PBSS4350Z [NEXPERIA]
50 V low VCEsat NPN transistorProduction;
| 型号： | PBSS4350Z |
| 厂家： | 
Nexperia |
| 描述： | 50 V low VCEsat NPN transistorProduction PC 开关 光电二极管 晶体管 |
| 文件： | 总12页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PBSS4350Z
50 V low VCEsat NPN transistor
26 June 2018
Product data sheet
1. General description
NPN low VCEsat transistor in a SOT223 plastic package. PNP complement: PBSS5350Z.
2. Features and benefits
•
Low collector-emitter saturation voltage
•
•
•
•
•
High collector current capability: IC and ICM
High collector current gain (hFE ) at high IC
Higher efficiency leading to less heat generation
Reduced PCB area requirements compared to DPAK.
AEC-Q101 qualified
3. Applications
•
Power management
•
•
•
•
DC/DC converters
Supply line switching
Battery charger
Linear voltage regulation (LDO).
•
Peripheral drivers
•
•
Driver in low supply voltage applications, e.g. lamps, LEDs
Inductive load driver, e.g. relays, buzzers, motors.
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
50
V
IC
collector current
-
-
3
A
A
ICM
peak collector current single pulse; tp ≤ 1 ms
-
-
5
hFE
RCEsat
DC current gain
VCE = 2 V; IC = 500 mA; Tamb = 25 °C
IC = 2 A; IB = 200 mA; Tamb = 25 °C
[1]
[1]
200
-
-
-
collector-emitter
110
145
mΩ
saturation resistance
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02
Nexperia
PBSS4350Z
50 V low VCEsat NPN transistor
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
B
C
E
C
base
4
C
2
collector
emitter
collector
B
3
1
2
3
E
4
SC-73 (SOT223)
sym123
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PBSS4350Z
SC-73
plastic surface-mounted package with increased heatsink; 4
leads
SOT223
7. Marking
Table 4. Marking codes
Type number
Marking code
PBSS4350Z
PB4350
©
PBSS4350Z
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Nexperia B.V. 2018. All rights reserved
Product data sheet
26 June 2018
2 / 12
Nexperia
PBSS4350Z
50 V low VCEsat NPN transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
Min
Max
60
50
6
Unit
V
collector-base voltage
open emitter
-
collector-emitter voltage open base
-
V
emitter-base voltage
collector current
open collector
-
V
-
3
A
ICM
peak collector current
peak base current
total power dissipation
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
-
5
A
IBM
-
1
A
Ptot
[1]
[2]
-
1.35
2
W
W
°C
°C
°C
-
Tj
junction temperature
ambient temperature
storage temperature
-
150
150
150
Tamb
Tstg
-65
-65
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
K/W
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
-
-
-
-
92
62.5
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
©
PBSS4350Z
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
26 June 2018
3 / 12
Nexperia
PBSS4350Z
50 V low VCEsat NPN transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
100
50
Unit
nA
ICBO
collector-base cut-off
current
VCB = 50 V; IE = 0 A; Tamb = 25 °C
VCB = 50 V; IE = 0 A; Tj = 150 °C
VEB = 5 V; IC = 0 A; Tamb = 25 °C
-
-
-
-
-
-
µA
IEBO
hFE
emitter-base cut-off
current
100
nA
DC current gain
VCE = 2 V; IC = 500 mA; Tamb = 25 °C
VCE = 2 V; IC = 1 A; Tamb = 25 °C
VCE = 2 V; IC = 2 A; Tamb = 25 °C
[1]
[1]
[1]
200
-
-
200
-
-
100
-
-
VCEsat
collector-emitter
saturation voltage
IC = 500 mA; IB = 50 mA; Tamb = 25 °C [1]
-
-
-
-
-
90
170
290
145
mV
mV
mV
mΩ
IC = 1 A; IB = 50 mA; Tamb = 25 °C
IC = 2 A; IB = 200 mA; Tamb = 25 °C
[1]
[1]
[1]
-
-
RCEsat
VBEsat
VBEon
fT
collector-emitter
saturation resistance
110
base-emitter saturation
voltage
[1]
[1]
-
-
-
-
-
1.2
1.1
-
V
base-emitter turn-on
voltage
VCE = 2 V; IC = 1 A; Tamb = 25 °C
-
V
transition frequency
VCE = 5 V; IC = 100 mA; f = 100 MHz;
Tamb = 25 °C
100
-
MHz
pF
Cc
collector capacitance
VCB = 10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
30
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02
©
PBSS4350Z
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Nexperia B.V. 2018. All rights reserved
Product data sheet
26 June 2018
4 / 12
Nexperia
PBSS4350Z
50 V low VCEsat NPN transistor
mgw175
mgw176
600
1.2
V
BE
(V)
h
FE
500
1.0
0.8
0.6
0.4
0.2
0
(1)
(1)
(2)
400
300
200
100
0
(2)
(3)
(3)
- 1
2
3
4
- 1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
VCE = 2 V
VCE = 2 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 C
(3) Tamb = 150 °C
Fig. 1. DC current gain; typical values
Fig. 2. Base-emitter voltage as a function of collector-
current; typical values
mgw181
mgw178
3
1.2
BEsat
(V)
10
V
V
(mV)
CEsat
1.0
(1)
(2)
2
0.8
0.6
0.4
0.2
0
10
(1)
(3)
(2)
(3)
10
1
10
- 1
2
3
I
4
- 1
2
3
I
4
1
10
10
10
10
(mA)
10
1
10
10
10
10
(mA)
C
C
IC/IB = 20
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 4. Base-emitter saturation voltage as a function of
collector current; typical values
Fig. 3. Collector-emitter saturation as a function of
collector current; typical values.
©
PBSS4350Z
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Nexperia B.V. 2018. All rights reserved
Product data sheet
26 June 2018
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Nexperia
PBSS4350Z
50 V low VCEsat NPN transistor
mgw179
mgw180
1200
5
4
(2)
(3)
(4)
(5)
(1)
I
C
I
C
(mA)
(1)
(A)
1000
(2)
(3)
(6)
(7)
(4)
(5)
(6)
(7)
(8)
(8)
(9)
800
600
400
200
3
2
(10)
(9)
(10)
(11)
(12)
1
0
0
0
0.4
0.8
1.2
1.6
2
0
0.4
0.8
1.2
1.6
2
V
(V)
V
(V)
CE
CE
Tamb = 25 °C
Tamb = 25 °C
(1) IB = 3.96 mA
(2) IB = 3.63 mA
(3) IB = 3.30 mA
(4) IB = 2.97 mA
(5) IB = 2.64 mA
(6) IB = 2.31 mA
(7) IB = 1.98 mA
(8) IB = 1.65 mA
(9) IB = 1.32 mA
(10) IB = 0.99 mA
(11) IB = 0.66 mA
(12) IB = 0.33 mA
(1) IB = 150 mA
(2) IB= 135 mA
(3) IB = 120 mA
(4) IB = 105 mA
(5) IB = 90 mA
(6) IB = 75 mA
(7) IB = 60 mA
(8) IB = 45 mA
(9) IB = 30 mA
(10) IB = 15 mA
Fig. 6. Collector current as a function of collector-
emitter voltage; typical values.
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values
mgw182
3
10
R
CEsat
(Ω)
2
10
10
1
(1)
(2)
(3)
- 1
10
- 2
10
- 1
2
3
4
10
1
10
10
10
10
(mA)
I
C
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 7. Collector-emitter equivalent on-resistance as a function of collector current; typical values
©
PBSS4350Z
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
26 June 2018
6 / 12
Nexperia
PBSS4350Z
50 V low VCEsat NPN transistor
11. Package outline
Plastic surface-mounted package with increased heatsink; 4 leads
SOT223
D
E
B
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A
b
p
b
c
D
E
e
e
H
L
p
Q
v
w
y
1
1
1
E
1.8
1.5
0.10 0.80
0.01 0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
7.3
6.7
1.1
0.7
0.95
0.85
mm
4.6
2.3
0.2
0.1
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-10
06-03-16
SOT223
SC-73
Fig. 8. Package outline SC-73 (SOT223)
©
PBSS4350Z
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
26 June 2018
7 / 12
Nexperia
PBSS4350Z
50 V low VCEsat NPN transistor
12. Soldering
7
3.85
3.6
3.5
0.3
1.3 1.2
(4×) (4×)
solder lands
solder resist
4
6.1
3.9
7.65
solder paste
occupied area
1
2
3
Dimensions in mm
2.3
2.3
1.2
(3×)
1.3
(3×)
6.15
sot223_fr
Fig. 9. Reflow soldering footprint for SC-73 (SOT223)
8.9
6.7
1.9
solder lands
4
solder resist
occupied area
6.2
8.7
Dimensions in mm
1
2
3
preferred transport
direction during soldering
1.9
(3×)
2.7
2.7
1.9
(2×)
1.1
sot223_fw
Fig. 10. Wave soldering footprint for SC-73 (SOT223)
©
PBSS4350Z
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Nexperia B.V. 2018. All rights reserved
Product data sheet
26 June 2018
8 / 12
Nexperia
PBSS4350Z
50 V low VCEsat NPN transistor
13. Revision history
Table 8. Revision history
Data sheet ID
PBSS4350Z v.3
Modifications:
Release date
20180626
Data sheet status
Change notice
Supersedes
Product data sheet
-
PBSS4350Z v.2
•
•
Figures 6 and 7 corrected
The format of this data sheet has been redesigned to comply with the identity guidelines of
Nexperia.
•
Legal texts have been adapted to the new company name where appropriate.
PBSS4350Z v.2
PBSS4350Z v.1
20030513
20030120
Product data sheet
Product data sheet
-
-
PBSS4350Z v.1
-
©
PBSS4350Z
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Nexperia B.V. 2018. All rights reserved
Product data sheet
26 June 2018
9 / 12
Nexperia
PBSS4350Z
50 V low VCEsat NPN transistor
Suitability for use — Nexperia products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction
of an Nexperia product can reasonably be expected to result in personal
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suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
14. Legal information
Data sheet status
Document status Product
Definition
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
[1][2]
status [3]
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
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and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
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customer’s applications and products using Nexperia products in order to
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Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
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sold subject to the general terms and conditions of commercial sale, as
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concluded only the terms and conditions of the respective agreement shall
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customer.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
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beyond those described in the Product data sheet.
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or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
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Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
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In no event shall Nexperia be liable for any indirect, incidental, punitive,
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In the event that customer uses the product for design-in and use in
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Notwithstanding any damages that customer might incur for any reason
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for the products described herein shall be limited in accordance with the
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to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
©
PBSS4350Z
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Nexperia B.V. 2018. All rights reserved
Product data sheet
26 June 2018
10 / 12
Nexperia
PBSS4350Z
50 V low VCEsat NPN transistor
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PBSS4350Z
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Nexperia B.V. 2018. All rights reserved
Product data sheet
26 June 2018
11 / 12
Nexperia
PBSS4350Z
50 V low VCEsat NPN transistor
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 3
10. Characteristics............................................................4
11. Package outline.......................................................... 7
12. Soldering..................................................................... 8
13. Revision history..........................................................9
14. Legal information.......................................................10
© Nexperia B.V. 2018. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 26 June 2018
©
PBSS4350Z
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
26 June 2018
12 / 12
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