N-HFA30PA40C [NELLSEMI]
FRED Ultrafast Soft Recovery Diode, 2 x 15 A; FRED超快软恢复二极管， 2× 15 A
| 型号： | N-HFA30PA40C |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | FRED Ultrafast Soft Recovery Diode, 2 x 15 A |
| 文件： | 总5页 (文件大小：939K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
RoHS
N-HFA30PA40C
SEMICONDUCTOR
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode, 2 x 15 A
FEATURES
Ultrafast recovery
Ultrasoft recovery
Very low I
Very low Q
Specified at operating conditions
RRM
rr
Designed and qualified for industrial level
TO-247AB
BENEFITS
Reduced RFI and EMI
common
cathode
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
2
Reduced parts count
DESCRIPTION
HFA30PA40C is a state of the art center tap ultrafast
1
3
recovery diode.
Employing the latest in epitaxial
Anode
Anode
2
2
1
construction and advanced processing techniques
it features a superb combination of characteristics
which result in performance which is unsurpassed by
any rectifier previously available. With basic ratings
of 400V and 15 A per leg continuous current, the
HFA30PA40C is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition
to ultrafast recovery time, the FRED product line
features extremely low values of peak recovery
Common
cathode
PRODUCT SUMMARY
current (I
) and does not exhibit any tendency to
RRM
VR
VF at 15A at 25 °C
IF(AV)
400 V
1.3 V
“snap-off” during the t
b portion of recovery. The FRED
features combine to offer designers a rectifier with
lower noise and significantly lower switching losses
in both the diode and the switching transistor.
These FRED advantages can help to significantly
reduce snubbing, component count and heatsink
sizes. The FRED HFA30PA40C is ideally suited for
applications in power conversion systems (such as
inverters), motor drives, and many other similar
applications where high speed, high efficiency is
needed.
2 x 15 A
19 ns
trr (typical)
TJ (maximum)
Qrr (typical)
150 °C
80 nC
dl(rec)M/dt (typical)
lRRM (typical)
160 A/µs
4.0 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
VR
400
15
V
per leg
Maximum continuous forward current
IF
T
= 100 ºC
c
per device
30
A
Single pulse forward current
lFSM
lFRM
150
60
Maximum repetitive forward current
T
= 25 ºC
75
c
PD
Maximum power dissipation
W
T
= 100 ºC
70
c
TJ, TStg
Operating junction and storage temperature range
- 55 to + 150
ºC
Page 1 of 5
RoHS
RoHS
N-HFA30PA40C
SEMICONDUCTOR
Nell High Power Products
ELECTRICAL SPECIFICATIONS
(T = 25 ºC unless otherwise specified)
J
PARAMETER
SYMBOL
MAX.
TYP.
UNITS
TEST CONDITIONS
MIN.
Cathode to anode
breakdown voltage
-
-
VBR
IR = 100 µA
400
IF = 15 A
IF = 30 A
-
-
1.3
1.6
1.5
-
V
VFM
Maximum forward voltage
IF = 15 A, TJ = 125 ºC
-
-
1.2
VR = VR rated
TJ = 125°C, VR = VR rated
VR = 200V
-
-
-
-
50
500
Maximum reverse
leakage current
IRM
µA
Junction capacitance
Series inductance
pF
nH
CT
LS
50
25
12
-
-
Measured lead to lead 5 mm from package body
-
DYNAMIC RECOVERY CHARACTERISTICS PERLEG (T = 25 ºC unless otherwise specified)
J
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
MAX. UNITS
TYP.
IF = 0.5A, IR = 1.0A, IRR = 250mA (RG#1 CKT)
IF = 1.0 A, dIF/dt = -100 A/µs, VR =30 V, TJ = 25°C
-
-
35
28
trr
-
19
ns
Reverse recovery time
trr1
trr2
-
-
TJ = 25 ºC
35
95
3
60
TJ = 125 ºC
120
IF= 15A
dIF/dt = -200 A/µs
VR = 266 V
IRRM1
TJ = 25 ºC
-
-
6.0
Peak recovery current
A
IRRM2
Qrr1
TJ = 125 ºC
10
6
-
-
TJ = 25 ºC
60
180
Reverse recovery charge
nC
Qrr2
TJ = 125 ºC
300
600
THERMAL - MECHANICAL SPECIFICATIONS PER LEG
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Lead temperature
Tlead
0.063'' from case (1.6 mm) for 10 s
-
-
300
°C
Junction to case,
single leg conduction
Junction to case,
both legs conducting
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
-
-
1.40
RthJC
-
-
-
-
-
0.70
40
-
K/W
RthJA
RthCS
Typical socket mount
Mounting surface, flat, smooth and greased
0.25
-
-
6.0
-
-
g
Weight
0.21
oz.
6.0
(5.0)
12
(10)
kgf . cm
(lbf . in)
Mounting torque
Marking device
-
Case style TO-247AB (JEDEC)
HFA30PA40C
Page 2 of 5
RoHS
RoHS
N-HFA30PA40C
SEMICONDUCTOR
Nell High Power Products
Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
1.40
0.9
1.20
1.00
0.80
0.60
0.40
0.20
0
0.7
0.5
0.3
Note:
t1
t2
Duty Factor D =t /t
1
θJC
2
+T
0.1
0.05
Peak T = PDM xZ
J
SINGLE PULSE
C
10-5
10-4
10-3
10-2
10-1
1.0
Rectangular pulse duration (seconds)
Fig.2 Forward current vs. forward voltage
Fig.3 Reverse recovery time vs. current rate of change
60
120
T
T
=125°C
=266V
J
R
30A
50
40
30
100
80
60
40
20
0
15A
7.5A
T
=125°C
J
20
10
0
T
=25°C
J
T
=150°C
J
T
=150°C
J
T
=-55°C
J
0
0.5
1
1.5
2
2.5
0
200
400
600
800 1000 1200
Anode-to-cathode voltage (V), V
Current rate of change(A/μs), -di /dt
F
F
Fig.4 Reverse recovery charge vs. current rate of change
Fig 5. Reverse recovery current vs. current rate of change
800
25
T
T
=125°C
=266V
J
T
T
=125°C
=266V
J
R
30A
R
700
600
500
400
300
200
30A
20
15
10
5
15A
15A
7.5A
7.5A
100
0
0
0
200
400
600
800 1000 1200
0
200
400
600
800 1000 1200
Current rate of change (A/μs), -di /dt
Current rate of change (A/μs), -di /dt
F
F
Page 3 of 5
RoHS
RoHS
N-HFA30PA40C
SEMICONDUCTOR
Nell High Power Products
Fig.7 Maximum average forward current vs. case temperature
Fig6. Dynamic parameters vs. junction temperature
40
1.4
Duty cycle = 0.5
Q
rr
rr
T
=175°C
J
35
30
25
20
15
10
5
1.2
1.0
0.8
0.6
0.4
0.2
0.0
t
I
RRM
t
rr
Q
rr
0
25
0
25
50
75
100
125
150
50
75
100
125
150
175
Junction temperature (°C),T
Case temperature (°C)
J
Fig.8 Junction capacitance vs. reverse voltage
Fig.9 Reverse recovery parameter test circuit
200
VR = 200 V
150
100
Ω
0.01
L = 70 µH
D.U.T.
D
dI /dt
F
adjust
50
0
IRFP250
G
S
1
10
100 200
reverse voltage (V), V
R
Fig.10 Reverse recovery waveform and definitions
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 I
RRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
and IRRM
(1) dIF/dt - rate of change of current
through zero crossing
x l
2
trr
RRM
(2) IRRM - peak reverse recovery current
Q
rr
=
(3) trr - reverse recovery time measured
/dt - peak rate of change of
(5) dI(rec)M
current during tb portion of trr
from zero crossing point of negative
going I to point where a line passing
F
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
Page 4 of 5
RoHS
RoHS
N-HFA30PA40C
SEMICONDUCTOR
Nell High Power Products
ORDERING INFORMATION TABLE
Device code
-
HFA 30 PA
C
N
40
1
2
3
4
5
6
-
-
-
-
-
-
Nell Semiconductors product
1
2
3
4
FRED family
Current rating (30 = 30 A, 15A x 2)
Package outline (PA = TO-247, 3 pins)
Voltage rating (40 = 400 V)
5
6
Configuration (C = Center tap common cathode)
Page 5 of 5
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