MTP50A [NELLSEMI]
Three-Phase Bridge Rectifier, 50A; 三相桥式整流器， 50A
| 型号： | MTP50A |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | Three-Phase Bridge Rectifier, 50A |
| 文件： | 总3页 (文件大小：817K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
RoHS
MTP50A
SEMICONDUCTOR
Nell High Power Products
Three-Phase Bridge Rectifier, 50A
MTP5008A Thru MTP5016A
20
20
~
~
~
-
+
30
66
81
5-M5 SCREWS
All dimensions in millimeters
FEATURES
UL recognition file number E320098
Typical IR less than 2.0 µA
High surge current capability
Low thermal resistance
Compliant to RoHS
Isolation voltage up to 2500V
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave
rectification for big power supply, field supply for DC motor,
PRIMARY CHARACTERRISTICS
industrial automation applications.
IF(AV)
50A
VRRM
IFSM
IR
800V to 1800V
ADVANTAGE
750A
5 µA
1.2V
International standard package
Epoxy meets UL 94 V-O flammability rating
VF
Small volume, light weight
Small thermal resistance
Weight: 195g (6.9 ozs)
TJ max.
150ºC
Page 1 of 3
RoHS
RoHS
MTP50A
SEMICONDUCTOR
Nell High Power Products
MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise noted)
A
MTP50..A
12
PARAMETER
UNIT
SYMBOL
08
10
16
18
VRRM
VRSM
800
900
800
1000
1100
1000
1200
1300
1200
50
1600
1700
1600
1800
1900
1800
Maximum repetitive peak reverse voltage
Peak reverse non-repetitive voltage
V
V
V
A
Maximum DC blocking voltage
VDC
IF(AV)
Maximum average forward rectified output current
Peak forward surge current single sine-wave superimposed on
rated load
IFSM
A
750
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
A2s
I2t
2800
VISO
TJ
RMS isolation voltage from case to leads
Operating junction storage temperature range
Storage temperature range
2500
V
-40 to 150
ºC
ºC
TSTG
-40 to 125
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
MTP50..A
12
TEST
CONDITIONS
UNIT
PARAMETER
SYMBOL
08
10
16
18
IF = 50A
VF
IR
Maximum instantaneous forward drop per diode
1.2
V
Maximum reverse DC current at rated DC blocking
voltage per diod
TA = 25°C
20
µA
TA = 150°C
4000
THERMAL AND MECHANICAC (T = 25°C unless otherwise noted)
A
MTP50..A
12
UNIT
PARAMETER
TEST CONDITIONS
SYMBOL
08
10
16
18
Typical thermal resistance
junction to case
Single-side heat dissipation, sine
half wave
(1)
RθJC
0.3
°C/W
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound.
4
4
Mounting
to heatsink, M5
Nm
g
torque
to heatsink, M5
± 10 %
Approximate weight
195
Notes
(1) With heatsink, single side heat dissipation, half sine wave.
(2) M5 screw.
Device code
16
A
MTP 50
3
4
-
-
Module type: ”MTP” for 3Ø Brıdge
IF(AV) rating:"50" for 50A
1
2
3
4
-
-
Voltage code:code x 100 = VRRM
Package Outline: A type package
Page 2 of 3
RoHS
RoHS
MTP50A
SEMICONDUCTOR
Nell High Power Products
Fig.2 Thermal lmpedance (junction to case)
Fig.1 Forward characteristic
3.5
0.35
0.3
0.25
0.2
3
Tj=150°C
2.5
2
0.15
0.1
1.5
1
0.05
0.5
0
10
100
0.001
0.01
0.1
1
10
1000
Forward current (A)
Time (s)
Fig.4 Case temperature vs output current
Fig.3 Power dissipation vs. output current
250
70
60
50
40
30
20
10
200
150
100
50
0
0
0
10
20
30
40
50
60
70
20 40 60 80 100 120 140 160 180 200
Case Temperature (°C)
Output current (A)
Fig.6 I2t characteristic
Fig.5 Forward surge current vs. cycle
0.8
3.2
2.8
2.4
0.7
0.6
0.5
0.4
0.3
0.2
2
1.6
1.2
0.8
1
10
100
1
10
Cycle @ 50Hz
Time (ms)
Page 3 of 3
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