PMDPB58UPE [NXP]
20 V dual P-channel Trench MOSFET; 20 V双P沟道MOSFET的沟道
| 型号： | PMDPB58UPE |
| 厂家： | 
NXP |
| 描述： | 20 V dual P-channel Trench MOSFET |
| 文件： | 总15页 (文件大小：880K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMDPB58UPE
DFN2020-6
20 V dual P-channel Trench MOSFET
Rev. 1 — 19 June 2012
Product data sheet
1. Product profile
1.1 General description
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a
leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic
package using Trench MOSFET technology.
1.2 Features and benefits
Low threshold voltage
Very fast switching
Trench MOSFET technology
2 kV ElectroStatic Discharge (ESD)
protection
1.3 Applications
Relay driver
High-side load switch
Switching circuits
High-speed line driver
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
-20
8
V
V
A
-8
-
[1]
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; ID = -2 A; Tj = 25 °C
-4.5
Static characteristics (per transistor)
RDSon
drain-source on-state
resistance
-
58
67
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
PMDPB58UPE
NXP Semiconductors
20 V dual P-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
S1
G1
D2
S2
G2
D1
D1
D2
source TR1
gate TR1
drain TR2
source TR2
gate TR2
drain TR1
drain TR1
drain TR2
D2
D1
6
5
4
2
3
7
8
G1
G2
4
5
1
2
3
6
Transparent top view
S1
S2
7
017aaa260
DFN2020-6 (SOT1118)
8
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
SOT1118
PMDPB58UPE
DFN2020-6
plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals
4. Marking
Table 4.
Marking codes
Type number
PMDPB58UPE
Marking code
2A
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-20
8
V
-8
-
V
[1]
[1]
[1]
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
-4.5
-3.6
-2.3
-14.4
515
A
-
A
-
A
IDM
Ptot
peak drain current
-
A
[2]
[1]
total power dissipation
-
mW
-
1210 mW
8330 mW
Tsp = 25 °C
-
Source-drain diode
[1]
IS
source current
Tamb = 25 °C
-
-1.3
A
PMDPB58UPE
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2012
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NXP Semiconductors
20 V dual P-channel Trench MOSFET
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
ESD maximum rating
[3]
VESD
Per device
Tj
electrostatic discharge voltage HBM; C = 100 pF; R = 1.5 kΩ
-
2000
V
junction temperature
ambient temperature
storage temperature
-55
-55
-65
150
150
150
°C
°C
°C
Tamb
Tstg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
017aaa123
017aaa124
120
120
P
der
I
der
(%)
(%)
80
80
40
40
0
−75
0
−75
−25
25
75
125
175
−25
25
75
125
175
T (°C)
j
T (°C)
j
Fig 1. Normalized total power dissipation as a
function of junction temperature
Fig 2. Normalized continuous drain current as a
function of junction temperature
PMDPB58UPE
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2012
3 of 15
PMDPB58UPE
NXP Semiconductors
20 V dual P-channel Trench MOSFET
aaa-003791
2
-10
I
D
Limit R
= V /I
DS D
DSon
(A)
-10
t
= 100 μs
= 1 ms
p
t
p
-1
-1
t
t
= 10 ms
p
= 100 ms
p
DC; T = 25 °C
sp
-10
DC; T
= 25 °C;
2
amb
drain mounting pad 6 cm
-2
-10
-10
-1
2
-1
-10
-10
V
(V)
DS
IDM = single pulse
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
in free air
Min
Typ
Max
Unit
Per transistor
[1]
[2]
[2]
Rth(j-a)
thermal resistance
from junction to
ambient
-
-
-
-
212
90
244
104
64
K/W
K/W
K/W
K/W
in free air; t ≤ 5 s
55
Rth(j-sp)
thermal resistance
from junction to solder
point
11
15
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
PMDPB58UPE
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2012
4 of 15
PMDPB58UPE
NXP Semiconductors
20 V dual P-channel Trench MOSFET
aaa-003792
3
10
Z
th(j-a)
duty cycle = 1
(K/W)
0.75
0.5
2
10
0.33
0.25
0.2
0.1
0.05
0.02
10
0.01
0
1
-3
-2
-1
2
3
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-003793
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.2
0.1
0.25
10
0.05
0.02
0
0.01
1
-3
-2
-1
2
3
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm2
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMDPB58UPE
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2012
5 of 15
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NXP Semiconductors
20 V dual P-channel Trench MOSFET
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics (per transistor)
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-20
-
-
V
V
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
-0.45 -0.7
-0.95
IDSS
drain leakage current
VDS = -20 V; VGS = 0 V; Tj = 25 °C
VDS = -20 V; VGS = 0 V; Tj = 150 °C
VGS = 8 V; VDS = 0 V; Tj = 25 °C
VGS = -8 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; ID = -2 A; Tj = 25 °C
VGS = -4.5 V; ID = -2 A; Tj = 150 °C
VGS = -2.5 V; ID = -1.5 A; Tj = 25 °C
VGS = -1.8 V; ID = -1 A; Tj = 25 °C
VDS = -10 V; ID = -2 A; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
-1
µA
µA
µA
µA
mΩ
mΩ
mΩ
mΩ
S
-
-10
10
-10
67
95
95
137
-
IGSS
gate leakage current
-
-
RDSon
drain-source on-state
resistance
58
82
74
97
9
gfs
forward
transconductance
Dynamic characteristics (per transistor)
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
VDS = -10 V; ID = -2 A; VGS = -4.5 V;
Tj = 25 °C
-
-
-
-
-
-
6.3
1.2
0.9
804
95
9.5
nC
nC
nC
pF
pF
pF
-
-
-
-
-
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
Coss
Crss
reverse transfer
capacitance
66
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = -10 V; ID = -2 A; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
7
-
-
-
-
ns
ns
ns
ns
15
41
14
turn-off delay time
fall time
Source-drain diode (per transistor)
VSD
source-drain voltage
IS = -0.5 A; VGS = 0 V; Tj = 25 °C
-
-0.7
-1.2
V
PMDPB58UPE
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2012
6 of 15
PMDPB58UPE
NXP Semiconductors
20 V dual P-channel Trench MOSFET
aaa-003794
017aaa143
–3
–4
–5
–6
-16
–10
-4.5 V
I
V
GS
= -2.5 V
D
(A)
I
D
(A)
-8.0 V
-3.0 V
-12
-8
-4
0
–10
-2.2 V
-2.0 V
(1)
(2)
(3)
–10
–10
-1.8 V
-1.6 V
0
-1
-2
-3
-4
–0.2
–0.4
–0.6
–0.8
–1.0
V
DS
(V)
V
(V)
GS
Tj = 25 °C
Tj = 25 °C; VDS = -3 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
aaa-003795
aaa-003796
240
240
-2.0 V
V
-1.6 V
-2.5 V
R
R
DSon
(mΩ)
DSon
= -2.2 V
-1.8 V
GS
(mΩ)
160
160
-3.0 V
T = 150 °C
j
80
0
80
0
-4.5 V
-8.0 V
T = 25 °C
j
0
-4
-8
-12
-16
0
-4
-8
-12
-16
I
(A)
V
(V)
GS
D
Tj = 25 °C
ID = -2 A
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMDPB58UPE
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2012
7 of 15
PMDPB58UPE
NXP Semiconductors
20 V dual P-channel Trench MOSFET
aaa-003797
aaa-003798
-16
1.5
1.0
0.5
0.0
I
D
(A)
a
-12
T = 25 °C
T = 150 °C
j
j
-8
-4
0
T = 150 °C
j
T = 25 °C
j
0
-1
-2
-3
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID × RDSon
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
aaa-003799
aaa-003800
4
-1.2
10
C
V
GS(th)
(V)
(pF)
max
typ
3
-0.8
-0.4
0.0
10
C
iss
min
2
10
C
oss
C
rss
10
-1
2
-60
0
60
120
180
-10
-1
-10
-10
T (°C)
j
V
(V)
DS
ID = -0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig 12. Gate-source threshold voltage as a function of
junction temperature
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMDPB58UPE
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2012
8 of 15
PMDPB58UPE
NXP Semiconductors
20 V dual P-channel Trench MOSFET
aaa-003801
-5
V
DS
V
GS
(V)
I
-4
-3
-2
-1
0
D
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
017aaa137
0
2
4
6
Q
G
(nC)
ID = -2 A; VDS = -10 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
Fig 15. Gate charge waveform definitions
aaa-003802
-5
I
S
(A)
-4
-3
-2
-1
0
T = 150 °C
j
T = 25 °C
j
0
-0.2
-0.4
-0.6
-0.8
-1.0
(V)
V
DS
VGS = 0 V
Fig 16. Source current as a function of source-drain voltage; typical values
PMDPB58UPE
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2012
9 of 15
PMDPB58UPE
NXP Semiconductors
20 V dual P-channel Trench MOSFET
8. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig 17. Duty cycle definition
9. Package outline
2.1
1.9
0.65
max
1.1
0.9
0.04
max
0.77
0.57
(2×)
3
1
4
6
0.65
(4×)
2.1
1.9
0.54
0.44
(2×)
0.35
0.25
(6×)
0.3
0.2
Dimensions in mm
10-05-31
Fig 18. Package outline DFN2020-6 (SOT1118)
PMDPB58UPE
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2012
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NXP Semiconductors
20 V dual P-channel Trench MOSFET
10. Soldering
2.1
0.65
0.49
0.65
0.49
0.3 0.4
(6×) (6×)
solder lands
solder paste
0.875
1.05 1.15
(2×) (2×)
2.25
solder resist
0.875
occupied area
Dimensions in mm
0.35
0.72
(6×)
(2×)
0.45
0.82
(6×)
(2×)
sot1118_fr
Fig 19. Reflow soldering footprint for DFN2020-6 (SOT1118)
PMDPB58UPE
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2012
11 of 15
PMDPB58UPE
NXP Semiconductors
20 V dual P-channel Trench MOSFET
11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMDPB58UPE v.1
20120619
Product data sheet
-
-
PMDPB58UPE
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2012
12 of 15
PMDPB58UPE
NXP Semiconductors
20 V dual P-channel Trench MOSFET
12. Legal information
12.1 Data sheet status
Document status[1] [2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URLhttp://www.nxp.com.
Right to make changes — NXP Semiconductors reserves the right to make
12.2 Definitions
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
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applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
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full data sheet shall prevail.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
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data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
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Product data sheet.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
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Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
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damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
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damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with theTerms and conditions of commercial sale of NXP Semiconductors.
PMDPB58UPE
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2012
13 of 15
PMDPB58UPE
NXP Semiconductors
20 V dual P-channel Trench MOSFET
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products are sold subject to the general terms and conditions of commercial
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12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G
reenChip,HiPerSmart,HITAG,I²C-bus
logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE
Ultralight,MoReUse,QLPAK,Silicon
Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia
andUCODE — are trademarks of NXP B.V.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
HD Radio andHD Radio logo — are trademarks of iBiquity Digital
Corporation.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
13. Contact information
For more information, please visit:http://www.nxp.com
For sales office addresses, please send an email to:salesaddresses@nxp.com
PMDPB58UPE
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2012
14 of 15
PMDPB58UPE
NXP Semiconductors
20 V dual P-channel Trench MOSFET
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Test information. . . . . . . . . . . . . . . . . . . . . . . . .10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
12.1
12.2
12.3
12.4
13
Contact information. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 19 June 2012
Document identifier: PMDPB58UPE
相关型号：
PMDPB65UP
TRANSISTOR 3.5 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, ULTRA THIN, PLASTIC, HUSON-6, FET General Purpose Small Signal
NXP
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