NP34N055HLE-AZ [NEC]
Power Field-Effect Transistor, 34A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, MP-3, 3 PIN;
| 型号： | NP34N055HLE-AZ |
| 厂家： | 
NEC |
| 描述： | Power Field-Effect Transistor, 34A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, MP-3, 3 PIN 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP34N055HLE, NP34N055ILE
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER
DESCRIPTION
These products are N-Channel MOS Field Effect Tran-
sistors designed for high current switching applications.
PACKAGE
TO-251
NP34N055HLE
NP34N055ILE
TO-252
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A)
RDS(on)2 = 22 mΩ MAX. (VGS = 5 V, ID = 17 A)
• Low Ciss : Ciss = 2000 pF TYP.
• Built-in gate protection diode
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
VGSS
ID(DC)
ID(pulse)
PT
55
±20
±34
±136
1.2
V
V
Gate to Source Voltage
Drain Current (DC)
A
Drain Current (Pulse) Note1
Total Power Dissipation (TA = 25 °C)
Total Power Dissipation (TC = 25 °C)
Single Avalanche Current Note2
Single Avalanche Energy Note2
Channel Temperature
A
(TO-252)
W
W
PT
88
IAS
34 / 27 / 10
11 / 72 / 100 mJ
175 °C
–55 to + 175 °C
A
EAS
Tch
Storage Temperature
Tstg
Notes 1. PW ≤ 10 µ s, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V (see Figure 4.)
THERMAL RESISTANCE
Channel to Case
Rth(ch-C)
Rth(ch-A)
1.70
125
°C/W
°C/W
Channel to Ambient
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
Date Published March 2001 NS CP(K)
Printed in Japan
D14154EJ3V0DS00 (3rd edition)
The mark ★ shows major revised points.
1999,2000
©
NP34N055HLE, NP34N055ILE
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
RDS(on)1
RDS(on)2
RDS(on)3
VGS(th)
| yfs |
IDSS
TEST CONDITIONS
VGS = 10 V, ID = 17 A
MIN. TYP. MAX.
UNIT
mΩ
mΩ
mΩ
V
Drain to Source On-state Resistance
14
17
18
2
18
22
24
2.5
VGS = 5 V, ID = 17 A
VGS = 4.5 V, ID = 17 A
VDS = VGS, ID = 250 µA
VDS = 10 V, ID = 17 A
VDS = 55 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 25 V
Gate to Source Threshold Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
1.5
9
19
S
10
µA
µA
pF
pF
pF
ns
IGSS
±10
Ciss
2000 3000
Output Capacitance
Coss
Crss
VGS = 0 V
250
130
17
11
57
9
380
230
37
Reverse Transfer Capacitance
Turn-on Delay Time
f = 1 MHz
td(on)
tr
td(off)
tf
ID = 17 A
Rise Time
VGS(on) = 10 V
28
ns
Turn-off Delay Time
Fall Time
VDD = 28 V
110
23
ns
RG = 1 Ω
ns
Total Gate Charge
QG1
ID = 34 A, VDD = 44 V, VGS(on) = 10 V
ID = 34 A
41
23
7
72
nC
nC
nC
nC
V
QG2
35
Gate to Source Charge
Gate to Drain Charge
QGS
VDD = 44 V
QGD
VF(S-D)
trr
VGS = 5 V
12
1.0
42
58
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IF = 34 A, VGS = 0 V
IF = 34 A, VGS = 0 V
di/dt = 100 A/µs
ns
Qrr
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
GS
R
L
RG
= 25 Ω
90%
GS(on)
V
GS
Wave Form
V
10%
0
R
G
PG.
PG.
50 Ω
V
DD
V
DD
VGS = 20→0V
VDS
90%
90%
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
I
AS
V
DS
τ
I
D
t
d(on)
t
r
t
d(off)
tf
VDD
t
on
toff
τ = 1 µs
Duty Cycle ≤ 1 %
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
RL
PG.
50 Ω
V
DD
2
Data Sheet D14154EJ3V0DS
NP34N055HLE, NP34N055ILE
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
140
120
100
80
100
80
60
40
20
0
60
40
20
0
0
25 50 75 100 125 150 175 200
0
25 50 75 100 125 150 175 200
- Case Temperature - ˚C
T
C
TC - Case Temperature - ˚C
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
Figure3. FORWARD BIAS SAFE OPERATING AREA
★
120
100
80
60
40
20
0
1000
100
10
100 mJ
72 mJ
I
D(pulse)
I
D(DC)
DC
I
AS = 10 A
27 A
34 A
1
11 mJ
25 50
T
C
= 25˚C
Single Pulse
0.1
0.1
1
10
100
75
100
125
150
175
V
DS - Drain to Source Voltage - V
Starting Tch - Starting Channel Temperature - ˚C
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
Rth(ch-A) = 125 ˚C/W
Rth(ch-C) = 1.70 ˚C/W
100
10
1
0.1
0.01
Single Pulse
= 25˚C
T
C
10 µ
1 m
10 m
100 m
1
10
100
1000
100 µ
PW - Pulse Width - s
3
Data Sheet D14154EJ3V0DS
NP34N055HLE, NP34N055ILE
Figure6. FORWARD TRANSFER CHARACTERISTICS
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
Pulsed
Pulsed
200
160
120
10
T
A
= −55˚C
25˚C
V
GS = 10 V
75˚C
150˚C
175˚C
1
0.1
5 V
80
40
0
4.5 V
2
0.01
5
6
1
2
3
4
4
8
6
0
VGS - Gate to Source Voltage - V
V
DS - Drain to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
40
VDS=10V
Pulsed
Pulsed
35
10
30
25
20
T
A
= 175˚C
75˚C
25˚C
1
0.1
ID = 17 A
−55˚C
15
10
5
0.01
0.01
0
0.1
1
10
100
0
5
10
15
20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
Figure10. DRAIN TO SOURCE ON-STATE
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
RESISTANCE vs. DRAIN CURRENT
Pulsed
40
35
30
25
20
15
10
5
3.0
V
DS = V
GµS
I
D
= 250 A
2.5
V
GS = 10 V
5 V
2.0
1.5
1.0
4.5 V
0.5
0
0
1
10
100
1000
−50
0
50
100
150
I
D
- Drain Current - A
Tch - Channel Temperature - ˚C
4
Data Sheet D14154EJ3V0DS
NP34N055HLE, NP34N055ILE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
45
1000
100
Pulsed
Pulsed
40
35
30
V
GS = 10 V
V
GS = 10 V
5 V
25
20
15
10
5
4.5 V
10
1
V
GS = 0 V
I
D
= 17 A
0.1
0
0
1.5
1.0
- Source to Drain Voltage - V
0.5
100
150
0
50
−50
V
SD
T
ch - Channel Temperature - ˚C
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
Figure15. SWITCHING CHARACTERISTICS
1000
100
10000
1000
100
V
GS = 0 V
f = 1 MHz
tf
C
iss
td(off)
td(on)
C
oss
rss
10
1
C
tr
0.1
1
10
100
10
0.1
1
10
100
ID - Drain Current - A
V
DS - Drain to Source Voltage - V
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Figure16. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
16
14
12
10
8
80
70
60
50
40
30
20
10
0
1000
100
di/dt = 100 A/µs
V
GS = 0 V
V
GS
V
DD = 44 V
28 V
11 V
6
10
1
4
2
V
DS
I
D
= 34 A
35
0
40
0
5
10 15 20
25 30
0.1
1
10
100
Q
G
- Gate Charge - nC
I
F
- Drain Current - A
5
Data Sheet D14154EJ3V0DS
NP34N055HLE, NP34N055ILE
PACKAGE DRAWINGS (Unit : mm)
1)TO-251 (MP-3)
2)TO-252 (MP-3Z)
2.3±0.2
6.5±0.2
5.0±0.2
0.5±0.1
2.3±0.2
6.5±0.2
5.0±0.2
0.5±0.1
1.1±0.2
1.1±0.2
0.9 MAX.
2.3 TYP.
0.8 MAX.
2.3 TYP.
+0.2
+0.2
0.8 TYP.
0.5
0.5
−0.1
−0.1
2.3 TYP.
2.3 TYP.
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
6
Data Sheet D14154EJ3V0DS
NP34N055HLE, NP34N055ILE
[MEMO]
7
Data Sheet D14154EJ3V0DS
NP34N055HLE, NP34N055ILE
•
The information in this document is current as of March, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
相关型号：
NP34N055IHE-AZ
Power Field-Effect Transistor, 34A I(D), 55V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, MP-3Z, 3 PIN
NEC
NP34N055ILE-AZ
Power Field-Effect Transistor, 34A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, MP-3Z, 3 PIN
NEC
NP34N055SLE
34A, 55V, 0.024ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, MP-3ZK, 3 PIN
RENESAS
©2020 ICPDF网 联系我们和版权申明