PMDPB56XNEA [NEXPERIA]
30 V, dual N-channel Trench MOSFETProduction;
| 型号： | PMDPB56XNEA |
| 厂家： | 
Nexperia |
| 描述： | 30 V, dual N-channel Trench MOSFETProduction |
| 文件： | 总17页 (文件大小：727K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMDPB56XNEA
30 V, dual N-channel Trench MOSFET
19 April 2016
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless
DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Trench MOSFET technology
Low threshold voltage
Leadless medium power SMD plastic package: 2 × 2 × 0.65 mm
Tin-plated 100 % solderable side pads for optical solder inspection
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
•
•
•
•
•
•
3. Applications
LED driver
•
•
•
•
Power management
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
30
12
3.1
V
V
A
-12
-
VGS = 4.5 V; Tamb = 25 °C
[1]
Static characteristics (per transistor)
RDSon
drain-source on-state
resistance
VGS = 4.5 V; ID = 3.1 A; Tj = 25 °C
-
55
72
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
Nexperia
PMDPB56XNEA
30 V, dual N-channel Trench MOSFET
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
D2
D1
1
2
3
4
5
6
7
8
S1
G1
D2
S2
G2
D1
D1
D2
source TR1
gate TR1
drain TR2
source TR2
gate TR2
drain TR1
drain TR1
drain TR2
6
5
4
3
7
8
G1
G2
1
2
Transparent top view
S1
S2
017aaa256
DFN2020D-6 (SOT1118D)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMDPB56XNEA
DFN2020D-6 DFN2020D-6: plastic, thermally enhanced ultra thin and SOT1118D
small outline package; no leads; 6 terminals; body 2 x 2
x 0.65 mm
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMDPB56XNEA
3A
©
PMDPB56XNEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 April 2016
2 / 17
Nexperia
PMDPB56XNEA
30 V, dual N-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
30
12
3.1
2
V
-12
V
VGS = 4.5 V; Tamb = 25 °C
[1]
[1]
-
-
-
-
A
VGS = 4.5 V; Tamb = 100 °C
A
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
12
6.2
A
EDS(AL)S
non-repetitive drain-source
avalanche energy
ID = 0.3 A; Tj(init) = 25 °C; DUT in
avalanche (unclamped)
mJ
Ptot
total power dissipation
Tamb = 25 °C
[2]
[1]
-
-
-
485
mW
W
1.15
8.33
Tsp = 25 °C
W
Per device
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
150
150
150
°C
°C
°C
Tamb
Tstg
Source-drain diode
IS
source current
Tamb = 25 °C
[1]
[3]
-
-
1.1
A
V
ESD Maximum rating
VESD
electrostatic discharge voltage HBM
2000
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
©
PMDPB56XNEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 April 2016
3 / 17
Nexperia
PMDPB56XNEA
30 V, dual N-channel Trench MOSFET
017aaa123
017aaa124
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
- 75
0
- 75
- 25
25
75
125
175
- 25
25
75
125
175
T (°C)
j
T (°C)
j
Fig. 1. Normalized total power dissipation as a
function of junction temperature
Fig. 2. Normalized continuous drain current as a
function of junction temperature
aaa-022614
2
10
I
D
(A)
t
=
p
Limit R
= V /I
DS
DSon
D
10
10 µs
100 µs
1
1 ms
DC; T = 25 °C
sp
10 ms
-1
10
10
100 ms
DC; T
= 25 °C;
amb
drain mounting pad 6 cm
2
-2
-1
2
10
1
10
10
V
(V)
DS
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
©
PMDPB56XNEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 April 2016
4 / 17
Nexperia
PMDPB56XNEA
30 V, dual N-channel Trench MOSFET
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
-
-
224
96
257
109
K/W
K/W
Rth(j-sp)
thermal resistance
from junction to solder
point
-
12
15
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
aaa-022451
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.50
0.33
0.25
0.20
2
10
0.10
0.05
0.02
10
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PMDPB56XNEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 April 2016
5 / 17
Nexperia
PMDPB56XNEA
30 V, dual N-channel Trench MOSFET
aaa-022452
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.50
0.33
0.25
0.20
0.10
0.05
10
0.02
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PMDPB56XNEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 April 2016
6 / 17
Nexperia
PMDPB56XNEA
30 V, dual N-channel Trench MOSFET
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics (per transistor)
V(BR)DSS
drain-source
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
-
-
V
V
breakdown voltage
VGSth
gate-source threshold ID = 250 µA; VDS=VGS; Tj = 25 °C
voltage
0.75
1
1.25
IDSS
IGSS
drain leakage current
gate leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VGS = 12 V; VDS = 0 V; Tj = 25 °C
VGS = -12 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 3.1 A; Tj = 25 °C
VGS = 4.5 V; ID = 3.1 A; Tj = 150 °C
VGS = 2.5 V; ID = 2.6 A; Tj = 25 °C
VDS = 10 V; ID = 3.1 A; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
1
µA
µA
µA
µA
µA
mΩ
mΩ
mΩ
S
-
10
-10
2
-
-
-
-2
RDSon
drain-source on-state
resistance
55
92
72
12
72
121
102
-
gfs
forward
transconductance
RG
gate resistance
f = 1 MHz; Tj = 25 °C
-
9.2
-
Ω
Dynamic characteristics (per transistor)
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
VDS = 15 V; ID = 3.1 A; VGS = 4.5 V;
Tj = 25 °C
-
-
-
-
-
-
2.9
0.4
0.8
256
31
5
-
nC
nC
nC
pF
pF
pF
-
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
-
Coss
Crss
-
reverse transfer
capacitance
23
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 15 V; ID = 8 A; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
9
-
-
-
-
ns
ns
ns
ns
20
19
7
turn-off delay time
fall time
Source-drain diode (per transistor)
VSD
source-drain voltage
IS = 1.1 A; VGS = 0 V; Tj = 25 °C
-
0.7
1.2
V
©
PMDPB56XNEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 April 2016
7 / 17
Nexperia
PMDPB56XNEA
30 V, dual N-channel Trench MOSFET
aaa-022615
aaa-022454
-3
-4
-5
-6
12
10
D
4.5 V
3.0 V
I
D
2.5 V
I
(A)
(A)
9
6
3
0
10
2.2 V
2.0 V
min
typ
max
10
10
V
= 1.8 V
GS
0
1
2
3
4
5
0
0.5
1.0
1.5
V
(V)
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Subthreshold drain current as a function of
gate-source voltage
aaa-022616
aaa-022617
0.5
0.3
R
DSon
(Ω)
1.8 V
2.0 V
2.2 V
2.5 V
R
DSon
(Ω)
0.4
0.3
0.2
0.1
0
0.2
0.1
0.0
T = 150 °C
j
3 V
T = 25 °C
j
V
= 4.5 V
GS
0
4
8
12
0
4
8
12
I
(A)
V
(V)
GS
D
Tj = 25 °C
ID = 3.1 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values of gate-source voltage; typical values
©
PMDPB56XNEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 April 2016
8 / 17
Nexperia
PMDPB56XNEA
30 V, dual N-channel Trench MOSFET
aaa-022618
aaa-022619
12
2
1.5
1.0
0.5
0
a
I
D
(A)
8
4
0
T = 150 °C
j
T = 25 °C
j
0
1
2
3
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID × RDSon
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
aaa-022620
aaa-022460
3
2
10
V
GS(th)
(V)
C
(pF)
1.5
1.0
0.5
0
C
iss
max
typ
2
10
min
C
C
oss
rss
10
-1
2
-60
0
60
120
180
10
1
10
10
T (°C)
j
V
(V)
DS
ID = 0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
©
PMDPB56XNEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 April 2016
9 / 17
Nexperia
PMDPB56XNEA
30 V, dual N-channel Trench MOSFET
aaa-022621
5
V
DS
V
GS
(V)
I
4
3
2
1
0
D
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
017aaa137
Fig. 15. Gate charge waveform definitions
0
1
2
3
Q
G
(nC)
ID = 3.1 A; VDS = 15 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-022622
5
I
S
(A)
4
3
2
1
0
T = 150 °C
j
T = 25 °C
j
0.0
0.4
0.8
1.2
V
(V)
SD
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
©
PMDPB56XNEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 April 2016
10 / 17
Nexperia
PMDPB56XNEA
30 V, dual N-channel Trench MOSFET
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
©
PMDPB56XNEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 April 2016
11 / 17
Nexperia
PMDPB56XNEA
30 V, dual N-channel Trench MOSFET
12. Package outline
DFN2020D-6: plastic, thermally enhanced ultra thin and small outline package; no leads;
6 terminals; body 2 x 2 x 0.65 mm
SOT1118D
b
v
A B
p
(6x)
D
A
B
A
E
A
1
pin 1
index area
detail X
solderable lead end
protrusion maximum 0.035 mm (6x)
D
1
C
(2x)
pin 1
index area
e
e
1
y
C
1
y
1
3
1
L
(6x)
p
cut-off end of
non-fuctional
bonding wire
(8x)
E
1
(2x)
4
6
X
e
e
0
1
2 mm
scale
Dimensions (mm are the original dimensions)
Unit
max 0.65 0.04 0.35 2.1 0.77 2.1
A
A
b
D
D
1
E
E
e
e
1
L
p
v
y
y
1
1
p
1
1.0
0.9 0.65 0.49 0.25 0.1 0.05 0.05
0.8 0.44 0.20
0.54 0.30
nom
mm
0.62
0.30 2.0 0.67 2.0
0.25 1.9 0.57 1.9
min 0.59
Note
1. Dimension A is including plating thickness.
sot1118d_po
References
Outline
version
IEC
European
projection
Issue date
JEDEC
- - -
JEITA
14-07-16
14-10-16
SOT1118D
Fig. 18. Package outline DFN2020D-6 (SOT1118D)
©
PMDPB56XNEA
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Nexperia B.V. 2017. All rights reserved
Product data sheet
19 April 2016
12 / 17
Nexperia
PMDPB56XNEA
30 V, dual N-channel Trench MOSFET
13. Soldering
SOT1118D
2.2
1.65
0.2
0.45
0.35
0.3
0.25
0.65
0.43 0.33
0.53
solder lands
solder paste
0.12 0.22
2.5 2.3
0.9
1
1.1
solder resist
0.935
occupied area
Dimensions in mm
0.49
0.31
0.21
0.57
0.67
0.77
1.65
sot1118d_fr
Fig. 19. Reflow soldering footprint for DFN2020D-6 (SOT1118D)
©
PMDPB56XNEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 April 2016
13 / 17
Nexperia
PMDPB56XNEA
30 V, dual N-channel Trench MOSFET
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMDPB56XNEA v.1
20160419
Product data sheet
-
-
©
PMDPB56XNEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 April 2016
14 / 17
Nexperia
PMDPB56XNEA
30 V, dual N-channel Trench MOSFET
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
15. Legal information
15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use in automotive applications — This Nexperia
product has been qualified for use in automotive
Product
[short] data
sheet
Production
This document contains the product
specification.
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
15.2 Definitions
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the Nexperia product is suitable and fit for the
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications
short data sheet, the full data sheet shall prevail.
and the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
15.3 Disclaimers
Terms and conditions of commercial sale — Nexperia
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
©
PMDPB56XNEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 April 2016
15 / 17
Nexperia
PMDPB56XNEA
30 V, dual N-channel Trench MOSFET
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PMDPB56XNEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 April 2016
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Nexperia
PMDPB56XNEA
30 V, dual N-channel Trench MOSFET
16. Contents
1
2
3
4
5
6
7
8
9
10
General description ............................................... 1
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................3
Thermal characteristics .........................................5
Characteristics .......................................................7
11
Test information ...................................................11
11.1
Quality information ............................................. 11
12
13
14
Package outline ................................................... 12
Soldering .............................................................. 13
Revision history ...................................................14
15
Legal information .................................................15
Data sheet status ............................................... 15
Definitions ...........................................................15
Disclaimers .........................................................15
Trademarks ........................................................ 16
15.1
15.2
15.3
15.4
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 19 April 2016
©
PMDPB56XNEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 April 2016
17 / 17
相关型号：
PMDPB65UP
TRANSISTOR 3.5 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, ULTRA THIN, PLASTIC, HUSON-6, FET General Purpose Small Signal
NXP
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