P2H80F4 [NIEC]
FRD MODULE 80A/400V; FRD模块80A / 400V
| 型号： | P2H80F4 |
| 厂家： | 
NIHON INTER ELECTRONICS CORPORATION |
| 描述： | FRD MODULE 80A/400V |
| 文件： | 总3页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FRD MODULE 80A/400V
P2H80F4
OUTLINE DRAWING
FEATURES
* Compatible with Isolated Base SOT227
* Dual Separated Diodes
* Ultra – Fast Recovery
* Low Forward Voltage Drop
* High Surge Capability
See the Next Page
TYPICAL APPLICATIONS
* High Frequency Rectification
Maximum Ratings
Approx Net Weight:35g
Type / Grade
P2H80F4
Symbol
Unit
V
Parameter
-
-
-
Repetitive Peak Reverse Voltage *1
Non Repetitive Peak Reverse Voltage *1
VRRM
VRSM
400
-
Max Rated
Value
Parameter
Unit
Conditions
50Hz Half Sine Wave condition
Tc=85°C
Average Rectified Output Current *1
RMS Forward Current *1
IO(AV)
IF(RMS)
IFSM
80
125
800
3200
A
A
A
50 Hz Half Sine Wave,1Pulse
Non-repetitive
2msec to 10msec
Surge Forward Current *1
I Squared t *1
I2t
A2s
°C
°C
V
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
Tjw
Tstg
Viso
-40 to +150
-40 to +125
2500
Base Plate to Terminals, AC1min
Case mounting
Terminals
M4Screw
M4Screw
1.5(1.4)
1.5(1.4)
Mounting torque
Ftor
N•m
Electrical • Thermal Characteristics
Symbol
IRM
VFM IFM= 80A, Tj=25°C
Test Conditions
Max. Unit
Characteristics
Peak Reverse Current *1
Peak Forward Voltage *1
Reverse Recovery Time
VRM= VRRM, Tj= 25°C
150
1.31
60
µA
V
ns
trr
Tj=25°C , IFM=10A, -di/dt=50A/µs
Rth(j-c) Junction to Case
0.51
Thermal Resistance *1
*1: Value Per 1Arm
°C/W
Base Plate to Heat Sink with Thermal
Rth(c-f)
0.3
Compound
P2H80F4
OUTLINE DRAWING (Dimensions in mm)
1
3
4
2
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