NP48N055ELE-E2-AY [NEC]
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET; MOS场效应晶体管的开关N沟道功率MOS FET型号: | NP48N055ELE-E2-AY |
厂家: | NEC |
描述: | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
文件: | 总10页 (文件大小:213K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP48N055ELE, NP48N055KLE
NP48N055CLE, NP48N055DLE, NP48N055MLE, NP48N055NLE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R>
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
Pure Sn (Tin)
PACKING
PACKAGE
NP48N055ELE-E1-AY Note1, 2
NP48N055ELE-E2-AY Note1, 2
NP48N055KLE-E1-AY Note1
NP48N055KLE-E2-AY Note1
NP48N055CLE-S12-AZ Note1, 2
NP48N055DLE-S12-AY Note1, 2
NP48N055MLE-S18-AY Note1
NP48N055NLE-S18-AY Note1
TO-263 (MP-25ZJ) typ. 1.4 g
Tape 800 p/reel
TO-263 (MP-25ZK) typ. 1.5 g
Sn-Ag-Cu
TO-220 (MP-25) typ. 1.9 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
Tube 50 p/tube
Pure Sn (Tin)
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
(TO-220)
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 24 A)
RDS(on)2 = 21 mΩ MAX. (VGS = 5 V, ID = 24 A)
RDS(on)3 = 24 mΩ MAX. (VGS = 4.5 V, ID = 24 A)
(TO-262)
• Low input capacitance
Ciss = 1970 pF TYP.
• Built-in gate protection diode
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14095EJ5V0DS00 (5th edition)
Date Published October 2007 NS
Printed in Japan
1999, 2000, 2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NP48N055ELE, NP48N055KLE, NP48N055CLE, NP48N055DLE, NP48N055MLE, NP48N055NLE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse)Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT
55
20
V
V
48
A
140
A
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Channel Temperature
1.8
W
W
°C
°C
A
PT
85
Tch
175
Storage Temperature
Tstg
−55 to +175
46/27/10
2.1/73/100
Single Avalanche CurrentNote2
Single Avalanche EnergyNote2
IAS
EAS
mJ
Notes 1. PW ≤ 10 μs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V (see Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
1.76
83.3
°C/W
°C/W
Rth(ch-A)
2
Data Sheet D14095EJ5V0DS
NP48N055ELE, NP48N055KLE, NP48N055CLE, NP48N055DLE, NP48N055MLE, NP48N055NLE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
10
UNIT
μA
μA
V
IDSS
VDS = 55 V, VGS = 0 V
IGSS
VGS = 20 V, VDS = 0 V
VDS = VGS, ID = 250 μA
VDS = 10 V, ID = 24 A
VGS = 10 V, ID = 24 A
VGS = 5 V, ID = 24 A
VGS = 4.5 V, ID = 24 A
10
Gate to Source Threshold Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
VGS(th)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
1.5
13
2.0
25
2.5
S
13
17
21
mΩ
mΩ
mΩ
pF
pF
pF
ns
16
18
24
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
1970
250
130
17
3000
380
240
38
Coss
Crss
td(on)
tr
VDD = 28 V, ID = 24 A,
VGS = 10 V,
11
27
ns
RG = 1 Ω
Turn-off Delay Time
Fall Time
td(off)
tf
54
110
23
ns
9.3
40
ns
Total Gate Charge
QG1
VDD = 44 V, VGS = 10 V, ID = 48 A
60
nC
nC
nC
nC
V
QG2
VDD = 44 V,
VGS = 5 V,
ID = 48 A
21
32
Gate to Source Charge
Gate to Drain Charge
QGS
7
QGD
VF(S-D)
trr
10
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IF = 48 A, VGS = 0 V
1.0
40
IF = 48 A, VGS = 0 V,
ns
di/dt = 100 A/μs
Qrr
55
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
V
GS
R
L
RG
= 25 Ω
90%
90%
V
GS
Wave Form
V
GS
10%
0
R
G
PG.
GS = 20 → 0 V
PG.
50 Ω
V
DD
V
DD
V
DS
90%
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
I
AS
V
DS
τ
I
D
t
d(on)
t
r
t
d(off)
tf
V
DD
t
on
toff
τ = 1
μ
s
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
RL
PG.
50 Ω
V
DD
3
Data Sheet D14095EJ5V0DS
NP48N055ELE, NP48N055KLE, NP48N055CLE, NP48N055DLE, NP48N055MLE, NP48N055NLE
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
140
120
100
80
100
80
60
40
20
0
60
40
20
0
0
25 50 75 100 125 150 175 200
0
25 50 75 100 125 150 175 200
- Case Temperature - °C
T
C
TC - Case Temperature - °C
Figure3. FORWARD BIAS SAFE OPERATING AREA
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
1000
100
10
120
100
80
60
40
20
0
100 mJ
73 mJ
I
D(pulse)
I
D(DC)
I
AS = 10 A
27 A
46 A
1
Single pulse
= 25°C
2.1 mJ
50
T
C
0.1
0.1
25
75
100
125
150
175
1
10
100
Starting Tch - Starting Channel Temperature - °C
VDS - Drain to Source Voltage - V
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
R
th(ch-A) = 83.3°C/W
th(ch-C) = 1.76°C/W
R
1
0.1
Single pulse
100 1000
0.01
10
μ
100
μ
1 m
10 m
100 m
1
10
PW - Pulse Width - s
4
Data Sheet D14095EJ5V0DS
NP48N055ELE, NP48N055KLE, NP48N055CLE, NP48N055DLE, NP48N055MLE, NP48N055NLE
Figure6. FORWARD TRANSFER CHARACTERISTICS
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1000
140
120
100
80
Pulsed
Pulsed
V
GS = 10 V
100
5 V
T
A
= −40°C
25°C
10
1
60
4.5 V
75°C
150°C
175°C
40
20
0
0.1
1.0
2.0
3.0
4.0
0
1
2
5
6
3
4
V
DS - Drain to Source Voltage - V
V
GS - Gate to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
40
V
DS = 10 V
Pulsed
Pulsed
35
10
30
25
T
A
= 175°C
75°C
25°C
1
ID = 24 A
20
15
10
5
−40°C
0.1
0.01
0
0.01
0.1
1
10
100
0
5
10
15
20
I
D
- Drain Current - A
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
3.0
40
30
20
10
0
V
DS = VGS
Pulsed
I
D
= 250 μA
2.5
2.0
1.5
1.0
V
GS = 4.5 V
5 V
10 V
0.5
0
−50
0
50
100
150
1
10
100
1000
T
ch - Channel Temperature - °C
I
D
- Drain Current - A
5
Data Sheet D14095EJ5V0DS
NP48N055ELE, NP48N055KLE, NP48N055CLE, NP48N055DLE, NP48N055MLE, NP48N055NLE
Figure13. SOURCE TO DRAIN DIODE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
FORWARD VOLTAGE
1000
100
Pulsed
45
40
35
30
25
20
15
10
5
Pulsed
V
GS = 4.5 V
5 V
V
GS = 10 V
10 V
10
1
0 V
I
D
= 24 A
150
ch - Channel Temperature - °C
0.1
0
0
0.5
1.0
1.5
−50
0
50
100
V
F(S-D) - Source to Drain Voltage - V
T
Figure15. SWITCHING CHARACTERISTICS
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1000
100
10000
1000
100
V
GS = 0 V
f = 1 MHz
t
f
C
iss
t
d(off)
t
d(on)
C
oss
rss
t
r
10
1
C
V
V
R
DD = 28 V
GS = 10 V
G
= 1 Ω
0.1
1
10
100
10
0.1
1
10
100
ID - Drain Current - A
V
DS - Drain to Source Voltage - V
Figure16. REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
16
14
12
10
8
80
70
60
50
40
30
20
10
0
1000
100
di/dt = 100 A/μs
V
GS = 0 V
V
DD = 44 V
28 V
11 V
V
GS
6
10
1
4
V
DS
2
I = 48 A
D
0
0
10
20
30
40
0.1
1
10
100
Q
G
- Gate Charge - nC
I
F
- Diode Forward Current - A
6
Data Sheet D14095EJ5V0DS
NP48N055ELE, NP48N055KLE, NP48N055CLE, NP48N055DLE, NP48N055MLE, NP48N055NLE
<R>
PACKAGE DRAWINGS (Unit: mm)
1)TO-263 (MP-25ZJ) Note
2)TO-263 (MP-25ZK)
4.8 MAX.
10 TYP.
4
10.0 0.3
4.45 0.2
1.3 0.2
1.3 0.2
No plating
7.88 MIN.
4
0.025 to
0.25
1
2
3
1.4 0.2
0.7 0.2
0.5 0.2
2.54 TYP.
2.54 TYP.
0.75 0.2
2.54
0.25
1.Gate
1
2
3
2.Drain
3.Source
4.Fin (Drain)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
3)TO-220 (MP-25) Note
4)TO-262 (MP-25 Fin Cut) Note
4.8 MAX.
1.3 0.2
10.6 MAX.
10.0 TYP.
4.8 MAX.
φ
3.6 0.2
10 TYP.
1.3 0.2
4
1
2
3
4
1
2 3
1.3 0.2
1.3 0.2
2.8 0.2
0.5 0.2
1.Gate
0.75 0.3
2.54 TYP.
2.54 TYP.
0.75 0.1
2.54 TYP.
0.5 0.2
2.8 0.2
2.54 TYP.
2.Drain
1.Gate
3.Source
4.Fin (Drain)
2.Drain
3.Source
4.Fin (Drain)
Note Not for new design
7
Data Sheet D14095EJ5V0DS
NP48N055ELE, NP48N055KLE, NP48N055CLE, NP48N055DLE, NP48N055MLE, NP48N055NLE
6)TO-262 (MP-25SK)
5)TO-220 (MP-25K)
4.45 0.2
1.3 0.2
φ
3.8 0.2
10.0 0.2
4.45 0.2
1.3 0.2
10.0 0.2
4
4
1
2 3
1
2
3
1.27 0.2
0.8 0.1
1.27 0.2
0.8 0.1
0.5 0.2
2.5 0.2
0.5 0.2
1.Gate
2.5 0.2
2.54 TYP.
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.54 TYP.
2.54 TYP.
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
8
Data Sheet D14095EJ5V0DS
NP48N055ELE, NP48N055KLE, NP48N055CLE, NP48N055DLE, NP48N055MLE, NP48N055NLE
<R>
<R>
<R>
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Draw-out side
Reel side
MARKING INFORMATION
NEC
Pb-free plating marking
48N055
LE
Abbreviation of part number
Lot code
RECOMMENDED SOLDERING CONDITIONS
These products should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Recommended
Soldering Method
Infrared reflow
Soldering Conditions
Condition Symbol
IR60-00-3
Maximum temperature (Package's surface temperature): 260°C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
MP-25ZJ, MP-25ZK
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Maximum temperature (Solder temperature): 260°C or below
Time: 10 seconds or less
Wave soldering
MP-25, MP-25K, MP-25SK,
MP-25 Fin Cut
THDWS
P350
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Maximum temperature (Pin temperature): 350°C or below
Time (per side of the device): 3 seconds or less
Partial heating
MP-25ZJ, MP-25ZK,
MP-25K, MP-25SK
Partial heating
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Maximum temperature (Pin temperature): 300°C or below
Time (per side of the device): 3 seconds or less
MP-25, MP-25 Fin Cut
P300
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
9
Data Sheet D14095EJ5V0DS
NP48N055ELE, NP48N055KLE, NP48N055CLE, NP48N055DLE, NP48N055MLE, NP48N055NLE
•
The information in this document is current as of October, 2007. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
•
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2)
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
相关型号:
NP48N055KHE-AZ
Power Field-Effect Transistor, 48A I(D), 55V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, MP-25ZK, 3 PIN
NEC
NP48N055KLE
48A, 55V, 0.024ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZK, TO-263, 3 PIN
RENESAS
NP48N055KLE-AZ
Power Field-Effect Transistor, 48A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZK, TO-263, 3 PIN
RENESAS
©2020 ICPDF网 联系我们和版权申明