the SI pin and SO pin become SIO0 pin and SIO1 pin for address/dummy bits in-
put and data output. When it is in four I/O read mode, the SI pin, SO pin, WP# pin and NC pin become SIO0 pin,
SIO1 pin, SIO2 pin and SIO3 pin for address/dummy bits input and data output.
The MX25L1655D provides sequential read operation on whole chip.
After program/erase command is issued, auto program/ erase algorithms which program/ erase and verify the
specified page or sector/block locations will be executed. Program command is executed on byte basis, or page (256
bytes) basis, or word basis for Continuously program mode, and erase command is executes on sector (4K-byte),
or block (64K-byte), or whole chip basis.
To provide user with ease of interface, a status register is included to indicate the status of the chip. The status read
command can be issued to detect completion status of a program or erase operation via WIP bit.
Advanced security features enhance the protection and security functions, please contact Macronix sales for more
details.
When the device is not in operation and CS# is high, it is put in standby mode and draws less than 20uA DC cur-
rent.
The MX25L1655D utilizes Macronix's proprietary memory cell, which reliably stores memory contents even after
100,000 program and erase cycles.
Table 1. Additional Feature Comparison
Read
Performance
Protection and Security
Identifier
Additional
Features
WP#
Each Flexible
2 I/O
Read
(75
4 I/O
Read
(75
REMS/2/4
(command:
90/EF/0F
hex)
512-bit Hard- Read
secured ware Protec-
RES
(command:
90 hex)
RDID
(command:
9F hex)
Perman- Block
Block
Part
ent Lock Protec- Protec-
Name
OTP
Protec-
tion
tion
tion
tion
MHz)
MHz)
C2 26 15
(hex)
C2 24 15
(hex)
MX25L1655D
MX25L1635D
V
V
V
V
V
V
V
V
V
V
V
26 (hex) C2 26 (hex)
24 (hex) C2 24 (hex)
V
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REV. 1.2, MAR. 11, 2009
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MX25L1655D
PIN CONFIGURATIONS
8-PIN SOP (200mil)
PIN DESCRIPTION
SYMBOL
DESCRIPTION
CS#
Chip Select
Serial Data Input (for 1xI/O)/ Serial Data
SI/SIO0 Input & Output (for 2xI/O or 4xI/O read
mode)
Serial Data Output (for 1xI/O)/Serial
SO/SIO1 Data Input & Output (for 2xI/O or 4xI/O
read mode)
1
2
3
4
CS#
SO/SIO1
WP#/SIO2
GND
VCC
8
7
6
5
NC/SIO3
SCLK
SI/SIO0
SCLK
Clock Input
Write protection: connect to GND or
WP#/SIO2 Serial Data Input & Output (for 4xI/O
read mode)
NC pin (Not connect) or Serial Data
Input & Output (for 4xI/O mode)
NC/SIO3
VCC
GND
+ 3.3V Power Supply
Ground
Please contact Macronix sales for specific information regarding 24-ball TFBGA (6x8 mm) package pin con-
figuration.
P/N: PM1430
REV. 1.2, MAR. 11, 2009
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MX25L1655D
BLOCK DIAGRAM
Address
Generator
Memory Array
Page Buffer
Data
Register
SI/SIO0
Y-Decoder
SRAM
Buffer
Sense
Amplifier
CS#
WP#/SIO2
NC/SIO3
Mode
Logic
State
Machine
HV
Generator
SCLK
Clock Generator
Output
Buffer
SO/SIO1
P/N: PM1430
REV. 1.2, MAR. 11, 2009
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MX25L1655D
DATA PROTECTION
The MX25L1655D is designed to offer protection against accidental erasure or programming caused by spurious
system level signals that may exist during power transition. During power up the device automatically resets the
state machine in the standby mode. In addition, with its control register architecture, alteration of the memory con-
tents only occurs after successful completion of specific command sequences. The device also incorporates sev-
eral features to prevent inadvertent write cycles resulting from VCC power-up and power-down transition or system
noise.
• Valid command length checking: The command length will be checked whether it is at byte base and completed
on byte boundary.
• Write Enable (WREN) command: WREN command is required to set the Write Enable Latch bit (WEL) before
other command to change data. The WEL bit will return to reset stage under following situation:
- Power-up
- Write Disable (WRDI) command completion
- Page Program (PP) command completion
- Continuously Program mode (CP) instruction completion
- Sector Erase (SE) command completion
- Block Erase (BE) command completion
- Chip Erase (CE) command completion
•
•
Deep Power Down Mode: By entering deep power down mode, the flash device also is under protected from
writing all commands except Release from deep power down mode command (RDP) and Read Electronic Sig-
nature command (RES).
Advanced Security Features: there are some protection and securuity features which protect content from inad-
vertent write and hostile access.
I. Block Write Lock protection
- The Software Protected Mode (SPM) use A23-A16 address bits to allow a block (64K Byte) of memory to be
protected as read only through the Block Write Lock protection command (BLOCKP). This feature allows user to
unprotect the entice chip through the chip unprotect command (UNLOCK).
- The Hardware Protected Mode (HPM) use WP#/SIO2 to protect the Block.
If WP#/SIO2=VIL (input Low), all blocks of memory to be protected as read only.
If WP#/SIO2=VIH (input High), all blocks depends on whether they were last Lock or Unlock. If the system goes
into four I/O read mode, the feature of HPM will be disabled.
P/N: PM1430
REV. 1.2, MAR. 11, 2009
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MX25L1655D
II. Additional 512-bit secured OTP for unique identifier: to provide 512-bit one-time program area for setting de-
vice unique serial number - Which may be set by factory or system customer. Please refer to table 2. 512-bit
secured OTP definition.
- Security register bit 0 indicates whether the chip is locked by factory or not.
- To program the 512-bit secured OTP by entering 512-bit secured OTP mode (with ENSO command), and go-
ing through normal program procedure, and then exiting 512-bit secured OTP mode by writing EXSO command.
- Customer may lock-down the customer lockable secured OTP by writing WRSCUR(write security register)
command to set customer lock-down bit1 as "1". Please refer to table of "security register definition" for security
register bit definition and table of "512-bit secured OTP definition" for address range definition.
- Note: Once lock-down whatever by factory or customer, it cannot be changed any more. While in 512-bit se-
cured OTP mode, array access is not allowed.
Table 2. 512-bit Secured OTP Definition
Address range
xxxx00~xxxx0F
xxxx10~xxxx3F
Size
Standard Factory Lock
ESN (electrical serial number)
N/A
Customer Lock
128-bit
384-bit
Determined by customer
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MX25L1655D
Memory Organization
Table 3. Memory Organization
Block
Sector
511
:
Address Range
1FF000h 1FFFFFh
Block
Sector
239
:
Address Range
0EF000h 0EFFFFh
31
:
:
14
:
:
496
495
:
480
479
:
464
463
:
448
447
:
432
431
:
416
415
:
400
399
:
384
383
:
368
367
:
352
351
:
336
335
:
320
319
:
304
303
:
288
287
:
272
271
:
256
255
:
1F0000h
1EF000h
:
1E0000h
1DF000h
:
1D0000h
1CF000h
:
1C0000h
1BF000h
:
1B0000h
1AF000h
:
1A0000h
19F000h
:
190000h
18F000h
:
180000h
17F000h
:
170000h
16F000h
:
160000h
15F000h
:
150000h
14F000h
:
140000h
13F000h
:
130000h
12F000h
:
120000h
11F000h
:
110000h
10F000h
:
100000h
0FF000h
:
1F0FFFh
1EFFFFh
:
1E0FFFh
1DFFFFh
:
1D0FFFh
1CFFFFh
:
1C0FFFh
1BFFFFh
:
1B0FFFh
1AFFFFh
:
1A0FFFh
19FFFFh
:
190FFFh
18FFFFh
:
180FFFh
17FFFFh
:
170FFFh
16FFFFh
:
160FFFh
15FFFFh
:
150FFFh
14FFFFh
:
140FFFh
13FFFFh
:
130FFFh
12FFFFh
:
120FFFh
11FFFFh
:
110FFFh
10FFFFh
:
100FFFh
0FFFFFh
:
224
223
:
208
207
:
192
191
:
176
175
:
160
159
:
144
143
:
128
127
:
112
111
:
96
95
:
80
79
:
64
63
:
48
47
:
32
31
:
16
15
:
0E0000h
0DF000h
:
0D0000h
0CF000h
:
0C0000h
0BF000h
:
0B0000h
0AF000h
:
0A0000h
09F000h
:
090000h
08F000h
:
080000h
07F000h
:
070000h
06F000h
:
060000h
05F000h
:
050000h
04F000h
:
040000h
03F000h
:
030000h
02F000h
:
020000h
01F000h
:
010000h
00F000h
:
003000h
002000h
001000h
000000h
0E0FFFh
0DFFFFh
:
0D0FFFh
0CFFFFh
:
0C0FFFh
0BFFFFh
:
0B0FFFh
0AFFFFh
:
0A0FFFh
09FFFFh
:
090FFFh
08FFFFh
:
080FFFh
07FFFFh
:
070FFFh
06FFFFh
:
060FFFh
05FFFFh
:
050FFFh
04FFFFh
:
040FFFh
03FFFFh
:
030FFFh
02FFFFh
:
020FFFh
01FFFFh
:
010FFFh
00FFFFh
:
003FFFh
002FFFh
001FFFh
000FFFh
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
13
12
11
10
9
8
7
6
5
4
3
2
1
3
2
1
0
0
240
0F0000h
0F0FFFh
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MX25L1655D
DEVICE OPERATION
1. Before a command is issued, status register should be checked to ensure device is ready for the intended op-
eration.
2. When incorrect command is inputted to this LSI, this LSI becomes standby mode and keeps the standby mode
until next CS# falling edge. In standby mode, SO pin of this LSI should be High-Z.
3. When correct command is inputted to this LSI, this LSI becomes active mode and keeps the active mode until
next CS# rising edge.
4. Input data is latched on the rising edge of Serial Clock(SCLK) and data shifts out on the falling edge of SCLK.
The difference of Serial mode 0 and mode 3 is shown as Figure 1.
5. For the following instructions: RDID, RDSR, RDSCUR, READ, FAST_READ, 2READ, 4READ, RDBLOCK,
RDPLOCK, RES, REMS, REMS2 and REMS4 the shifted-in instruction sequence is followed by a data-out
sequence. After any bit of data being shifted out, the CS# can be high. For the following instructions: WREN,
WRDI, SE, BE, CE, PP, 4PP, CP, RDP, DP, BLOCKP, UNLOCK, ENSO, and EXSO, the CS# must go high ex-
actly at the byte boundary; otherwise, the instruction will be rejected and not executed.
6. During the progress of Write Status Register, Program, Erase operation, to access the memory array is neglect-
ed and not affect the current operation of Write Status Register, Program, Erase.
Figure 1. Serial Modes Supported
CPOL CPHA
shift in
shift out
SCLK
SCLK
(Serial mode 0)
(Serial mode 3)
0
1
0
1
SI
MSB
SO
MSB
Note:
CPOL indicates clock polarity of Serial master, CPOL=1 for SCLK high while idle, CPOL=0 for SCLK low while not
transmitting. CPHA indicates clock phase. The combination of CPOL bit and CPHA bit decides which Serial mode is
supported.
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MX25L1655D
COMMAND DESCRIPTION
Table 4. Command Set
BLOCKP
(Block
Write Lock
protection)
E2 (hex)
RDBLOCK
UNLOCK
RDSR
(read status
register)
COMMAND WREN (write WRDI (write RDID (read
(read Block
Write Lock
status)
READ (read
data)
(chip
unprotect)
(byte)
enable)
disable)
identification)
1st byte
2nd byte
06 (hex)
04 (hex)
9F (hex)
05 (hex)
FB (hex)
F3 (hex)
03 (hex)
AD1
(A23-A16)
AD2
(A15-A8)
AD3
AD1
AD2
AD1
AD2
3rd byte
4th byte
Action
AD3
AD3
read
(A7-A0)
sets the
resets the outputs JEDEC to read out
assign a
reset Block n bytes read
Write Lock out until CS#
(WEL) write (WEL) write
ID: 1-byte
the values block (64KB) assigned
enable latch enable latch Manufacturer of the status
to lock
protection
Block Write protection bit goes high
Lock status whole chip
bit
bit
ID & 2-byte
Device ID
register
2READ (2
x I/O read
command)
Note1
Release
Read
Enhanced
FAST READ
(fast read
data)
4READ (4
x I/O read
command)
4PP (quad
page
program)
COMMAND
(byte)
SE (sector
erase)
BE (block
erase)
CE (chip
erase)
1st byte
2nd byte
0B (hex)
AD1
BB (hex)
EB (hex)
ADD(4) &
Dummy(4)
FFh (hex)
x
38 (hex)
AD1
20 (hex)
AD1
D8 (hex) 60 or C7 (hex)
AD1
ADD(2)
ADD(2) &
Dummy(2)
3rd byte
AD2
Dummy(4)
x
x
AD2
AD3
AD2
AD3
4th byte
5th byte
AD3
Dummy
n bytes read n bytes read n bytes read
All these
quad input to erase the to erase the
to erase
out until CS# out by 2 x I/ out by 4 x I/ commands to program
goes high O until CS# O until CS# FFh,00h,AAh the selected
selected
sector
selected
block
whole chip
goes high
goes high
or 55h will
escape the
performance
enhance
page
Action
mode
CP
PP (Page (Continuously DP (Deep
RDP
(Release
REMS (read
electronic
REMS4 (read
ID for 4x I/O
mode)
REMS2 (read
ID for 2x I/O
mode)
COMMAND
(byte)
RES (read
program)
program
mode)
AD (hex)
AD1
power down) from deep electronic ID) manufacturer
power down)
AB (hex)
& device ID)
90 (hex)
1st byte
2nd byte
3rd byte
4th byte
02 (hex)
AD1
B9 (hex)
AB (hex)
EF (hex)
DF (hex)
x
x
x
x
x
x
x
x
x
AD2
AD2
AD3
AD3
ADD (Note 2) ADD (Note 2) ADD (Note 2)
output the output the output the
power down deep power 1-byte Device Manufacturer Manufacturer Manufact-
to program continously enters deep release from to read out
the selected
page
program
whole chip,
the address is
automatically
increase
mode
down mode
ID
ID & Device ID & Device
ID ID
urer ID &
device ID
Action
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ENSO (enter EXSO (exit
RDSCUR
WRSCUR
(write
security
register)
2F (hex)
ESRY
DSRY
COMMAND
(byte)
secured
OTP)
secured (read security
OTP)
(enable SO (disable SO
to output RY/ to output RY/
BY#)
70 (hex)
register)
2B (hex)
BY#)
80 (hex)
1st byte
2nd byte
3rd byte
4th byte
B1 (hex)
C1 (hex)
to enter
the 512-bit
Secured OTP Secured
mode OTP mode
to exit the to read value to set the to enable SO to disable SO
512-bit of security lock-down bit to output RY/ to output RY/
register as "1" (once BY# during BY# during
Action
lock-down,
cannot be
updated)
CP mode
CP mode
Note 1: The count base is 4-bit for ADD(2) and Dummy(2) because of 2 x I/O. And the MSB is on SI/SIO1 which is different from
1 x I/O condition.
Note 2: ADD=00H will output the manufacturer ID first and ADD=01H will output device ID first.
Note 3: It is not allowed to adopt any other code which is not in the above command definition table.
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(1) Write Enable (WREN)
The Write Enable (WREN) instruction is for setting Write Enable Latch (WEL) bit. For those instructions like PP, 4PP,
BLOCKP, PLOCK, UNLOCK, CP, SE, BE, and CE which are intended to change the device content, should be set
every time after the WREN instruction setting the WEL bit.
The sequence of issuing WREN instruction is: CS# goes low→ sending WREN instruction code→CS# goes high. (see
Figure 9)
(2) Write Disable (WRDI)
The Write Disable (WRDI) instruction is for resetting Write Enable Latch (WEL) bit.
The sequence of issuing WRDI instruction is: CS# goes low→sending WRDI instruction code→ CS# goes high. (see
Figure 10)
The WEL bit is reset by following situations:
- Power-up
- Write Disable (WRDI) instruction completion
- Page Program (PP) instruction completion
- Quad Page Program (4PP) instruction completion
- Sector Erase (SE) instruction completion
- Block Erase (BE) instruction completion
- Chip Erase (CE) instruction completion
- Continuously program mode (CP) instruction completion
- Block Write Lock Protection (BLOCKP) instruction completion
- Chip Unprotect (UNLOCK) instruction completion
(3) Read Identification (RDID)
The RDID instruction is for reading the manufacturer ID of 1-byte and followed by Device ID of 2-byte. The MXIC
Manufacturer ID is C2(hex), the memory type ID is 26 (hex) as the first-byte device ID, and the individual device ID
of second-byte ID are listed as table of "ID Definitions". (see table 7 in page 26)
The sequence of issuing RDID instruction is: CS# goes low→sending RDID instruction code→24-bits ID data out on
SO→ to end RDID operation can use CS# to high at any time during data out. (see Figure 11.)
While Program/Erase operation is in progress, it will not decode the RDID instruction, so there's no effect on the cy-
cle of program/erase operation which is currently in progress. When CS# goes high, the device is at standby stage.
(4) Read Status Register (RDSR)
The RDSR instruction is for reading Status Register Bits. The Read Status Register can be read at any time (even in
program/erase/write status register condition) and continuously. It is recommended to check the Write in Progress (WIP)
bit before sending a new instruction when a program, erase, or write status register operation is in progress.
The sequence of issuing RDSR instruction is: CS# goes low→sending RDSR instruction code→Status Register
data out on SO (see Figure 12)
The definition of the status register bits is as below:
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WIP bit. The Write in Progress (WIP) bit, a volatile bit, indicates whether the device is busy in program/erase/write
status register progress. When WIP bit sets to 1, which means the device is busy in program/erase/write status
register progress. When WIP bit sets to 0, which means the device is not in progress of program/erase/write status
register cycle.
WEL bit. The Write Enable Latch (WEL) bit, a volatile bit, indicates whether the device is set to internal write enable
latch. When WEL bit sets to 1, which means the internal write enable latch is set, the device can accept program/
erase/write status register instruction. When WEL bit sets to 0, which means no internal write enable latch; the de-
vice will not accept program/erase/write status register instruction. The program/erase command will be ignored and
not affect value of WEL bit if it is applied to a protected memory area.
Status Register
bit5
bit5
bit5
bit4
bit3
bit2
bit1
WEL
bit0
WIP
x
x
x
x
x
x
(write enable
latch)
1=write
enable
0=not write 0=not in write
(write in
progress bit)
1=write
operation
reserved
reserved
reserved
reserved
reserved
reserved
enable
volatile bit
operation
volatile bit
Non-volatile bit Non-volatile bit Non-volatile bit Non-volatile bit Non-volatile bit Non-volatile bit
(5) Block Write Lock Protection (BLOCKP)
The BLOCKP instruction is for write protection a specified block of memory, using A23-A16 (A15-A0 don't care) ad-
dress bits to assign a 64Kbyte block to be protected as read only. This feature allows user to stop protecting the en-
tire block through the chip unprotect command (UNLOCK).
The WREN (Write Enable) instruction is required before issuing BLOCKP instruction.
The sequence of issuing BLOCKP instruction is: CS# goes low→ send BLOCKP (E2h) instruction→ send 3 address
bytes assign one block to be protected on SI pin→ CS# goes high. (see Figure 13)
The CS# must go high exactly at the byte boundary, otherwise the instruction will be rejected and not be executed.
(6) Read Block Write Lock status (RDBLOCK)
The RDPLOCK instruction is for reading the status of permanent lock of a specified block, using A23-A16 (A15-A0
=0)address bits to assign a 64Kbyte block and read permanent lock status bit which the first byte of Read-out cycle.
The first byte data out DQ0 is"1" to indicate that this block has be locked permanently, that user can read only but
cannot write, program or erase this block permanently. The first byte data out DQ0 is "0" to indicate that this block
hasn't be protected, and user can read and write this block.
The sequence of issuing RDBLOCK instruction is: CS# goes low →send RDBLOCK (FBh) instruction →send 3 ad-
dress bytes to assign one block on SI pin→read block's protection lock status bit on SO pin→ CS# goes high. (see
Figure 16)
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(7) Chip Unprotect (UNLOCK)
The UNLOCK instruction is for disabling the lock protection block of the whole chip.
The WREN (Write Enable) instruction is required before issuing UNLOCK instruction.
The sequence of issuing UNLOCK instruction is: CS# goes low →send UNLOCK (F3h) instruction →CS# goes high. (see
Figure 14)
The CS# must go high exactly at the byte boundary, otherwise the instruction will be rejected and not be executed.
(8) Read Data Bytes (READ)
The read instruction is for reading data out. The address is latched on rising edge of SCLK, and data shifts out on
the falling edge of SCLK at a maximum frequency fR. The first address byte can be at any location. The address
is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can
be read out at a single READ instruction. The address counter rolls over to 0 when the highest address has been
reached.
The sequence of issuing READ instruction is: CS# goes low→ sending READ instruction code→3-byte address on
SI→ data out on SO→ to end READ operation can use CS# to high at any time during data out. (see Figure 15)
(9) Read Data Bytes at Higher Speed (FAST_READ)
The FAST_READ instruction is for quickly reading data out. The address is latched on rising edge of SCLK, and
data of each bit shifts out on the falling edge of SCLK at a maximum frequency fC. The first address byte can be at
any location. The address is automatically increased to the next higher address after each byte data is shifted out,
so the whole memory can be read out at a single FAST_READ instruction. The address counter rolls over to 0 when
the highest address has been reached.
The sequence of issuing FAST_READ instruction is: CS# goes low→sending FAST_READ instruction code→3-byte
address on SI→1-dummy byte (default) address on SI→data out on SO→to end FAST_READ operation can use
CS# to high at any time during data out. (see Figure 17)
While Program/Erase/Write Status Register cycle is in progress, FAST_READ instruction is rejected without any im-
pact on the Program/Erase/Write Status Register current cycle.
(10) 2 x I/O Read Mode (2READ)
The 2READ instruction enable double throughput of Serial Flash in read mode. The address is latched on rising
edge of SCLK, and data of every two bits(interleave on 2 I/O pins) shift out on the falling edge of SCLK at a maxi-
mum frequency fT. The first address byte can be at any location. The address is automatically increased to the next
higher address after each byte data is shifted out, so the whole memory can be read out at a single 2READ instruc-
tion. The address counter rolls over to 0 when the highest address has been reached. Once writing 2READ instruc-
tion, the following address/dummy/data out will perform as 2-bit instead of previous 1-bit.
The sequence of issuing 2READ instruction is: CS# goes low→sending 2READ instruction→24-bit address inter-
leave on SIO1 & SIO0→ 4-bit dummy cycle on SIO1 & SIO0→data out interleave on SIO1 & SIO0→to end 2READ
operation can use CS# to high at any time during data out (see Figure 18 for 2 x I/O Read Mode Timing Waveform).
While Program/Erase/Write Status Register cycle is in progress, 2READ instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
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(11) 4 x I/O Read Mode (4READ)
The 4READ instruction enable quad throughput of Serial Flash in read mode. The address is latched on rising edge
of SCLK, and data of every four bits(interleave on 4 I/O pins) shift out on the falling edge of SCLK at a maximum
frequency fQ. The first address byte can be at any location. The address is automatically increased to the next
higher address after each byte data is shifted out, so the whole memory can be read out at a single 4READ instruc-
tion. The address counter rolls over to 0 when the highest address has been reached. Once writing 4READ instruc-
tion, the following address/dummy/data out will perform as 4-bit instead of previous 1-bit.
The sequence of issuing 4READ instruction is: CS# goes low→ sending 4READ instruction→24-bit address inter-
leave on SIO3, SIO2, SIO1 & SIO0→ 6 dummy cycles → data out interleave on SIO3, SIO2, SIO1 & SIO0→to end
4READ operation can use CS# to high at any time during data out (see Figure 19 for 4 x I/O Read Mode Timing
Waveform).
Another sequence of issuing 4 READ instruction especially useful in random access is : CS# goes low→ sending 4
READ instruction→ 3-bytes address interleave on SIO3, SIO2, SIO1 & SIO0 → performance enhance toggling bit
P[7:0]→ 4 dummy cycles → data out still CS# goes high → CS# goes low (reduce 4 Read instruction) → 24-bit ran-
dom access address (see Figure 20 for 4x I/O read enhance performance mode timing waveform).
In the performance-enhancing mode, P[7:4] must be toggling with P[3:0] ; likewise P[7:0]=A5h,5Ah,F0h or 0Fh can
make this mode continue and reduce the next 4READ instruction. Once P[7:4] is no longer toggling with P[3:0];
likewise P[7:0]=FFh,00h,AAh or 55h. And afterwards CS# is raised or issuing FF command(CS# goes high→CS#
goes low→sending 0xFF→ CS# goes high) instead of no toggling,the system then will escape from performance
enhance mode and return to normal opertaion.In these cases,tSHSL=15ns(min) will be specified.
While Program/Erase cycle is in progress, 4READ instruction is rejected without any impact on the Program/Erase
current cycle.
(12) Sector Erase (SE)
The Sector Erase (SE) instruction is for erasing the data of the chosen sector to be "1". The instruction is used for
any 4K-byte sector. A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL) bit be-
fore sending the Sector Erase (SE). Any address of the sector (see table 3) is a valid address for Sector Erase (SE)
instruction. The CS# must go high exactly at the byte boundary (the latest eighth of address byte been latched-in);
otherwise, the instruction will be rejected and not executed.
Address bits [Am-A12] (Am is the most significant address) select the sector address.
The sequence of issuing SE instruction is: CS# goes low → sending SE instruction code→ 3-byte address on SI
→CS# goes high. (see Figure 24)
The self-timed Sector Erase Cycle time (tSE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be check out during the Sector Erase cycle is in progress. The WIP sets 1 during the
tSE timing, and sets 0 when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the
sector is protected, the Sector Erase (SE) instruction will not be executed on the sector.
(13) Block Erase (BE)
The Block Erase (BE) instruction is for erasing the data of the chosen block to be "1". The instruction is used for
64K-byte block erase operation. A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL)
bit before sending the Block Erase (BE). Any address of the block (see table 3) is a valid address for Block Erase (BE)
instruction. The CS# must go high exactly at the byte boundary (the latest eighth of address byte been latched-in);
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otherwise, the instruction will be rejected and not executed.
The sequence of issuing BE instruction is: CS# goes low→sending BE instruction code→3-byte address on
SI→CS# goes high. (see Figure 25)
The self-timed Block Erase Cycle time (tBE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be check out during the Sector Erase cycle is in progress. The WIP sets 1 during the
tBE timing, and sets 0 when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the
block is protected, the Block Erase (BE) instruction will not be executed on the block.
(14) Chip Erase (CE)
The Chip Erase (CE) instruction is for erasing the data of the whole chip to be "1". A Write Enable (WREN) instruc-
tion must execute to set the Write Enable Latch (WEL) bit before sending the Chip Erase (CE). The CS# must go
high exactly at the byte boundary, otherwise the instruction will be rejected and not executed.
The sequence of issuing CE instruction is: CS# goes low→sending CE instruction code→CS# goes high. (see Fig-
ure 26)
The self-timed Chip Erase Cycle time (tCE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be check out during the Chip Erase cycle is in progress. The WIP sets 1 during the tCE
timing, and sets 0 when Chip Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset.
(15) Page Program (PP)
The Page Program (PP) instruction is for programming the memory to be "0". A Write Enable (WREN) instruction
must execute to set the Write Enable Latch (WEL) bit before sending the Page Program (PP). The device programs
only the last 256 data bytes sent to the device. If the entire 256 data bytes are going to be programmed, A7-A0 (The
eight least significant address bits) should be set to 0. If the eight least significant address bits (A7-A0) are not all 0,
all transmitted data going beyond the end of the current page are programmed from the start address of the same
page (from the address A7-A0 are all 0). If more than 256 bytes are sent to the device, the data of the last 256-byte
is programmed at the request page and previous data will be disregarded. If less than 256 bytes are sent to the
device, the data is programmed at the requested address of the page without effect on other address of the same
page.
The sequence of issuing PP instruction is: CS# goes low→ sending PP instruction code→ 3-byte address on SI→ at
least 1-byte on data on SI→CS# goes high. (see Figure 21)
The CS# must be kept to low during the whole Page Program cycle; The CS# must go high exactly at the byte
boundary( the latest eighth bit of data being latched in), otherwise the instruction will be rejected and will not be ex-
ecuted.
The self-timed Page Program Cycle time (tPP) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be check out during the Page Program cycle is in progress. The WIP sets 1 during the
tPP timing, and sets 0 when Page Program Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the
page is protected, the Page Program (PP) instruction will not be executed.
(16) 4 x I/O Page Program (4PP)
The Quad Page Program (4PP) instruction is for programming the memory to be "0". A Write Enable (WREN) in-
struction must execute to set the Write Enable Latch (WEL) bit. The Quad Page Programming takes four pins: SIO0,
SIO1, SIO2, and SIO3 as address and data input, which can improve programer performance and the effectiveness
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of application of lower clock less than 20MHz. For system with faster clock, the Quad page program cannot pro-
vide more actual favors, because the required internal page program time is far more than the time data flows in.
Therefore, we suggest that while executing this command (especially during sending data), user can slow the clock
speed down to 20MHz below. The other function descriptions are as same as standard page program.
The sequence of issuing 4PP instruction is: CS# goes low→sending 4PP instruction code→3-byte address on
SIO[3:0]→ at least 1-byte on data on SIO[3:0]→CS# goes high. (see Figure 22)
(17) Continuously program mode (CP mode)
The CP mode may enhance program performance by automatically increasing address to the next higher address
after each byte data has been programmed.
The Continuously program (CP) instruction is for multiple byte program to Flash. A write Enable (WREN) instruction
must execute to set the Write Enable Latch(WEL) bit before sending the Continuously program (CP) instruction.
CS# requires to go high before CP instruction is executing. After CP instruction and address input, two bytes of
data is input sequentially from MSB(bit7) to LSB(bit0). The first byte data will be programmed to the initial address
range with A0=0 and second byte data with A0=1. If only one byte data is input, the CP mode will not process. If
more than two bytes data are input, the additional data will be ignored and only two byte data are valid. The CP
program instruction will be ignored and not affect the WEL bit if it is applied to a protected memory area. Any byte to
be programmed should be in the erase state (FF) first. It will not roll over during the CP mode, once the last unpro-
tected address has been reached, the chip will exit CP mode and reset write Enable Latch bit (WEL) as "0" and CP
mode bit as "0". Please check the WIP bit status if it is not in write progress before entering next valid instruction.
During CP mode, the valid commands are CP command (AD hex), WRDI command (04 hex), RDSR command (05
hex), and RDSCUR command (2B hex). And the WRDI command is valid after completion of a CP programming
cycle, which means the WIP bit=0.
The sequence of issuing CP instruction is : CS# high to low-> sending CP instruction code→3-byte address on SI→
Data Byte on SI→CS# goes high to low→sending CP instruction......→ last desired byte programmed or sending
Write Disable (WRDI) instruction to end CP mode-> sending RDSR instruction to verify if CP mode is ended. (see
Figure 23 of CP mode timing waveform)
Three methods to detect the completion of a program cycle during CP mode:
1) Software method-I: by checking WIP bit of Status Register to detect the completion of CP mode.
2) Software method-II: by waiting for a tBP time out to determine if it may load next valid command or not.
3) Hardware method: by writing ESRY (enable SO to output RY/BY#) instruction to detect the completion of a
program cycle during CP mode. The ESRY instruction must be executed before CP mode execution. Once it is
enable in CP mode, the CS# goes low will drive out the RY/BY# status on SO, "0" indicates busy stage, "1" indi-
cates ready stage, SO pin outputs tri-state if CS# goes high. DSRY (disable SO to output RY/BY#) instruction to
disable the SO to output RY/BY# and return to status register data output during CP mode. Please note that the
ESRY/DSRY command are not accepted unless the completion of CP mode.
(18) Deep Power-down (DP)
The Deep Power-down (DP) instruction is for setting the device on the minimizing the power consumption (to enter-
ing the Deep Power-down mode), the standby current is reduced from ISB1 to ISB2). The Deep Power-down mode
requires the Deep Power-down (DP) instruction to enter, during the Deep Power-down mode, the device is not ac-
tive and all Write/Program/Erase instruction are ignored. When CS# goes high, it's only in standby mode not deep
power-down mode. It's different from Standby mode.
The sequence of issuing DP instruction is: CS# goes low→sending DP instruction code→CS# goes high. (see Fig-
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ure 27)
Once the DP instruction is set, all instruction will be ignored except the Release from Deep Power-down mode (RDP)
and Read Electronic Signature (RES) instruction. (those instructions allow the ID being reading out). When Power-
down, the deep power-down mode automatically stops, and when power-up, the device automatically is in standby
mode. For RDP instruction the CS# must go high exactly at the byte boundary (the latest eighth bit of instruction
code been latched-in); otherwise, the instruction will not executed. As soon as Chip Select (CS#) goes high, a delay
of tDP is required before entering the Deep Power-down mode and reducing the current to ISB2.
(19) Release from Deep Power-down (RDP), Read Electronic Signature (RES)
The Release from Deep Power-down (RDP) instruction is terminated by driving Chip Select (CS#) High. When Chip
Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device was not previously in the
Deep Power-down mode, the transition to the Stand-by Power mode is immediate. If the device was previously in
the Deep Power-down mode, though, the transition to the Stand-by Power mode is delayed by tRES2, and Chip
Select (CS#) must remain High for at least tRES2(max), as specified in Table 6. Once in the Stand-by Power mode,
the device waits to be selected, so that it can receive, decode and execute instructions.
RES instruction is for reading out the old style of 8-bit Electronic Signature, whose values are shown as table of
ID Definitions. This is not the same as RDID instruction. It is not recommended to use for new design. For new
design, please use RDID instruction. Even in Deep power-down mode, the RDP and RES are also allowed to be
executed, only except the device is in progress of program/erase/write cycle; there's no effect on the current pro-
gram/erase/write cycle in progress.
The sequence is shown as Figure 28,29.
The RES instruction is ended by CS# goes high after the ID been read out at least once. The ID outputs repeat-
edly if continuously send the additional clock cycles on SCLK while CS# is at low. If the device was not previously
in Deep Power-down mode, the device transition to standby mode is immediate. If the device was previously in
Deep Power-down mode, there's a delay of tRES2 to transit to standby mode, and CS# must remain to high at
least tRES2(max). Once in the standby mode, the device waits to be selected, so it can be receive, decode, and
execute instruction.
The RDP instruction is for releasing from Deep Power Down Mode.
(20) Read Electronic Manufacturer ID & Device ID (REMS), (REMS2), (REMS4)
The REMS, REMS2 & REMS4 instruction is an alternative to the Release from Power-down/Device ID instruction
that provides both the JEDEC assigned manufacturer ID and the specific device ID.
The REMS, REMS2 & REMS4 instruction is very similar to the Release from Power-down/Device ID instruction.
The instruction is initiated by driving the CS# pin low and shift the instruction code "90h" or "EFh" or "DFh"followed
by two dummy bytes and one bytes address (A7~A0). After which, the Manufacturer ID for MXIC (C2h) and the De-
vice ID are shifted out on the falling edge of SCLK with most significant bit (MSB) first as shown in Figure 29. The
Device ID values are listed in Table of ID Definitions. If the one-byte address is initially set to 01h, then the device
ID will be read first and then followed by the Manufacturer ID. The Manufacturer and Device IDs can be read con-
tinuously, alternating from one to the other. The instruction is completed by driving CS# high.
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Table 5. ID Definitions
manufacturer ID
C2
memory type
memory density
15
RDID Command
26
electronic ID
26
RES Command
manufacturer ID
C2
device ID
26
REMS/REMS2/REMS4/
Command
(21) Enter Secured OTP (ENSO)
The ENSO instruction is for entering the additional 512-bit secured OTP mode. The additional 512-bit secured OTP
is independent from main array, which may use to store unique serial number for system identifier. After entering the
Secured OTP mode, and then follow standard read or program, procedure to read out the data or update data. The
Secured OTP data cannot be updated again once it is lock-down.
The sequence of issuing ENSO instruction is: CS# goes low→sending ENSO instruction to enter Secured OTP
mode→CS# goes high.
Please note that WRSCUR commands is not acceptable during the access of secure OTP region, once security
OTP is lock down, only read related commands are valid.
(22) Exit Secured OTP (EXSO)
The EXSO instruction is for exiting the additional 512-bit secured OTP mode.
The sequence of issuing EXSO instruction is: CS# goes low→sending EXSO instruction to exit Secured OTP
mode→CS# goes high.
(23) Read Security Register (RDSCUR)
The RDSCUR instruction is for reading the value of Security Register bits. The Read Security Register can be read
at any time (even in program/erase/write status register/write parameter register/write security register condition)
and continuously.
The sequence of issuing RDSCUR instruction is : CS# goes low→ send ing RDSCUR instruction→Security Register
data out on SO→CS# goes high.
The definition of the Security Register bits is as below:
Secured OTP Indicator bit. The Secured OTP indicator bit shows the chip is locked by factory before ex- factory or
not. When it is "0", it indicates non- factory lock; "1" indicates factory- lock.
Lock-down Secured OTP (LDSO) bit. By writing WRSCUR instruction, the LDSO bit may be set to "1" for custom-
er lock-down purpose. However, once the bit is set to "1" (lock-down), the LDSO bit and the 512-bit Secured OTP
area cannot be update any more. While it is in 512-bit secured OTP mode, array access is not allowed.
Continuously Program Mode (CP mode) bit. The Continuously Program Mode bit indicates the status of CP
mode, "0" indicates not in CP mode; "1" indicates in CP mode.
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Table 6. Security Register Definition
bit7
bit6
bit5
bit4
bit3
bit2
bit1
bit0
Continuously
Program mode
(CP mode)
LDSO
(indicate if
lock-down
Secrured OTP
indicator bit
x
x
x
x
x
0 = not lock-
down
1 = lock-down
(cannot
program/erase
OTP)
0 = non-factory
lock
0=normal
Program mode
1=CP mode
(default=0)
reserved
reserved
reserved
reserved
reserved
1 = factory
lock
volatile bit volatile bit volatile bit
volatile bit
volatile bit
volatile bit non-volatile bit non-volatile bit
(24) Write Security Register (WRSCUR)
The WRSCUR instruction is for changing the values of Security Register Bits. The WREN instruction is not required
before sending WRSCUR instruction. The WRSCUR instruction may change the values of bit1 (LDSO bit) for cus-
tomer to lock-down the 512-bit Secured OTP area. Once the LDSO bit is set to "1", the Secured OTP area cannot
be updated any more.
The sequence of issuing WRSCUR instruction is :CS# goes low→ sending WRSCUR instruction→CS# goes high.
The CS# must go high exactly at the boundary; otherwise, the instruction will be rejected and not executed.
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MX25L1655D
POWER-ON STATE
The device is at below states when power-up:
- Standby mode ( please note it is not deep power-down mode)
- Write Enable Latch (WEL) bit is reset
The device must not be selected during power-up and power-down stage unless the VCC achieves below correct
level:
- VCC minimum at power-up stage and then after a delay of tVSL
- GND at power-down
Please note that a pull-up resistor on CS# may ensure a safe and proper power-up/down level.
An internal power-on reset (POR) circuit may protect the device from data corruption and inadvertent data change
during power up state.
For further protection on the device, if the VCC does not reach the VCC minimum level, the correct operation is not
guaranteed. The read, write, erase, and program commands should be sent after the time delay:
- tVSL after VCC reached VCC minimum level
The device can accept read command after VCC reached VCC minimum and a time delay of tVSL.
Please refer to the figure of "power-up timing".
Note:
- To stabilize the VCC level, the VCC rail decoupled by a suitable capacitor close to package pins is recommend-
ed. (generally around 0.1uF)
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MX25L1655D
ELECTRICAL SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
RATING
VALUE
Industrial grade
-40°C to 85°C
-55°C to 125°C
-0.5V to 4.6V
-0.5V to 4.6V
-0.5V to 4.6V
Ambient Operating Temperature
Storage Temperature
Applied Input Voltage
Applied Output Voltage
VCC to Ground Potential
NOTICE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
the device. This is stress rating only and functional operational sections of this specification is not implied. Ex-
posure to absolute maximum rating conditions for extended period may affect reliability.
2. Specifications contained within the following tables are subject to change.
3. During voltage transitions, all pins may overshoot Vss to -2.0V and Vcc to +2.0V for periods up to 20ns, see Figure 2, 3.
Figure 3. Maximum Positive Overshoot Waveform
Figure 2.Maximum Negative Overshoot Waveform
20ns
20ns
20ns
Vss
Vcc + 2.0V
Vss-2.0V
Vcc
20ns
20ns
20ns
CAPACITANCE TA = 25°C, f = 1.0 MHz
SYMBOL PARAMETER
MIN.
TYP
MAX.
UNIT
pF
CONDITIONS
VIN = 0V
CIN
Input Capacitance
6
8
COUT Output Capacitance
pF
VOUT = 0V
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26
MX25L1655D
Figure 4. INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL
Input timing referance level
Output timing referance level
0.8VCC
0.2VCC
0.7VCC
0.3VCC
AC
Measurement
Level
0.5VCC
Note: Input pulse rise and fall time are <5ns
Figure 5. OUTPUT LOADING
DEVICE UNDER
TEST
2.7K ohm
+3.3V
CL
6.2K ohm
DIODES=IN3064
OR EQUIVALENT
CL=30pF Including jig capacitance
(CL=15pF Including jig capacitance for 104MHz, 75MHz@2xI/O and 75MHz@4xI/O)
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MX25L1655D
Table 7. DC CHARACTERISTICS (Temperature = -40°C to 85°C for Industrial grade, VCC = 2.7V ~ 3.6V)
SYMBOL PARAMETER
NOTES
MIN.
MAX.
± 2
± 2
20
UNITS TEST CONDITIONS
ILI
Input Load Current
1
1
1
uA VCC = VCC Max, VIN = VCC or GND
uA VCC = VCC Max, VIN = VCC or GND
uA VIN = VCC or GND, CS# = VCC
uA VIN = VCC or GND, CS# = VCC
ILO
Output Leakage Current
ISB1 VCC Standby Current
ISB2 Deep Power-down
Current
20
f=104MHz, fQ=75MHz (4 x I/O read)
SCLK=0.1VCC/0.9VCC, SO=Open
25
20
10
mA
f=66MHz, fT=75MHz (2 x I/O read)
SCLK=0.1VCC/0.9VCC, SO=Open
ICC1 VCC Read
1
1
mA
f=33MHz, SCLK=0.1VCC/0.9VCC,
SO=Open
mA
VCC Program Current
ICC2
(PP)
20
20
mA Program in Progress, CS# = VCC
VCC Sector Erase
ICC4
1
1
mA Erase in Progress, CS#=VCC
mA Erase in Progress, CS#=VCC
Current (SE)
VCC Chip Erase Current
ICC5
(CE)
20
VIL
VIH
VOL
Input Low Voltage
Input High Voltage
Output Low Voltage
-0.5
0.3VCC
V
V
0.7VCC VCC+0.4
0.4
V
V
IOL = 1.6mA
IOH = -100uA
VOH Output High Voltage
VCC-0.2
Notes :
1. Typical values at VCC = 3.3V, T = 25°C. These currents are valid for all product versions (package and speeds).
2. Typical value is calculated by simulation.
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MX25L1655D
Table 8. AC CHARACTERISTICS (Temperature = -40°C to 85°C for Industrial grade, VCC = 2.7V ~ 3.6V)
Symbol Alt. Parameter
Min.
Typ.
Max.
Unit
86/104
(Condition:15pF)
D.C.
MHz
Clock Frequency for the following instructions:
fC FAST_READ, PP, SE, BE, CE, DP, RES,RDP
WREN, WRDI, RDID, RDSR
fSCLK
66
D.C.
MHz
(Condition:30pF)
fRSCLK
fTSCLK
fR Clock Frequency for READ instructions
fT Clock Frequency for 2READ instructions
33
75
75
MHz
MHz
fQ Clock Frequency for 4READ instructions
MHz
(Condition:15pF)
tCH(1) tCLH Clock High Time
4.7
4.7
0.1
0.1
5
ns
ns
V/ns
V/ns
ns
tCL(1)
tCLCH(2)
tCHCL(2)
tCLL Clock Low Time
Clock Rise Time (3) (peak to peak)
Clock Fall Time (3) (peak to peak)
tSLCH tCSS CS# Active Setup Time (relative to SCLK)
tCHSL CS# Not Active Hold Time (relative to SCLK)
tDVCH tDSU Data In Setup Time
5
2
ns
ns
tCHDX
tCHSH
tSHCH
tDH Data In Hold Time
5
5
8
15
50
ns
ns
ns
ns
ns
ns
ns
CS# Active Hold Time (relative to SCLK)
CS# Not Active Setup Time (relative to SCLK)
Read
tSHSL(3) tCSH CS# Deselect Time
Write/Erase/Program
2.7V-3.6V
3.0V-3.6V
10
8
tSHQZ(2) tDIS Output Disable Time
Clock Low to Output Valid
2.7V-3.6V
10/8
8/6
ns
tCLQV
tV
Loading: 30pF/15pF
tHO Output Hold Time
Write Protect Setup Time
Write Protect Hold Time
3.0V-3.6V
ns
ns
ns
ns
tCLQX
tWHSL
tSHWL
tDP(2)
0
20
100
CS# High to Deep Power-down Mode
CS# High to Standby Mode without Electronic
Signature Read
CS# High to Standby Mode with Electronic Signature
Read
10
us
tRES1(2)
tRES2(2)
8.8
us
us
8.8
tC
Chip Unlock Cycle Time
Byte-Program
Page Program Cycle Time
Sector Erase Cycle Time
Block Erase Cycle Time
40
9
1.4
60
0.7
14
100
300
5
300
2
ms
us
ms
ms
s
tBP
tPP
tSE
tBE
tCE
Chip Erase Cycle Time
30
s
Notes:
1. tCH + tCL must be greater than or equal to 1/ fC
2. Value guaranteed by characterization, not 100% tested in production.
3. tSHSL=15ns from read instruction, tSHSL=50ns from Write/Erase/Program instruction.
4. Test condition is shown as Figure 4, 5.
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MX25L1655D
Timing Analysis
Figure 6. Serial Input Timing
tSHSL
tSHCH
tCHCL
CS#
tCHSL
tSLCH
tCHSH
SCLK
tDVCH
tCHDX
tCLCH
MSB
LSB
SI
High-Z
SO
Figure 7. Output Timing
CS#
tCH
SCLK
tCLQV
tCLQV
tCL
tSHQZ
tCLQX
SO
tCLQX
LSB
tQLQH
tQHQL
ADDR.LSB IN
SI
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MX25L1655D
Figure 8. WP# Setup Timing and Hold Timing
WP#
tSHWL
tWHSL
CS#
0
1
2
3
4
5
6
7
8
9
10 11 12
13 14
15
SCLK
01
SI
High-Z
SO
Figure 9. Write Enable (WREN) Sequence (Command 06)
CS#
0
1
2
3
4
5
6
7
SCLK
Command
06
SI
High-Z
SO
Figure 10. Write Disable (WRDI) Sequence (Command 04)
CS#
0
1
2
3
4
5
6
7
SCLK
Command
04
SI
High-Z
SO
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MX25L1655D
Figure 11. Read Identification (RDID) Sequence (Command 9F)
CS#
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18
28 29 30 31
SCLK
SI
Command
9F
Manufacturer Identification
Device Identification
High-Z
SO
7
6
5
3
2
1
0
15 14 13
MSB
3
2
1
0
MSB
Figure 12. Read Status Register (RDSR) Sequence (Command 05)
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
SCLK
SI
command
05
Status Register Out
Status Register Out
High-Z
SO
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
MSB
MSB
Figure 13. Block Write Lock Protection (BLOCKP) Sequence (Command E2)
CS#
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
Command
E2
24 Bit Address
SI
23 22
MSB
2
1
0
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MX25L1655D
Figure 14. Chip Unprotect (UNLOCK) Sequence (Command F3)
CS#
0
1
2
3
4
5
6
7
SCLK
SI
Command
F3
Figure 15. Read Data Bytes (READ) Sequence (Command 03)
CS#
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
command
03
24-Bit Address
23 22 21
MSB
3
2
1
0
SI
Data Out 1
Data Out 2
High-Z
2
7
6
5
4
3
1
7
0
SO
MSB
Figure 16. Read Block Protection Lock Status (RDBLOCK) Sequence (Command FB)
CS#
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
Command
FB
3 Address Bytes
1 Dummy Bytes
Dummy
SI
23 22 21
MSB
3
2
1
0
Block Protection Lock status out
High-Z
7
6
5
4
3
2
0
1
SO
MSB
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MX25L1655D
Figure 17. Read at Higher Speed (FAST_READ) Sequence (Command 0B)
CS#
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31
SCLK
Command
0B
24 BIT ADDRESS
SI
23 22 21
3
2
1
0
High-Z
SO
CS#
47
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46
SCLK
Configurable
Dummy Cycle
7
6
5
4
3
2
0
1
SI
DATA OUT 2
DATA OUT 1
7
6
5
4
3
2
1
0
7
7
6
5
4
3
2
0
1
SO
MSB
MSB
MSB
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MX25L1655D
Figure 18. 2 x I/O Read Mode Sequence (Command BB)
CS#
0
1
2
3
4
5
6
7
8
9
10 11
18 19 20 21 22 23 24 25 26 27
SCLK
4 dummy
cycle
8 Bit Instruction
12 BIT Address
Data Output
data
address
BB(hex)
dummy
dummy
SI/SIO0
bit6, bit4, bit2...bit0, bit6, bit4....
bit22, bit20, bit18...bit0
High Impedance
address
bit23, bit21, bit19...bit1
data
SO/SIO1
bit7, bit5, bit3...bit1, bit7, bit5....
Figure 19. 4 x I/O Read Mode Sequence (Command EB)
CS#
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23
n
SCLK
4 dummy
cycles
8 Bit Instruction
6 Address cycles
Data Output
Performance
enhance
indicator (Note)
data
address
P4 P0
P5 P1
P6 P2
P7 P3
EB(hex)
SI/SIO0
bit4, bit0, bit4....
bit20, bit16..bit0
High Impedance
High Impedance
High Impedance
address
bit21, bit17..bit1
data
bit5 bit1, bit5....
SO/SIO1
WP#/SIO2
NC/SIO3
address
bit22, bit18..bit2
data
bit6 bit2, bit6....
address
bit23, bit19..bit3
data
bit7 bit3, bit7....
Note:
1. Hi-impedance is inhibited for the two clock cycles.
2. P7≠P3, P6≠P2, P5≠P1 & P4≠P0 (Toggling) is inhibited.
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MX25L1655D
Figure 20. 4 x I/O Read enhance performance Mode Sequence (Command EB)
CS#
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23
n
SCLK
4 dummy
cycles
8 Bit Instruction
6 Address cycles
Data Output
Performance
enhance
indicator (Note)
data
address
P4 P0
P5 P1
P6 P2
P7 P3
EB(hex)
SI/SIO0
bit4, bit0, bit4....
bit20, bit16..bit0
High Impedance
High Impedance
High Impedance
address
bit21, bit17..bit1
data
bit5 bit1, bit5....
SO/SIO1
WP#/SIO2
NC/SIO3
address
bit22, bit18..bit2
data
bit6 bit2, bit6....
address
bit23, bit19..bit3
data
bit7 bit3, bit7....
CS#
n+1
...........
n+7......n+9 ........... n+13
...........
SCLK
4 dummy
cycles
6 Address cycles
Data Output
Performance
enhance
indicator (Note)
data
address
P4 P0
P5 P1
P6 P2
P7 P3
SI/SIO0
bit4, bit0, bit4....
bit20, bit16..bit0
address
bit21, bit17..bit1
data
bit5 bit1, bit5....
SO/SIO1
WP#/SIO2
NC/SIO3
address
bit22, bit18..bit2
data
bit6 bit2, bit6....
address
bit23, bit19..bit3
data
bit7 bit3, bit7....
Note: Performance enhance mode, if P7=P3 & P6=P2 & P5=P1 & P4=P0 (Toggling), ex: A5, 5A, 0F
Reset the performance enhance mode, if P7=P3 or P6=P2 or P5=P1 or P4=P0, ex: AA, 00, FF
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MX25L1655D
Figure 21. Page Program (PP) Sequence (Command 02)
CS#
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
Command
02
24-Bit Address
Data Byte 1
23 22 21
MSB
3
2
1
0
7
6
5
4
3
2
0
1
SI
MSB
CS#
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
SCLK
Data Byte 2
Data Byte 3
Data Byte 256
7
6
5
4
3
2
0
7
6
5
4
3
2
0
7
6
5
4
3
2
0
1
1
1
SI
MSB
MSB
MSB
Figure 22. 4 x I/O Page Program (4PP) Sequence (Command 38)
CS#
10 11 12 13 14 15 16 17 18 19 20 21
Data Data Data Data
0
1
2
3
4
5
6
7
8
9
SCLK
Command
38
6 Address cycle
Byte 1 Byte 2 Byte 3 Byte 4
16 12
8
9
4
0
20
4
0
4
0
4
0
4
0
SI/SIO0
21 17 13
5
6
7
1
2
3
SO/SIO1
WP#/SIO2
NC/SIO3
5
6
7
1
2
3
5
6
7
1
2
3
5
6
7
1
2
3
5
6
7
1
2
3
22 18 14 10
23 19 15 11
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MX25L1655D
Figure 23. Continously Program (CP) Mode Sequence with Hardware Detection (Command AD)
CS#
20 2122 23 24
0
1
30 31 31 32
47 48
0
7
7
8
0
6
7 8
0
1
6 7 8 9
SCLK
Command
AD (hex)
data in
Byte n-1, Byte n
Valid
Command (1)
data in
Byte 0, Byte1
04 (hex)
05 (hex)
24-bit address
SI
high impedance
status (2)
S0
Note: (1) During CP mode, the valid commands are CP command (AD hex), WRDI command (04 hex), RDSR com-
mand (05 hex), and RDSCUR command (2B hex).
(2) Once an internal programming operation begins, CS# goes low will drive the status on the SO pin and
CS# goes high will return the SO pin to tri-state.
(3) To end the CP mode, either reaching the highest unprotected address or sending Write Disable (WRDI)
command (04 hex) may achieve it and then it is recommended to send RDSR command (05 hex) to verify if
CP mode is ended.
Figure 24. Sector Erase (SE) Sequence (Command 20)
CS#
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
Command
20
24 Bit Address
SI
7
6
2
1
0
MSB
Note: SE command is 20(hex).
Figure 25. Block Erase (BE) Sequence (Command D8)
CS#
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
Command
D8
24 Bit Address
2
SI
23 22
MSB
0
1
Note: BE command is D8(hex).
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MX25L1655D
Figure 26. Chip Erase (CE) Sequence (Command 60 or C7)
CS#
0
1
2
3
4
5
6
7
SCLK
SI
Command
60 or C7
Note: CE command is 60(hex) or C7(hex).
Figure 27. Deep Power-down (DP) Sequence (Command B9)
CS#
t
DP
0
1
2
3
4
5
6
7
SCLK
SI
Command
B9
Stand-by Mode
Deep Power-down Mode
Figure 28. Release from Deep Power-down and Read Electronic Signature (RES) Sequence (Command AB)
CS#
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38
SCLK
Command
AB
t
3 Dummy Bytes
RES2
SI
23 22 21
MSB
3
2
1
0
Electronic Signature Out
High-Z
7
6
5
4
3
2
0
1
SO
MSB
Deep Power-down Mode
Stand-by Mode
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MX25L1655D
Figure 29. Release from Deep Power-down (RDP) Sequence (Command AB)
CS#
t
RES1
0
1
2
3
4
5
6
7
SCLK
Command
AB
SI
High-Z
SO
Deep Power-down Mode
Stand-by Mode
Figure 30. Read Electronic Manufacturer & Device ID (REMS) Sequence (Command 90 or EF or DF)
CS#
0
1
2
3
4
5
6
7
8
9 10
SCLK
Command
90
2 Dummy Bytes
SI
15 14 13
3
2
1
0
High-Z
SO
CS#
47
28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46
SCLK
ADD (1)
7
6
5
4
3
2
0
1
SI
Manufacturer ID
Device ID
7
6
5
4
3
2
1
0
7
7
6
5
4
3
2
0
1
X
SO
MSB
MSB
MSB
Notes:
(1) ADD=00H will output the manufacturer's ID first and ADD=01H will output device ID first
(2) Instruction is either 90(hex) or EF(hex) or DF(hex).
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MX25L1655D
Figure 31. Power-up Timing
V
CC
V
(max)
CC
Chip Selection is Not Allowed
V
(min)
CC
Device is fully accessible
tVSL
time
Note: VCC (max.) is 3.6V and VCC (min.) is 2.7V.
Table 11. Power-Up Timing
Symbol
Parameter
Min.
Max.
Unit
tVSL(1)
VCC(min) to CS# low
200
us
Note: 1. The parameter is characterized only.
INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The Status
Register contains 00h (all Status Register bits are 0).
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MX25L1655D
RECOMMENDED OPERATING CONDITIONS
At Device Power-Up
AC timing illustrated in Figure A is recommended for the supply voltages and the control signals at device power-up.
If the timing in the figure is ignored, the device may not operate correctly.
VCC(min)
VCC
GND
tSHSL
tVR
CS#
tCHSL
tSLCH
tCHSH
tSHCH
SCLK
tDVCH
tCHCL
tCHDX
tCLCH
MSB IN
LSB IN
SI
High Impedance
SO
Figure A. AC Timing at Device Power-Up
Symbol
tVR
Parameter
VCC Rise Time
Notes
Min.
20
Max.
500000
Unit
us/V
1
Notes :
1. Sampled, not 100% tested.
2. For AC spec tCHSL, tSLCH, tDVCH, tCHDX, tSHSL, tCHSH, tSHCH, tCHCL, tCLCH in the figure, please refer to
"AC CHARACTERISTICS" table.
P/N: PM1430
REV. 1.2, MAR. 11, 2009
42
MX25L1655D
ERASE AND PROGRAMMING PERFORMANCE
PARAMETER
Min.
TYP. (1)
Max. (2)
100
300
2
UNIT
ms
ms
s
Chip Unprotect
40
60
Sector Erase Cycle Time
Block Erase Cycle Time
0.7
14
Chip Erase Cycle Time
30
s
Byte Program Time (via page program command)
Page Program Cycle Time
Erase/Program Cycle
9
300
5
us
1.4
100,000
9
ms
cycles
us
Block Write Lock Protection
300
Note:
1. Typical program and erase time assumes the following conditions: 25°C, 3.3V, and checker board pattern.
2. Under worst conditions of 85°C and 2.7V.
3. System-level overhead is the time required to execute the first-bus-cycle sequence for the programming com-
mand.
4. The maximum chip programming time is evaluated under the worst conditions of 0C, VCC=3.0V, and 100K cycle
with 90% confidence level.
LATCH-UP CHARACTERISTICS
MIN.
-1.0V
MAX.
Input Voltage with respect to GND on all power pins, SI, CS#
Input Voltage with respect to GND on SO
2 VCCmax
VCC + 1.0V
+100mA
-1.0V
Current
-100mA
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
P/N: PM1430
REV. 1.2, MAR. 11, 2009
43
MX25L1655D
ORDERING INFORMATION
OPERATING
CURRENT
MAX. (mA)
STANDBY
CURRENT
MAX. (uA)
CLOCK
(MHz)
PART NO.
TEMPERATURE PACKAGE
Remark
8-SOP
(200mil)
MX25L1655DM2I-12G
86
25
20
-40°C~85°C
Pb-free
Please contact Macronix sales for specific information regarding 24-ball TFBGA (6x8 mm) ordering information.
P/N: PM1430
REV. 1.2, MAR. 11, 2009
44
MX25L1655D
PART NAME DESCRIPTION
MX 25 L 1655D M2
I
12 G
OPTION:
G: Pb-free
SPEED:
12: 86MHz
TEMPERATURE RANGE:
I: Industrial (-40°C to 85°C)
PACKAGE:
M2: 200mil 8-SOP
DENSITY & MODE:
1655D: 16Mb Security type
TYPE:
L: 3V
DEVICE:
25: Serial Flash
Please contact Macronix sales for specific information regarding 24-ball TFBGA (6x8mm) part name description
P/N: PM1430
REV. 1.2, MAR. 11, 2009
45
MX25L1655D
PACKAGE INFORMATION
P/N: PM1430
REV. 1.2, MAR. 11, 2009
46
MX25L1655D
P/N: PM1430
REV. 1.2, MAR. 11, 2009
47
MX25L1655D
REVISION HISTORY
Revision No. Description
Page
Date
1.1
1. Added 24-ball BGA package
P6,8,44,45 JAN/23/2009
P47
2. Added Read Block Write Lock status (RDBLOCK)
P15,17,33
3. Modified Figure 19. 4 x I/O Read Mode Sequence (Command EB) P35
4. Modified HARDWARE FEATURES: 24-ball BGA note
5. Added QE bit/SRWD bit status register information
6. Revised tCH/tCL Min. value and Notes 3 in Table 10.
7. Changed VWI parameter description
P6,8,44,45
P17
P29
P41
1.2
1. Removed "Low Vcc write inhibit" function
2. Removed QE bit/SRWD bit status register information
3. Removed ICC3
P5,10,25,41 MAR/11/2009
P17,20
4. Modified tCH/tCL from 4.5/4.5ns to 4.7/4.7ns
5. Modified data retention from 10 years to 20 years
P29
P5
P/N: PM1430
REV. 1.2, MAR. 11, 2009
48
MX25L1655D
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M
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Headquarters, FAB2
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49
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