40DR12 [NELLSEMI]
Glass Passivated Standard Recovery Diodes;
| 型号： | 40DR12 |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | Glass Passivated Standard Recovery Diodes |
| 文件： | 总7页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
40D(R)Series
SEMICONDUCTOR
Nell High Power Products
Glass Passivated Standard Recovery Diodes
(Stud Version), 40A
FEATURES
Glass passivated chips
High surge current capability
Stud cathode and stud anode version
Wide current range
Voltage up to 1600V VRRM
RoHS compliant
TYPICAL APPLICATIONS
Battery charges
Converters
Power supplies
Machine tool controls
Welder
DO-203AB(DO-5)
PRODUCT SUMMARY
IF(AV)
40A
MAJOR RATINGS AND CHARACTERISTICS
40D(R)
PARAMETER
TEST CONDITIONS
UNIT
02 TO 12
16
40
A
40
TC
IF(AV)
ºC
140
110
IF(RMS)
A
A
63
50 HZ
570
595
IFSM
60 HZ
50 HZ
60 HZ
1625
1473
2
A s
2
I t
VRRM
TJ
Range
200 to 1200
1600
V
-65 to 190
-65 to 160
ºC
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM,MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM,MAXIMUM
VRRM,MAXIMUM
VOLTAGE
CODE
TYPE
NON-REPETITIVE
PEAK VOLTAGE
V
TJ-TJ=Maximum
mA
NUMBER
300
500
02
04
06
200
400
600
800
700
9
40D( R )
08
10
900
1100
1300
1700
1000
12
16
1200
1600
4.5
Page 1 of 7
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RoHS
40D(R)Series
SEMICONDUCTOR
Nell High Power Products
FORWARD CONDUCTION
40D(R)
PARAMETER
SYMBOL
UNIT
TEST CONDITIONS
02 TO 12
16
40
40
A
ºC
A
Maximum average forward current
at case temperature
IF(AV)
180° conduction, half sine wave
140
110
IF(RMS)
Maximum RMS forward current
63
570
t = 10ms
No voltage
Maximum peak, one-cycle forward,
non-reptitive surge current
reapplied
t = 8.3ms
595
480
IFSM
A
t = 10ms
100%VRRM
Sinusoidal half wave,
initial TJ = TJ maximum
reapplied
t = 8.3ms
500
t = 10ms
t = 8.3ms
t = 10ms
No voltage
reapplied
1625
1473
1150
1050
2
A s
2
I t
Maximum l²t for fusing
100%VRRM
reapplied
t = 8.3ms
2
I √t
2
A √s
Maximum l²√t for fusing
t = 0.1 to 10 ms, no voltage reapplied
16250
Maximum forward voltage drop
VFM
lpk = 125A, TJ = 25˚C, tp = 400µs rectangular wave
1.30
1.50
V
FORWARD CONDUCTION
40D(R)
PARAMETER
SYMBOL
UNIT
TEST CONDITIONS
16
02 TO 12
Maximum junction operating and
storage temperature range
TJ
ºC
- 65 to190 - 65 to160
Maximum thermal resistace,
junction to case
RthJC
DC operation
0.95
K/W
Maximum thermal resistance
case to heatsink
RthCS
0.25
Mounting surface, smooth, flat and greased
(1)
Not lubricated thread ,tighting on nut
3.4(30)
N · m
(1)
(lbf · in)
Maximum allowable mounting torque
Lubricated thread ,tighting on nut
2.3(20)
4.2(37)
3.2(28)
(2)
(+0% , -10%)
Not lubricated thread ,tighting on hexagon
N · m
(2)
(lbf · in)
Lubricated thread ,tighting on hexagon
g
15
Approximate weight
Case style
0.53
oz.
See dimensions - link at the end of datasheet
DO-203AB (DO-5)
Note
(1) Recommended for pass-through holes.
(2) Recommended for holed threaded heatsinks.
ΔRthJC CONDUCTION
RECTANGULAR CONDUCTION
UNITS
TEST CONDUCTIONS
SINUSOIDAL CONDUCTION
CONDUCTION ANGEL
180˚
120˚
90˚
0.10
0.14
0.16
0.21
0.30
1.50
0.17
0.22
0.31
0.50
TJ = TJ maximum
K/W
60˚
30˚
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Page 2 of 7
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RoHS
40D(R)Series
SEMICONDUCTOR
Nell High Power Products
Fig.2 Current Ratings Characteristics
40D(R) Series(200V to 1200V)
Fig.1 Current Ratings Characteristics
190
180
170
160
150
140
130
190
180
170
160
150
140
130
40D(R) Series(200V to 1200V)
Conduction Period
Conduction Angle
30° 60°
90°
30°
60°
120°
90°
120°
DC
180°
180°
120
0
5
10 15 20 25 30 35 40 45
0
10
20
30
40
50
60
70
Average Forward Current (A)
Average Forward Current (A)
Fig.3 Current Ratings Characteristics
Fig.4 Current Ratings Characteristics
160
150
140
130
120
110
100
160
150
140
130
120
110
100
90
40D(R) Series(1600V)
40D(R) Series(1600V)
Conduction Angle
Conduction Period
30°
60°
90°
30°
60°
90°
120°
120°
180°
180°
DC
80
0
5
10 15 20 25 30 35 40 45
0
10
20
30
40
50
60
70
Average Forward Current (A)
Average Forward Current (A)
Fig.5 Forward Power Loss Characteristics
60
50
40
30
20
10
0
30°
60°
90°
120°
180°
RMS Limit
Conduction Angle
40D(R) Series
(200V to 1200V)
T
= 190°C
J
0
5
10
15
20
25
30
35
40
40
80
120
160
200
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Page 3 of 7
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RoHS
40D(R)Series
SEMICONDUCTOR
Nell High Power Products
Fig.6 Forward Power Loss Characteristics
60
DC
180°
120°
90°
50
40
30
20
10
0
60°
30°
RMS Limit
Conduction Period
40D(R) Series
(200V to 1200V)
T
= 190°C
J
0
10
20
30
40
50
60
70
40
80
120
160
200
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig.7 Forward Power Loss Characteristics
50
45
40
35
30
25
20
15
10
5
180°
120°
90°
60°
30°
RMS Limit
Conduction Angle
40D(R) Series
(1600V)
T
= 160°C
J
0
0
10
20
30
40
25
50
75 100 125 150 175 200
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig.8 Forward Power Loss Characteristics
70
60
50
40
30
20
10
0
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
40D(R) Series
(1600V)
T
= 160°C
J
0
10
20
30
40
50
60
70
40
80
120
160
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Page 4 of 7
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RoHS
40D(R)Series
SEMICONDUCTOR
Nell High Power Products
Fig.9 Maximum Non-Repetitive Surge Current
Fig.10 Maximum Non-Repetitive Surge Current
600
550
500
450
400
350
300
250
200
150
100
Maximum Non Repetitive Surge Current
At Any Rated Load Condition And With
At Rated VRRM Applied Following Surge.
Initial TJ = TJ Max.
Versus Pulse Train Duration.
550
Initial TJ = TJ Max.
500
Reted VRRM Reapplied
@60 Hz 0.0083 s
No Voltage Reapplied
@50 Hz 0.0100 s
450
400
350
300
250
200
40D(R) Series
40D(R) Series
150
100
1
10
100
0.01
0.1
1
Number Of Equal Amplitude Half Cycle current Pulses(N)
Pulse Train Duration (S)
Fig.11 Thermal Impedance ZthJC Characteristics
(Up To 1200V)
Fig.12 Forward Voltage Drop Characteristics
(For 1600V)
1000
1000
TJ = TJ Max.
100
100
TJ = 25°C
TJ = 25°C
TJ = 200°C
10
10
40D(R) Series
40D(R) Series
up to 1200V
1
1
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
1
1.5
2
2.5
3
3.5
4
4.5
Instantaneous Forward Voltage (V)
Square Wave Pulse Duration (s)
Fig.13 Thermal lmpedance ZthJC
characteristic
1
Steady State Value
(DC Operation)
0.1
40D(R) Series
0.01
0.0001
0.001
0.1
1
10
Square Wave Pulse Duration (s)
Page 5 of 7
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RoHS
40D(R)Series
SEMICONDUCTOR
Nell High Power Products
ORDERING INFORMATION TABLE
Device code
40
D
R
12
M
1
2
3
4
5
-
Current rating: Code = IF(AV)
D = Standard recovery device
None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
1
2
3
-
-
-
-
Voltage code × 100 = VRRM (see Voltage Ratings table)
None = Stud base DO-203AB (DO-5) 1/4”-28 UNF-2A, standard type
M = Stud base DO-203AB (DO-5) M6×1.0, standard type
S = Stud base DO-203AB (DO-5) M8×1.0, “Semikron” type
4
5
DO-203AB(DO-5), standard type
Glass-Metal Seal
19(0.75)
Ø15.2(Ø0.598) Max
Ø4.0(Ø0.157)
6.2/7.0
(0.24/0.28)
0.7/1.1
(0.028/0.043)
1/4” 28UNF-2A
For metric devices: M6x1.0
AII dimensions in millimeters (inches)
Page 6 of 7
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RoHS
40D(R)Series
SEMICONDUCTOR
Nell High Power Products
DO-203AB(DO-5), “Semikron” type
Glass-Metal Seal
19(0.75)
Ø15(Ø0.591)
0.7/1.1
(0.028/0.043)
Ø4±0.2(Ø0.157±0.008)
6.8±0.4
(0.268±0.016)
SW17
M8x1.0
AII dimensions in millimeters (inches)
Page 7 of 7
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