NCE70R1K2K [NCEPOWER]
N-Channel Super Junction Power MOSFET;
| 型号： | NCE70R1K2K |
| 厂家： | 
WUXI NCE POWER SEMICONDUCTOR CO., LTD |
| 描述： | N-Channel Super Junction Power MOSFET |
| 文件： | 总8页 (文件大小：765K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NCE70R1K2K,NCE70R1K2I
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
VDS
700
1200
4
V
mΩ
A
RDS(ON)TYP.
ID
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
Application
● Power factor correction（PFC）
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply（UPS）
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE70R1K2I
NCE70R1K2K
TO-251
NCE70R1K2I
NCE70R1K2K
TO-252
TO-251
TO-252
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
VDS
Value
Unit
V
700
±30
4
Drain-Source Voltage (VGS=0V）
V
Gate-Source Voltage (VDS=0V)
VGS
Continuous Drain Current at Tc=25°C
A
ID (DC)
ID (DC)
IDM (pluse)
PD
Continuous Drain Current at Tc=100°C
2.5
12
A
(Note 1)
A
Pulsed drain current
Maximum Power Dissipation(Tc=25℃)
46
W
Derate above 25°C
0.37
130
2
W/°C
mJ
A
Single pulse avalanche energy (Note2)
Avalanche current(Note 1)
EAS
IAR
Repetitive Avalanche energy ，tAR limited by Tjmax
(Note 1)
0.2
EAR
mJ
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NCE70R1K2K,NCE70R1K2I
Parameter
Symbol
dv/dt
Value
50
Unit
V/ns
V/ns
°C
Drain Source voltage slope, VDS ≤480 V,
Reverse diode dv/dt，VDS ≤480 V,ISD<ID
Operating Junction and Storage Temperature Range
Table 2. Thermal Characteristic
Parameter
15
dv/dt
-55...+150
TJ,TSTG
Symbol
RthJC
Value
2.7
Unit
°C /W
°C /W
Thermal Resistance，Junction-to-Case（Maximum）
Thermal Resistance，Junction-to-Ambient （Maximum）
RthJA
75
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max
Unit
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25℃)
Zero Gate Voltage Drain Current(Tc=125℃)
Gate-Body Leakage Current
Gate Threshold Voltage
BVDSS
IDSS
VGS=0V ID=250μA
VDS=700V,VGS=0V
VDS=700V,VGS=0V
VGS=±30V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=2A
700
V
μA
μA
nA
V
1
IDSS
50
IGSS
±100
3.5
VGS(th)
RDS(ON)
2.5
3
Drain-Source On-State Resistance
Dynamic Characteristics
Forward Transconductance
Input Capacitance
1200 1400
mΩ
gFS
Clss
Coss
Crss
Qg
VDS = 20V, ID = 2.5A
4
S
280
26
PF
PF
PF
nC
nC
nC
Ω
VDS=50V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
2.3
6.5
1.3
2.5
2.5
10
VDS=480V,ID=4A,
VGS=10V
Gate-Source Charge
Qgs
Qgd
RG
Gate-Drain Charge
Intrinsic gate resistance
f = 1 MHz open drain
Switching times
Turn-on Delay Time
td(on)
tr
td(off)
tf
6
3
nS
nS
nS
nS
Turn-on Rise Time
VDD=380V,ID=2.5A,
RG=20Ω,VGS=10V
Turn-Off Delay Time
48
8
60
15
Turn-Off Fall Time
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
Forward On Voltage
ISD
ISDM
VSD
trr
4
A
A
TC=25°C
12
1.3
Tj=25°C,ISD=4A,VGS=0V
1
V
Reverse Recovery Time
150
0.85
11
nS
uC
A
Reverse Recovery Charge
Peak reverse recovery current
Qrr
Irrm
Tj=25°C,IF=4A,di/dt=100A/μs
Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω
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NCE70R1K2K,NCE70R1K2I
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area
Figure2. Source-Drain Diode Forward Voltage
Figure3. Output characteristics
Figure4. Transfer characteristics
Figure5. Static drain-source on resistance
Figure6. RDS(ON) vs Junction Temperature
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NCE70R1K2K,NCE70R1K2I
Figure7. BVDSS vs Junction Temperature
Figure8. Maximum ID vs Junction Temperature
Figure9. Gate charge waveforms
Figure10. Capacitance
Figure11. Transient Thermal Impedance
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NCE70R1K2K,NCE70R1K2I
Test circuit
1）Gate charge test circuit & Waveform
2）Switch Time Test Circuit：
3）Unclamped Inductive Switching Test Circuit & Waveforms
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NCE70R1K2K,NCE70R1K2I
TO-251 Package Information
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min.
Max.
Min.
Max.
0.094
0.054
0.065
0.028
0.035
0.023
0.023
0.262
0.213
0.224
A
A1
B
2.200
1.050
1.350
0.500
0.700
0.430
0.430
6.350
5.200
5.400
2.400
1.350
1.650
0.700
0.900
0.580
0.580
6.650
5.400
5.700
0.087
0.042
0.053
0.020
0.028
0.017
0.017
0.250
0.205
0.213
b
b1
c
c1
D
D1
E
e
2.300 TYP.
0.091 TYP.
e1
L
4.500
7.500
4.700
7.900
0.177
0.295
0.185
0.311
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NCE70R1K2K,NCE70R1K2I
TO-252 Package Information
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min.
2.200
0.000
0.660
0.460
6.500
5.100
Max.
Min.
0.087
0.000
0.026
0.018
0.256
0.201
Max.
0.094
0.005
0.034
0.023
0.264
0.215
A
A1
b
2.400
0.127
0.860
0.580
6.700
5.460
c
D
D1
D2
E
4.830 TYP.
0.190 TYP.
6.000
2.186
9.800
6.200
2.386
0.236
0.086
0.386
0.244
0.094
0.409
e
L
10.400
L1
L2
L3
L4
Φ
θ
2.900 TYP.
1.600 TYP.
0.114 TYP.
0.063 TYP.
1.400
1.700
0.055
0.067
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.350 TYP.
0.211 TYP.
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NCE70R1K2K,NCE70R1K2I
ATTENTION:
■ Any and all NCE products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure
can be reasonably expected to result in serious physical and/or material damage. Consult with your
NCE representative nearest you before using any NCE products described or contained herein in such applications.
■
NCE assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all NCE products described or contained herein.
■ Specifications of any and all NCE products described or contained herein stipulate the performance, characteristics, and
functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that
cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’s products or equipment.
■
NCE Power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
design, redundant design, and structural design.
■ In the event that any or all NCE products(including technical data, services) described or contained herein are controlled
under any of applicable local export control laws and regulations, such products must not be exported without obtaining the
export license from the authorities concerned in accordance with the above law.
■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission
of NCE Power Semiconductor CO.,LTD.
■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE believes information herein is accurate and reliable, but no guarantees are made or implied regarding its
use or any infringements of intellectual property rights or other rights of third parties.
■
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE product
that you intend to use.
■
This catalog provides information as of Mar. 2010. Specifications and information herein are subject to change without notice.
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