PSMN7R2-100YSF [NEXPERIA]
NextPower 100 V, 6.9 mOhm N-channel MOSFET in LFPAK56 packageQualification;
| 型号： | PSMN7R2-100YSF |
| 厂家： | 
Nexperia |
| 描述： | NextPower 100 V, 6.9 mOhm N-channel MOSFET in LFPAK56 packageQualification |
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PSMN7R2-100YSF
NextPower 100 V, 6.9 mOhm N-channel MOSFET in LFPAK56
package
20 June 2023
Product data sheet
1. General description
NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for
industrial and consumer applications.
2. Features and benefits
•
Low Qrr for higher efficiency and lower spiking
Low QG × RDSon FOM for high efficiency switching applications
•
•
•
•
•
Strong avalanche energy rating (EAS
)
Avalanche rated and 100% tested
Ha-free and RoHS compliant LFPAK56 package
Wave-solderable LFPAK56 package
3. Applications
•
•
•
•
•
Synchronous rectifier in AC-DC and DC-DC
Primary side switch in 48 V DC-DC
BLDC motor control
USB-PD and mobile fast-charge adapters
Flyback and resonant topologies
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
ID
Parameter
Conditions
Min
Typ
Max
100
111
194
175
Unit
V
drain-source voltage
drain current
25 °C ≤ Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; Fig. 2
-
-
-
-
-
-
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 1
junction temperature
-
W
Tj
-55
°C
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
-
-
5.7
8.9
6.9
11
mΩ
mΩ
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 13
Dynamic characteristics
QGD
gate-drain charge
total gate charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
Tj = 25 °C; Fig. 14; Fig. 15
3
10
50
23
75
nC
nC
QG(tot)
25
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
ID = 38 A; Vsup ≤ 100 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
tp = 70 µs; Fig. 4
[1]
-
-
173
mJ
source avalanche
energy
Nexperia
PSMN7R2-100YSF
NextPower 100 V, 6.9 mOhm N-channel MOSFET in LFPAK56 package
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Source-drain diode
Qr
recovered charge
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 50 V; Tj = 25 °C; Fig. 18
-
23
-
nC
[1] Protected by 100% test
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
source
source
source
gate
Simplified outline
Graphic symbol
S
S
S
G
D
mb
2
D
S
3
G
4
1
2 3 4
mb
mounting base; connected
to drain
mbb076
LFPAK56; Power-
SO8 (SOT669)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PSMN7R2-100YSF
LFPAK56;
Power-SO8
plastic, single-ended surface-mounted package; 4
terminals
SOT669
7. Marking
Table 4. Marking codes
Type number
Marking code
7F2S10Y
PSMN7R2-100YSF
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).Tj = 25 °C unless otherwise stated.
Symbol
VDS
Parameter
Conditions
Min
Max
100
100
20
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
total power dissipation
drain current
25 °C ≤ Tj ≤ 175 °C
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
-
VDGR
VGS
-
V
-20
V
Ptot
Tmb = 25 °C; Fig. 1
-
194
111
78
W
A
ID
VGS = 10 V; Tmb = 25 °C; Fig. 2
VGS = 10 V; Tmb = 100 °C; Fig. 2
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
-
-
A
IDM
Tstg
Tj
peak drain current
storage temperature
junction temperature
-
443
175
175
A
-55
-55
°C
°C
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PSMN7R2-100YSF
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Nexperia B.V. 2023. All rights reserved
Product data sheet
20 June 2023
2 / 14
Nexperia
PSMN7R2-100YSF
NextPower 100 V, 6.9 mOhm N-channel MOSFET in LFPAK56 package
Symbol
Parameter
Conditions
Min
Max
Unit
Tsld(M)
peak soldering
temperature
-
260
°C
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
-
-
111
443
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
ID = 38 A; Vsup ≤ 100 V; RGS = 50 Ω;
source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped;
tp = 70 µs; Fig. 4
[1]
[1]
-
-
173
38
mJ
A
IAS
non-repetitive avalanche Vsup ≤ 100 V; VGS = 10 V; Tj(init) = 25 °C;
current
RGS = 50 Ω; Fig. 4
[1] Protected by 100% test
120
03aa16
aaa-034596
120
100
80
60
40
20
0
I
D
(A)
P
der
(%)
80
40
0
0
50
100
150
200
(°C)
0
25
50
75 100 125 150 175 200
(°C)
T
mb
T
mb
VGS ≥ 10 V
111 A continuous current has been successfully
demonstrated during application tests. Practically
the current will be limited by PCB, thermal design
and operating temperature.
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
Fig. 2. Continuous drain current as a function of
mounting base temperature
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PSMN7R2-100YSF
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Nexperia B.V. 2023. All rights reserved
Product data sheet
20 June 2023
3 / 14
Nexperia
PSMN7R2-100YSF
NextPower 100 V, 6.9 mOhm N-channel MOSFET in LFPAK56 package
aaa-034598
3
10
I
D
(A)
Limit R
= V / I
DS D
DSon
2
10
t
p
= 10 µs
100 µs
10
DC
1
1 ms
10 ms
100 ms
-1
10
2
1
10
10
V
DS
(V)
Tmb = 25 °C; IDM is a single pulse
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
aaa-034597
2
10
I
AL
(A)
(1)
10
(2)
(3)
1
-1
10
-3
-2
-1
10
10
10
1
AL
10
t
(ms)
(1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche
Fig. 4. Avalanche rating; avalanche current as a function of avalanche time
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from Fig. 5
junction to mounting
base
-
0.69
0.77
K/W
Rth(j-a)
thermal resistance from Fig. 6
-
-
42
85
-
-
K/W
K/W
junction to ambient
Fig. 7
©
PSMN7R2-100YSF
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Nexperia B.V. 2023. All rights reserved
Product data sheet
20 June 2023
4 / 14
Nexperia
PSMN7R2-100YSF
NextPower 100 V, 6.9 mOhm N-channel MOSFET in LFPAK56 package
aaa-034599
1
Z
th(j-mb)
(K/W)
δ = 0.5
0.2
-1
-2
-3
10
0.1
0.05
0.02
single shot
t
p
P
10
10
δ =
T
t
t
p
T
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
1
t
p
(s)
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
aaa-027933
aaa-027935
Copper area 25.4 mm square; 70 µm thick on FR4
board
70 µm thick copper on FR4 board
Fig. 7. PCB layout with minimum footprint for thermal
resistance from junction to ambient
Fig. 6. PCB layout for thermal resistance from junction
to ambient
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
100
-
-
V
90
2
-
-
-
V
VGS(th)
gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 11
3
4
-
V
voltage
ID = 1 mA; VDS=VGS; Tj = 175 °C
1.7
3.4
-7.5
V
ID = 1 mA; VDS=VGS; Tj = -55 °C
-
-
V
ΔVGS(th)/ΔT
gate-source threshold 25 °C ≤ Tj ≤ 150 °C
voltage variation with
-
-
mV/K
temperature
IDSS
drain leakage current
gate leakage current
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 125 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
0.02
1
µA
µA
nA
nA
8
2
2
100
100
100
IGSS
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PSMN7R2-100YSF
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Nexperia B.V. 2023. All rights reserved
Product data sheet
20 June 2023
5 / 14
Nexperia
PSMN7R2-100YSF
NextPower 100 V, 6.9 mOhm N-channel MOSFET in LFPAK56 package
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
-
5.7
6.9
mΩ
VGS = 7 V; ID = 25 A; Tj = 25 °C; Fig. 12
-
-
6.8
8.9
10.4
11
mΩ
mΩ
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 13
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 13
-
12.7
1.8
15.7
3.6
mΩ
Ω
RG
gate resistance
f = 1 MHz; Tj = 25 °C
0.9
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
Tj = 25 °C; Fig. 14; Fig. 15
25
-
50
75
-
nC
nC
ID = 0 A; VDS = 0 V; VGS = 10 V;
Tj = 25 °C
25.6
QGS
gate-source charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
Tj = 25 °C; Fig. 14; Fig. 15
9
-
15
21
-
nC
nC
QGS(th)
pre-threshold gate-
source charge
9.7
QGS(th-pl)
post-threshold gate-
source charge
-
5.6
-
nC
QGD
gate-drain charge
3
-
10
23
-
nC
V
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 50 V; Tj = 25 °C;
Fig. 14; Fig. 15
4.6
Ciss
Coss
Crss
input capacitance
output capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16
2065 3442 4818 pF
535
2.5
893
1428 pF
reverse transfer
capacitance
24.7
64
pF
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 50 V; RL = 2 Ω; VGS = 10 V;
RG(ext) = 5 Ω; Tj = 25 °C
-
-
-
-
14
15
34
18
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
Source-drain diode
VSD
trr
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17
-
-
-
0.83
32
1
-
V
reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
ns
nC
VDS = 50 V; Tj = 25 °C; Fig. 18
Qr
recovered charge
23
-
©
PSMN7R2-100YSF
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Nexperia B.V. 2023. All rights reserved
Product data sheet
20 June 2023
6 / 14
Nexperia
PSMN7R2-100YSF
NextPower 100 V, 6.9 mOhm N-channel MOSFET in LFPAK56 package
aaa-034600
aaa-034601
120
25
10 V
7 V
I
D
R
DSon
(A)
(mΩ)
V
GS
= 5.5 V
100
80
60
40
20
0
20
15
10
5
5 V
4.5 V
4 V
0
0
1
2
3
DS
4
0
4
8
12
16
V (V)
GS
20
V
(V)
Tj = 25 °C
Tj = 25 °C; ID = 25 A
Fig. 8. Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
aaa-034602
aaa-011501
-1
120
10
I
D
I
D
(A)
(A)
100
80
60
40
20
0
-2
-3
-4
-5
-6
10
10
10
10
10
175°C
T = 25°C
j
0
1
2
3
4
5
6
GS
7
8
0
1
2
3
4
GS
5
V
(V)
V
(V)
VDS = 8 V
Tj = 25 °C; VDS = 5 V
Fig. 10. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
Fig. 11. Sub-threshold drain current as a function of
gate-source voltage
©
PSMN7R2-100YSF
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Nexperia B.V. 2023. All rights reserved
Product data sheet
20 June 2023
7 / 14
Nexperia
PSMN7R2-100YSF
NextPower 100 V, 6.9 mOhm N-channel MOSFET in LFPAK56 package
aaa-034603
aaa-029656
25
2.5
2
R
(mΩ)
a
DSon
6 V
4.5 V
5 V
5.5 V
20
15
10
5
1.5
1
7 V
0.5
0
V
= 10 V
GS
0
0
40
80
120
160
(A)
200
-60 -30
0
30
60
90 120 150 180
I
T (°C)
j
D
Tj = 25 °C
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
aaa-034604
10
V
(V)
GS
V
DS
8
6
4
2
0
I
D
V
DS
= 20 V
V
GS(pl)
80 V
50 V
V
GS(th)
V
GS
Q
GS2
Q
GS1
Q
Q
0
10
20
30
40
50
(nC)
60
GS
GD
Q
G
Q
G(tot)
003aaa508
Tj = 25 °C; ID = 25 A
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
Fig. 15. Gate charge waveform definitions
©
PSMN7R2-100YSF
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Nexperia B.V. 2023. All rights reserved
Product data sheet
20 June 2023
8 / 14
Nexperia
PSMN7R2-100YSF
NextPower 100 V, 6.9 mOhm N-channel MOSFET in LFPAK56 package
aaa-034605
aaa-034606
4
10
120
100
80
60
40
20
0
C
I
S
(A)
(pF)
C
C
iss
3
10
oss
2
10
175°C
T = 25°C
j
C
rss
10
10
-1
2
1
10
10
0
0.2
0.4
0.6
0.8
1
(V)
1.2
V
(V)
V
DS
SD
VGS = 0 V; f = 1 MHz
VGS = 0 V
Fig. 16. Input, output and reverse transfer capacitances Fig. 17. Source-drain (diode forward) current as a
as a function of drain-source voltage; typical
values
function of source-drain (diode forward)
voltage; typical values
003aal160
I
D
(A)
t
rr
t
t
b
a
0
0.25 I
RM
I
RM
t (s)
Fig. 18. Reverse recovery timing definition
©
PSMN7R2-100YSF
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Nexperia B.V. 2023. All rights reserved
Product data sheet
20 June 2023
9 / 14
Nexperia
PSMN7R2-100YSF
NextPower 100 V, 6.9 mOhm N-channel MOSFET in LFPAK56 package
11. Package outline
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads
SOT669
A
2
E
A
C
c
E
b
2
1
2
b
3
L
1
mounting
base
b
4
D
1
D
H
L
2
1
2
3
4
X
e
w
A
c
b
1/2 e
A
(A )
3
C
A
1
q
L
detail X
y
C
θ
8
0
0
5 mm
°
°
scale
Dimensions (mm are the original dimensions)
(1)
(1)
(1)
(1)
(1)
Unit
A
A
A
A
b
b
b
b
4
c
c
2
D
D
1
E
E
e
H
L
L
L
2
w
y
1
2
3
2
3
1
1
max 1.20 0.15 1.10
nom
min 1.01 0.00 0.95
0.50 4.41 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3
6.2 0.85 1.3 1.3
5.8 0.40 0.8 0.8
0.1
0.25
1.27
0.25
mm
0.35 3.62 2.0 0.7 0.19 0.24 3.80
4.8 3.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
sot669_po
Issue date
11-03-25
References
Outline
version
European
projection
IEC
JEDEC
JEITA
SOT669
MO-235
13-02-27
Fig. 19. Package outline LFPAK56; Power-SO8 (SOT669)
©
PSMN7R2-100YSF
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
20 June 2023
10 / 14
Nexperia
PSMN7R2-100YSF
NextPower 100 V, 6.9 mOhm N-channel MOSFET in LFPAK56 package
12. Soldering
Footprint information for reflow soldering
SOT669
4.7
4.2
0.9
0.6
(3×)
(4×)
0.25
(2×)
0.25
(2×)
3.5
3.45
0.6
2.55
(3×)
2
0.25
(2×)
SR opening =
Cu + 0.075
1.1
2.15
3.3
SP opening =
Cu - 0.050
0.7
(4×)
1.27
3.81
solder paste
solder lands
125 µm stencil
occupied area
Dimensions in mm
solder resist
sot669_fr
Fig. 20. Reflow soldering footprint for LFPAK56; Power-SO8 (SOT669)
©
PSMN7R2-100YSF
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Nexperia B.V. 2023. All rights reserved
Product data sheet
20 June 2023
11 / 14
Nexperia
PSMN7R2-100YSF
NextPower 100 V, 6.9 mOhm N-channel MOSFET in LFPAK56 package
Wave soldering footprint information for LFPAK56 package
SOT669
4.826
1.78
1.72
2.1
1.4
0.6 (x4)
1.27
0.635
solder lands
Dimensions in mm
15-04-13
Issue date
15-04-16
sot669_fw
Fig. 21. Wave soldering footprint for LFPAK56; Power-SO8 (SOT669)
©
PSMN7R2-100YSF
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Nexperia B.V. 2023. All rights reserved
Product data sheet
20 June 2023
12 / 14
Nexperia
PSMN7R2-100YSF
NextPower 100 V, 6.9 mOhm N-channel MOSFET in LFPAK56 package
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
13. Legal information
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Data sheet status
Document status Product
Definition
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
[1][2]
status [3]
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Definitions
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
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©
PSMN7R2-100YSF
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
20 June 2023
13 / 14
Nexperia
PSMN7R2-100YSF
NextPower 100 V, 6.9 mOhm N-channel MOSFET in LFPAK56 package
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 4
10. Characteristics............................................................5
11. Package outline........................................................ 10
12. Soldering................................................................... 11
13. Legal information......................................................13
© Nexperia B.V. 2023. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 20 June 2023
©
PSMN7R2-100YSF
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
20 June 2023
14 / 14
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