NP505W [NELLSEMI]
Power Modules Passivated Assembled Circuit Elements;
| 型号： | NP505W |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | Power Modules Passivated Assembled Circuit Elements |
| 文件： | 总7页 (文件大小：747K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
NP500 Series
Nell High Power Products
Power Modules
Passivated Assembled Circuit Elements, 50A
Available
RoHS*
COMPLIANT
FEATURES
Glass passivated junctions for greater reliability
Electrically isolated base plate
Available up to 1600 V /V
RRM DRM
High dynamic characteristics
Wide choice of circuit configurations
Simplified mechanical design and assembly
UL approved file E320098
DESCRIPTION
The NP500 series of integrated power circuits consists of
power thyristors and power diodes configured in a single
package. With its isolating base plate, mechanical designs
are greatly simplified giving advantages of cost reduction
and reduced size.
PACE-PAK (D-19 Modified)
Applications include power supplies, control circuits and
battery chargers.
PRODUCT SUMMARY
lO
50A
Type
Modules - Thyristor,Standard
Package
PACE-PAK (D-19 modified)
Single phase, hybrid bridge common cathode,
Single phase, hybrid bridge doubler connection,
Circuit
Single phase, all SCR bridge
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUE
UNIT
lO
80°C
50
A
50 Hz
60 Hz
50 Hz
60 Hz
550
lTSM
,
A
lFSM
576
1510
2
l t
2
A s
1380
2
l √t
2
A √t
15125
400 to 1600
2500
VRRM
VISOL
TJ
Range
V
V
-40 to 125
°C
Tstg
Page 1 of 7
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RoHS
NP500 Series
Nell High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VDRM/VRRM, MAXIMUM REPETITIVE VRSM, MAXIMUM NON-REPETITIVE
PEAK AND OFF-STATE VOLTAGE PEAK REVERSE VOLTAGE
V
lRRM MAXIMUM
AT TJ MAXIMUM
mA
TYPE
NUMBER
V
NP501/NP501W/NP501S
NP502/NP502W/NP502S
NP503/NP503W/NP503S
NP504/NP504W/NP504S
NP505/NP505W/NP505S
400
500
800
900
1000
1200
1600
1100
1300
1700
10
ON-STATE CONDUCTION
SYMBOL
VALUE
UNIT
PARAMETER
TEST CONDITIONS
50
80
A
Maximum DC output current
at case temperature
IO
Full bridge circuits
ºC
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
550
576
460
484
1510
1380
1058
972
No voltage
reapplied
Maximum peak, one cycle
ITSM,
IFSM
A
non-reptitive on-state or forward current
100%VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
2
I t
2
kA s
²
Maximum l t for fusing
100%VRRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
2
I √t
²
Maximum l √t for fusing
2
kA √s
15125
2 2
.
l t for time tx = l √t √t x
V
(16.7 % xꢀx lT(AV)<I<ꢀx l
), TJ = TJ maximum
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage drop
T(TO)1
0.83
ꢁ T(AV)
V
V
(I>ꢀx l
ꢁ T(AV)
), TJ = TJ maximum
T(TO)2
1.03
9.61
7.01
1.4
rt1
(16.7 % xꢀꢂ lT(AV) <I<ꢀx l
ꢁ T(AV)
), TJ = TJ maximum
mΩ
rt2
(I>ꢀx l
ꢁ T(AV)
), TJ = TJ maximum
VTM
ITM =150A
TJ = 25 °C
V
Maximum forward voltage drop
VFM
IFM =150A
TJ = 25 °C
1.4
200
130
250
V
Maximum non-repetitive rate of rise of
turned-on current
TJ = 125 °C from 0.67 VDRM
lTM = 150A, lg = 500 mA, tr < 0.5 µs, tp > 6µs
A/µs
dl/dt
Maximum holding current
lH
mA
TJ = 25°C anode supply = 6V, resistive load
Maximum latching current
lL
Page 2 of 7
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RoHS
NP500 Series
Nell High Power Products
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNIT
Maximum critical rate of rise of
off-state voltage
V/µs
200
TJ = 125°C, exponential to 0.67 VDRM, gate open
dV/dt
Maximum peak reverse and off-state
lRRM,
lDRM,
TJ = 125°C, gate open circuit
10
mA
µA
V
leakage current at VRRM, VDRM
Maximum peak reverse leakage current
lRRM
TJ = 25°C
20
50 Hz, circuit to base, all terminals shorted,
TJ = 25 °C, t = 1s
RMS isolation voltage
lISOL
2500
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES
UNIT
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
8
2
W
PG(AV)
IGM
2
A
V
-VGM
10
3
TJ = -40°C
TJ = 25°C
VGT
Maximum gate voltage required to trigger
2
V
TJ = 125°C
1
Anode supply =
6V resistive load
TJ = -40°C
90
Maximum gate current required to trigger
lGT
TJ = 25°C
60
35
mA
TJ = 125°C
Maximum gate voltage that will not trigger
VGD
0.2
V
TJ = 125°C, rated VDRM applied
Maximum gate current that will not trigger
lGD
2
mA
THERMAL AND MECHANICAL SPECIFICATIONS
SYMBOL
TEST CONDITIONS
VALUES
UNIT
PARAMETER
Maximum junction operating and storage
temperature range
TJ, Tstg
-40 to 125
ºC
Maximum thermal resistance, junction to case
RthJC
DC operation
1.00
0.10
4
per junction
K/W
RthCS
Mounting surface, smooth and greased
Maximum thermal resistance, case to heatsink
(1)
Nm
Mounting torque, base to heatsink
g
58
Approximate weight
oz.
2.0
PACK-PAK
(D-19 modified)
Case style
Note
(1) A mounting compound is recommended and the torque should be checked after a period of 3 hours to allow for the
spread of the compound
Page 3 of 7
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RoHS
NP500 Series
Nell High Power Products
Ordering Information Table
Device code
N
P
50
5
W
1
2
3
4
5
-
Nell Power semiconductors product
Module type
Current rating, 50 = 50A DC
Voltage code
1
2
3
4
-
-
-
4 = 1200V
5 = 1600V
1 = 400V
2 = 800V
3 = 1000V
-
Circuit configuration
5
Blank = Single Phase, Hybrid Bridge Common Cathode
W = Single Phase, Hybrid Bridge Common Cathode with a freewheeling diode
S = Single Phase, all SCR Bridge
CIRCUIT CONFIGURATION
CIRCUIT
CONFIGURATION
CIRCUIT DESCRIPTION
SCHEMATIC DIAGRAM
TERMINAL POSITIONS
CODE
G1
AC1
AC2
-
AC1 G1
Single phase, hybrid
Blank
bridge common cathode
AC2 G2
+
G2
(-)
(-)
(-)
(+)
(+)
(+)
G1
Single phase, hybrid bridge
common cathode with a
freewheeling diode
AC1
AC2
-
AC1 G1
W
AC2 G2
+
G2
G3
G1
AC1
AC2
-
AC1 G2
single phase, all SCR bridge
S
G1 G4
AC2 G3
+
G4
G2
(1)
CODING
CIRCUIT
BASIC
CIRCUIT DESCRIPTION
CONFIGURATION
CODE
SERIES
Single phase, hybrid bridge common cathode
Blank
NP50X
Single phase, hybrid bridge common cathode
W
NP50XW
with a freewheeling diode
single phase, all SCR bridge
S
NP50XS
Note
(1) To complete code refer to voltage Ratings table, i.e.: For 1600V of NP50XW, complete code is NP505W.
Page 4 of 7
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RoHS
NP500 Series
Nell High Power Products
Fig.1 Total Power Loss
Fig.2 On-state power loss characteristics
150
125
100
75
60
50
180°
40
30
20
10
120°
90°
60°
30°
RMS limit
180°
(sine)
50
Conduction angle
25
T =125°C
J
TJ = 125°C
per junction
0
0
0
5
10 15 20 25 30 35 40 45 50
0
10
20
30
40
Total output current (A)
Average on-state current (A)
Fig.3 On-state power loss characteristics
Fig.4 Current ratings characteristics
130
120
110
100
90
70
Fully turned-on
60
DC
180°
120°
50
90°
180°
60°
30°
(Rect.)
40
RMS limit
180°
(Sine)
30
20
Conduction period
80
T =125°C
J
10
Per module
per junction
0
70
0
5
10 15 20 25 30 35 40 45 50
0
10
20
30
40
50
Average on-state current (A)
Total output current (A)
Fig.5 On-state voltage drop characteristics
Fig.6 Maximum non-repetitive surge current
550
1000
At Any Rated Load Condition And With
T =25°C
J
Rated VRRM Applied Following Surge
500
initial TJ = 125°C
450
400
350
300
250
200
150
@ 60Hz 0.0083 s
@ 50Hz 0.0100 s
T =125°C
J
100
10
1
Per junction
Per junction
1
10
100
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
lnstantaneous on-state voltage (V)
Number of equal amplitude half cycle
current pulses (N)
Page 5 of 7
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RoHS
NP500 Series
Nell High Power Products
Fig.7 Maximum non-repetitive surge current
600
500
400
300
200
100
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained
Initial TJ = 125°C, @50Hz
No Voltage Reapplied
Rated VRRM Reapplied
Per junction
0.01
0.1
1
Pulse train duration(s)
Fig.8 Thermal lmpedance ZthJC characteristics
10
Steady state value
RthJC = 1.00 K/W
(DC operation)
1
Per junction
0.1
0.01
0.0001
1
0.001
0.01
0.1
Square wave pulse duration (s)
Fig.9 Gate characteristics
100
10
1
(1) PGM = 10W, tp = 5ms
(2) PGM = 20W, tp = 25ms
(3) PGM = 50W, tp = 1ms
(4) PGM = 100W, tp = 1ms
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 10V, 20Ω,t <=1µs
r
b) Recommended load line for
rated di/dt : 10V, 65Ω, t <=1µs
r
(a)
(b)
(1)
(2)
(3)
(4)
VGD
Frequency Limited by PG(AV)
IGD
0.1
1
10
100
0.001
0.01
0.1
lnstantaneous gate current (A)
Page 6 of 7
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RoHS
NP500 Series
Nell High Power Products
D-19 PACK-PAK (Modified)
All dimensions in millimeters
Page 7 of 7
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