PHPT610030NPK [NEXPERIA]
NPN/PNP high power double bipolar transistorProduction;型号: | PHPT610030NPK |
厂家: | Nexperia |
描述: | NPN/PNP high power double bipolar transistorProduction 开关 光电二极管 晶体管 |
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PHPT610030NPK
NPN/PNP high power double bipolar transistor
10 September 2020
Product data sheet
1. General description
NPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted
Device (SMD) power plastic package.
NPN/NPN complement: PHPT610030NK
PNP/PNP complement: PHPT610030PK
2. Features and benefits
•
High thermal power dissipation capability
•
•
•
•
Suitable for high temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
•
•
•
•
•
•
Motor control
Power management
Load switch
Linear mode voltage regulator
Backlighting applications
Relay replacement
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor; for the PNP transistor with negative polarity
VCEO
collector-emitter
voltage
open base
-
-
-
-
100
3
V
A
IC
collector current
TR1 (NPN)
RCEsat
collector-emitter
saturation resistance
IC = 3 A; IB = 300 mA; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
-
-
75
110
180
mΩ
mΩ
TR2 (PNP)
RCEsat
collector-emitter
saturation resistance
IC = -2 A; IB = -200 mA; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
110
Nexperia
PHPT610030NPK
NPN/PNP high power double bipolar transistor
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
E1
Description
emitter TR1
base TR1
Simplified outline
Graphic symbol
8
7
6
5
C1 B2
E2
2
B1
TR2
3
E2
emitter TR2
base TR2
TR1
4
B2
5
C2
collector TR2
collector TR2
collector TR1
collector TR1
E1
B1 C2
sym139
6
C2
7
C1
1
2
3
4
8
C1
LFPAK56D; Dual
LFPAK (SOT1205)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PHPT610030NPK
LFPAK56D;
Dual LFPAK
plastic, single ended surface mounted package (LFPAK56D); 8
leads
SOT1205
7. Marking
Table 4. Marking codes
Type number
Marking code
PHPT610030NPK
1003NPK
©
PHPT610030NPK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
2 / 18
Nexperia
PHPT610030NPK
NPN/PNP high power double bipolar transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor; for the PNP transistor with negative polarity
VCBO
VCEO
VEBO
IC
collector-base voltage
open emitter
-
-
-
-
-
-
-
-
-
100
100
7
V
collector-emitter voltage open base
V
emitter-base voltage
collector current
open collector
V
3
A
ICM
peak collector current
base current
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
8
A
IB
0.5
1
A
Ptot
total power dissipation
[1]
[2]
[3]
W
W
W
2.4
25
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
[2]
[4]
-
1.25
3
W
W
W
°C
°C
°C
-
-
5
Tj
junction temperature
ambient temperature
storage temperature
-
175
175
175
Tamb
Tstg
-55
-65
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3] Power dissipation from junction to mounting base.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
aaa-014341
4
P
tot
(W)
3
2
1
0
(1)
(2)
-75
0
75
150
225
(°C)
T
amb
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, standard footprint
Fig. 1. Per transistor: power derating curves
©
PHPT610030NPK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
3 / 18
Nexperia
PHPT610030NPK
NPN/PNP high power double bipolar transistor
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[2]
-
-
-
-
-
-
150
62.5
6
K/W
K/W
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
Per device
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[2]
[3]
-
-
-
-
-
-
120
50
K/W
K/W
K/W
30
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
aaa-014342
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.33
0.2
0.5
0.25
0.1
10
0.05
0.01
0.02
0
1
-1
10
-5
-4
-3
-2
10
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 2. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
©
PHPT610030NPK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
4 / 18
Nexperia
PHPT610030NPK
NPN/PNP high power double bipolar transistor
aaa-014343
2
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.5
0.33
0.2
0.25
10
0.1
0.05
0.01
0.02
0
1
-1
10
-5
-4
-3
-2
10
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 6 cm2
Fig. 3. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
©
PHPT610030NPK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
5 / 18
Nexperia
PHPT610030NPK
NPN/PNP high power double bipolar transistor
10. Characteristics
Table 7. Characteristics
Symbol
TR1 (NPN)
ICBO
Parameter
Conditions
Min
Typ
Max
Unit
collector-base cut-off
current
VCB = 80 V; IE = 0 A; Tamb = 25 °C
VCB = 80 V; IE = 0 A; Tj = 150 °C
-
-
-
-
-
-
100
50
nA
µA
nA
ICES
IEBO
hFE
collector-emitter cut-off VCE = 80 V; VBE = 0 V
current
100
emitter-base cut-off
current
VEB = 7 V; IC = 0 A; Tamb = 25 °C
-
-
100
-
nA
DC current gain
VCE = 10 V; IC = 500 mA; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
150
250
250
100
40
VCE = 10 V; IC = 1 A; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
80
20
10
-
-
VCE = 10 V; IC = 2 A; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
-
VCE = 10 V; IC = 3 A; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
-
VCEsat
collector-emitter
saturation voltage
IC = 1 A; IB = 50 mA; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
90
150
330
110
1
mV
mV
mΩ
V
IC = 3 A; IB = 0.3 A; tp ≤ 300 µs; pulsed;
δ ≤ 0.02; Tamb = 25 °C
-
225
75
RCEsat
VBEsat
collector-emitter
saturation resistance
IC = 3 A; IB = 300 mA; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
-
base-emitter saturation IC = 1 A; IB = 50 mA; tp ≤ 300 µs;
voltage
-
0.86
1
pulsed; δ ≤ 0.02; Tamb = 25 °C
IC = 2 A; IB = 200 mA; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
-
1.2
0.85
V
VBEon
base-emitter turn-on
voltage
VCE = 2 V; IC = 100 mA; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
-
0.67
V
td
tr
delay time
VCC = 12.5 V; IC = 1 A; IBon = 50 mA;
IBoff = -50 mA; Tamb = 25 °C
-
-
-
-
-
-
-
20
-
-
-
-
-
-
-
ns
rise time
300
320
830
470
1300
140
ns
ton
ts
turn-on time
storage time
fall time
ns
ns
tf
ns
toff
fT
turn-off time
transition frequency
ns
VCE = 10 V; IC = 100 mA; f = 100 MHz;
Tamb = 25 °C
MHz
Cc
collector capacitance
VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;
Tamb = 25 °C
-
11
-
pF
TR2 (PNP)
ICBO
collector-base cut-off
current
VCB = -80 V; IE = 0 A
-
-
-
-
-
-
-100
-50
nA
µA
nA
VCB = -80 V; IE = 0 A; Tj = 150 °C
ICES
IEBO
collector-emitter cut-off VCE = -80 V; VBE = 0 V
current
-100
emitter-base cut-off
current
VEB = -7 V; IC = 0 A
-
-
-100
nA
©
PHPT610030NPK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
6 / 18
Nexperia
PHPT610030NPK
NPN/PNP high power double bipolar transistor
Symbol
Parameter
Conditions
Min
150
80
Typ
200
210
Max
Unit
hFE
DC current gain
VCE = -10 V; IC = -500 mA; Tamb = 25 °C
-
-
VCE = -10 V; IC = -1 A; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
VCE = -10 V; IC = -2 A; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
20
10
100
40
-
-
VCE = -10 V; IC = -3 A; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
VCEsat
collector-emitter
saturation voltage
IC = -500 mA; IB = -50 mA; Tamb = 25 °C
-
-
-70
-110
-360
mV
mV
IC = -2 A; IB = -0.2 A; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
-220
RCEsat
VBEsat
collector-emitter
saturation resistance
IC = -2 A; IB = -200 mA; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
-
-
-
-
110
180
mΩ
V
base-emitter saturation IC = -1 A; IB = -50 mA; tp ≤ 300 µs;
voltage
-0.91 -1
pulsed; δ ≤ 0.02; Tamb = 25 °C
IC = -2 A; IB = -200 mA; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
-1.02 -1.2
-0.68 -0.9
V
VBEon
base-emitter turn-on
voltage
VCE = -2 V; IC = -100 mA; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
V
td
tr
delay time
VCC = -12.5 V; IC = -1 A; IBon = -50 mA;
IBoff = 50 mA; Tamb = 25 °C
-
-
-
-
-
-
-
20
-
-
-
-
-
-
-
ns
rise time
180
200
350
220
570
125
ns
ton
ts
turn-on time
storage time
fall time
ns
ns
tf
ns
toff
fT
turn-off time
transition frequency
ns
VCE = -10 V; IC = -100 mA; f = 100 MHz;
Tamb = 25 °C
MHz
Cc
collector capacitance
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
-
30
-
pF
aaa-010261
aaa-010267
400
3
I
= 50 mA
45
B
h
FE
(1)
(2)
I
C
40
35
(A)
300
200
100
0
30
2
1
0
25
10
20
5
15
(3)
-1
2
10
3
4
10
1
10
10
10
(mA)
0
1
2
3
4
5
I
C
V
(V)
CE
VCE = 10 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 5. TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
Fig. 4. TR1 (NPN): DC current gain as a function of
collector current; typical values
©
PHPT610030NPK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
7 / 18
Nexperia
PHPT610030NPK
NPN/PNP high power double bipolar transistor
aaa-010262
aaa-010265
1.4
1.2
V
BE
(V)
1.2
V
BEsat
(V)
1.0
1.0
0.8
0.6
0.4
0.2
0
(1)
0.8
0.6
0.4
0.2
(1)
(2)
(3)
(2)
(3)
-1
10
2
3
4
-1
10
2
3
4
1
10
10
10
10
(mA)
1
10
10
10
10
I (mA)
C
I
C
VCE = 2 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 6. TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
Fig. 7. TR1 (NPN): Base-emitter saturation voltage as a
function of collector current; typical values
aaa-010263
aaa-010264
10
10
V
V
CEsat
(V)
CEsat
(V)
1
1
(1)
(1)
(2)
(3)
(2)
(3)
-1
-2
-3
-1
-2
-3
10
10
10
10
10
10
-1
2
3
4
-1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 50
(2) IC/IB = 20
(3) IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 8. TR1 (NPN): Collector-emitter saturation voltage Fig. 9. TR1 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values
as a function of collector current; typical values
©
PHPT610030NPK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
8 / 18
Nexperia
PHPT610030NPK
NPN/PNP high power double bipolar transistor
aaa-010266
aaa-010268
3
3
10
10
R
CEsat
(Ω)
R
CEsat
(Ω)
2
2
10
10
10
10
(1)
(1)
1
1
(1)
(2)
(3)
-1
-1
10
10
10
(3)
-2
-2
10
-1
2
3
4
-1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 50
(2) IC/IB = 20
(3) IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 10. TR1 (NPN): Collector-emitter saturation
resistance as a function of collector current;
typical values
Fig. 11. TR1 (NPN): Collector-emitter saturation
resistance as a function of collector current;
typical values
aaa-010858
aaa-010859
500
-2.5
I
= -50 mA
-45
-40
-35
B
h
I
C
(A)
FE
(1)
(2)
400
-2.0
-30
-25
-15
-20
-10
300
200
100
0
-1.5
-1.0
-0.5
0
-5
(3)
-1
-10
2
3
4
-1
-10
-10
-10
-10
(mA)
0
-1
-2
-3
-4
-5
I
C
V
(V)
CE
VCE = −10 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 13. TR2 (PNP): Collector current as a function of
collector-emitter voltage; typical values
Fig. 12. TR2 (PNP): DC current gain as a function of
collector current; typical values
©
PHPT610030NPK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
9 / 18
Nexperia
PHPT610030NPK
NPN/PNP high power double bipolar transistor
aaa-010860
aaa-010861
-1.6
-1.2
V
BEsat
(V)
V
BE
(V)
-1.0
-1.2
(1)
-0.8
-0.6
-0.4
-0.2
(1)
(2)
(3)
(2)
(3)
-0.8
-0.4
0
-1
-10
2
3
4
-1
-10
2
3
4
-1
-10
-10
-10
-10
(mA)
-1
-10
-10
-10
-10
I (mA)
C
I
C
VCE = −2 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 14. TR2 (PNP): Base-emitter voltage as a function
of collector current; typical values
Fig. 15. TR2 (PNP): Base-emitter saturation voltage as a
function of collector current; typical values
aaa-010862
aaa-010863
-10
-10
V
V
CEsat
(V)
CEsat
(V)
-1
-1
(1)
(2)
-1
-2
-3
-1
-2
-3
-10
-10
-10
-10
-10
-10
(1)
(2)
(3)
(3)
-1
2
3
4
-1
2
3
4
-10
-1
-10
-10
-10
-10
(mA)
-10
-1
-10
-10
-10
-10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 50
(2) IC/IB = 20
(3) IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 16. TR2 (PNP): Collector-emitter saturation voltage Fig. 17. TR2 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values
as a function of collector current; typical values
©
PHPT610030NPK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
10 / 18
Nexperia
PHPT610030NPK
NPN/PNP high power double bipolar transistor
aaa-010864
aaa-010865
3
3
10
10
R
CEsat
R
CEsat
(Ω)
2
2
10
10
10
10
(1)
(2)
(1)
1
1
(3)
(2)
(3)
-1
-1
10
10
10
-2
-2
10
-1
2
3
4
-1
2
3
4
-10
-1
-10
-10
-10
-10
(mA)
-10
-1
-10
-10
-10
-10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 50
(2) IC/IB = 20
(3) IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 18. TR2 (PNP): Collector-emitter saturation
Fig. 19. TR2 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
resistance as a function of collector current;
typical values
©
PHPT610030NPK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
11 / 18
Nexperia
PHPT610030NPK
NPN/PNP high power double bipolar transistor
11. Test information
I
B
input pulse
90 %
(idealized waveform)
I
(100 %)
Bon
10 %
I
Boff
output pulse
(idealized waveform)
I
C
90 %
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
t
t
off
on
006aaa003
Fig. 20. TR1 (NPN): BISS transistor switching time definition
V
V
CC
BB
R
B
R
C
V
o
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
R2
V
I
DUT
R1
mlb826
Fig. 21. TR1 (NPN): Test circuit for switching times
©
PHPT610030NPK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
12 / 18
Nexperia
PHPT610030NPK
NPN/PNP high power double bipolar transistor
-
I
B
input pulse
90 %
(idealized waveform)
-
I
(100 %)
Bon
10 %
-
I
Boff
output pulse
-
(idealized waveform)
I
C
90 %
-
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
006aaa266
t
t
off
on
Fig. 22. TR2 (PNP): BISS transistor switching time definition
V
V
CC
BB
R
B
R
C
V
o
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
R2
V
I
DUT
R1
mgd624
Fig. 23. TR2 (PNP): Test circuit for switching times
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
©
PHPT610030NPK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
13 / 18
Nexperia
PHPT610030NPK
NPN/PNP high power double bipolar transistor
12. Package outline
Plastic single ended surface mounted package LFPAK56D; 8 leads
SOT1205
E
A
A
b
c
1
1
L
1
mounting
base
D
1
D
D
2
H
L
1
2
3
4
X
b
(8x)
e
c
E
1
w
A
E
2
C
A
1
θ
L
p
y
C
detail X
0
2.5
5 mm
scale
Dimensions
Unit
D
(ref)
2
(1)
(1)
(1)
E
(1)
A
A
b
b
c
c
D
D
1
E
E
e
H
L
L
L
p
w
y
θ
1
1
1
1
2
1
°
8
0
max 1.05 0.1 0.50 4.4 0.25 0.30 4.70 4.55 3.5 5.30 1.8 0.85
nom
min 1.02 0.0 0.35 4.1 0.19 0.24 4.45 4.35 3.4 4.95 1.6 0.60
6.2 1.3 0.55 0.85
5.9 0.8 0.30 0.40
mm
1.27
0.25 0.1
°
Note
1. Plastic or metal protrusions of 0.2 mm maximum per side are not included.
sot1205_po
Issue date
References
Outline
version
European
projection
IEC
JEDEC
JEITA
14-08-21
14-10-28
SOT1205
Fig. 24. Package outline LFPAK56D; Dual LFPAK (SOT1205)
©
PHPT610030NPK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
14 / 18
Nexperia
PHPT610030NPK
NPN/PNP high power double bipolar transistor
13. Soldering
Footprint information for reflow soldering of LFPAK56D package
SOT1205
5.85
3.81
1.27
0.7 (4x)
3.2
3.325
3.175
2.0
2.1
1.275
1.875
0.8
2.7
1.0 (2x)
3.85 3.975
0.0625
0.025
0.7 (4x)
1.44
3.81
1.27
1.1 (2x)
solder land
solder land plus solder paste
solder paste deposit
occupied area
solder resist
Dimensions in mm
sot1205_fr
Fig. 25. Reflow soldering footprint for LFPAK56D; Dual LFPAK (SOT1205)
©
PHPT610030NPK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
15 / 18
Nexperia
PHPT610030NPK
NPN/PNP high power double bipolar transistor
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PHPT610030NPK v.2 20200910
Product data sheet
-
PHPT610030NPK v.1
Modifications:
•
Characteristics: Figures 6, 7, 8 and 10 corrected
PHPT610030NPK v.1 20141014
Product data sheet
-
-
©
PHPT610030NPK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
16 / 18
Nexperia
PHPT610030NPK
NPN/PNP high power double bipolar transistor
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
15. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of commercial sale — Nexperia products are
sold subject to the general terms and conditions of commercial sale, as
published at http://www.nexperia.com/profile/terms, unless otherwise agreed
in a valid written individual agreement. In case an individual agreement is
concluded only the terms and conditions of the respective agreement shall
apply. Nexperia hereby expressly objects to applying the customer’s general
terms and conditions with regard to the purchase of Nexperia products by
customer.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be
valid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Disclaimers
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no responsibility
for the content in this document if provided by an information source outside
of Nexperia.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
In no event shall Nexperia be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
©
PHPT610030NPK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
17 / 18
Nexperia
PHPT610030NPK
NPN/PNP high power double bipolar transistor
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................6
11. Test information........................................................12
12. Package outline........................................................ 14
13. Soldering................................................................... 15
14. Revision history........................................................16
15. Legal information......................................................17
© Nexperia B.V. 2020. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 10 September 2020
©
PHPT610030NPK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
18 / 18
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