BC846BPN [NEXPERIA]

65 V, 100 mA NPN/PNP general-purpose transistorProduction;
BC846BPN
型号: BC846BPN
厂家: Nexperia    Nexperia
描述:

65 V, 100 mA NPN/PNP general-purpose transistorProduction

放大器 光电二极管 晶体管
文件: 总12页 (文件大小:298K)
中文:  中文翻译
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BC846BPN  
65 V, 100 mA NPN/PNP general-purpose transistor  
1 October 2022  
Product data sheet  
1. General description  
NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted  
Device (SMD) plastic package.  
NPN/NPN complement: BC846BS  
PNP/PNP complement: BC856BS  
2. Features and benefits  
Low collector capacitance  
Low collector-emitter saturation voltage  
Closely matched current gain  
Reduces number of components and board space  
No mutual interference between the transistors  
3. Applications  
General-purpose switching and amplification  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor; for the PNP transistor with negative polarity  
VCEO  
collector-emitter  
voltage  
open base  
-
-
-
-
65  
V
IC  
collector current  
DC current gain  
DC current gain  
100  
mA  
TR1 (NPN)  
hFE  
VCE = 5 V; IC = 2 mA; Tamb = 25 °C  
VCE = -5 V; IC = -2 mA; Tamb = 25 °C  
200  
200  
300  
290  
450  
450  
TR2 (PNP)  
hFE  
 
 
 
 
Nexperia  
BC846BPN  
65 V, 100 mA NPN/PNP general-purpose transistor  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol  
E1  
Description  
emitter TR1  
base TR1  
Simplified outline  
Graphic symbol  
C1  
B2 E2  
6
5
4
3
2
B1  
TR2  
3
C2  
collector TR2  
emitter TR2  
base TR2  
TR1  
E1  
4
E2  
1
2
5
B2  
B1 C2  
sym019  
TSSOP6 (SOT363)  
6
C1  
collector TR1  
6. Ordering information  
Table 3. Ordering information  
Type number  
Package  
Name  
Description  
Version  
BC846BPN  
TSSOP6  
plastic, surface-mounted package; 6 leads; 0.65 mm pitch; SOT363  
2.1 mm x 1.25 mm x 0.95 mm body  
7. Marking  
Table 4. Marking codes  
Type number  
Marking code[1]  
PJ%  
BC846BPN  
[1] % = placeholder for manufacturing site code  
8. Limiting values  
Table 5. Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol Parameter Conditions  
Per transistor; for the PNP transistor with negative polarity  
Min  
Max  
Unit  
VCBO  
VCEO  
VEBO  
IC  
collector-base voltage  
open emitter  
-
-
-
-
-
-
-
80  
V
collector-emitter voltage open base  
65  
V
emitter-base voltage  
collector current  
open collector  
6
V
100  
200  
200  
200  
mA  
mA  
mA  
mW  
ICM  
peak collector current  
peak base current  
total power dissipation  
single pulse; tp ≤ 1 ms  
Tamb ≤ 25 °C  
IBM  
Ptot  
[1]  
[1]  
Per device  
Ptot  
total power dissipation  
junction temperature  
ambient temperature  
storage temperature  
Tamb ≤ 25 °C  
-
300  
150  
150  
150  
mW  
°C  
Tj  
-
Tamb  
Tstg  
-55  
-65  
°C  
°C  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.  
©
BC846BPN  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
1 October 2022  
2 / 12  
 
 
 
 
 
Nexperia  
BC846BPN  
65 V, 100 mA NPN/PNP general-purpose transistor  
006aab618  
500  
tot  
P
(mW)  
400  
300  
200  
100  
0
- 75  
- 25  
25  
75  
125  
175  
(°C)  
T
amb  
FR4 PCB, single-sided, 35 μm copper, tin-plated and standard footprint  
Fig. 1. Per device: Power derating curve  
9. Thermal characteristics  
Table 6. Thermal characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
Rth(j-a)  
thermal resistance from in free air  
junction to ambient  
[1]  
-
-
-
-
625  
230  
K/W  
K/W  
Rth(j-sp)  
thermal resistance from  
junction to solder point  
Per device  
Rth(j-a)  
thermal resistance from in free air  
junction to ambient  
[1]  
-
-
416  
K/W  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
006aab619  
3
10  
δ = 1  
Z
th(j-a)  
(K/W)  
0.75  
0.33  
0.50  
0.20  
2
10  
0.10  
0.02  
0.05  
10  
0.01  
0
1
10  
- 5  
- 4  
- 3  
- 2  
- 1  
2
3
10  
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, single-sided, 35 μm copper, tin-plated and standard footprint  
Fig. 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;  
typical values  
©
BC846BPN  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
1 October 2022  
3 / 12  
 
 
Nexperia  
BC846BPN  
65 V, 100 mA NPN/PNP general-purpose transistor  
10. Characteristics  
Table 7. Characteristics  
Symbol  
TR1 (NPN)  
ICBO  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
collector-base cut-off  
current  
VCB = 50 V; IE = 0 A; Tamb = 25 °C  
VCB = 30 V; IE = 0 A; Tj = 150 °C  
VEB = 6 V; IC = 0 A; Tamb = 25 °C  
-
-
-
-
-
-
15  
5
nA  
µA  
nA  
IEBO  
hFE  
emitter-base cut-off  
current  
100  
DC current gain  
VCE = 5 V; IC = 10 µA; Tamb = 25 °C  
VCE = 5 V; IC = 2 mA; Tamb = 25 °C  
IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C  
IC = 100 mA; IB = 5 mA; Tamb = 25 °C  
-
280  
300  
55  
-
200  
450  
100  
300  
850  
-
VCEsat  
VBEsat  
VBE  
collector-emitter  
saturation voltage  
-
mV  
mV  
mV  
mV  
mV  
mV  
pF  
-
200  
755  
1000  
650  
-
base-emitter saturation IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C  
voltage  
-
IC = 100 mA; IB = 5 mA; Tamb = 25 °C  
-
base-emitter voltage  
VCE = 5 V; IC = 2 mA; Tamb = 25 °C  
VCE = 5 V; IC = 10 mA; Tamb = 25 °C  
580  
700  
770  
-
-
-
Cc  
Ce  
fT  
collector capacitance  
emitter capacitance  
transition frequency  
noise figure  
VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;  
Tamb = 25 °C  
1.9  
VEB = 0.5 V; IC = 0 A; ic = 0 A;  
f = 1 MHz; Tamb = 25 °C  
-
11  
-
-
-
-
-
pF  
VCE = 5 V; IC = 10 mA; f = 100 MHz;  
Tamb = 25 °C  
100  
MHz  
dB  
NF  
VCE = 5 V; IC = 0.2 mA; RS = 2 kΩ;  
f = 15.7 kHz; Tamb = 25 °C  
-
-
1.9  
3.1  
VCE = 5 V; IC = 0.2 mA; RS = 2 kΩ;  
f = 1 kHz; B = 200 Hz; Tamb = 25 °C  
dB  
TR2 (PNP)  
ICBO  
collector-base cut-off  
current  
VCB = -50 V; IE = 0 A; Tamb = 25 °C  
VCB = -30 V; IE = 0 A; Tj = 150 °C  
VEB = -6 V; IC = 0 A; Tamb = 25 °C  
-
-
-
-
-
-
-15  
-5  
nA  
nA  
nA  
IEBO  
hFE  
emitter-base cut-off  
current  
-100  
DC current gain  
VCE = -5 V; IC = -10 µA; Tamb = 25 °C  
VCE = -5 V; IC = -2 mA; Tamb = 25 °C  
IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C  
IC = -100 mA; IB = -5 mA; Tamb = 25 °C  
-
270  
290  
-55  
-
200  
450  
-100  
-300  
-850  
-
VCEsat  
VBEsat  
VBE  
collector-emitter  
saturation voltage  
-
mV  
mV  
mV  
mV  
mV  
mV  
pF  
-
-200  
-755  
-900  
-650  
-
base-emitter saturation IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C  
voltage  
-
IC = -100 mA; IB = -5 mA; Tamb = 25 °C  
-
base-emitter voltage  
VCE = -5 V; IC = -2 mA; Tamb = 25 °C  
VCE = -5 V; IC = -10 mA; Tamb = 25 °C  
-600  
-750  
-820  
-
-
-
Cc  
Ce  
fT  
collector capacitance  
emitter capacitance  
transition frequency  
VCB = -10 V; IE = 0 A; ie = 0 A;  
f = 1 MHz; Tamb = 25 °C  
2.3  
VEB = -0.5 V; IC = 0 A; ic = 0 A;  
f = 1 MHz; Tamb = 25 °C  
-
10  
-
-
-
pF  
VCE = -5 V; IC = -10 mA; f = 100 MHz;  
Tj = 25 °C  
100  
MHz  
©
BC846BPN  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
1 October 2022  
4 / 12  
 
Nexperia  
BC846BPN  
65 V, 100 mA NPN/PNP general-purpose transistor  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
NF  
noise figure  
VCE = -5 V; IC = -0.2 mA; RS = 2 kΩ;  
f = 15.7 kHz; Tamb = 25 °C  
-
1.6  
-
dB  
VCE = -5 V; IC = -0.2 mA; RS = 2 kΩ;  
f = 1 kHz; B = 200 Hz; Tamb = 25 °C  
-
2.9  
-
dB  
006aaa533  
006aaa532  
600  
0.20  
I
(mA) = 4.50  
4.05  
B
I
C
3.60  
(A)  
0.16  
h
FE  
3.15  
2.70  
2.25  
1.80  
1.35  
400  
(1)  
(2)  
(3)  
0.12  
0.08  
0.04  
0
0.90  
0.45  
200  
0
10  
- 2  
- 1  
2
3
10  
1
10  
10  
10  
(mA)  
0
2
4
6
8
10  
I
V
(V)  
CE  
C
VCE = 5 V  
Tamb = 25 °C  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = −55 °C  
Fig. 4. TR1 (NPN): Collector current as a function of  
collector-emitter voltage; typical values  
Fig. 3. TR1 (NPN): DC current gain as a function of  
collector current; typical values  
006aaa536  
006aaa534  
1
1.3  
V
BEsat  
(V)  
V
BE  
1.1  
(V)  
0.8  
0.9  
0.7  
0.5  
0.3  
0.1  
(1)  
(2)  
(3)  
0.6  
0.4  
- 1  
2
3
- 1  
2
3
10  
1
10  
10  
10  
10  
1
10  
10  
10  
I
(mA)  
I (mA)  
C
C
VCE = 5 V; Tamb = 25 °C  
IC/IB = 20  
(1) Tamb = −55 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
Fig. 5. TR1 (NPN): Base-emitter voltage as a function  
of collector current; typical values  
Fig. 6. TR1 (NPN): Base-emitter saturation voltage as a  
function of collector current; typical values  
©
BC846BPN  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
1 October 2022  
5 / 12  
Nexperia  
BC846BPN  
65 V, 100 mA NPN/PNP general-purpose transistor  
006aaa535  
006aaa537  
3
10  
10  
V
CEsat  
(V)  
f
T
(MHz)  
1
2
10  
- 1  
10  
(1)  
(2)  
(3)  
- 2  
10  
10  
- 1  
2
3
2
10  
1
10  
10  
10  
1
10  
10  
I
(mA)  
I (mA)  
C
C
IC/IB = 20  
VCE = 5 V; Tamb = 25 °C  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = −55 °C  
Fig. 8. TR1 (NPN): Transition frequency as a function  
of collector current; typical values  
Fig. 7. TR1 (NPN): Collector-emitter saturation voltage  
as a function of collector current; typical values  
006aab620  
006aaa539  
6
15  
C
e
(pF)  
13  
C
(pF)  
c
4
2
0
11  
9
7
5
0
2
4
6
8
10  
0
2
4
6
V
(V)  
V
(V)  
EB  
CB  
f = 1 MHz; Tamb = 25 °C  
f = 1 MHz; Tamb = 25 °C  
Fig. 9. TR1 (NPN): Collector capacitance as a function Fig. 10. TR1 (NPN): Emitter capacitance as a function of  
of collector-base voltage; typical values  
emitter-base voltage; typical values  
©
BC846BPN  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
1 October 2022  
6 / 12  
Nexperia  
BC846BPN  
65 V, 100 mA NPN/PNP general-purpose transistor  
006aaa541  
006aaa540  
600  
- 0.20  
I
(mA) = - 2.5  
- 2.25  
B
I
C
(A)  
h
FE  
- 2.0  
- 1.75  
- 1.5  
- 1.25  
- 0.16  
(1)  
(2)  
400  
- 0.12  
- 0.08  
- 0.04  
0
- 1.0  
- 0.75  
- 0.5  
200  
(3)  
- 0.25  
0
- 10  
- 2  
- 1  
2
3
- 10  
- 1  
- 10  
- 10  
- 10  
(mA)  
0
- 2  
- 4  
- 6  
- 8  
- 10  
(V)  
I
V
CE  
C
VCE = -5 V  
Tamb = 25 °C  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = −55 °C  
Fig. 12. TR2 (PNP): Collector current as a function of  
collector-emitter voltage; typical values  
Fig. 11. TR2 (PNP): DC current gain as a function of  
collector current; typical values  
006aaa544  
006aaa542  
- 1  
- 1.3  
V
BEsat  
(V)  
V
BE  
- 1.1  
- 0.9  
- 0.7  
- 0.5  
- 0.3  
- 0.1  
(V)  
- 0.8  
(1)  
(2)  
(3)  
- 0.6  
- 0.4  
- 1  
2
3
- 1  
2
3
- 10  
- 1  
- 10  
- 10  
- 10  
- 10  
- 1  
- 10  
- 10  
- 10  
I
(mA)  
I (mA)  
C
C
VCE = -5 V; Tamb = 25 °C  
IC/IB = 20  
(1) Tamb = −55 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
Fig. 13. TR2 (PNP): Base-emitter voltage as a function  
of collector current; typical values  
Fig. 14. TR2 (PNP): Base-emitter saturation voltage as a  
function of collector current; typical values  
©
BC846BPN  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
1 October 2022  
7 / 12  
Nexperia  
BC846BPN  
65 V, 100 mA NPN/PNP general-purpose transistor  
006aaa543  
006aaa545  
3
- 10  
10  
V
CEsat  
(V)  
f
T
(MHz)  
- 1  
2
10  
- 1  
(1)  
(2)  
(3)  
- 10  
- 2  
- 10  
10  
- 1  
2
3
2
- 10  
- 1  
- 10  
- 10  
- 10  
- 1  
- 10  
- 10  
I
(mA)  
I (mA)  
C
C
IC/IB = 20  
VCE = -5 V; Tamb = 25 °C  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = −55 °C  
Fig. 16. TR2 (PNP): Transition frequency as a function  
of collector current; typical values  
Fig. 15. TR2 (PNP): Collector-emitter saturation voltage  
as a function of collector current; typical values  
006aaa547  
006aab623  
10  
15  
C
c
C
E
(pF)  
(pF)  
13  
8
6
4
2
0
11  
9
7
5
0
- 2  
- 4  
- 6  
- 8  
- 10  
(V)  
0
-2  
-4  
-6  
V
CB  
V
(V)  
EB  
f = 1 MHz; Tamb = 25 °C  
f = 1 MHz; Tamb = 25 °C  
Fig. 17. TR2 (PNP): Collector capacitance as a function  
of collector-base voltage; typical values  
Fig. 18. TR2 (PNP): Emitter capacitance as a function of  
emitter-base voltage; typical values  
©
BC846BPN  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
1 October 2022  
8 / 12  
Nexperia  
BC846BPN  
65 V, 100 mA NPN/PNP general-purpose transistor  
11. Package outline  
2.2  
1.8  
1.1  
0.8  
0.45  
0.15  
6
5
4
2.2 1.35  
2.0 1.15  
pin 1  
index  
1
2
3
0.25  
0.10  
0.3  
0.2  
0.65  
1.3  
Dimensions in mm  
14-10-03  
Fig. 19. Package outline TSSOP6 (SOT363)  
12. Soldering  
2.65  
solder lands  
solder resist  
0.4 (2×)  
1.5  
2.35  
0.6  
(4×)  
0.5  
(4×)  
solder paste  
0.5  
(4×)  
0.6  
(2×)  
occupied area  
0.6  
(4×)  
Dimensions in mm  
1.8  
sot363_fr  
Fig. 20. Reflow soldering footprint for TSSOP6 (SOT363)  
1.5  
solder lands  
solder resist  
occupied area  
2.5  
0.3  
4.5  
1.5  
Dimensions in mm  
preferred transport  
direction during soldering  
1.3  
1.3  
2.45  
5.3  
sot363_fw  
Fig. 21. Wave soldering footprint for TSSOP6 (SOT363)  
©
BC846BPN  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
1 October 2022  
9 / 12  
 
 
Nexperia  
BC846BPN  
65 V, 100 mA NPN/PNP general-purpose transistor  
13. Revision history  
Table 8. Revision history  
Data sheet ID  
BC846BPN v.2  
Modifications:  
Release date  
20221001  
Data sheet status  
Change notice  
Supersedes  
Product data sheet  
-
BC846BPN v.1  
Product changed to non-automotive qualification. Please refer to nexperia.com for automotive  
(-Q) product alternative(s).  
Packing information is removed.  
BC846BPN v.1  
20090717  
Product data sheet  
-
-
©
BC846BPN  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
1 October 2022  
10 / 12  
 
Nexperia  
BC846BPN  
65 V, 100 mA NPN/PNP general-purpose transistor  
injury, death or severe property or environmental damage. Nexperia and its  
suppliers accept no liability for inclusion and/or use of Nexperia products in  
such equipment or applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
14. Legal information  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Data sheet status  
Document status Product  
Definition  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Nexperia makes no representation  
or warranty that such applications will be suitable for the specified use  
without further testing or modification.  
[1][2]  
status [3]  
Objective [short]  
data sheet  
Development  
This document contains data from  
the objective specification for  
product development.  
Customers are responsible for the design and operation of their applications  
and products using Nexperia products, and Nexperia accepts no liability for  
any assistance with applications or customer product design. It is customer’s  
sole responsibility to determine whether the Nexperia product is suitable  
and fit for the customer’s applications and products planned, as well as  
for the planned application and use of customer’s third party customer(s).  
Customers should provide appropriate design and operating safeguards to  
minimize the risks associated with their applications and products.  
Preliminary [short]  
data sheet  
Qualification  
Production  
This document contains data from  
the preliminary specification.  
Product [short]  
data sheet  
This document contains the product  
specification.  
[1] Please consult the most recently issued document before initiating or  
completing a design.  
Nexperia does not accept any liability related to any default, damage, costs  
or problem which is based on any weakness or default in the customer’s  
applications or products, or the application or use by customer’s third party  
customer(s). Customer is responsible for doing all necessary testing for the  
customer’s applications and products using Nexperia products in order to  
avoid a default of the applications and the products or of the application or  
use by customer’s third party customer(s). Nexperia does not accept any  
liability in this respect.  
[2] The term 'short data sheet' is explained in section "Definitions".  
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changed since this document was published and may differ in case of  
multiple devices. The latest product status information is available on  
the internet at https://www.nexperia.com.  
Definitions  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those  
given in the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
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internal review and subject to formal approval, which may result in  
modifications or additions. Nexperia does not give any representations or  
warranties as to the accuracy or completeness of information included herein  
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with the same product type number(s) and title. A short data sheet is  
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Limited warranty and liability — Information in this document is believed  
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Non-automotive qualified products — Unless this data sheet expressly  
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accepts no liability for inclusion and/or use of non-automotive qualified  
products in automotive equipment or applications.  
In no event shall Nexperia be liable for any indirect, incidental, punitive,  
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or replacement of any products or rework charges) whether or not such  
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In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards,  
customer (a) shall use the product without Nexperia’s warranty of the  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
Nexperia’s specifications such use shall be solely at customer’s own risk,  
and (c) customer fully indemnifies Nexperia for any liability, damages or failed  
product claims resulting from customer design and use of the product for  
automotive applications beyond Nexperia’s standard warranty and Nexperia’s  
product specifications.  
Notwithstanding any damages that customer might incur for any reason  
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for the products described herein shall be limited in accordance with the  
Terms and conditions of commercial sale of Nexperia.  
Translations — A non-English (translated) version of a document is for  
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Trademarks  
Suitability for use — Nexperia products are not designed, authorized or  
warranted to be suitable for use in life support, life-critical or safety-critical  
systems or equipment, nor in applications where failure or malfunction  
of an Nexperia product can reasonably be expected to result in personal  
Notice: All referenced brands, product names, service names and  
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©
BC846BPN  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
1 October 2022  
11 / 12  
 
Nexperia  
BC846BPN  
65 V, 100 mA NPN/PNP general-purpose transistor  
Contents  
1. General description......................................................1  
2. Features and benefits.................................................. 1  
3. Applications.................................................................. 1  
4. Quick reference data....................................................1  
5. Pinning information......................................................2  
6. Ordering information....................................................2  
7. Marking..........................................................................2  
8. Limiting values............................................................. 2  
9. Thermal characteristics............................................... 3  
10. Characteristics............................................................4  
11. Package outline.......................................................... 9  
12. Soldering..................................................................... 9  
13. Revision history........................................................10  
14. Legal information......................................................11  
© Nexperia B.V. 2022. All rights reserved  
For more information, please visit: http://www.nexperia.com  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
Date of release: 1 October 2022  
©
BC846BPN  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
1 October 2022  
12 / 12  

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