PSMN1R5-30BLE [NEXPERIA]
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAKProduction;
| 型号： | PSMN1R5-30BLE |
| 厂家： | 
Nexperia |
| 描述： | N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAKProduction |
| 文件： | 总13页 (文件大小：731K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
12 October 2012
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
Enhanced forward biased safe operating area for superior linear mode operation
Very low Rdson for low conduction losses
•
•
1.3 Applications
Electronic fuse
Hot swap
Load switch
Soft start
•
•
•
•
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
30
Unit
V
VDS
ID
drain-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; VGS = 10 V; Fig. 1
-
-
-
-
-
-
[1]
120
401
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 2
W
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
-
-
1.3
1.7
1.5
mΩ
mΩ
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 12
1.85
Dynamic characteristics
QGD
gate-drain charge
VGS = 4.5 V; ID = 25 A; VDS = 15 V;
Fig. 14; Fig. 15
-
-
33.2
228
-
-
nC
nC
QG(tot)
total gate charge
VGS = 10 V; ID = 25 A; VDS = 15 V;
Fig. 14; Fig. 15
Nexperia
PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup ≤ 30 V; unclamped; RGS = 50 Ω;
Fig. 3
-
-
1990 mJ
source avalanche
energy
[1] Capped at 120A due to package
2. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
mb
D
S
1
G
D
S
D
gate
2
drain[1]
source
G
3
mbb076
mb
mounting base; connected to
drain
2
1
3
D2PAK (SOT404)
[1] It is not possible to make connection to pin 2.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PSMN1R5-30BLE
D2PAK
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
4. Marking
Table 4.
Marking codes
Type number
Marking code
PSMN1R5-30BLE
PSMN1R5-30BLE
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
30
Unit
V
VDS
drain-source voltage
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
VDGR
Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ
All information provided in this document is subject to legal disclaimers.
12 October 2012
-
30
V
©
PSMN1R5-30BLE
Nexperia B.V. 2017. All rights reserved
Product data sheet
2 / 13
Nexperia
PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
Symbol
VGS
Parameter
Conditions
Min
Max
20
Unit
V
gate-source voltage
drain current
-20
ID
VGS = 10 V; Tmb = 100 °C; Fig. 1
VGS = 10 V; Tmb = 25 °C; Fig. 1
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4
Tmb = 25 °C; Fig. 2
[1]
[1]
-
120
120
1521
401
175
175
260
A
-
A
IDM
peak drain current
-
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
peak soldering temperature
-
W
°C
°C
°C
-55
-55
-
Tsld(M)
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
[1]
-
-
120
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
1521
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup ≤ 30 V; unclamped; RGS = 50 Ω;
Fig. 3
-
1990 mJ
[1] Capped at 120A due to package
003aaj351
03aa16
120
400
I
D
P
der
(%)
(A)
300
80
200
100
0
40
(1)
0
0
50
100
150
200
(°C)
0
50
100
150
200
T
( C)
°
T
mb
mb
(1) Capped at 120A due to package
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
Fig. 1. Continuous drain current as a function of
mounting base temperature
©
PSMN1R5-30BLE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 October 2012
3 / 13
Nexperia
PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
003aaj359
103
(A)
I
AL
102
(1)
(2)
10
10-3
10-2
10-1
1
10
t
(ms)
AL
Fig. 3. Single pulse avalanche rating; avalanche current as a function of avalanche time
003aaj352
104
I
D
(A)
Limit R
= V / I
DS D
DSon
103
102
10
1
100
s
µ
t =10
p
s
µ
1 ms
DC
10 ms
100 ms
10-1
1
10
102
V
(V)
DS
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
-
0.3
0.37
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
minimum footprint; FR4 board
-
50
-
K/W
©
PSMN1R5-30BLE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 October 2012
4 / 13
Nexperia
PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
003aaj353
1
Z
th(j-mb)
(K/W)
= 0.5
δ
10-1
0.2
0.1
0.05
tp
P
δ=
10-2
T
0.02
t
tp
single shot
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
1
t (s)
p
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
27
30
0.5
-
-
-
-
-
-
V
V
V
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 175 °C;
voltage
Fig. 10
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 11; Fig. 10
1.3
-
1.7
-
2.15
2.45
V
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10
IDSS
drain leakage current
gate leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 100 °C
VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
0.5
-
10
µA
µA
nA
nA
mΩ
200
100
100
1.5
IGSS
10
10
1.3
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 12; Fig. 13
-
-
-
-
2.1
mΩ
mΩ
mΩ
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 12
1.7
-
1.85
2.9
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 12; Fig. 13
©
PSMN1R5-30BLE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 October 2012
5 / 13
Nexperia
PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
RG
internal gate
f = 1 MHz
0.5
1.1
2.2
Ω
resistance (AC)
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 15 V; VGS = 10 V;
Fig. 14; Fig. 15
-
-
228
108
-
-
nC
nC
ID = 25 A; VDS = 15 V; VGS = 4.5 V;
Fig. 14; Fig. 15
ID = 0 A; VDS = 0 V; VGS = 10 V
-
-
-
210
-
-
-
nC
nC
nC
QGS
gate-source charge
ID = 25 A; VDS = 15 V; VGS = 4.5 V;
Fig. 14; Fig. 15
31.8
21.5
QGS(th)
pre-threshold gate-
source charge
QGS(th-pl)
post-threshold gate-
source charge
-
10.3
-
nC
QGD
gate-drain charge
-
-
33.2
2.5
-
-
nC
V
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 15 V; Fig. 14; Fig. 15
Ciss
Coss
Crss
input capacitance
output capacitance
VDS = 15 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16
-
-
-
14934
2741
1168
-
-
-
pF
pF
pF
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 15 V; RL = 0.6 Ω; VGS = 4.5 V;
RG(ext) = 4.7 Ω; Tj = 25 °C
-
-
-
-
100.6
156.1
191.8
99.2
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
Source-drain diode
VSD source-drain voltage
trr
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17
-
-
-
0.78
62.5
96.8
1.2
V
reverse recovery time IS = 25 A; dIS/dt = 100 A/µs; VGS = 0 V;
-
-
ns
nC
VDS = 15 V
Qr
recovered charge
©
PSMN1R5-30BLE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 October 2012
6 / 13
Nexperia
PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
003aaj354
003aaj355
75
5
3
2.8
R
I
DSon
)
Ω
D
3.5
(m
(A)
4.5
60
4
10
45
30
15
3
2
1
0
2.6
2.4
V
(V) = 2.2
GS
0
0
0.5
1
1.5
0
4
8
12
16
V
(V)
V
(V)
DS
GS
Fig. 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aaj356
003aaj357
250
250
g
I
fs
D
(S)
(A)
200
200
150
100
150
100
50
T = 175
j
C
T = 25
C
°
°
50
0
j
0
0
1
2
3
4
0
25
50
75
100
V
(V)
I
(A)
GS
D
Fig. 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
Fig. 8. Forward transconductance as a function of
drain current; typical values
©
PSMN1R5-30BLE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 October 2012
7 / 13
Nexperia
PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
003aaj515
003aaj514
10-1
3
I
D
(A)
10-2
V
GS(th)
(V)
max
typ
2
typ
min
max
10-3
10-4
10-5
10-6
min
1
0
-60
0
1
2
3
0
60
120
180
V
(V)
T (°C)
GS
j
Fig. 11. Sub-threshold drain current as a function of
gate-source voltage
Fig. 10. Gate-source threshold voltage as a function of
junction temperature
003aaj358
003aag820
20
2
R
V(V) = 2.6
GS
2.8
DSon
a
(m
)
Ω
16
12
8
1.5
1
0.5
0
3
10
4.5
3.5
4
0
20
40
60
80
100
-60
0
60
120
180
I
(A)
°
Tj ( C)
D
Fig. 12. Drain-source on-state resistance as a function Fig. 13. Normalized drain-source on-state resistance
of drain current; typical values factor as a function of junction temperature
©
PSMN1R5-30BLE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 October 2012
8 / 13
Nexperia
PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
003aai322
10
V
DS
V
GS
(V)
I
D
7.5
6 V
V
GS(pl)
24 V
V
GS(th)
GS
5
V
Q
GS1
Q
GS2
V
= 15V
DS
2.5
0
Q
Q
GD
GS
Q
G(tot)
003aaa508
Fig. 14. Gate charge waveform definitions
0
60
120
180
240
Q
(nC)
G
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
003aai323
003aaj361
105
120
I
S
(A)
C
(pF)
100
80
60
40
C
C
iss
104
T = 150 C
°
j
oss
T = 25
j
C
°
20
0
C
rss
103
10-1
1
10
102
0
0.3
0.6
0.9
V
1.2
V
(V)
(V)
DS
SD
Fig. 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig. 17. Source current as a function of source-drain
voltage; typical values
©
PSMN1R5-30BLE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 October 2012
9 / 13
Nexperia
PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
8. Package outline
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
SOT404
A
A
E
1
mounting
base
D
1
D
H
D
2
L
p
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
D
E
A
A
b
UNIT
c
D
e
L
H
Q
1
1
p
D
max.
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
1.60
1.20
10.30
9.70
2.90 15.80 2.60
2.10 14.80 2.20
mm
11
2.54
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
05-02-11
06-03-16
SOT404
Fig. 18. Package outline D2PAK (SOT404)
©
PSMN1R5-30BLE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 October 2012
10 / 13
Nexperia
PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
9. Legal information
9.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
9.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the Nexperia product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Nexperia does not accept any liability related to any default,
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia
9.3 Disclaimers
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
©
PSMN1R5-30BLE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 October 2012
11 / 13
Nexperia
PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
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states that this specific Nexperia product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
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Nexperia accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty
of the product for such automotive applications, use and specifications, and
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liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
9.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PSMN1R5-30BLE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 October 2012
12 / 13
Nexperia
PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
10. Contents
1
Product profile ....................................................... 1
1.1
1.2
1.3
1.4
General description .............................................. 1
Features and benefits ...........................................1
Applications ..........................................................1
Quick reference data ............................................ 1
2
3
4
5
6
7
8
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................2
Thermal characteristics .........................................4
Characteristics .......................................................5
Package outline ................................................... 10
9
Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
9.1
9.2
9.3
9.4
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 12 October 2012
©
PSMN1R5-30BLE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 October 2012
13 / 13
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