NE5520279A-T1 [NEC]

NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET; NECS 3.2 V, 2 W , L& S波段中功率硅LD- MOSFET
NE5520279A-T1
元器件型号: NE5520279A-T1
生产厂家: NEC    NEC
描述和应用:

NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
NECS 3.2 V, 2 W , L& S波段中功率硅LD- MOSFET

晶体 射频场效应晶体管 放大器
PDF文件: 总7页 (文件大小:167K)
下载文档:  下载PDF数据表文档文件
型号参数:NE5520279A-T1参数

NE5520279A-T1A

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC, 79A, 4 PIN

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0 NEC

NE5520279A-T1-A

3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

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35 CEL

NE5520379A

NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET

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104 CEL

NE5520379A

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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2 NEC

NE5520379A-A

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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0 NEC

NE5520379A-T1

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

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0 CEL

NE5520379A-T1A

暂无描述

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0 CEL

NE5520379A-T1A-A

NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET

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75 CEL

NE5521

LVDT signal conditioner

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338 PHILIPS

NE5521D

LVDT signal conditioner

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177 PHILIPS

NE5521D-T

LVDT Conditioner

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136 ETC

NE5521F

IC SIGNAL CONDITIONER, CDIP18, CERDIP-18, Position Converter

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0 PHILIPS

NE5521N

LVDT signal conditioner

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167 PHILIPS

NE552R479A

NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET

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67 CEL

NE552R479A-T1

S BAND, Si, N-CHANNEL, RF POWER, MOSFET, 79A, 4 PIN

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0 RENESAS