PSMN1R5-25MLH [NEXPERIA]
N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technologyProduction;型号: | PSMN1R5-25MLH |
厂家: | Nexperia |
描述: | N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technologyProduction |
文件: | 总12页 (文件大小:296K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PSMN1R5-25MLH
N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in
LFPAK33 using NextPowerS3 technology
30 September 2019
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.
NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 150 A
and optimized with low gate resistance (RG) for fast-switching applications.
2. Features and benefits
•
Optimized for low RDSon and low gate resistance (RG)
•
•
•
•
•
•
•
•
•
Fast switching – reduced switching losses
Strong linear-mode (SOA) rating
Low leakage < 1 µA at 25 °C
Low spiking and ringing for low EMI designs
Optimized for 4.5 V gate drive
150 A continuous ID(max) rating
High reliability copper-clip bonded and solder die attach LFPAK33 package
Qualified to 175 °C
Exposed leads for optimal visual solder inspection
3. Applications
•
•
•
•
•
Synchronous buck regulator
Synchronous rectifier in AC-DC and DC-DC applications
BLDC (brushless) motor control
eFuse and battery protection
OR-ing and hot-swap
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
ID
Parameter
Conditions
Min
Typ
Max
25
Unit
V
drain-source voltage
drain current
25 °C ≤ Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; Fig. 2
-
-
-
-
-
[1]
-
150
106
175
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 1
junction temperature
-
W
Tj
-55
°C
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 10
-
-
1.46
2.1
1.81
2.7
mΩ
mΩ
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 10
Dynamic characteristics
QGD
gate-drain charge
total gate charge
ID = 25 A; VDS = 12 V; VGS = 4.5 V;
Fig. 12; Fig. 13
1
5.6
17
11.2
28
nC
nC
QG(tot)
7.7
Nexperia
PSMN1R5-25MLH
N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology
Symbol
Source-drain diode
softness factor
Parameter
Conditions
Min
Typ
Max
Unit
S
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 12 V; Fig. 16
-
0.88
-
[1] 150A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
source
source
source
gate
Simplified outline
Graphic symbol
S
S
S
G
D
D
S
2
G
3
4
mbb076
mb
Mounting base; connected
to drain
1
2
3
4
LFPAK33 (SOT1210)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PSMN1R5-25MLH
LFPAK33
Plastic, single ended surface mounted package (LFPAK33); 8
leads; 0.65 mm pitch
SOT1210
7. Marking
Table 4. Marking codes
Type number
Marking code
PSMN1R5-25MLH
1H525L
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
Unit
drain-source voltage
drain-gate voltage
gate-source voltage
total power dissipation
drain current
25 °C ≤ Tj ≤ 175 °C
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
-
25
V
VDGR
VGS
-
25
V
-20
20
V
Ptot
Tmb = 25 °C; Fig. 1
-
106
150
121
687
175
W
A
ID
VGS = 10 V; Tmb = 25 °C; Fig. 2
VGS = 10 V; Tmb = 100 °C; Fig. 2
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
[1]
-
-
A
IDM
peak drain current
-
A
Tstg
storage temperature
-55
°C
©
PSMN1R5-25MLH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
30 September 2019
2 / 12
Nexperia
PSMN1R5-25MLH
N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology
Symbol
Tj
Parameter
Conditions
Min
-55
-
Max
175
260
Unit
°C
junction temperature
Tsld(M)
peak soldering
temperature
°C
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
-
-
106
687
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
ID = 25 A; Vsup ≤ 25 V; RGS = 50 Ω;
source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped;
tp = 811 µs
[2]
[2]
-
-
330
87
mJ
A
IAS
non-repetitive avalanche Vsup ≤ 25 V; VGS = 10 V; Tj(init) = 25 °C;
current
RGS = 50 Ω
[1] 150A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
[2] Protected by 100% test
03aa16
aaa-029619
120
200
150
100
50
I
D
(A)
P
der
(%)
(1)
80
40
0
0
0
50
100
150
200
0
25
50
75 100 125 150 175 200
T
(°C)
T
(°C)
mb
mb
VGS ≥ 10 V
(1) 150A continuous current has been successfully
demonstrated during application tests. Practically
the current will be limited by PCB, thermal design
and operating temperature.
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
Fig. 2. Continuous drain current as a function of
mounting base temperature
©
PSMN1R5-25MLH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
30 September 2019
3 / 12
Nexperia
PSMN1R5-25MLH
N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology
aaa-029620
3
2
10
I
D
Limit R
= V / I
DS
DSon
D
(A)
t
p
= 10 µs
10
DC
100 µs
10
1 ms
10 ms
100 ms
1
-1
10
-1
2
10
1
10
10
V
DS
(V)
Tmb = 25 °C; IDM is a single pulse
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from Fig. 4
junction to mounting
base
-
1.12
1.42
K/W
Rth(j-a)
thermal resistance from Fig. 5
-
-
50
-
-
K/W
K/W
junction to ambient
Fig. 6
130
aaa-028003
10
Z
th(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
-1
10
10
10
0.05
t
0.02
p
P
δ =
T
single shot
-2
-3
t
t
p
T
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
1
t
p
(s)
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
©
PSMN1R5-25MLH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
30 September 2019
4 / 12
Nexperia
PSMN1R5-25MLH
N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology
aaa-028025
aaa-028026
70 µm thick copper on FR4 board
Copper square 25.4 mm x 25.4 mm; 70 µm thick on
FR4 board
Fig. 6. PCB layout with minimum footprint for thermal
resistance from junction to ambient
Fig. 5. PCB layout for thermal resistance from junction
to ambient
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
25
-
-
V
V
V
22.5
1.2
-
-
VGS(th)
gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C
voltage
1.73
2.2
ΔVGS(th)/ΔT
gate-source threshold 25 °C ≤ Tj ≤ 150 °C
voltage variation with
-
-4
-
mV/K
temperature
IDSS
drain leakage current
gate leakage current
VDS = 20 V; VGS = 0 V; Tj = 25 °C
VDS = 20 V; VGS = 0 V; Tj = 125 °C
VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
-
1
µA
µA
nA
nA
mΩ
2.5
-
IGSS
-
100
100
1.81
-
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 10
1.46
VGS = 10 V; ID = 25 A; Tj = 150 °C;
Fig. 11
-
-
3.2
2.7
4.8
3
mΩ
mΩ
mΩ
Ω
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 10
-
2.1
-
VGS = 4.5 V; ID = 25 A; Tj = 150 °C;
Fig. 11
-
RG
gate resistance
f = 1 MHz; Tj = 25 °C
0.5
1.2
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 12 V; VGS = 4.5 V;
Fig. 12; Fig. 13
7.7
15.8
-
17
35
18
28
58
-
nC
nC
nC
ID = 25 A; VDS = 12 V; VGS = 10 V;
Fig. 12; Fig. 13
ID = 0 A; VDS = 0 V; VGS = 10 V;
Tj = 25 °C
©
PSMN1R5-25MLH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
30 September 2019
5 / 12
Nexperia
PSMN1R5-25MLH
N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology
Symbol
QGS
Parameter
Conditions
Min
1.5
Typ
5.5
3.2
Max
10.5
6.1
Unit
nC
gate-source charge
ID = 25 A; VDS = 12 V; VGS = 4.5 V;
Fig. 12; Fig. 13
QGS(th)
pre-threshold gate-
source charge
0.86
nC
QGS(th-pl)
post-threshold gate-
source charge
0.6
2.2
4.2
nC
QGD
gate-drain charge
1
-
5.6
2.8
11.2
-
nC
V
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 12 V; Fig. 12; Fig. 13
Ciss
Coss
Crss
input capacitance
output capacitance
VDS = 12 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 14
1267 2111 3167 pF
872
62
1454 2181 pF
reverse transfer
capacitance
230
552
pF
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 12 V; RL = 0.4 Ω; VGS = 4.5 V;
RG(ext) = 5 Ω
-
-
-
-
-
14
25
18
14
23
-
-
-
-
-
ns
ns
ns
ns
nC
turn-off delay time
fall time
Qoss
output charge
VGS = 0 V; VDS = 12 V; f = 1 MHz;
Tj = 25 °C
Source-drain diode
VSD
trr
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 15
-
-
-
-
0.78
30
1
-
V
reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
ns
nC
ns
VDS = 12 V; Fig. 16
Qr
ta
recovered charge
[1]
23
-
reverse recovery rise
time
16
-
tb
S
reverse recovery fall
time
-
-
14
-
-
ns
softness factor
0.88
[1] includes capacitive recovery
aaa-029621
aaa-029622
200
8
6
4
2
0
I
D
R
DSon
(mΩ)
(A)
10 V
3.5 V
4.5 V
150
100
50
V
GS
= 3 V
2.8 V
2.6 V
0
0
1
2
3
V
4
0
2
4
6
8
10
12
14
(V)
16
(V)
V
GS
DS
Tj = 25 °C
Tj = 25 °C; ID = 25 A
Fig. 7. Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
©
PSMN1R5-25MLH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
30 September 2019
6 / 12
Nexperia
PSMN1R5-25MLH
N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology
aaa-029623
aaa-029624
200
150
100
50
8
6
4
2
0
I
D
R
DSon
(mΩ)
3 V
3.5 V
(A)
4.5 V
150°C
T = 25°C
j
V
= 10 V
GS
0
0
0.5
1
1.5
2
2.5
3
V
3.5
(V)
4
0
25
50
75 100 125 150 175 200
(A)
I
D
GS
VDS = 8 V
Tj = 25 °C
Fig. 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
Fig. 10. Drain-source on-state resistance as a function
of drain current; typical values
aaa-028835
aaa-029625
2.2
10
a
V
GS
(V)
8
6
4
2
0
1.8
20 V
1.4
1
12 V
V
= 5 V
DS
0.6
-60 -30
0
30
60
90 120 150 180
T (°C)
0
5
10
15
20
25
30 35
(nC)
G
40
Q
j
Tj = 25 °C; ID = 25 A
Fig. 12. Gate-source voltage as a function of gate
charge; typical values
Fig. 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
©
PSMN1R5-25MLH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
30 September 2019
7 / 12
Nexperia
PSMN1R5-25MLH
N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology
aaa-029626
4
10
V
C
DS
(pF)
I
D
C
C
V
V
iss
GS(pl)
oss
3
10
GS(th)
V
GS
Q
GS2
Q
GS1
Q
GS
Q
GD
G(tot)
C
rss
Q
003aaa508
2
10
Fig. 13. Gate charge waveform definitions
-1
2
10
1
10
10
V
DS
(V)
VGS = 0 V; f = 1 MHz
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aal160
aaa-029627
3
2
10
I
S
I
D
(A)
(A)
t
rr
10
t
t
b
a
0
10
0.25 I
RM
150°C
0.4
T = 25°C
j
I
RM
1
t (s)
0
0.2
0.6
0.8
1
1.2
V
SD
(V)
Fig. 16. Reverse recovery timing definition
VGS = 0 V
Fig. 15. Source-drain (diode forward) current as a
function of source-drain (diode forward)
voltage; typical values
©
PSMN1R5-25MLH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
30 September 2019
8 / 12
Nexperia
PSMN1R5-25MLH
N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology
11. Package outline
Plastic single ended surface mounted package (LFPAK33); 8 leads
SOT1210
E
A
e
1
A
c
1
b
1
L
1
D
2
mounting
base
D
1
(D)
H
E
1
L
1
4
X
b
w
A
e
c
A
C
1
Lp
y
C
detail X
0
1
2.5
5 mm
scale
Dimensions
(1)
(1)
(1)
(1)
E
Unit
A
A
b
b
1
c
c
D ref
2.60
D
D
E
e
e
H
L
L
L
p
w
y
1
1
2
1
1
1
max 0.90 0.10 0.35 2.4 0.20 0.30
nom
2.35
1.90
3.40 2.45
3.20 2.00
3.40 0.65 0.25 0.50
3.20 0.45 0.13 0.30
mm
0.50
0.65 0.65
0.20 0.10
0.80 0.00 0.25 2.2 0.10 0.20
min
Note
1. Plastic or metal protrusions of 0.15 mm per side are not included.
sot1210_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
14-04-25
16-08-09
SOT1210
Fig. 17. Package outline LFPAK33 (SOT1210)
©
PSMN1R5-25MLH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
30 September 2019
9 / 12
Nexperia
PSMN1R5-25MLH
N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology
12. Soldering
Footprint information for reflow soldering of LFPAK33 package
SOT1210
2.35
2.25
0.635 0.617
0.05 (all around)
1.05
0.62
0.75
1.91
0.51
2.47
3.9
0.51
0.6
0.83
0.4 (x8)
0.3 (x8)
0.65 (x6)
0.25 (x6)
solder paste
aperture
solder land
Notes : 1. Dimensions in mm
occupied area
solder resist
sot1210_fr
Fig. 18. Reflow soldering footprint for LFPAK33 (SOT1210)
©
PSMN1R5-25MLH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
30 September 2019
10 / 12
Nexperia
PSMN1R5-25MLH
N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
13. Legal information
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Data sheet status
Document status Product
Definition
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[1][2]
status [3]
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
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and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Definitions
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
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data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be
valid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
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©
PSMN1R5-25MLH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
30 September 2019
11 / 12
Nexperia
PSMN1R5-25MLH
N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 4
10. Characteristics............................................................5
11. Package outline.......................................................... 9
12. Soldering................................................................... 10
13. Legal information......................................................11
© Nexperia B.V. 2019. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 30 September 2019
©
PSMN1R5-25MLH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
30 September 2019
12 / 12
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