PDH20012 [NIEC]
THYRISTOR MODULE 200A / 1200to 1600V; 晶闸管模块200A / 1600V 1200to
| 型号： | PDH20012 |
| 厂家： | 
NIHON INTER ELECTRONICS CORPORATION |
| 描述： | THYRISTOR MODULE 200A / 1200to 1600V |
| 文件： | 总5页 (文件大小：260K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
THYRISTOR MODULE
P D T 2 0 0 1 2 P D T 2 0 0 1 6
P D H 2 0 0 1 2 P D H 2 0 0 1 6
200A / 1200 to 1600V
FEATURES
OUTLINE DRAWING
* Isolated Base
* Dual Thyristors or Thyristor and Diode
Cascaded Circuit
* High Surge Capability
* UL Recognized, File No. E187184
PDT
PDH
TYPICAL APPLICATIONS
* Rectified For General Use
Maximum Ratings
Approx Net Weight:480g
Grade
Symbol
Unit
Parameter
PDT/PDH20012
PDT/PDH20016
Repetitive Peak Off-State Voltage
Non Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Reverse Voltage
VDRM
VDSM
VRRM
VRSM
1200
1300
1200
1300
1600
1700
1600
1700
V
V
Max Rated
Parameter
Unit
Conditions
Value
50Hz Half Sine Wave condition
Tc=75°C
Average Rectified Output Current
RMS On-State Current
IO(AV)
IT(RMS)
ITSM
200
A
A
314
50 Hz Half Sine Wave,1Pulse
Non-Repetitive
Surge On-State Current
I Squared t
4000
80000
100
A
I2t
2msec to 10msec
VD=2/3VDRM, ITM=2 IO, Tj=125°C
A2s
A/µs
•
Critical Rate of Turned-On Current
di/dt
IG=300mA, diG/dt=0.2A/µs
Peak Gate Power
Average Gate Power
Peak Gate Current
PGM
PG(AV)
IGM
5
1
2
W
W
A
Peak Gate Voltage
VGM
VRGM
Tjw
Tstg
Viso
10
5
V
V
°C
°C
V
Peak Gate Reverse Voltage
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
-40 to +125
-40 to +125
2500
2.5 to 3.5
9.0 to 10.0
Base Plate to Terminals, AC1min
M6 Screw
Case mounting
Terminals
Mounting torque
Ftor
N•m
M8 Screw
Value per 1 Arm
Electrical • Thermal Characteristics
Maximum Value.
Min. Typ. Max.
Characteristics
Peak Off-State Current
Peak Reverse Current
Peak Forward Voltage
Symbol
Test Conditions
Unit
IDM
IRM
VTM
VDM= VDRM, Tj= 125°C
VRM= VRRM, Tj= 125°C
ITM= 600A, Tj=25°C
80
80
1.28
mA
mA
V
Tj=-40°C
300
Gate Current to Trigger
Gate Voltage to Trigger
IGT
VD=6V,IT=1A
mA
V
Tj=25°C
Tj=125°C
Tj=-40°C
Tj=25°C
Tj=125°C
150
80
5
3
VGT VD=6V,IT=1A
2
Gate Non-Trigger Voltage
Critical Rate of Rise of Off-State
Voltage
VGD VD=2/3VDRM Tj=125°C
dv/dt VD=2/3VDRM Tj=125°C
ITM=IO,VD=2/3VDRM
0.25
V
500
V/µs
Turn-Off Time
tq
dv/dt=20V/µs, VR=100V
-di/dt=20A/µs, Tj=125°C
100
µs
Turn-On Time
Delay Time
Rise Time
tgt
td
tr
6
2
4
µs
µs
µs
VD=2/3VDRM Tj=125°C
IG=300mA, diG/dt=0.2A/µs
Latching Current
Holding Current
IL
IH
Tj=25°C
Tj=25°C
150
100
0.2
mA
Rth(j-c) Junction to Case
Thermal Resistance
Value Per 1Arm
°C/W
Base Plate to Heat Sink
with Thermal Compound
Rth(c-f)
0.1
PDT/PDH2001x OUTLINE DRAWING (Dimensions in mm)
PDT
PDH
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