PBSS8110Z [NEXPERIA]
100 V, 1 A NPN low VCesat (BISS) transistorProduction;
| 型号： | PBSS8110Z |
| 厂家： | 
Nexperia |
| 描述： | 100 V, 1 A NPN low VCesat (BISS) transistorProduction 开关 光电二极管 晶体管 |
| 文件： | 总15页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
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Kind regards,
Team Nexperia
PBSS8110Z
100 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 02 — 8 January 2007
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS9110Z.
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I High-voltage DC-to-DC conversion
I High-voltage MOSFET gate driving
I High-voltage motor control
I High-voltage power switches (e.g. motors, fans)
I Automotive applications
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max
100
1
Unit
V
VCEO
IC
collector-emitter voltage open base
collector current
-
-
-
-
-
-
A
ICM
peak collector current
single pulse;
3
A
tp ≤ 1 ms
[1]
RCEsat
collector-emitter
IC = 1 A;
-
160
200
mΩ
saturation resistance
IB = 100 mA
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PBSS8110Z
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pinning
Pin
1
Description
base
Simplified outline
Symbol
4
2, 4
2
collector
emitter
3
1
4
collector
1
2
3
3
sym016
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PBSS8110Z
SC-73
plastic surface-mounted package with increased heat sink; SOT223
4 leads
4. Marking
Table 4.
Marking codes
Type number
Marking code
PBSS8110Z
PB8110
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
Min
Max
120
100
5
Unit
V
collector-base voltage
open emitter
-
-
-
-
-
collector-emitter voltage open base
V
emitter-base voltage
collector current
open collector
V
1
A
ICM
peak collector current
single pulse;
3
A
tp ≤ 1 ms
IB
base current
-
-
-
-
0.3
0.65
1
A
[1]
[2]
[3]
Ptot
total power dissipation
Tamb ≤ 25 °C
W
W
W
1.4
PBSS8110Z_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 8 January 2007
2 of 14
PBSS8110Z
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Tj
Parameter
Conditions
Min
-
Max
150
Unit
°C
junction temperature
ambient temperature
storage temperature
Tamb
Tstg
−65
−65
+150
+150
°C
°C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
001aaa508
1.6
P
tot
(W)
1.2
(1)
(2)
(3)
0.8
0.4
0
0
40
80
120
160
(°C)
T
amb
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
192
125
89
Unit
K/W
K/W
K/W
K/W
[1]
[2]
[3]
Rth(j-a)
thermal resistance from
in free air
-
-
-
-
-
-
-
-
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
17
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
PBSS8110Z_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 8 January 2007
3 of 14
PBSS8110Z
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
006aaa819
3
10
Z
th(j-a)
duty cycle =
(K/W)
1
0.75
2
10
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa820
3
10
Z
th(j-a)
(K/W)
duty cycle =
2
1
10
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS8110Z_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 8 January 2007
4 of 14
PBSS8110Z
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
006aaa821
3
10
Z
th(j-a)
(K/W)
duty cycle =
2
10
1
0.75
0.5
0.33
0.2
10
0.1
0.05
0.02
0.01
1
0
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 6 cm2
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS8110Z_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 8 January 2007
5 of 14
PBSS8110Z
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
Min
Typ
Max
100
50
Unit
nA
ICBO
collector-base cut-off
current
VCB = 80 V; IE = 0 A
-
-
-
-
VCB = 80 V; IE = 0 A;
µA
Tj = 150 °C
ICES
IEBO
hFE
collector-emitter cut-off VCE = 80 V;
-
-
-
-
-
-
100
100
-
nA
nA
current
VBE = 0 V
emitter-base cut-off
current
VEB = 4 V; IC = 0 A
-
DC current gain
VCE = 10 V;
IC = 1 mA
150
150
100
VCE = 10 V;
IC = 250 mA
500
-
[1]
[1]
VCE = 10 V;
IC = 0.5 A
VCE = 10 V; IC = 1 A
80
-
-
-
-
VCEsat
collector-emitter
saturation voltage
IC = 100 mA;
IB = 10 mA
40
mV
mV
mV
mΩ
V
[1]
[1]
[1]
[1]
[1]
IC = 500 mA;
IB = 50 mA
-
-
-
-
-
-
120
200
200
1.05
0.9
IC = 1 A;
IB = 100 mA
-
RCEsat
VBEsat
VBEon
collector-emitter
IC = 1 A;
160
saturation resistance
IB = 100 mA
base-emitter saturation IC = 1 A;
-
-
voltage
IB = 100 mA
base-emitter turn-on
voltage
VCE = 10 V; IC = 1 A
V
td
tr
delay time
VCC = 10 V;
IC = 0.5 A;
-
25
-
-
-
-
-
-
-
ns
rise time
-
220
245
365
185
550
-
ns
IBon = 0.025 A;
ton
ts
turn-on time
storage time
fall time
-
ns
IBoff = −0.025 A
-
ns
tf
-
ns
toff
fT
turn-off time
transition frequency
-
ns
VCE = 10 V;
IC = 50 mA;
f = 100 MHz
100
MHz
Cc
collector capacitance
VCB = 10 V;
IE = ie = 0 A;
f = 1 MHz
-
-
7.5
pF
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PBSS8110Z_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 8 January 2007
6 of 14
PBSS8110Z
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
001aaa497
001aaa496
600
2
I
(mA) = 35
I
B
C
(A)
31.5
28
h
FE
1.6
1.2
0.8
0.4
0
24.5
21
(1)
(2)
400
17.5
14
10.5
7
200
3.5
(3)
0
10
−1
2
3
4
1
10
10
10
10
(mA)
0
1
2
3
4
5
I
V
(V)
CE
C
VCE = 10 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. DC current gain as a function of collector
current; typical values
Fig 6. Collector current as a function of
collector-emitter voltage; typical values
006aaa986
006aaa987
1.2
10
V
BE
(V)
V
BEsat
(V)
(1)
(2)
(3)
0.8
1
(1)
(2)
0.4
(3)
−1
0
10
10
−1
2
3
4
−1
2
3
4
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
VCE = 10 V
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7. Base-emitter voltage as a function of collector
current; typical values
Fig 8. Base-emitter saturation voltage as a function of
collector current; typical values
PBSS8110Z_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 8 January 2007
7 of 14
PBSS8110Z
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
001aaa504
006aaa988
1
1
V
V
CEsat
(V)
CEsat
(V)
−1
−1
10
10
(1)
(2)
(1)
(2)
(3)
−2
−2
10
10
−1
2
3
4
−1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 10
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) IC/IB = 50
(2) IC/IB = 20
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
001aaa501
006aaa989
3
3
10
10
R
CEsat
R
CEsat
(Ω)
(Ω)
2
2
10
10
(1)
(2)
10
10
1
1
(1)
(2)
(3)
−1
−1
10
10
−1
2
3
4
−1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 10
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) IC/IB = 50
(2) IC/IB = 20
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS8110Z_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 8 January 2007
8 of 14
PBSS8110Z
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
8. Test information
I
B
input pulse
90 %
(idealized waveform)
I
(100 %)
Bon
10 %
I
Boff
output pulse
(idealized waveform)
I
C
90 %
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
t
t
off
on
006aaa003
Fig 13. BISS transistor switching time definition
V
V
CC
BB
R
B
R
C
V
o
(probe)
(probe)
oscilloscope
oscilloscope
450 Ω
450 Ω
R2
V
I
DUT
R1
mlb826
VCC = 10 V; IC = 0.5 A; IBon = 0.025 A; IBoff = −0.025 A
Fig 14. Test circuit for switching times
PBSS8110Z_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 8 January 2007
9 of 14
PBSS8110Z
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
9. Package outline
6.7
6.3
3.1
2.9
1.8
1.5
4
1.1
0.7
7.3 3.7
6.7 3.3
1
2
3
0.8
0.6
0.32
0.22
2.3
4.6
Dimensions in mm
04-11-10
Fig 15. Package outline SOT223 (SC-73)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
1000
-115
4000
PBSS8110Z
SOT223
8 mm pitch, 12 mm tape and reel
-135
[1] For further information and the availability of packing methods, see Section 14.
PBSS8110Z_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 8 January 2007
10 of 14
PBSS8110Z
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
11. Soldering
7.00
3.85
3.60
3.50
0.30
1.20
(4 ×)
4
7.40
4.80
3.90
7.65
1
2
3
1.20 (3 ×)
1.30 (3 ×)
5.90
6.15
solder lands
solder paste
occupied area
solder resist
sot223_fr
Dimensions in mm
Fig 16. Reflow soldering footprint SOT223 (SC-73)
8.90
6.70
4
4.30 8.10 8.70
1
2
3
1.90 (2×)
1.10
7.30
transport direction during soldering
sot223_fw
solder lands
occupied area
solder resist
Dimensions in mm
Fig 17. Wave soldering footprint SOT223 (SC-73)
PBSS8110Z_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 8 January 2007
11 of 14
PBSS8110Z
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
12. Revision history
Table 9.
Revision history
Document ID
PBSS8110Z_2
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20070108
Product data sheet
-
PBSS8110Z_1
• The format of this data sheet has been redesigned to comply with the new identity guidelines of
NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Section 1.1 “General description”: amended
• Section 1.2 “Features”: amended
• Section 1.3 “Applications”: amended
• Table 1 “Quick reference data”: conditions for ICM peak collector current adapted
• Table 1: RCEsat equivalent on-resistance redefined to collector-emitter saturation resistance
• Table 2 “Pinning”: simplified outline drawing amended
• Table 4 “Marking codes”: amended
• Table 5 “Limiting values”: conditions for ICM peak collector current adapted
• Table 5: Tamb operating ambient temperature redefined to ambient temperature
• Table 6 “Thermal characteristics”: amended
• Table 6: Rth(j-s) thermal resistance from junction to soldering point redefined to Rth(j-sp) thermal
resistance from junction to solder point
• Figure 2: amended
• Figure 2: Zth transient thermal impedance redefined to Zth(j-a) transient thermal impedance from
junction to ambient
• Figure 2: tp pulse time redefined to pulse duration
• Figure 3 and 4: added
• Table 7: RCEsat equivalent on-resistance redefined to collector-emitter saturation resistance
• Table 7: switching times added
• Figure 5, 6, 8 and 12: amended
• Section 8 “Test information”: added
• Figure 15: superseded by minimized package outline drawing
• Section 10 “Packing information”: added
• Section 11 “Soldering”: added
• Section 13 “Legal information”: updated
PBSS8110Z_1
20040426
Product data sheet
-
-
PBSS8110Z_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 8 January 2007
12 of 14
PBSS8110Z
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of a NXP Semiconductors product can reasonably be expected to
13.2 Definitions
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
14. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
PBSS8110Z_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 8 January 2007
13 of 14
PBSS8110Z
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing information. . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
3
4
5
6
7
8
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 8 January 2007
Document identifier: PBSS8110Z_2
相关型号：
PBSS8510PA
5200mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2 X 2 MM, 0.65 MM HEIGHT, ULTRA THIN, PLASTIC, LEADLESS, HUSON-3
NXP
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