UPG2135TK-E2 [NEC]
Narrow Band Low Power Amplifier, 1429MHz Min, 1453MHz Max, LEADLESS MINIMOLD PACKAGE-6;
| 型号： | UPG2135TK-E2 |
| 厂家： | 
NEC |
| 描述： | Narrow Band Low Power Amplifier, 1429MHz Min, 1453MHz Max, LEADLESS MINIMOLD PACKAGE-6 射频 微波 |
| 文件： | 总9页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG2135TK
L-BAND PA DRIVER AMPLIFIER
DESCRIPTION
The µPG2135TK is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-
band application.
This device can operate with 3.0 V TYP., having the high gain and low distortion. This device is housed in a 6-pin
lead-less minimold package. And this package is able to high-density surface mounting.
FEATURES
•
•
Operation frequency
Supply voltage
: fopt = 1 429 to 1 453 MHz (1 441 MHz TYP.)
: VDD1 = 2.7 to 3.3 V (3.0 V TYP.)
: VDD2 = 3.0 to 4.2 V (3.5 V TYP.)
•
•
•
Circuit current
Power gain
: IDD = 35 mA TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 2.5 V, Pin = −16 dBm
: GP = 30 dB TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 2.5 V, Pin = −16 dBm
: GCR = 42 dB TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 0.5 to 2.5 V,
Pin = −16 dBm
Gain control range
•
•
Low distortion
: Padj1 = −60 dBc TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 2.5 V, Pout = +12 dBm,
∆f = ±50 kHz, 21 kHz Bandwidth
High-density surface mounting : 6-pin lead-less minimold package (1.5 × 1.1 × 0.55 mm)
APPLICATION
Digital Cellular: PDC 1.5 GHz etc.
•
ORDERING INFORMATION
Part Number
Package
6-pin lead-less minimold (1511)
Marking
G3C
Supplying Form
• Embossed tape 8 mm wide
µPG2135TK-E2
• Pin 1, 6 face the perforation side of the tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG2135TK
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10331EJ01V0DS (1st edition)
Date Published March 2003 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2003
µPG2135TK
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
Pin No.
Pin Name
VDD1
(Top View)
(Top View)
(Bottom View)
1
2
3
4
5
6
1
2
3
6
5
4
1
2
3
6
5
4
6
5
4
1
2
3
GND
OUTPUT/VDD2
VAGC
GND
INPUT
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Supply Voltage 1, 2
Symbol
VDD1, 2
VAGC
Pin
Ratings
6.0
Unit
V
Gain Control Voltage
Input Power
6.0
V
−8
dBm
mW
°C
Power Dissipation
PD
140Note
−30 to +90
−35 to +150
Operating Ambient Temperature
Storage Temperature
TA
Tstg
°C
Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C
RECOMMENDED OPERATING RENGE (TA = +25°C, unless otherwise specified)
Parameter
Operating Frequency
Symbol
fopt
MIN.
1 429
2.7
3.0
0
TYP.
1 441
3.0
MAX.
1 453
3.3
Unit
MHz
V
Supply Voltage 1
Supply Voltage 2
Gain Control Voltage
Input Power
VDD1
VDD2
VAGC
Pin
3.5
4.2
V
−
2.5
V
−
−16
−10
dBm
2
Data Sheet PG10331EJ01V0DS
µPG2135TK
ELECTRICAL CHARACTERISTICS
(TA = +25°C, VDD1 = 3.0 V, VDD2 = 3.5 V, π/4DQPSK modulated signal input, with external input and
output matching, unless otherwise specified)
Parameter
Operating Frequency
Symbol
fopt
Test Conditions
MIN.
1 429
−
TYP.
1 441
35
MAX.
1 453
45
Unit
MHz
mA
Circuit Current
IDD
Pin = −16 dBm, VAGC = 2.5 V
Pin = −16 dBm, VAGC = 2.5 V
Power Gain
GP
28
30
−
dB
Adjacent Channel Power Leakage 1
Padj1
Pout = +12 dBm, VAGC = 2.5 V,
−
−60
−55
dBc
∆f = ±50 kHz, 21 kHz Bandwidth
Adjacent Channel Power Leakage 2
Padj2
Pout = +12 dBm, VAGC = 2.5 V,
−
−70
−65
dBc
∆f = ±100 kHz, 21 kHz Bandwidth
Gain Control Range
Gain Control Current
GCR
IAGC
Pin = −16 dBm, VAGC = 0.5 to 2.5 V
37
42
−
dB
VAGC = 0.5 to 2.5 V
−
250
500
µA
3
Data Sheet PG10331EJ01V0DS
µPG2135TK
EVALUATION CIRCUIT
f = 1 429 to 1 453 MHz, VDD1 = 3.0 V, VDD2 = 3.5 V
1
6
5
4
1 000 pF 6.8 nH
V
DD1
INPUT
1 000 pF
2 pF
2
3
8.2 nH
OUTPUT
3 pF
1 nH
5 pF
1 kΩ
1 000 pF
V
DD2
V
AGC
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
4
Data Sheet PG10331EJ01V0DS
µPG2135TK
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
V
DD2
Driver AMP
vd2
6pin L2MM
V
AGC
OUTPUT
C3
R1
AGC
OUT
C2
C4
L1
C6
L2
C5
C1
IN
vd1
L3
INPUT
V
DD1
USING THE NEC EVALUATION BOARD
Symbol
Values
1 000 pF
3 pF
C1, C3, C5
C2
C4
C6
L1
L2
L3
R1
5 pF
2 pF
1.0 nH
8.2 nH
6.8 nH
1 kΩ
5
Data Sheet PG10331EJ01V0DS
µPG2135TK
PACKAGE DIMENSIONS
6-PIN LEAD-LESS MINIMOLD (1511) (UNIT: mm)
1.3±0.1
1.1±0.1
Remark ( ) : Reference value
6
Data Sheet PG10331EJ01V0DS
µPG2135TK
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Soldering Conditions
Condition Symbol
IR260
Peak temperature (package surface temperature)
Time at peak temperature
: 260°C or below
: 10 seconds or less
: 60 seconds or less
: 120±30 seconds
: 3 times
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
VPS
Peak temperature (package surface temperature)
Time at temperature of 200°C or higher
Preheating time at 120 to 150°C
: 215°C or below
: 25 to 40 seconds
: 30 to 60 seconds
: 3 times
VP215
WS260
HS350
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Wave Soldering
Partial Heating
Peak temperature (molten solder temperature)
Time at peak temperature
: 260°C or below
: 10 seconds or less
Preheating temperature (package surface temperature) : 120°C or below
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (pin temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
: 0.2%(Wt.) or below
Maximum chlorine content of rosin flux (% mass)
Caution Do not use different soldering methods together (except for partial heating).
7
Data Sheet PG10331EJ01V0DS
µPG2135TK
•
The information in this document is current as of March, 2003. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4-0110
8
Data Sheet PG10331EJ01V0DS
µPG2135TK
SAFETY INFORMATION ON THIS PRODUCT
The product contains gallium arsenide, GaAs.
Caution GaAs Products
GaAs vapor and powder are hazardous to human health if inhaled or ingested.
• Do not destroy or burn the product.
• Do not cut or cleave off any part of the product.
• Do not crush or chemically dissolve the product.
• Do not put the product in the mouth.
Follow related laws and ordinances for disposal. The product should be excluded from general
industrial waste or household garbage.
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 E-mail: salesinfo@csd-nec.com
NEC Compound Semiconductor Devices Hong Kong Limited
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
TEL: +852-3107-7303
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
TEL: +82-2-558-2120
FAX: +82-2-558-5209
http://www.ee.nec.de/
TEL: +49-211-6503-01 FAX: +49-211-6503-487
FAX: +852-3107-7309 E-mail: ncsd-hk@elhk.nec.com.hk
NEC Electronics (Europe) GmbH
California Eastern Laboratories, Inc.
http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0302-1
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