2SK3230J4 [NEC]
Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, TUSM, SC-89, 3 PIN;
| 型号： | 2SK3230J4 |
| 厂家： | 
NEC |
| 描述： | Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, TUSM, SC-89, 3 PIN 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK3230
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The 2SK3230 is suitable for converter of ECM.
+0.1
–0.05
0.1
0.3 ± 0.05
FEATURES
• Compact package
G
• High forward transfer admittance
1000 µS TYP. (IDSS = 100 µA)
1600 µS TYP. (IDSS = 200 µA)
• Includes diode and high resistance at G - S
D
S
1.0
1.6 ± 0.1
ORDERING INFORMATION
PART NUMBER
2SK3230
PACKAGE
SC-89 (TUSM)
+0.1
–0
0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage Note1
VDSX
20
–20
10
V
V
EQUIVALENT CIRCUIT
Gate to Drain Voltage
Drain Current
VGDO
ID
mA
mA
mW
°C
Gate Current
IG
10
Drain
Total Power Dissipation Note2
Junction Temperature
Storage Temperature
PT
Tj
200
125
Gate
Tstg
–55 to +125 °C
Source
Notes 1. VGS = –1.0 V
2. Mounted on ceramic substrate of 3.0 cm2 x 0.64 mm
Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D15942EJ1V0DS00 (1st edition)
Date Published January 2002 NS CP(K)
Printed in Japan
2002
©
2SK3230
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Cut-off Current
Gate Cut-off Voltage
SYMBOL
IDSS
TEST CONDITIONS
VDS = 5.0 V, VGS = 0 V
MIN. TYP. MAX. UNIT
40
600
µA
V
VGS(off)
| yfs1 |
| yfs2 |
Ciss
VDS = 5.0 V, ID = 1.0 µA
−0.1
350
350
−1.0
Forward Transfer Admittance
Forward Transfer Admittance
Input Capacitance
VDS = 5.0 V, ID = 30 µA, f = 1.0 kHz
VDS = 5.0 V, VGS = 0 V, f = 1.0 kHz
VDS = 5.0 V, VGS = 0 V, f = 1.0 MHz
See Test Circuit
µS
µS
pF
µV
7.0
1.8
8.0
3.0
Noise Voltage
NV
IDSS RANK
MARKING
J2
J3
J4
J5
J6
J7
IDSS
40 to 70
60 to 110
90 to 180
150 to 300
200 to 450
300 to 600
(µA)
NOISE VOLTAGE TEST CIRCUIT
+4.5 V
JIS A
NV (r.m.s)
R = 1 kΩ
C = 10 pF
2
Data Sheet D15942EJ1V0DS
2SK3230
TYPICAL CHARACTERISTICS (TA = 25°C)
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
DERATING FACTOR OF
POWER DISSIPATION
40
30
100
80
20
10
µ
−1.0 −0.8 −0.6 −0.4 −0.2
0
60
0.2 0.4 0.6 0.8 1.0
−10
−20
−30
−40
40
20
0
20
40 60
80 100 120 140 160
VGS - Gate to Source Voltage - V
TA - Ambient Temperature - ˚C
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
100
50
1.0
0.8
0.6
0.4
0.2
V
DS = 0 V
V
DS = 5 V
f = 1.0 MHz
µ
0
A
20
10
5
µ
I
µ
S
D
1
2
1
1
2
5
10
20
50
100
−0.6
−0.4
−0.2
0
+0.2
V
DS - Drain to Source Voltage - V
V
GS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE AND FORWARD
TRANSFER ADMITTANCE vs. ZERO-GATE VOLTAGE
DRAIN CURRENT CO-RELATION
10.0
V
DS = 5 V
µ
5.0
2.0
1.0
0.5
|yfs
|
0.2
0.1
V
GS (off)
0.05
0.02
0.01
10
20
50
100
200
500 1000
µ
Zero-Gate Voltage Drain Current -
A
3
Data Sheet D15942EJ1V0DS
2SK3230
DRAIN CURRENT vs.
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DRAIN TO SOURCE VOLTAGE
RANK: J2
RANK: J3
0.15 V
250
200
150
100
50
300
240
180
120
60
0.15 V
µ
µ
0.10 V
0.05 V
0.10 V
0.05 V
V
GS = 0 V
V
GS = 0 V
−0.15 V
−0.05 V
−0.10 V
−0.15 V
−0.05 V
−0.10 V
0
0
0
0
0
2
4
6
8
10
10
10
0
2
4
6
8
10
V
DS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
RANK: J5
RANK: J4
500
400
300
200
100
0
400
320
240
160
80
0.15 V
0.10 V
0.15 V
0.10 V
µ
µ
0.05 V
0.05 V
V
GS = 0 V
V
GS = 0 V
−0.05 V
−0.10 V
−0.05 V
−0.10 V
−0.15 V
−0.15 V
0
0
2
4
6
8
10
2
4
6
8
V
DS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
RANK: J6
RANK: J7
0.15 V
0.10 V
700
560
420
280
140
0
900
720
540
360
180
0
0.15 V
0.10 V
µ
µ
0.05 V
0.05 V
VGS = 0 V
V
GS = 0 V
−0.05 V
−0.10 V
−0.05 V
−0.10 V
−0.15 V
−0.15 V
2
4
6
8
0
2
4
6
8
10
V
DS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
4
Data Sheet D15942EJ1V0DS
2SK3230
[MEMO]
5
Data Sheet D15942EJ1V0DS
2SK3230
[MEMO]
6
Data Sheet D15942EJ1V0DS
2SK3230
[MEMO]
7
Data Sheet D15942EJ1V0DS
2SK3230
•
The information in this document is current as of January, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
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redundancy, fire-containment, and anti-failure features.
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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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NEC (as defined above).
M8E 00. 4
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