NP80N055NHE-S18-AY [NEC]
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET; MOS场效应晶体管的开关N沟道功率MOS FET
| 型号： | NP80N055NHE-S18-AY |
| 厂家： | 
NEC |
| 描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| 文件： | 总10页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N055EHE, NP80N055KHE
NP80N055CHE, NP80N055DHE, NP80N055MHE, NP80N055NHE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R>
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
Pure Sn (Tin)
PACKING
PACKAGE
NP80N055EHE-E1-AY Note1, 2
NP80N055EHE-E2-AY Note1, 2
NP80N055KHE-E1-AY Note1
NP80N055KHE-E2-AY Note1
NP80N055CHE-S12-AZ Note1, 2
NP80N055DHE-S12-AY Note1, 2
NP80N055MHE-S18-AY Note1
NP80N055NHE-S18-AY Note1
TO-263 (MP-25ZJ) typ. 1.4 g
Tape 800 p/reel
TO-263 (MP-25ZK) typ. 1.5 g
Sn-Ag-Cu
TO-220 (MP-25) typ. 1.9 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
Tube 50 p/tube
Pure Sn (Tin)
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
(TO-220)
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A)
• Low input capacitance
(TO-262)
Ciss = 2400 pF TYP.
• Built-in gate protection diode
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14096EJ7V0DS00 (7th edition)
Date Published October 2007 NS
Printed in Japan
2002, 2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NP80N055EHE, NP80N055KHE, NP80N055CHE, NP80N055DHE, NP80N055MHE, NP80N055NHE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C) Note1
Drain Current (Pulse) Note2
VDSS
VGSS
ID(DC)
ID(pulse)
PT
55
20
V
V
80
A
200
A
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Channel Temperature
1.8
W
W
°C
°C
A
PT
120
Tch
175
Storage Temperature
Tstg
−55 to +175
45/31/10
2.0/96/100
Single Avalanche Current Note3
Single Avalanche Energy Note3
IAS
EAS
mJ
Notes 1. Calculated constant current according to MAX. allowable channel temperature.
2. PW ≤ 10 μs, Duty cycle ≤ 1%
3. Starting Tch = 25°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
1.25
83.3
°C/W
°C/W
Rth(ch-A)
2
Data Sheet D14096EJ7V0DS
NP80N055EHE, NP80N055KHE, NP80N055CHE, NP80N055DHE, NP80N055MHE, NP80N055NHE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX.
UNIT
μA
μA
V
IDSS
VDS = 55 V, VGS = 0 V
10
10
IGSS
VGS(th)
| yfs |
RDS(on)
Ciss
VGS = 20 V, VDS = 0 V
VDS = VGS, ID = 250 μA
VDS = 10 V, ID = 40 A
VGS = 10 V, ID = 40 A
VDS = 25 V,
2.0
12
3.0
30
4.0
S
8.2
11
mΩ
pF
pF
pF
ns
2400 3600
Output Capacitance
Coss
Crss
VGS = 0 V,
380
180
25
570
330
55
Reverse Transfer Capacitance
Turn-on Delay Time
f = 1 MHz
td(on)
tr
VDD = 28 V, ID = 40 A,
VGS = 10 V,
Rise Time
13
32
ns
Turn-off Delay Time
td(off)
tf
RG = 1 Ω
45
91
ns
Fall Time
13
33
ns
Total Gate Charge
QG
VDD = 44 V,
40
60
nC
nC
nC
V
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
VF(S-D)
trr
VGS = 10 V,
12
ID = 80 A
16
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IF = 80 A, VGS = 0 V
IF = 80 A, VGS = 0 V,
di/dt = 100 A/μs
1.0
49
ns
Qrr
90
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
GS
R
L
RG
= 25 Ω
90%
V
GS
Wave Form
V
GS
10%
0
R
G
PG.
GS = 20 → 0 V
PG.
50 Ω
V
DD
V
DD
V
V
DS
90%
90%
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
I
AS
V
DS
τ
I
D
t
d(on)
t
r
t
d(off)
tf
V
DD
t
on
toff
τ = 1 μs
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
RL
PG.
50 Ω
V
DD
3
Data Sheet D14096EJ7V0DS
NP80N055EHE, NP80N055KHE, NP80N055CHE, NP80N055DHE, NP80N055MHE, NP80N055NHE
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
120
100
80
100
80
60
60
40
40
20
0
20
0
25 50 75 100 125 150 175 200
- Case Temperature - °C
25 50 75 100 125 150 175 200
0
0
TC
TC - Case Temperature - °C
Figure3. FORWARD BIAS SAFE OPERATING AREA
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
100
80
1000
100
10
100 mJ
96 mJ
I
D(pulse)
ID(DC)
I
AS = 10 A
31 A
60
40
20
0
45 A
1
T
C
= 25°C
2.0 mJ
50
Starting Tch - Starting Channel Temperature - °C
Single Pulse
0.1
0.1
25
75
100
125
150
175
1
10
100
V
DS - Drain to Source Voltage - V
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
Rth(ch-A) = 83.3°C/W
10
1
Rth(ch-C) = 1.25°C/W
0.1
0.01
Single Pulse
100 1000
1 m
10 m
100 m
1
10
100
μ
10
μ
PW - Pulse Width - s
4
Data Sheet D14096EJ7V0DS
NP80N055EHE, NP80N055KHE, NP80N055CHE, NP80N055DHE, NP80N055MHE, NP80N055NHE
Figure7. DRAIN CURRENT vs.
Figure6. FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
1000
100
10
Pulsed
200
160
120
T
A
= −40°C
25°C
V
GS =10 V
75°C
150°C
175°C
80
40
0
1
Pulsed
V
DS = 10 V
5
0.1
1
2
4
2
3
3
4
6
1
0
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
50
V
DS =10V
Pulsed
Pulsed
40
30
20
10
T
A
= 175°C
75°C
1
0.1
25°C
−25°C
I = 40 A
D
10
0
0.01
0.01
0.1
0
2
4
6
8
10 12 14 16 18
1
10
100
I
D
- Drain Current - A
VGS - Gate to Source Voltage - V
Figure10. DRAIN TO SOURCE ON-STATE
Figure11. GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
RESISTANCE vs. DRAIN CURRENT
V
DS = VGS
Pulsed
30
20
I
D
= 250 μA
4.0
3.0
2.0
V
GS = 10 V
10
0
1.0
0
1
10
100
1000
−50
0
50
100
150
T
ch - Channel Temperature - °C
I
D
- Drain Current - A
5
Data Sheet D14096EJ7V0DS
NP80N055EHE, NP80N055KHE, NP80N055CHE, NP80N055DHE, NP80N055MHE, NP80N055NHE
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1000
100
10
24
Pulsed
Pulsed
20
V
GS = 10 V
16
12
8
0 V
V
GS = 10 V
1
4
I
D
= 40 A
150
ch - Channel Temperature - °C
0
0.1
0
1.5
1.0
- Source to Drain Voltage - V
0.5
100
0
50
−50
V
F(S-D)
T
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
Figure15. SWITCHING CHARACTERISTICS
10000
1000
100
V
GS = 0 V
f = 1 MHz
Ciss
t
f
1000
t
d(off)
d(on)
Coss
t
Crss
t
r
100
10
10
1
V
V
DD = 28 V
GS = 10 V
R
G
= 1 Ω
0.1
1
10
100
0.1
1
10
100
V
DS - Drain to Source Voltage - V
I
D
- Drain Current - A
Figure16. REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
100
16
14
12
10
8
80
di/dt = 100 A/μs
V
GS = 0 V
60
V
GS
V
DD = 44 V
28 V
11 V
40
20
0
6
10
1
4
2
VDS
I = 80 A
D
0.1
1.0
10
100
0
10
20
30
40
I
F
- Diode Forward Current - A
QG
- Gate Charge - nC
6
Data Sheet D14096EJ7V0DS
NP80N055EHE, NP80N055KHE, NP80N055CHE, NP80N055DHE, NP80N055MHE, NP80N055NHE
<R>
PACKAGE DRAWINGS (Unit: mm)
1)TO-263 (MP-25ZJ) Note
2)TO-263 (MP-25ZK)
4.8 MAX.
10 TYP.
4
10.0 0.3
4.45 0.2
1.3 0.2
1.3 0.2
No plating
7.88 MIN.
4
0.025 to
0.25
1
2
3
1.4 0.2
0.7 0.2
0.5 0.2
2.54 TYP.
2.54 TYP.
0.75 0.2
2.54
0.25
1.Gate
1
2
3
2.Drain
3.Source
4.Fin (Drain)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
3)TO-220 (MP-25) Note
4)TO-262 (MP-25 Fin Cut) Note
4.8 MAX.
1.3 0.2
10.6 MAX.
10.0 TYP.
4.8 MAX.
φ
3.6 0.2
10 TYP.
1.3 0.2
4
1
2
3
4
1
2 3
1.3 0.2
1.3 0.2
2.8 0.2
0.5 0.2
1.Gate
0.75 0.3
2.54 TYP.
2.54 TYP.
0.75 0.1
2.54 TYP.
0.5 0.2
2.8 0.2
2.54 TYP.
2.Drain
1.Gate
3.Source
4.Fin (Drain)
2.Drain
3.Source
4.Fin (Drain)
Note Not for new design
7
Data Sheet D14096EJ7V0DS
NP80N055EHE, NP80N055KHE, NP80N055CHE, NP80N055DHE, NP80N055MHE, NP80N055NHE
6)TO-262 (MP-25SK)
5)TO-220 (MP-25K)
4.45 0.2
1.3 0.2
φ
3.8 0.2
10.0 0.2
4.45 0.2
1.3 0.2
10.0 0.2
4
4
1
2 3
1
2
3
1.27 0.2
0.8 0.1
1.27 0.2
0.8 0.1
0.5 0.2
2.5 0.2
0.5 0.2
1.Gate
2.5 0.2
2.54 TYP.
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.54 TYP.
2.54 TYP.
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
8
Data Sheet D14096EJ7V0DS
NP80N055EHE, NP80N055KHE, NP80N055CHE, NP80N055DHE, NP80N055MHE, NP80N055NHE
<R>
<R>
<R>
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Draw-out side
Reel side
MARKING INFORMATION
NEC
Pb-free plating marking
80N055
HE
Abbreviation of part number
Lot code
RECOMMENDED SOLDERING CONDITIONS
These products should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Recommended
Soldering Method
Infrared reflow
Soldering Conditions
Condition Symbol
IR60-00-3
Maximum temperature (Package's surface temperature): 260°C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
MP-25ZJ, MP-25ZK
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Maximum temperature (Solder temperature): 260°C or below
Time: 10 seconds or less
Wave soldering
MP-25, MP-25K, MP-25SK,
MP-25 Fin Cut
THDWS
P350
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Maximum temperature (Pin temperature): 350°C or below
Time (per side of the device): 3 seconds or less
Partial heating
MP-25ZJ, MP-25ZK,
MP-25K, MP-25SK
Partial heating
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Maximum temperature (Pin temperature): 300°C or below
Time (per side of the device): 3 seconds or less
MP-25, MP-25 Fin Cut
P300
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
9
Data Sheet D14096EJ7V0DS
NP80N055EHE, NP80N055KHE, NP80N055CHE, NP80N055DHE, NP80N055MHE, NP80N055NHE
•
The information in this document is current as of October, 2007. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
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•
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(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
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M8E 02. 11-1
相关型号：
NP80N06ELC
80A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, TO-263, 3 PIN
RENESAS
NP80N06ELD
80A, 60V, 0.02ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, MP-25ZJ, 3 PIN
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