BUK9609-75A_技术文档

BUK9609-75A

N-channel TrenchMOS logic level FET

Rev. 4 — 30 August 2011

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

 Low conduction losses due to low

 Suitable for logic level gate drive

on-state resistance

sources

 Q101 compliant

 Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

 12 V, 24 V and 42 V loads

 Motors, lamps and solenoids

 Automotive and general purpose

power switching

1.4 Quick reference data

Table 1.

Quick reference data

Conditions

Symbol Parameter

Min Typ Max Unit

V_DS

I_D

drain-source

voltage

T_j≥ 25 °C; T_j≤ 175 °C

-

75

V

[1]

drain current

V_GS= 5 V; T_mb= 25 °C;

see Figure 3; see Figure 1

75

A

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

230

W

Static characteristics

R_DSon

drain-source

on-state resistance

V_GS= 4.5 V; I_D= 25 A; T_j= 25 °C

V_GS= 10 V; I_D= 25 A; T_j= 25 °C

-

9.95 mΩ

7.23 8.5

mΩ

V_GS= 5 V; I_D= 25 A; T_j= 25 °C;

see Figure 13; see Figure 14

7.6

9

Avalanche ruggedness

E_DS(AL)Snon-repetitive

drain-source

I_D= 75 A; V_sup≤ 75 V;

R_GS= 50 Ω; V_GS= 5 V;

T_j(init)= 25 °C; unclamped

-

562 mJ

avalanche energy

[1] Continuous current is limited by package.

BUK9609-75A

Nexperia

N-channel TrenchMOS logic level FET

2. Pinning information

Table 2.

Pinning information

Symbol Description

1

Simplified outline

Graphic symbol

G

D

S

D

gate

mb

D

2

drain

3

source

G

mb

mounting base; connected to drain

mbb076

S

2

1

3

SOT404 (D2PAK)

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BUK9609-75A

D2PAK

plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404

(one lead cropped)

4. Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Conditions

Min

Max

75

Unit

V

drain-source voltage

drain-gate voltage

gate-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

R_GS= 20 kΩ

-

V_DGR

V_GS

-

75

V

-10

10

V

[1]

I_D

T_mb= 100 °C; V_GS= 5 V; see Figure 1

-

75

A

T_mb= 25 °C; V_GS= 5 V; see Figure 3;

see Figure 1

75

A

I_DM

peak drain current

T_mb= 25 °C; pulsed; t_p≤ 10 µs;

-

440

A

see Figure 3

P_tot

T_stg

T_j

total power dissipation

storage temperature

junction temperature

peak gate-source voltage

T_mb= 25 °C; see Figure 2

-

230

175

15

W

°C

V

-55

-15

V_GSM

pulsed; t_p≤ 50 µs

Source-drain diode

[1]

I_S

source current

peak source current

T_mb= 25 °C

-

75

A

I_SM

pulsed; t_p≤ 10 µs; T_mb= 25 °C

440

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-source

avalanche energy

I_D= 75 A; V_sup≤ 75 V; R_GS= 50 Ω;

V_GS= 5 V; T_j(init)= 25 °C; unclamped

-

562

mJ

[1] Continuous current is limited by package.

BUK9609-75A

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Product data sheet

Rev. 4 — 30 August 2011

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BUK9609-75A

Nexperia

N-channel TrenchMOS logic level FET

03aa24

03na19

120

I

P

der

(%)

80

40

0

50

100

150

200

0

50

100

150

200

T

(°C)

T

(°C)

mb

Fig 1. Normalized continuous drain current as a

function of mounting base temperature

Fig 2. Normalized total power dissipation as a

function of mounting base temperature

03nb44

10³

I_D

(A)

Limit R_DSon= V_DS/ I_D

t =10

p

s

μ

10²

100

s

μ

10

1

1 ms

DC

10 ms

100 ms

10^-1

1

10

10²

10³

V _DS(V)

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

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Product data sheet

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Nexperia

N-channel TrenchMOS logic level FET

5. Thermal characteristics

Table 5.

Symbol Parameter

R_th(j-mb)thermal resistance from junction to

Thermal characteristics

Conditions

Min

Typ

Max

Unit

see Figure 4

-

0.65

K/W

mounting base

R_th(j-a)

thermal resistance from junction to

ambient

minimum footprint ; mounted on a

printed-circuit board

-

50

-

K/W

03nb45

1

Z

th(j-mb)

δ = 0.5

(K/W)

0.2

−1

10

0.1

0.05

0.02

t

p

P

δ =

−2

−3

T

Single Shot

t

p

T

−6

−5

−4

−3

−2

−1

10

1

t

(s)

p

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

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Product data sheet

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Nexperia

N-channel TrenchMOS logic level FET

6. Characteristics

Table 6.

Symbol

Characteristics

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V_(BR)DSSdrain-source breakdown

I_D= 0.25 mA; V_GS= 0 V; T_j= 25 °C

I_D= 0.25 mA; V_GS= 0 V; T_j= -55 °C

75

70

1

-

V

voltage

-

V_GS(th)

gate-source threshold

voltage

I_D= 1 mA; V_DS= V_GS; T_j= 25 °C;

see Figure 12

1.5

2

I_D= 1 mA; V_DS= V_GS; T_j= 175 °C;

see Figure 12

0.5

-

V

I_D= 1 mA; V_DS= V_GS; T_j= -55 °C;

see Figure 12

2.3

I_DSS

drain leakage current

gate leakage current

V_DS= 75 V; V_GS= 0 V; T_j= 175 °C

V_DS= 75 V; V_GS= 0 V; T_j= 25 °C

V_GS= 10 V; V_DS= 0 V; T_j= 25 °C

V_GS= -10 V; V_DS= 0 V; T_j= 25 °C

V_GS= 4.5 V; I_D= 25 A; T_j= 25 °C

-

500

10

µA

nA

0.05

I_GSS

2

-

100

9.95

18.9

nA

R_DSon

drain-source on-state

resistance

mΩ

V_GS= 5 V; I_D= 25 A; T_j= 175 °C;

see Figure 13; see Figure 14

-

V_GS= 10 V; I_D= 25 A; T_j= 25 °C

-

7.23

7.6

8.5

9

mΩ

V_GS= 5 V; I_D= 25 A; T_j= 25 °C;

see Figure 13; see Figure 14

Dynamic characteristics

C_iss

C_oss

C_rss

t_d(on)

t_r

input capacitance

V_GS= 0 V; V_DS= 25 V; f = 1 MHz;

T_j= 25 °C; see Figure 8

-

6631 8840 pF

output capacitance

reverse transfer capacitance

turn-on delay time

rise time

905

610

47

1090 pF

840

pF

ns

nH

V_DS= 30 V; R_L= 1.2 Ω; V_GS= 5 V;

R_G(ext)= 10 Ω; T_j= 25 °C

-

185

424

226

2.5

t_d(off)

t_f

turn-off delay time

fall time

L_D

internal drain inductance

from upper edge of drain mounting

base to centre of die ; T_j= 25 °C

from drain lead 6 mm from package to

centre of die ; T_j= 25 °C

-

4.5

7.5

-

nH

L_S

internal source inductance

from source lead to source bond pad ;

T_j= 25 °C

Source-drain diode

V_SD

source-drain voltage

I_S= 25 A; V_GS= 0 V; T_j= 25 °C;

see Figure 15

-

0.85

1.2

V

t_rr

reverse recovery time

recovered charge

I_S= 20 A; dI_S/dt = -100 A/µs;

V_GS= -10 V; V_DS= 30 V; T_j= 25 °C

-

70.3

213

-

ns

Q_r

nC

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Product data sheet

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BUK9609-75A

Nexperia

N-channel TrenchMOS logic level FET

03nb41

03nb40

400

20

18

16

14

12

10

8

I

R

(mΩ)

D

DSon

(A)

10

8

7

6

5

350

V

(V) = 4

GS

300

250

200

150

100

50

3

6

2.2

0

4

2

4

6

8

10

(V)

2

3

4

5

6

7

V

8

(V)

V

DS

GS

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 6. Drain-source on-state resistance as a function

of gate-source voltage; typical values

03aa36

03nb43

10^-1

16000

I_D

C (pF)

(A)

14000

12000

10000

8000

Ciss

10^-2

10^-3

Crss

min

typ

max

Coss

10^-4

10^-5

10^-6

6000

4000

2000

0

−2

−1

2

0

1

2

3

10

1

10

V

_GS(V)

V

(V)

DS

Fig 7. Sub-threshold drain current as a function of

gate-source voltage

Fig 8. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

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Product data sheet

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BUK9609-75A

Nexperia

N-channel TrenchMOS logic level FET

03nb39

03nb37

120

5

4.5

4

V

(V)

GS

I

D

(A)

V

DD

= 14 V

100

80

60

40

20

0

3.5

3

V

= 60 V

DD

2.5

2

1.5

1

T

= 175 °C

T = 25 °C

j

0.5

0

0.0

1.0

2.0

3.0

4.0

0

50

100

150

V

(V)

GS

Q

(nC)

G

Fig 9. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 10. Gate-source voltage as a function of gate

charge; typical values

03aa33

03nb38

2.5

140

g

(S)

fs

V_GS(th)

(V)

120

100

80

60

40

20

0

2

max

1.5

1

typ

min

0.5

0

20

40

60

80

100

-60

0

60

120

180

T ( C)

°

I

D

(A)

j

Fig 11. Forward transconductance as a function of

drain current; typical values

Fig 12. Gate-source threshold voltage as a function of

junction temperature

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Product data sheet

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BUK9609-75A

Nexperia

N-channel TrenchMOS logic level FET

03nb25

03nb42

2.4

1.6

0.8

0

20

V

(V) = 3

3.2

3.4

4

GS

R

DSon

(mΩ)

a

3.6 3.8

15

10

6

5

0

50

100

150

200

250

300

350

(A)

−60

0

60

120

180

T (°C)

I

j

D

Fig 13. Drain-source on-state resistance as a function

of drain current; typical values

Fig 14. Normalized drain-source on-state resistance

factor as a function of junction temperature

03nb36

120

I

S

(A)

100

80

60

40

T = 175 °C

j

20

0

T = 25 °C

j

0.0

0.2

0.4

0.6

0.8

1.0

(V)

V

SD

Fig 15. Reverse diode current as a function of reverse diode voltage; typical values

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Product data sheet

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Nexperia

N-channel TrenchMOS logic level FET

7. Package outline

Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)

SOT404

A

E

1

mounting

base

D

1

D

H

D

2

L

p

1

3

c

b

e

Q

0

2.5

5 mm

scale

DIMENSIONS (mm are the original dimensions)

D

E

A

b

UNIT

c

D

e

L

H

Q

1

p

D

max.

4.50

4.10

1.40

1.27

0.85

0.60

0.64

0.46

1.60

1.20

10.30

9.70

2.90 15.80 2.60

2.10 14.80 2.20

mm

11

2.54

REFERENCES

JEDEC JEITA

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

05-02-11

06-03-16

SOT404

Fig 16. Package outline SOT404 (D2PAK)

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Product data sheet

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N-channel TrenchMOS logic level FET

8. Revision history

Table 7.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

BUK9609-75A v.4

Modifications:

20110830

Product data sheet

-

BUK9609-75A v.3

• Various changes to content.

20080922 Product data sheet

BUK9609-75A v.3

-

BUK9509_9609_75A v.2

BUK9609-75A

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N-channel TrenchMOS logic level FET

9. Legal information

9.1 Data sheet status

Document status ^{[1] [2]}

Product status ^[3]

Development

Definition

Objective [short] data sheet

This document contains data from the objective specification for product development.

This document contains data from the preliminary specification.

This document contains the product specification.

Preliminary [short] data sheet Qualification

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term 'short data sheet' is explained in section "Definitions".

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nexperia.com.

Right to make changes — Nexperia reserves the right to make

9.2 Definitions

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

Nexperia does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

no liability for the consequences of use of such information.

Suitability for use in automotive applications — This Nexperia

product has been qualified for use in automotive

applications. The product is not designed, authorized or warranted to be

suitable for use in medical, military, aircraft, space or life support equipment,

nor in applications where failure or malfunction of a Nexperia

product can reasonably be expected to result in personal injury, death or

severe property or environmental damage. Nexperia accepts no

liability for inclusion and/or use of Nexperia products in such

equipment or applications and therefore such inclusion and/or use is at the

customer’s own risk.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Nexperia sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Nexperia and its customer, unless Nexperia and

Customers are responsible for the design and operation of their applications

and products using Nexperia products, and Nexperia

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the Nexperia product is

deemed to offer functions and qualities beyond those described in the

Product data sheet.

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the Nexperia

product is suitable and fit for the customer’s applications and

products planned, as well as for the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

9.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, Nexperia does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

Nexperia does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using Nexperia

products in order to avoid a default of the applications and

In no event shall Nexperia be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

the products or of the application or use by customer’s third party

customer(s). Nexperia does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Notwithstanding any damages that customer might incur for any reason

whatsoever, Nexperia’s aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of Nexperia.

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N-channel TrenchMOS logic level FET

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Export control — This document as well as the item(s) described herein may

be subject to export control regulations. Export might require a prior

authorization from national authorities.

Terms and conditions of commercial sale — Nexperia

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nexperia.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. Nexperia hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of Nexperia products by customer.

9.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

10. Contact information

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

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Product data sheet

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N-channel TrenchMOS logic level FET

11. Contents

1

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1

1.2

1.3

1.4

General description . . . . . . . . . . . . . . . . . . . . . .1

Features and benefits. . . . . . . . . . . . . . . . . . . . .1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2

3

4

5

6

7

8

Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

Ordering information. . . . . . . . . . . . . . . . . . . . . .2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2

Thermal characteristics . . . . . . . . . . . . . . . . . . .4

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9

Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10

9

Legal information. . . . . . . . . . . . . . . . . . . . . . . .11

Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11

Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .11

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.1

9.2

9.3

9.4

10

Contact information. . . . . . . . . . . . . . . . . . . . . .12

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 30 August 2011


型号：	BUK9609-75A
厂家：	Nexperia
描述：	N-channel TrenchMOS logic level FETProduction 开关脉冲晶体管
文件：	总13页 (文件大小：751K)
中文：	中文翻译
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