PBSS4160QA-Q [NEXPERIA]
60 V, 1 A NPN low VCEsat transistorProduction;型号: | PBSS4160QA-Q |
厂家: | Nexperia |
描述: | 60 V, 1 A NPN low VCEsat transistorProduction |
文件: | 总14页 (文件大小:291K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PBSS4160QA-Q
60 V, 1 A NPN low VCEsat transistor
9 March 2023
Product data sheet
1. General description
NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted
Device (SMD) plastic package with visible and solderable side pads.
2. Features and benefits
•
Very low collector-emitter saturation voltage VCEsat
•
•
•
•
•
•
High collector current capability IC and ICM
High collector current gain hFE at high IC
High energy efficiency due to less heat generation
Reduced Printed-Circuit Board (PCB) area requirements
Solderable side pads
Qualified according to AEC-Q101 and recommended for use in automotive applications
3. Applications
•
•
•
•
•
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
60
V
IC
collector current
-
-
-
-
1
A
ICM
peak collector current single pulse; tp ≤ 1 ms
-
1.5
235
A
RCEsat
collector-emitter
saturation resistance
IC = 1 A; IB = 0.1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
170
mΩ
Nexperia
PBSS4160QA-Q
60 V, 1 A NPN low VCEsat transistor
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
base
Simplified outline
Graphic symbol
B
E
C
C
3
C
2
emitter
4
3
collector
collector
B
4
1
2
E
sym123
Transparent top view
DFN1010D-3 (SOT1215)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PBSS4160QA-Q
DFN1010D-3 plastic, leadless thermal enhanced ultra thin small outline SOT1215
package with side-wettable flanks (SWF); 3 terminals; 0.75
mm pitch; 1.1 mm x 1 mm x 0.37 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code
11
00
10
PBSS4160QA-Q
READING
DIRECTION
MARKING CODE
(EXAMPLE)
YEAR DATE
CODE
VENDOR CODE
PIN 1
INDICATION MARK
MARK-FREE AREA
READING EXAMPLE:
11
01
10
aaa-008041
Fig. 1. DFN1010D-3 (SOT1215) binary marking code description
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PBSS4160QA-Q
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Product data sheet
9 March 2023
2 / 14
Nexperia
PBSS4160QA-Q
60 V, 1 A NPN low VCEsat transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
Min
Max
60
Unit
V
collector-base voltage
open emitter
-
collector-emitter voltage open base
-
60
V
emitter-base voltage
collector current
open collector
-
7
V
-
1
A
ICM
peak collector current
base current
single pulse; tp ≤ 1 ms
-
1.5
0.3
1
A
IB
-
A
IBM
peak base current
total power dissipation
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
-
A
Ptot
[1]
[2]
[3]
[4]
[5]
-
325
600
740
540
1000
150
150
150
mW
mW
mW
mW
mW
°C
°C
°C
-
-
-
-
Tj
junction temperature
ambient temperature
storage temperature
-
Tamb
Tstg
-55
-65
[1] Device mounted on an FR4 PCB single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated mounting pad for collector 1 cm2.
aaa-007844
1.25
P
tot
(W)
(1)
(2)
1.00
0.75
0.50
0.25
0
(3)
(4)
(5)
-75
-25
25
75
125
175
(°C)
T
amb
(1) FR4 PCB, 4-layer copper, 1 cm2
(2) FR4 PCB, single-sided copper, 6 cm2
(3) FR4 PCB, single-sided copper, 1 cm2
(4) FR4 PCB, 4-layer copper, standard footprint
(5) FR4 PCB, single-sided copper, standard footprint
Fig. 2. Power derating curves
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PBSS4160QA-Q
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Product data sheet
9 March 2023
3 / 14
Nexperia
PBSS4160QA-Q
60 V, 1 A NPN low VCEsat transistor
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
385
209
169
232
125
Unit
K/W
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[2]
[3]
[4]
[5]
-
-
-
-
-
-
-
-
-
-
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated mounting pad for collector 1 cm2.
aaa-007845
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.33
0.5
0.2
2
10
0.1
0.05
0.01
10
0.02
0
1
-5
10
-4
-3
-2
10
-1
2
3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, single-sided copper, standard footprint
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-007846
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
2
10
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
-1
10
-5
-4
-3
-2
10
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, single-sided copper, 1 cm2
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PBSS4160QA-Q
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Nexperia B.V. 2023. All rights reserved
Product data sheet
9 March 2023
4 / 14
Nexperia
PBSS4160QA-Q
60 V, 1 A NPN low VCEsat transistor
aaa-007847
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
0.75
0.5
10
0.33
0.2
0.1
10
0.05
0.02
0
0.01
-4
1
-5
10
-3
-2
10
-1
2
3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, single-sided copper, 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-007848
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
2
10
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
-5
10
-4
-3
-2
10
-1
2
3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, 4-layer copper, standard footprint
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-007849
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0
0.01
-4
1
-5
10
-3
-2
10
-1
2
3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, 4-layer copper, 1 cm2
Fig. 7. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PBSS4160QA-Q
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Nexperia B.V. 2023. All rights reserved
Product data sheet
9 March 2023
5 / 14
Nexperia
PBSS4160QA-Q
60 V, 1 A NPN low VCEsat transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
100
50
Unit
nA
ICBO
collector-base cut-off
current
VCB = 48 V; IE = 0 A; Tamb = 25 °C
VCB = 48 V; IE = 0 A; Tj = 150 °C
VEB = 5 V; IC = 0 A; Tamb = 25 °C
-
-
-
-
-
-
µA
IEBO
ICES
hFE
emitter-base cut-off
current
100
nA
collector-emitter cut-off VCE = 48 V; VBE = 0 V; Tamb = 25 °C
current
-
-
100
-
nA
DC current gain
VCE = 2 V; IC = 100 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
230
400
240
130
90
VCE = 2 V; IC = 500 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
150
-
VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
85
-
-
VCEsat
collector-emitter
saturation voltage
IC = 500 mA; IB = 50 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
125
245
235
235
1
mV
mV
mV
mΩ
V
IC = 1 A; IB = 50 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
180
170
170
0.89
0.94
0.98
0.78
IC = 1 A; IB = 100 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
RCEsat
VBEsat
collector-emitter
saturation resistance
IC = 1 A; IB = 0.1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
-
base-emitter saturation IC = 500 mA; IB = 50 mA; pulsed; tp ≤
voltage
-
300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = 1 A; IB = 50 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
1.05
1.1
0.9
V
IC = 1 A; IB = 100 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
V
VBEon
base-emitter turn-on
voltage
VCE = 2 V; IC = 0.5 A; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
V
td
tr
delay time
VCC = 10 V; IC = 0.5 A; IBon = 25 mA;
IBoff = -25 mA; Tamb = 25 °C
-
15
-
-
-
-
-
-
-
ns
rise time
-
85
ns
ton
ts
turn-on time
storage time
fall time
-
100
545
125
670
180
ns
-
ns
tf
-
ns
toff
fT
turn-off time
transition frequency
-
ns
VCE = 10 V; IC = 50 mA; f = 100 MHz;
Tamb = 25 °C
120
MHz
Cc
collector capacitance
VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;
Tamb = 25 °C
-
4.7
6
pF
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Product data sheet
9 March 2023
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Nexperia
PBSS4160QA-Q
60 V, 1 A NPN low VCEsat transistor
aaa-007850
aaa-007851
3
10
1.5
I
B
= 13 mA
11.7 10.4 9.1
(1)
I
C
(2)
(A)
h
FE
7.8
5.2
6.5
3.9
(3)
1.0
2
10
2.6
0.5
1.3
10
0
-1
10
2
3
4
1
10
10
10
10
(mA)
0
1
2
3
4
5
I
V
CE
(V)
C
VCE = 2 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 9. Collector current as a function of collector-
emitter voltage; typical values
Fig. 8. DC current gain as a function of collector
current; typical values
aaa-007852
aaa-007853
1.2
1.2
V
BE
(V)
V
BEsat
(V)
0.8
0.8
0.4
0
(1)
(2)
(3)
(1)
(2)
(3)
0.4
0
-1
10
2
3
4
-1
10
2
3
4
1
10
10
10
10
(mA)
1
10
10
10
10
I (mA)
C
I
C
VCE = 2 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb= 100 °C
Fig. 10. Base-emitter voltage as a function of collector Fig. 11. Base-emitter saturation voltage as a function of
current; typical values
collector current; typical values
©
PBSS4160QA-Q
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Nexperia B.V. 2023. All rights reserved
Product data sheet
9 March 2023
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Nexperia
PBSS4160QA-Q
60 V, 1 A NPN low VCEsat transistor
aaa-007854
aaa-007855
1
1
V
V
CEsat
(V)
CEsat
(V)
(1)
(2)
-1
-1
-2
-3
10
10
10
10
(1)
(3)
(2)
(3)
-2
10
10
-3
-1
10
2
3
4
-1
2
3
4
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 12. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 13. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-007856
aaa-007857
3
3
10
10
R
CEsat
(Ω)
R
CEsat
(Ω)
2
2
10
10
10
10
(1)
(2)
(3)
(1)
1
1
(2)
(3)
-1
-1
10
10
-1
2
3
4
-1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 14. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig. 15. Collector-emitter saturation resistance as a
function of collector current; typical values
©
PBSS4160QA-Q
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Nexperia B.V. 2023. All rights reserved
Product data sheet
9 March 2023
8 / 14
Nexperia
PBSS4160QA-Q
60 V, 1 A NPN low VCEsat transistor
11. Test information
I
B
input pulse
90 %
(idealized waveform)
I
(100 %)
Bon
10 %
I
Boff
output pulse
(idealized waveform)
I
C
90 %
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
t
t
off
on
006aaa003
Fig. 16. Switching time definition
V
V
CC
BB
R
B
R
C
V
o
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
R2
V
I
DUT
R1
mlb826
Fig. 17. Test circuit for switching times
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
©
PBSS4160QA-Q
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Nexperia B.V. 2023. All rights reserved
Product data sheet
9 March 2023
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Nexperia
PBSS4160QA-Q
60 V, 1 A NPN low VCEsat transistor
12. Package outline
0.87
0.95
0.75
0.22
0.30
0.17
0.25
1
2
0.95
1.05
0.16
0.24
0.1
0.195
0.275
3
0.04
max
0.245
0.325
0.34
0.40
1.05
1.15
Dimensions in mm
13-03-05
Fig. 18. Package outline DFN1010D-3 (SOT1215)
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Product data sheet
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PBSS4160QA-Q
60 V, 1 A NPN low VCEsat transistor
13. Soldering
Footprint information for reflow soldering of DFN1010D-3 package
SOT1215
1.2
0.45 (2x)
0.35 (2x)
0.3
1.1
0.25 (2x)
0.4
0.75
0.3 0.4
0.5 1.3
0.3 0.4
0.5
0.4
0.5
1.5 1.4
0.3
0.4
0.5
1.3
solder land
solder land plus solder paste
solder resist
occupied area
Dimensions in mm
12-11-23
Issue date
sot1215_fr
13-03-06
Fig. 19. Reflow soldering footprint for DFN1010D-3 (SOT1215)
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Product data sheet
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PBSS4160QA-Q
60 V, 1 A NPN low VCEsat transistor
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
20230309
Data sheet status
Change notice
Supersedes
PBSS4160QA-Q v.1
Product data sheet
-
-
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60 V, 1 A NPN low VCEsat transistor
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15. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
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data sheet
Development
This document contains data from
the objective specification for
product development.
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data sheet
Qualification
Production
This document contains data from
the preliminary specification.
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Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
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Suitability for use in automotive applications — This Nexperia product
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be suitable for use in life support, life-critical or safety-critical systems or
©
PBSS4160QA-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
9 March 2023
13 / 14
Nexperia
PBSS4160QA-Q
60 V, 1 A NPN low VCEsat transistor
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................6
11. Test information..........................................................9
12. Package outline........................................................ 10
13. Soldering................................................................... 11
14. Revision history........................................................12
15. Legal information......................................................13
© Nexperia B.V. 2023. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 9 March 2023
©
PBSS4160QA-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
9 March 2023
14 / 14
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