NESG220034-T1-A [NEC]
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG); NPN硅锗RF晶体管UHF- BAND ，低噪声，低失真功放3 - pin电源MINIMOLD （ 34 PKG ）
| 型号： | NESG220034-T1-A |
| 厂家： | 
NEC |
| 描述： | NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) |
| 文件： | 总9页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
NESG220034
NPN SiGe RF TRANSISTOR FOR
UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION
3-PIN POWER MINIMOLD (34 PKG)
FEATURES
•
The device is an ideal choice for low noise, low distortion amplification.
NF = 0.7 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz
PO (1 dB) = 22.5 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz
OIP3 = 35 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz
Maximum stable power gain: MSG =12.5 dB TYP. @ VCE = 5 V, IC = 40 mA, f = 1 GHz
SiGe HBT technology (UHS2) : fT = 11.5 GHz
•
•
•
•
•
•
This product is improvement of ESD of NESG2xxx series.
3-pin power minimold (34 PKG)
ORDERING INFORMATION
Part Number
NESG220034
Order Number
Package
Quantity
Supplying Form
NESG220034-A
3-pin power minimold
(34 PKG) (Pb-Free)
25 pcs
• Magazine case
(Non reel)
NESG220034-T1 NESG220034-T1-A
1 kpcs/reel • 12 mm wide embossed taping
• Pin 2 (Collector) face the perforation side of the
tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 25 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10767EJ02V0DS (2nd edition)
Date Published November 2009 NS
Printed in Japan
2009
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NESG220034
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Collector to Emitter Voltage
Base CurrentNote 1
Symbol
VCBO
VCES
VCEO
IB
Ratings
Unit
V
5.5
13
V
5.5
V
36
mA
mA
mW
°C
°C
Collector Current
IC
200
Note 2
<R>
Total Power Dissipation
Junction Temperature
Storage Temperature
Ptot
886
Tj
150
Tstg
−65 to +150
Notes 1. Depend on the ESD protect device.
2. Mounted on 3.8 cm × 9.0 cm ×0.8 mm (t) glass epoxy PWB
THERMAL RESISTANCE (TA = +25°C)
Parameter
Symbol
Rthj-a
Ratings
141
Unit
Termal Resistance from Junction to
AmbientNote
°C/W
<R>
Note Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB
RECOMMENDED OPERATING RANGE (TA = +25°C)
Parameter
Collector Current
Symbol
MIN.
TYP.
40
MAX.
Unit
mA
IC
−
−
<R>
2
Data Sheet PU10767EJ02V0DS
NESG220034
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
IEBO
VCB = 5 V, IE = 0 mA
−
−
−
−
100
100
260
nA
nA
−
VEB = 0.4 V, IC = 0 mA
VCE = 5 V, IC = 10 mA
Note 1
hFE
140
180
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure (1)
fT
VCE = 5 V, IC = 40 mA, f = 1 GHz
−
9.5
−
11.5
11.5
0.7
−
−
GHz
dB
⏐S21e⏐2 VCE = 5 V, IC = 40 mA, f = 1 GHz
NF1
NF2
Ga1
Ga2
VCE = 5 V, IC = 10 mA, f = 1 GHz,
ZS = ZSopt, ZL = 50Ω
1.1
dB
Noise Figure (2)
VCE = 5 V, IC = 40 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
−
8.5
−
0.9
−
−
−
dB
dB
dB
Associated Gain (1)
Associated Gain (2)
VCE = 5 V, IC = 10 mA, f = 1 GHz,
ZS = ZSopt, ZL = 50Ω
10.5
12.0
VCE = 5 V, IC = 40 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
Note 2
Reverse Transfer Capacitance
Maximum Stable Power Gain
Cre
VCB = 5 V, IE = 0 mA, f = 1 MHz
−
11.0
−
0.9
1.1
−
pF
dB
MSGNote 3 VCE = 5 V, IC = 40 mA, f = 1 GHz
12.5
22.5
Gain 1 dB Compression Output
Power
PO (1 dB)
VCE = 5 V, IC (set) = 40 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
−
dBm
Output 3rd Order Intercept Point
OIP3
VCE = 5 V, IC (set) = 40 mA, f = 1 GHz,
−
35
−
dBm
Δf = 1 MHz, ZS = ZSopt, ZL = ZLopt
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded.
S21
S12
3. MSG =
hFE CLASSIFICATION
Rank
FB
SS
Marking
hFE Value
140 to 260
3
Data Sheet PU10767EJ02V0DS
NESG220034
<R>
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
1 000
886
3.8 cm × 9.0 cm × 0.8 mm (t),
f = 1 MHz
FR–4
500
0
25
50
75
100
125
(°C)
150
0
1
2
3
4
5
Collector to Base Voltage VCB (V)
Ambient Temperature T
A
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
100
10
V
CE = 3 V
V
CE = 5 V
1
0.1
1
0.1
0.01
0.01
0.001
0.0001
0.001
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
0.4
0.5
0.6
0.7
0.8
0.9
Base to Emitter Voltage VBE (V)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
200
150
μ
1 500 A
1 700 A
μ
1 300
1 100
μ
μ
A
A
900
700
μ
μ
A
A
100
50
0
μ
μ
500
300
A
A
μ
I
B
= 100
4
A
0
1
2
3
5
Collector to Emitter Voltage VCE (V)
Remark The graphs indicate nominal characteristics.
4
Data Sheet PU10767EJ02V0DS
NESG220034
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
100
10
1 000
100
10
VCE = 3 V
VCE = 5 V
1
0.1
1
1
1
100
(mA)
100
(mA)
0.1
10
1 000
10
1 000
Collector Current I
C
Collector Current I
C
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
30
V
CE = 5 V,
V
CE = 3 V,
f = 1 GHz
f = 1 GHz
25
20
15
10
25
20
15
10
5
0
5
0
1
10
100
1
10
100
Collector Current I
C
(mA)
Collector Current I (mA)
C
Remark The graphs indicate nominal characteristics.
5
Data Sheet PU10767EJ02V0DS
NESG220034
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
30
25
20
15
10
5
35
30
25
20
15
10
5
V
CE = 3 V,
V
CE = 3 V,
I = 10 mA
C
I = 40 mA
C
MSG
MAG
MAG
MSG
MAG
MAG
MSG
MSG
2
2
|S21e
|
|S21e|
0
0.1
0
0.1
10
1
10
1
Frequency f (GHz)
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
30
25
20
15
10
5
35
30
25
20
15
10
5
V
CE = 5 V,
V
CE = 5 V,
I = 10 mA
C
I = 40 mA
C
MSG
MAG
MAG
MSG
MAG
MAG
MSG
MSG
2
2
|S21e
|
|S21e|
0
0
0.1
1
10
0.1
1
10
Frequency f (GHz)
Frequency f (GHz)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
15
10
5
20
15
10
5
V
CE = 5 V,
V
CE = 3 V,
f = 1 GHz
f = 1 GHz
MSG
MSG
MAG
MAG
2
2
|S21e
|
|S21e|
0
0
1
10
Collector Current I
100
1
10
Collector Current I
100
C
(mA)
C
(mA)
Remark The graphs indicate nominal characteristics.
6
Data Sheet PU10767EJ02V0DS
NESG220034
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
OUTPUT 3RD ORDER INTERCEPT POINT
vs. COLLECTOR CURRENT
4
3
40
16
14
V
CE = 5 V,
V
CE = 5 V,
f = 1 GHz,
f1 = 1.000 GHz,
f2 = 1.001 GHz
Z
S
= ZSopt, Z = 50 Ω
L
30
12
10
8
G
a
2
1
0
20
10
0
6
4
NF
2
0
1
10
Collector Current I
100
1
10
Collector Current I (mA)
100
C
(mA)
C
EACH OUTPUT POWER ,IM
vs. EACH INPUT POWER
3
OUTPUT POWER, LINEAR GAIN,
COLLECTOR CURRENT vs. INPUT POWER
40
30
20
10
0
500
40
30
V
CE = 5 V,
I
C (set) = 40 mA,
f = 1 GHz
20
10
400
300
P
out
P
out (each)
0
–10
–20
–40
–40
–50
–60
–70
–80
G
L
200
100
0
IM
3
I
C
V
CE = 5 V,
I
C (set) = 40 mA,
f1 = 1.000 GHz,
f2 = 1.001 GHz
–10
–20
–20
–10
0
10
Input Power Pin (dBm)
20
–10
0
10
20
30
30
Each Input Power Pin (each) (dBm)
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import
of the parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.necel.com/microwave/en/
7
Data Sheet PU10767EJ02V0DS
NESG220034
PACKAGE DIMENSIONS
3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm)
4.5 0.1
1.6 0.2
1.5 0.1
2
1
3
+0.03
–0.06
0.41
0.42 0.06
0.47 0.06
1.5
0.42 0.06
3.0
PIN CONNECTIONS
1. Emitter
2. Collector
3. Base
8
Data Sheet PU10767EJ02V0DS
NESG220034
•
The information in this document is current as of November, 2009. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products
and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
•
• While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC
Electronics products are not taken measures to prevent radioactive rays in the product design. When customers
use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate
sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in
order to avoid risks of the damages to property (including public or social property) or injury (including death) to
persons, as the result of defects of NEC Electronics products.
•
NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
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The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
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The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
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(Note)
(1)
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(2)
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defined above).
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