DS26F32MJR-QML [NSC]
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A; 四路差动线路接收器参见网站保证100K RAD （ Si）的测试，符合MIL- STD- 883 ，方法1019.5 ，条件A
| 型号： | DS26F32MJR-QML |
| 厂家： | 
National Semiconductor |
| 描述： | QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
| 文件： | 总12页 (文件大小：317K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MICROCIRCUIT DATA SHEET
Original Creation Date: 05/20/99
Last Update Date: 05/04/01
Last Major Revision Date:
MNDS26F32M-X-RH REV 0C0
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE
GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883,
METHOD 1019.5, CONDITION A
General Description
The DS26F32 is a quad differential line receiver designed to meet the requirements of EIA
Standards RS-422 and RS-423, and Federal Standards 1020 and 1030 for balanced and
unbalanced digital data transmission.
The DS26F32 offers improved performance due to the use of state-of-the-art L-FAST bipolar
technology. The L-FAST technology allows for higher speeds and lower currents by utilizing
extremely short gate delay times.
The device features an input sensitivity of 200mV over the input common mode range of
+7.0V. The DS26F32 provides an enable function common to all four receivers and TRI-STATE
outputs with 8.0 mA sink capability. Also, a fail-safe input/output relationship keeps the
outputs high when the inputs are open.
The DS26F32 offers optimum performance when used with the DS26F31 Quad Differential Line
Driver.
Industry Part Number
NS Part Numbers
DS26F32
DS26F32ME/883
DS26F32MER-QML
DS26F32MJ-QMLV
DS26F32MJ/883
DS26F32MJR-QML
DS26F32MJRQMLV
DS26F32MW-QMLV
DS26F32MW/883
DS26F32MWG/883
DS26F32MWGRQMLV
DS26F32MWR-QML
DS26F32MWRQMLV
Prime Die
M632
Controlling Document
SEE FEATURES SECTION
Processing
Subgrp Description
Temp (oC)
MIL-STD-883, Method 5004
1
Static tests at
+25
2
Static tests at
+125
-55
3
Static tests at
4
Dynamic tests at
Dynamic tests at
Dynamic tests at
Functional tests at
Functional tests at
Functional tests at
Switching tests at
Switching tests at
Switching tests at
+25
Quality Conformance Inspection
5
+125
-55
6
MIL-STD-883, Method 5005
7
+25
8A
8B
9
+125
-55
+25
10
11
+125
-55
1
MICROCIRCUIT DATA SHEET
MNDS26F32M-X-RH REV 0C0
Features
- Military temperature range
- Input voltage range of +7.0V (differential or common mode) +0.2V sensitivity over the
input voltage range.
- High input impedance
- Operation from single +5.0V supply
- Input pull-down resistor prevents output oscillation on unused channels
- TRI-STATE outputs, with choice of complementary enables, for receiving directly on a
data bus
CONTROLLING DOCUMENTS:
DS26F32ME/883
DS26F32MER-QML
DS26F32MJ-QMLV
DS26F32MJ/883
DS26F32MJR-QML
DS26F32MJRQMLV
DS26F32MW-QMLV
DS26F32MW/883
DS26F32MWG/883
DS26F32MWGRQMLV
DS26F32MWR-QML
DS26F32MWRQMLV
5962-7802005M2A
5962R7802005Q2A
5962-7802005VEA
5962-7802005MEA
5962R7802005QEA
5962R7802005VEA
5962-7802005VFA
5962-7802005MFA
5962-7802005MZA
5962R7802005VZA
5962R7802005QFA
5962R7802005VFA
2
MICROCIRCUIT DATA SHEET
MNDS26F32M-X-RH REV 0C0
(Absolute Maximum Ratings)
(Note 1)
Storage Temperature Range
Operating Temperature Range
-65 C < Ta < +150 C
-55 C < Ta < +125 C
Lead Temperature
Soldering, 60 seconds
300 C
7.0V
+25V
+25V
7.0V
50mA
Supply Voltage
Common Mode Voltage Range
Differential Input Voltage
Enable Voltage
Output Sink Current
Maximum Power Dissipation (Pd) @ +25C
(Note 2)
500mW
Thermal Resistance (JA)
J package
100 C/W
142 C/W
87 C/W
W package
E package
Note 1: "Absolute Maximum Ratings" are those values beyond which the safety of the device
cannot be guaranteed. They are not meant to imply that the devices should be operated
at these limits. The tables of "Electrical Characteristics" provide conditions for
actual device operation.
Note 2: Derate J package 10.0mW/C above +25C, Derate W package 7.1mW/C above +25C, Derate E
package 11.5mW/C above +25C
Recommended Operating Conditions
Operating Temperature
-55 C < Ta < +125 C
Supply Voltage
4.5V to 5.5V
3
MICROCIRCUIT DATA SHEET
MNDS26F32M-X-RH REV 0C0
Electrical Characteristics
DC PARAMETERS: (SEE Note 5)
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: Vcc = 5V
PIN-
NAME
SUB-
SYMBOL
Iin
PARAMETER
CONDITIONS
NOTES
MIN
MAX UNIT
GROUPS
Input Current
Vcc=4.5V, Vin=15V (Pin under test),
other inputs -15V <= Vin <= +15V
2.3
mA
mA
uA
uA
uA
V
1, 2,
3
Vcc=5.5V, Vin=-15V (Pin under test),
other inputs -15V <= Vin <= +15V
-2.8
-360
10
1, 2,
3
Iil
Iih
Ii
Logical "0"
Enable Current
Vcc = 5.5V, Ven = .4V
Vcc = 5.5V, Vin = 2.7V
Vcc = 5.5V, Vin = 5.5V
Vcc = 4.5V, Iin = -18mA
Vcc = 4.5V, Ioh = -440uA,
1, 2,
3
Logical "1"
Enable Current
1, 2,
3
Logical "1"
Enable Current
50
1, 2,
3
Vik
Voh
Vol
Input Clamp
Voltage (Enable)
-1.5
1, 2,
3
Logical "1"
Output Voltage
2.5
V
1, 2,
3
Delta Vin = 1V, Ven
= .8 = Ven
Logical "0"
Output Voltage
Vcc = 4.5V, Ven
= .8V = Ven,
.4
V
1, 2,
3
Iol = 4mA, Delta Vin = -1V
Vcc = 4.5V, Ven
= .8V = Ven,
.45
50
V
1, 2,
3
Iol = 8mA, Delta Vin = -1V
Icc
Ioz
Supply Current
Vcc = 5.5V, All Vin = Gnd, Ven = 0V,
Ven = 2V
mA
uA
uA
1, 2,
3
Off-State Output Vcc = 5.5V, Vo = .4V, Ven = .8V,
-20
20
1, 2,
3
Current
Ven = 2V
Vcc = 5.5V, Vo = 2.4V, Ven = .8V,
Ven = 2V
1, 2,
3
Rin
Vth
Input Resistance -15 <= Vcm <= 15V
14
KOhm 1, 2,
3
Differential
Input Voltage
Vcc = 4.5V, -7V <= Vcm <= 7V,
Ven = Ven = 2.5V, Vo = 0.45/2.5V
2
2
2
2
-.2
-.2
.2
.2
.8
V
1, 2,
3
Vcc = 5.5V, -7V <= Vcm <= 7V,
Ven = Ven = 2.5V, Vo = 0.45/2.5V
V
1, 2,
3
Vil
Logical "0" Input Vcc = 5.5V
Voltage (Enable)
V
1, 2,
3
Vih
Logical "1" Input Vcc = 4.5V
Voltage (Enable)
2
V
1, 2,
3
Isc (min)
Isc (max)
Output Short
Vcc = 4.5V, Vo = 0V, Delta Vin = 1V
-15
mA
mA
1, 2,
3
Circuit Current
Output Short
Circuit Current
Vcc = 5.5V, Vo = 0V, Delta Vin = 1V
-85
1, 2,
3
4
MICROCIRCUIT DATA SHEET
MNDS26F32M-X-RH REV 0C0
Electrical Characteristics
AC PARAMETERS: PROPAGATION DELAY TIME: (SEE NOTE 5)
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC: Vcc = 5V
PIN-
NAME
SUB-
SYMBOL
tPLH
PARAMETER
CONDITIONS
NOTES
MIN
MAX UNIT
23
GROUPS
Cl = 50pF
Cl = 15pF
Cl = 50pF
Cl = 15pF
Cl = 50pF
Cl = 15pF
Cl = 50pF
Cl = 15pF
Cl = 50pF
Cl = 5pF
4, 5
4, 5
3, 5
3, 5
4, 5
4, 5
3, 5
3, 5
4, 5
4, 5
3, 5
3, 5
4, 5
4, 5
3, 5
3, 5
4, 5
4, 5
3, 5
3, 5
4, 5
4, 5
3, 5
3, 5
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
9
31
22
30
23
31
22
30
18
29
16
27
20
29
18
27
55
62
20
27
30
42
18
30
10, 11
9
10, 11
tPHL
tPZH
tPZL
tPHZ
tPLZ
9
10, 11
9
10, 11
Enable Time
Enable Time
Disable Time
Disable Time
9
10, 11
9
10, 11
9
10, 11
9
10, 11
9
10, 11
9
10, 11
9
Cl = 50pF
Cl = 5pF
10, 11
9
10, 11
5
MICROCIRCUIT DATA SHEET
MNDS26F32M-X-RH REV 0C0
Electrical Characteristics
DC PARAMETERS - DRIFT VALUES
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: NOTE::This section applies to -QMLV devices only and shall be read & recorded at TA = +25C before and
after each burn-in and shall not change by more than the limits indicated. The delta rejects shall be
included in the PDA calculation.
PIN-
NAME
SUB-
SYMBOL
Voh
PARAMETER
CONDITIONS
NOTES
MIN
MAX UNIT
GROUPS
Logical "1"
Output Voltage
Vcc = 4.5V, Ioh = -440uA,
Delta Vin = 1V, Ven = 0.8V = Ven
-250
250
mV
mV
mV
mA
mA
1
Vol
Logical "0"
Output Voltage
Vcc = 4.5V, Iol = 4mA,
Delta Vin = -1V, Ven = 0.8V = Ven
-45
-45
45
45
1
1
1
1
Vcc = 4.5V, Iol = 8mA,
Delta Vin = -1V, Ven = 0.8V = Ven
Iin
Input Current
Vcc = 4.5V, Vin=15V (Pin under test),
other inputs -15V <= Vin <= +15V
-0.28 0.28
-0.28 0.28
Vcc = 5.5V, Vin=-15V (Pin under test),
other inputs -15V <= Vin <= +15V
Note 1: Power dissipation must be externally controlled at elevated temperatures.
Note 2: Parameter tested go-no-go only.
Note 3: Tested at 50pF guarantees limit at 15 & 5pF.
Note 4: Tested at 50pF, system capacitance exceeds 5 to 15pF.
Note 5: Pre and post irradiation limits are identical to those listed under AC and DC
electrical characteristics. These parts may be dose rate sensitive in a space
environment and demonstrate enhanced low dose rate effect. Radiaton end point limits
for the noted parameters are guaranteed only for the conditions as specified in
MIL-STD-883, Method 1019.5, Condition A.
6
MICROCIRCUIT DATA SHEET
MNDS26F32M-X-RH REV 0C0
Graphics and Diagrams
GRAPHICS#
DESCRIPTION
E20ARE
J16ARL
W16ARL
WG16ARC
LCC (E), TYPE C, 20 TERMINAL(P/P DWG)
CERDIP (J), 16 LEAD (P/P DWG)
CERPACK (W), 16 LEAD (P/P DWG)
CERAMIC SOIC (WG), 16 LEAD (P/P DWG)
See attached graphics following this page.
7
MICROCIRCUIT DATA SHEET
MNDS26F32M-X-RH REV 0C0
Revision History
Rev ECN # Rel Date Originator Changes
0A0
M0003443 08/22/00
Rose Malone
Initial MDS Release: MNDS26F32M-X-RH, Rev. 0A0 - Added
reference to Rad Hard. Archive MNDS26F32M-X, Rev. 0B0,
Replace By MNDS26F32M-X-RH, Rev. 0A0.
0B0
M0003730 05/04/01
Rose Malone
Update MDS: MNDS26F32M-X-RH, Rev. 0A0 to
MNDS26F32M-X-RH, Rev. 0B0. Changed Main Table and
Features Section reference to Rad Hard NS Part Numbers
and 5962 SMD Drawings for J, E and W Packages. Rad
Hard Level from 300K to 100K.
0C0
M0003796 05/04/01
Rose Malone
Update MDS: MNDS26F32M-X-RH, Rev. 0B0 to
MNDS26F32M-X-RH, Rev. 0C0. Added to Main Table NS Part
Numbers Section and Features Section reference to WG
package and SMD numbers and Marketing Dwg. to Graphics
Section.
8
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DS26F32MJRQMLV
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A
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QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A
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