BUK9628-100A_技术文档

BUK9628-100A

N-channel TrenchMOS logic level FET

Rev. 02 — 26 April 2011

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

AEC Q101 compliant

Low conduction losses due to low

on-state resistance

1.3 Applications

Automotive and general purpose

power switching

1.4 Quick reference data

Table 1.

Quick reference data

Symbol Parameter

Conditions

drain-source voltage T_j≥ 25 °C; T_j≤ 175 °C

Min Typ Max Unit

V_DS

I_D

-

100

49

V

drain current

T_mb= 25 °C

A

P_tot

total power dissipation

166

W

Static characteristics

R_DSon

drain-source on-state V_GS= 5 V; I_D= 25 A; T_j= 25 °C

-

18.5 28

mΩ

resistance

V_GS= 10 V; I_D= 25 A; T_j= 25 °C

17

27

Avalanche ruggedness

E_DS(AL)Snon-repetitive

drain-source

I_D= 30 A; V_sup≤ 25 V;

_GS= 50 Ω; V_GS= 5 V;

T_j(init)= 25 °C; unclamped

-

45

mJ

R

avalanche energy

BUK9628-100A

Nexperia

N-channel TrenchMOS logic level FET

2. Pinning information

Table 2.

Pinning information

Symbol Description

1

Simplified outline

Graphic symbol

G

D

S

D

gate

mb

D

2

drain

3

source

G

mb

mounting base; connected to drain

mbb076

S

2

1

3

SOT404 (D2PAK)

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BUK9628-100A

D2PAK

plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404

(one lead cropped)

4. Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Conditions

Min

Max

100

10

Unit

V

drain-source voltage

drain-gate voltage

gate-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

R_GS= 20 kΩ

-

V_DGR

V_GS

-

V

-10

-

V

I_D

T_mb= 25 °C

49

A

T_mb= 100 °C

T_mb= 25 °C; pulsed

T_mb= 25 °C

-

34

A

I_DM

P_tot

T_stg

T_j

peak drain current

-

195

166

175

15

A

total power dissipation

storage temperature

junction temperature

peak gate-source voltage

-

W

°C

V

-55

-15

V_GSM

pulsed; t_p≤ 50 µs

Source-drain diode

I_S

source current

peak source current

T_mb= 25 °C

-

49

A

I_SM

pulsed; T_mb= 25 °C

195

Avalanche ruggedness

E_DS(AL)S

non-repetitive drain-source avalanche

energy

I_D= 30 A; V_sup≤ 25 V; R_GS= 50 Ω;

-

45

mJ

V_GS= 5 V; T_j(init)= 25 °C; unclamped

BUK9628-100A

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Product data sheet

Rev. 02 — 26 April 2011

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BUK9628-100A

Nexperia

N-channel TrenchMOS logic level FET

003aaf220

003aaf221

100

P

der

I

D

(%)

80

(%)

80

60

40

20

0

60

40

20

0

40

80

120

160

200

(°C)

0

40

80

120

160

T

200

(°C)

mb

T

mb

V_GS≥ 5 V

Fig 1. Normalized total power dissipation as a

function of mounting base temperature

Fig 2. Normalized continuous drain current as a

function of mounting base temperature

003aaf235

003aaf222

3

10

120

WDSS

I

DM

(A)

(%)

100

R

DS(on)

= V / I

DS D

2

10

t

= 1 μs

80

60

40

20

0

p

10 μs

100 μs

1 ms

10

1

D.C.

10

10 ms

100 ms

2

3

1

10

20

60

100

140

180

T

(°C)

V

DS

(V)

mb

T

_mb= 25 °C; I_DMis single pulse

Fig 3. Safe operating area; continuous and peak drain

currents as a function of drain-source voltage

Fig 4. Normalised drain-source non-repetitive

avalanche energy as a function of

mounting-base temperature

BUK9628-100A

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Product data sheet

Rev. 02 — 26 April 2011

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BUK9628-100A

Nexperia

N-channel TrenchMOS logic level FET

003aaf236

2

10

I

AS

(A)

25 °C

10

T prior to avalanche150 °C

j

1

-3

-2

-1

10

1

10

t

AV

(ms)

unclamped inductive load

Fig 5. Single-shot avalanche rating; avalanche current as a function of avalanche period

5. Thermal characteristics

Table 5.

Symbol

R_th(j-mb)

Thermal characteristics

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from junction to

mounting base

-

0.9

K/W

R_th(j-a)

thermal resistance from junction to

ambient

minimum footprint ; FR4 board

-

50

-

K/W

003aaf223

1

δ = 0.5

Z

th(j-mb)

(K/W)

0.2

0.1

−1

−2

−3

10

0.05

0.02

t

p

P

δ =

T

0

10

t

p

T

−6

−5

−4

−3

−2

−1

10

1

10

(s)

t

p

Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse duration

BUK9628-100A

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©

Product data sheet

Rev. 02 — 26 April 2011

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BUK9628-100A

Nexperia

N-channel TrenchMOS logic level FET

6. Characteristics

Table 6.

Symbol

Characteristics

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V_(BR)DSSdrain-source breakdown

voltage

I_D= 0.25 mA; V_GS= 0 V; T_j= 25 °C

I_D= 0.25 mA; V_GS= 0 V; T_j= -55 °C

100

-

V

89

-

V

V_GS(th)

gate-source threshold voltage I_D= 1 mA; V_DS= V_GS; T_j= 25 °C

I_D= 1 mA; V_DS= V_GS; T_j= 175 °C

1

1.5

2

V

0.5

-

V

I_D= 1 mA; V_DS= V_GS; T_j= -55 °C

-

2.3

10

500

100

28

70

27

31

V

I_DSS

drain leakage current

gate leakage current

V_DS= 100 V; V_GS= 0 V; T_j= 25 °C

V_DS= 100 V; V_GS= 0 V; T_j= 175 °C

V_GS= 10 V; V_DS= 0 V; T_j= 25 °C

V_GS= -10 V; V_DS= 0 V; T_j= 25 °C

V_GS= 5 V; I_D= 25 A; T_j= 25 °C

V_GS= 5 V; I_D= 25 A; T_j= 175 °C

V_GS= 10 V; I_D= 25 A; T_j= 25 °C

V_GS= 4.5 V; I_D= 25 A; T_j= 25 °C

0.05

-

µA

nA

mΩ

I_GSS

2

R_DSon

drain-source on-state

resistance

18.5

-

17

18.8

Dynamic characteristics

C_iss

C_oss

C_rss

t_d(on)

t_r

input capacitance

V_GS= 0 V; V_DS= 25 V; f = 1 MHz;

T_j= 25 °C

-

3220 4293 pF

output capacitance

reverse transfer capacitance

turn-on delay time

rise time

315

187

11

378

256

16

pF

ns

nH

V_DS= 30 V; R_L= 1.2 Ω; V_GS= 5 V;

R_G(ext)= 10 Ω; T_j= 25 °C

58

87

t_d(off)

t_f

turn-off delay time

fall time

250

106

4.5

350

148

-

L_D

internal drain inductance

measured from drain lead 6 mm from

package to centre of die ; T_j= 25 °C

measured from upper edge of drain tab

to centre of die ; T_j= 25 °C

-

2.5

7.5

-

nH

L_S

internal source inductance

measured from source lead to source

bond pad ; T_j= 25 °C

Source-drain diode

V_SD

source-drain voltage

I_S= 25 A; V_GS= 0 V; T_j= 25 °C

I_S= 49 A; V_GS= 0 V; T_j= 25 °C

-

0.85

1.1

1.2

V

-

V

t_rr

reverse recovery time

recovered charge

I_S= 49 A; dI_S/dt = -100 A/µs;

V_GS= -10 V; V_DS= 30 V; T_j= 25 °C

63

ns

µC

Q_r

0.22

BUK9628-100A

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Product data sheet

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BUK9628-100A

Nexperia

N-channel TrenchMOS logic level FET

003aaf224

003aaf225

60

65

V

GS

(V) = 10.0

5.0

3.0

R

DS(on)

(mΩ)

I

D

3.6

3.4

4.0

3.8

(A)

55

40

3.2

3.0

45

35

25

3.2

3.6

2.8

2.6

3.8

3.4

4.0

20

0

5.0

2.4

2.2

0

2

4

6

8

10

(V)

5

25

45

65

V

DS

I (A)

D

T_j= 25 °C

Fig 7. Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 8. Drain-source on-state resistance as a function

of drain current; typical values

003aaf226

003aaf227

23

25

I

D

R

DS(on)

(A)

20

(mΩ)

21

15

10

5

19

17

15

T = 175 °C

j

T = 25 °C

j

0

3

5

7

9

11

0

2

4

6

V

(V)

V

GS

(V)

GS

T_j= 25 °C; I_D= 25 A

V_DS> I_Dx R_DSon

Fig 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

Fig 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

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Product data sheet

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BUK9628-100A

Nexperia

N-channel TrenchMOS logic level FET

003aaf228

003aaf229

100

fs

(S)

80

3.0

2.5

2.0

1.5

1.0

0.5

g

a

60

40

20

0

20

40

60

80

100

-100

0

100

200

I

D

(A)

T

(°C)

mb

V_DS> I_Dx R_DSon

I_D= 25 A; V_GS= 5 V

Fig 11. Forward transconductance as a function of

drain current; typical values

Fig 12. Normalized drain-source on-state resistance

factor as a function of junction temperature

003aaf230

003aaf231

-1

2.5

10

V

I

D

GS(th)

(V)

(A)

10

maximum

-2

-3

-4

-5

-6

2.0

1.5

1.0

0.5

0

typical

10

2 %

typical 98 %

minimum

-100

0

100

200

0

1

2

3

T (°C)

V

(V)

j

GS

I_D= 1 mA; V_DS= V_GS

T_j= 25 °C; V_DS= V_GS

Fig 13. Gate-source threshold voltage as a function of

junction temperature

Fig 14. Sub-threshold drain current as a function of

gate-source voltage

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Product data sheet

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BUK9628-100A

Nexperia

N-channel TrenchMOS logic level FET

003aaf232

003aaf233

8

5

4

3

2

1

0

V

GS

C

(pF)

C

iss

(V)

V

= 14 V

DS

6

4

2

0

V

= 44 V

DS

C

oss

rss

-2

-1

2

10

1

10

0

20

40

60

V

(V)

Q (nC)

G

DS

V_GS= 0 V; f = 1 MHz

T_j= 25 °C; I_D= 25 A

Fig 15. Input, output and reverse transfer capacitances Fig 16. Gate-source voltage as a function of gate

as a function of drain-source voltage; typical

values

charge; typical values

003aaf234

100

I

F

(A)

80

60

40

20

0

T = 175 °C

T = 25 °C

j

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

(V)

V

SDS

V_GS= 0 V

Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values

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Product data sheet

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BUK9628-100A

Nexperia

N-channel TrenchMOS logic level FET

7. Package outline

Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)

SOT404

A

E

1

mounting

base

D

1

D

H

D

2

L

p

1

3

c

b

e

Q

0

2.5

5 mm

scale

DIMENSIONS (mm are the original dimensions)

D

E

A

b

UNIT

c

D

e

L

H

Q

1

p

D

max.

4.50

4.10

1.40

1.27

0.85

0.60

0.64

0.46

1.60

1.20

10.30

9.70

2.90 15.80 2.60

2.10 14.80 2.20

mm

11

2.54

REFERENCES

JEDEC JEITA

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

05-02-11

06-03-16

SOT404

Fig 18. Package outline SOT404 (D2PAK)

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Product data sheet

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N-channel TrenchMOS logic level FET

8. Revision history

Table 7.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

BUK9628-100A v.2

Modifications:

20110426

Product data sheet

-

BUK9528_9628-100A v.1

• The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Type number BUK9628-100A separated from data sheet BUK9528_9628-100A v.1.

BUK9528_9628-100A v.1

20000301

Product specification

-

BUK9628-100A

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Product data sheet

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BUK9628-100A

Nexperia

N-channel TrenchMOS logic level FET

9. Legal information

9.1 Data sheet status

Document status ^{[1] [2]}

Product status ^[3]

Development

Definition

Objective [short] data sheet

This document contains data from the objective specification for product development.

This document contains data from the preliminary specification.

This document contains the product specification.

Preliminary [short] data sheet Qualification

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term 'short data sheet' is explained in section "Definitions".

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nexperia.com.

Right to make changes — Nexperia reserves the right to make

9.2 Definitions

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

Nexperia does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

no liability for the consequences of use of such information.

Suitability for use in automotive applications — This Nexperia

product has been qualified for use in automotive

applications. The product is not designed, authorized or warranted to be

suitable for use in medical, military, aircraft, space or life support equipment,

nor in applications where failure or malfunction of a Nexperia

product can reasonably be expected to result in personal injury, death or

severe property or environmental damage. Nexperia accepts no

liability for inclusion and/or use of Nexperia products in such

equipment or applications and therefore such inclusion and/or use is at the

customer’s own risk.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Nexperia sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Nexperia and its customer, unless Nexperia and

Customers are responsible for the design and operation of their applications

and products using Nexperia products, and Nexperia

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the Nexperia product is

deemed to offer functions and qualities beyond those described in the

Product data sheet.

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the Nexperia

product is suitable and fit for the customer’s applications and

products planned, as well as for the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

9.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, Nexperia does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

Nexperia does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using Nexperia

products in order to avoid a default of the applications and

In no event shall Nexperia be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

the products or of the application or use by customer’s third party

customer(s). Nexperia does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Notwithstanding any damages that customer might incur for any reason

whatsoever, Nexperia’s aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of Nexperia.

BUK9628-100A

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Product data sheet

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11 of 13

BUK9628-100A

Nexperia

N-channel TrenchMOS logic level FET

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Export control — This document as well as the item(s) described herein may

be subject to export control regulations. Export might require a prior

authorization from national authorities.

Terms and conditions of commercial sale — Nexperia

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nexperia.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. Nexperia hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of Nexperia products by customer.

9.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

10. Contact information

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

BUK9628-100A

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Product data sheet

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Nexperia

N-channel TrenchMOS logic level FET

11. Contents

1

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1

1.2

1.3

1.4

General description . . . . . . . . . . . . . . . . . . . . . .1

Features and benefits. . . . . . . . . . . . . . . . . . . . .1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2

3

4

5

6

7

8

Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

Ordering information. . . . . . . . . . . . . . . . . . . . . .2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2

Thermal characteristics . . . . . . . . . . . . . . . . . . .4

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9

Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10

9

Legal information. . . . . . . . . . . . . . . . . . . . . . . .11

Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11

Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .11

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.1

9.2

9.3

9.4

10

Contact information. . . . . . . . . . . . . . . . . . . . . .12

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 26 April 2011


型号：	BUK9628-100A
厂家：	Nexperia
描述：	N-channel TrenchMOS logic level FETProduction 开关脉冲晶体管
文件：	总13页 (文件大小：1288K)
中文：	中文翻译
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BUK9628-100A [NEXPERIA]

相关型号：

BUK9628-100A,118

BUK9628-100A/T3

BUK9628-55

BUK9628-55-T

BUK9628-55/T3

BUK9628-55A

BUK9628-55A,118

BUK9628-55T/R

BUK9629-100B

BUK9629-100B

BUK9629-100B,118

BUK962R2-40C