TCH20A20 [NIEC]

Shottky Barrier Diode; 肖特基势垒二极管
TCH20A20
型号: TCH20A20
厂家: NIHON INTER ELECTRONICS CORPORATION    NIHON INTER ELECTRONICS CORPORATION
描述:

Shottky Barrier Diode
肖特基势垒二极管

二极管
文件: 总6页 (文件大小:79K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
20A 200V Cathode Common  
SBD Type : TCH20A20  
OUTLINE DRAWING  
For High Frequency Rectification  
FEATURES  
* High VRM SBD  
* Low Forward Voltage Drop and Low Noise  
* Surface mounted package  
* Dual Diodes Cathode Common  
Maximum Ratings  
Approx Net Weight:1.4g  
TCH20A20  
Symbol  
Rating  
Unit  
V
Repetitive Peak Reverse Voltage  
Average Rectified Output Current  
RMS Forward Current  
VRRM  
IO  
IF(RMS)  
IFSM  
200  
50 Hz,Full Sine Wave  
Resistive Load  
22.2  
20  
Tc=118°C  
A
A
A
50 Hz Full Sine Wave,1cycle  
Non-repetitive  
Surge Forward Current  
120  
Operating JunctionTemperature Range  
Storage Temperature Range  
Tjw  
Tstg  
- 40 to + 150  
- 40 to + 150  
°C  
°C  
Electrical Thermal Characteristics  
Symbol  
Conditions  
Min. Typ. Max. Unit  
Characteristics  
Peak Reverse Current  
Peak Forward Voltage  
IRM  
VFM  
Tj=25°C,VRM=VRRM per Diode  
Tj=25°C, IFM=10A per Diode  
-
-
-
-
200  
0.90  
µA  
V
Thermal Resistance  
Rth(j-c) Junction to Case  
-
-
1.5 °C/W  
C_T_ OUTLINE DRAWING (Dimensions in mm)  
FORWARD CURRENT VS. VOLTAGE  
TCH20A20 (per Arm)  
50  
20  
10  
5
Tj=25°C  
Tj=150°C  
2
1
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
INSTANTANEOUS FORWARD VOLTAGE (V)  
0°  
180°  
θ
AVERAGE FORWARD POWER DISSIPATION  
CONDUCTION ANGLE  
TCH20A20 (Total)  
20  
RECT 180°  
SINE WAVE  
16  
12  
8
4
0
0
4
8
12  
16  
20  
24  
AVERAGE FORWARD CURRENT (A)  
PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE  
Tj= 150 °C  
TCH20A20 (per Arm)  
50  
20  
10  
5
0
40  
80  
120  
160  
200  
PEAK REVERSE VOLTAGE (V)  
AVERAGE REVERSE POWER DISSIPATION  
TCH20A20 (Total)  
7
6
5
4
3
2
1
0
RECT 180°  
SINE WAVE  
0
40  
80  
120  
160  
200  
REVERSE VOLTAGE (V)  
0°  
180°  
θ
AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE  
CONDUCTION ANGLE  
VRM=200V  
TCH20A20 (Total)  
24  
RECT 180°  
SINE WAVE  
20  
16  
12  
8
4
0
0
25  
50  
75  
100  
125  
150  
CASE TEMPERATURE (°C)  
SURGE CURRENT RATINGS  
f=50Hz,Half Sine Wave,Non-Repetitive,No Load  
TCH20A20  
140  
120  
100  
80  
60  
40  
I
FSM  
20  
0.02s  
0.05  
0
0.02  
0.1  
0.2  
0.5  
1
2
TIME (s)  
JUNCTION CAPACITANCE VS. REVERSE VOLTAGE  
Tj=25°C,Vm=20mVRMS,f=100kHz,Typical Value  
TCH20A20 (per Arm)  
500  
200  
100  
50  
20  
0.5  
1
2
5
10  
20  
50  
100  
200  
500  
REVERSE VOLTAGE (V)  

相关型号:

TCH30A06

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 60V V(RRM), Silicon, TO-263AB, TO-263, D2PAK-3/2
NIEC

TCH30A15

Shottky Barrier Diode
NIEC

TCH30A15-11A

Schottky Barrier Diode
NIEC

TCH30B10

Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon,
NIEC

TCH30B10-11A

Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon,
NIEC

TCH30C10

Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon, TO-263AB, SIMILAR TO TO-263AB, 3 PIN
NIEC

TCH30C10-11A

Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon,
NIEC

TCH35P100RJE

35 Watt TO220 Package Thick Film Power
OHMITE

TCH35P10K0JE

35 Watt TO220 Package Thick Film Power
OHMITE

TCH35P10R0JE

Fixed Resistor, Metal Glaze/thick Film, 35W, 10ohm, 350V, 5% +/-Tol, 50ppm/Cel, Through Hole Mount, 4017, TO220, ROHS COMPLIANT
OHMITE

TCH35P10ROJE

35 Watt TO220 Package Thick Film Power
OHMITE

TCH35P1100JE

Fixed Resistor, Metal Glaze/thick Film, 35W, 110ohm, 350V, 5% +/-Tol, 50ppm/Cel, Through Hole Mount, TO-220, ROHS COMPLIANT
OHMITE