LM4030AMF-4.096 [NSC]
Ultra-High Precision Shunt Voltage Reference; 超高精度并联型电压基准型号: | LM4030AMF-4.096 |
厂家: | National Semiconductor |
描述: | Ultra-High Precision Shunt Voltage Reference |
文件: | 总14页 (文件大小:378K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
May 30, 2008
LM4030
SOT-23 Ultra-High Precision Shunt Voltage Reference
General Description
Features
The LM4030 is an ultra-high precision shunt voltage refer-
ence, having exceptionally high initial accuracy (0.05%) and
temperature stability (10ppm/°C). The LM4030 is available
with fixed voltage options of 2.5V and 4.096V. Despite the tiny
SOT23 package, the LM4030 exhibits excellent thermal hys-
teresis (75ppm) and long-term stability (40ppm) as well as
immunity to board stress effects.
High output voltage accuracy 0.05%
■
■
■
■
■
■
■
■
Low temperature coefficient 10 ppm/°C
Extended temperature operation -40-125°C
Excellent thermal hysteresis, 75ppm
Excellent long-term stability, 40ppm
High immunity to board stress effects
The LM4030 is designed to operate without an external ca-
pacitor, but any capacitor up to 10µF may be used. The
LM4030 can be powered off as little as 120µA (max) but is
capable of shunting up to 30mA continuously. As with any
shunt reference, the LM4030 can be powered off of virtually
any supply and is a simple way to generate a highly accurate
system reference.
Capable of handling 50 mA transients
Voltage options 2.5V, 4.096V
SOT23-5 Package
■
Applications
Data Acquisition/Signal path
■
■
■
■
■
■
The LM4030 is available in three grades (A, B, and C). The
best grade devices (A) have an initial accuracy of 0.05% with
guaranteed temperature coefficient of 10 ppm/°C or less,
while the lowest grade parts (C) have an initial accuracy of
0.15% and a temperature coefficient of 30 ppm/°C.
Test and Measurement
Automotive & Industrial
Communications
Instrumentation
Power Management
Typical Application Circuit
30046301
Connection Diagram
Top View
30046302
SOT23-5 Package
NS Package Number MF05A
© 2008 National Semiconductor Corporation
300463
www.national.com
Ordering Information
Input Output Voltage Accuracy at
25°C And Temperature Coefficient
LM4030 Supplied as 1000
units, Tape and Reel
LM4030 Supplied as 3000 units, Part Marking
Tape and Reel
0.05%, 10 ppm/°C max (A grade)
0.10%, 20 ppm/°C max (B grade)
0.15%, 30 ppm/°C max (C grade)
LM4030AMF-2.5
LM4030AMF-4.096
LM4030BMF-2.5
LM4030BMF-4.096
LM4030CMF-2.5
LM4030CMF-4.096
LM4030AMFX-2.5
LM4030AMFX4.096
LM4030BMFX-2.5
LM4030BMFX4.096
LM4030CMFX-2.5
LM4030CMFX4.096
R5JA
R5KA
R5JB
R5KB
R5JC
R5KC
Pin Descriptions
Pin #
Name
N/C
Function
No connect pin, leave floating
Ground or no connect
No connect pin, leave floating
Reference voltsge
1
2
3
4
5
GND, N/C
N/C
VREF
GND
Ground
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2
Infrared (15sec)
ESD Susceptibility (Note 3)
Human Body Model
220°C
2kV
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Operating Ratings
Maximum Continuous Shunt Current
Maximum Shunt Current (<1s)
Junction Temperature Range (TJ)
Maximum Voltage on any input
Power Dissipation (TA = 25°C)
(Note 2)
-0.3 to 6V
30mA
50mA
−40°C to
+125°C
350mW
−65°C to 150°C
260°C
Storage Temperature Range
ꢀLead Temperature (soldering, 10sec)
Vapor Phase (60 sec)
215°C
Electrical Characteristics
LM4030-2.5 (VOUT = 2.5V) Limits in standard type are for TJ = 25°C only, and limits in boldface type apply over
the junction temperature (TJ) range of -40°C to +125°C. Minimum and Maximum limits are guaranteed through test, design, or
statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for reference
purposes only.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
(Note 4) (Note 5) (Note 4)
VREF
Reverse Breakdown Voltage
ISHUNT = 120µA
2.5
V
Reverse Breakdown Voltage Tolerance (ISHUNT = 120µA)
LM4030A-2.5
(A Grade - 0.05%)
(B Grade - 0.10%)
(C Grade - 0.15%)
-0.05
-0.10
-0.15
0.05
0.10
0.15
120
%
%
LM4030B-2.5
LM4030C-2.5
%
IRMIN
TC
Minimum Operating Current
Temperature Coefficient (Note 6)
LM4030A-2.5
µA
10
20
ppm / °C
ppm / °C
ppm / °C
ppm / °C
ppm / mA
0°C ≤ TJ ≤ + 85°C
-40°C ≤ TJ ≤ +125°C
-40°C ≤ TJ ≤ +125°C
-40°C ≤ TJ ≤ +125°C
160µA ≤ ISHUNT ≤ 30mA
LM4030B-2.5
LM4030C-2.5
20
30
Reverse Breakdown Voltage Change
with Current
25
110
ΔVREF/ΔISHUNT
Long Term Stability (Note 7)
Thermal Hysteresis (Note 8)
Output Noise Voltage (Note 9)
1000 Hrs, TA = 30°C
40
75
ppm
ppm
µVPP
ΔVREF
VHYST
-40°C ≤ TJ ≤ +125°C
0.1 Hz to 10 Hz
VN
105
3
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Electrical Characteristics
LM4030-4.096 (VOUT = 4.096V) Limits in standard type are for TJ = 25°C only, and limits in boldface type apply
over the junction temperature (TJ) range of -40°C to +125°C. Minimum and Maximum limits are guaranteed through test, design,
or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for reference
purposes only.
Symbol
Parameter
Conditions
Min
(Note
4)
Typ
Max
Unit
(Note (Note 4)
5)
VREF
Reverse Breakdown Voltage
ISHUNT = 130µA
4.096
V
Reverse Breakdown Voltage Tolerance ( ISHUNT = 130µA)
LM4030A-4.096
(A Grade - 0.05%)
(B Grade - 0.10%)
(C Grade - 0.15%)
-0.05
-0.10
-0.15
0.05
0.10
0.15
130
%
%
LM4030B-4.096
LM4030C-4.096
%
IRMIN
TC
Minimum Operating Current
Temperature Coefficient (Note 6)
LM4030A-4.096
µA
10
20
20
30
ppm / °C
ppm / °C
ppm / °C
ppm / °C
ppm / mA
0°C ≤ TJ ≤ + 85°C
-40°C ≤ TJ ≤ +125°C
-40°C ≤ TJ ≤ +125°C
-40°C ≤ TJ ≤ +125°C
160µA ≤ ISHUNT ≤ 30mA
LM4030B-4.096
LM4030C-4.096
Reverse Breakdown Voltage
Change with Current
15
95
ΔVREF/ΔILOAD
Long Term Stability (Note 7)
Thermal Hysteresis (Note 8)
Output Noise Voltage (Note 9)
1000 Hrs, TA = 30°C
40
75
ppm
ppm
µVPP
ΔVREF
VHYST
-40°C ≤ TJ ≤ +125°C
0.1 Hz to 10 Hz
VN
165
Note 1: Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. Operating Ratings indicate conditions for which the device is
intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications, see Electrical Characteristics.
Note 2: Without PCB copper enhancements. The maximum power dissipation must be de-rated at elevated temperatures and is limited by TJMAX (maximum
junction temperature), θJ-A (junction to ambient thermal resistance) and TA (ambient temperature). The maximum power dissipation at any temperature is:
PDissMAX = (TJMAX - TA) /θJ-A up to the value listed in the Absolute Maximum Ratings. θJ-A for SOT23-5 package is 220°C/W, TJMAX = 125°C.
Note 3: The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin.
Note 4: Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlation using Statistical Quality
Control.
Note 5: Typical numbers are at 25°C and represent the most likely parametric norm.
Note 6: Temperature coefficient is measured by the "Box" method; i.e., the maximum ΔVREF is divided by the maximum ΔT.
Note 7: Long term stability is VREF @25°C measured during 1000 hrs. This measurement is taken for IR = 500 µA.
Note 8: Thermal hysteresis is defined as the change in +25°C output voltage before and after cycling the device from (-40°C to 125°C) eight times.
Note 9: Low frequency peak-to-peak noise measured using first-order 0.1 Hz HPF and second-order 10 Hz LPF.
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4
Typical Performance Characteristics for 2.5V
Output Voltage vs Temperature
0.1 - 10 Hz Peak-to-Peak Noise
30046303
30046332
Start Up - 120 µA
Start Up - 50 mA
30046305
30046304
Reverse Breakdown Voltage Change with Current
Reverse Dynamic Impedance vs Frequency
30046314
30046340
5
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Typical Performance Characteristics for 4.096V
Output Voltage vs Temperature
0.1 - 10 Hz Peak-to-Peak Noise
30046306
30046349
Start Up - 130 µA
Start Up - 50 mA
30046308
30046307
Reverse Breakdown Voltage Change with Current
Reverse Dynamic Impedance vs Frequency
30046312
30046341
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6
Typical Performance Characteristics
Forward Characteristic
Load Transient Response
30046313
30046311
Minimum Operating Current
Noise Spectrum
30046316
30046317
Thermal Hysteresis Distribution
Output Voltage vs Thermal Cycle (-40°C to 125°C)
30046351
30046330
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Long Term Stability (TA = 25°C)
Long Term Stability (TA =125°C)
30046347
30046348
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8
The LM4030 is designed to operate with or without a bypass
capacitor (COUT in Figure 1) and is stable with capacitors of
up to 10 μF. The use of a bypass capacitor can improve tran-
sient response and reduce broadband noise. Additionally, a
bypass capacitor will counter the rising reverse dynamic
impedance at higher frequencies improving noise immunity
(see Figure 3).
Application Information
THEORY OF OPERATION
The LM4030 is an ultra-high precision shunt voltage refer-
ence, having exceptionally high initial accuracy (0.05%) and
temperature stability (10ppm/°C). The LM4030 is available
with fixed voltage options of 2.5V and 4.096V. Despite the tiny
SOT23 package, the LM4030 exhibits excellent thermal hys-
teresis (75ppm) and long-term stability (25ppm). The LM4030
is designed to operate without an external capacitor, but any
capacitor up to 10 µF may be used. The LM4030 can be pow-
ered off as little as 120 µA (max) but is capable of shunting
up to 30 mA continuously. The typical application circuit for
the LM4030 is shown in Figure 1.
30046345
FIGURE 3. Reverse Dynamic Impedance vs COUT
30046301
As with other regulators, an external capacitor reduces the
amplitude of the VREF transient when a sudden change in
loading takes place. The capacitor should be placed as close
to the part as possible to reduce the effects of unwanted board
parasitics.
FIGURE 1. Typical Application Circuit
COMPONENT SELECTION
A resistor must be chosen to set the maximum operating cur-
rent for the LM4030 (RZ in Figure 1). The value of the resistor
can be calculated using the following equation:
THERMAL HYSTERESIS
Thermal hysteresis is the defined as the change in output
voltage at 25°C after some deviation from 25°C. This is to say
that thermal hysteresis is the difference in output voltage be-
tween two points in a given temperature profile. An illustrative
temperature profile is shown in Figure 4.
RZ = (VIN - VREF)/(IMIN_OPERATING + ILOAD_MAX
)
RZ is chosen such that the total current flowing through RZ is
greater than the maximum load current plus the minimum op-
erating current of the reference itself. This ensures that the
reference is never starved for current. Running the LM4030
at higher currents is advantageous for reducing noise. The
reverse dynamic impedance of the VREF node scales inverse-
ly with the shunted current (see Figure 2) leading to higher
rejection of noise emanating from the input supply and from
EMI (electro-magnetic interferrence).
30046318
FIGURE 4. Illustrative Temperature Profile
This may be expressed analytically as the following:
Where
VHYS = Thermal hysteresis expressed in ppm
VREF = Nominal preset output voltage
VREF1 = VREF before temperature fluctuation
30046346
FIGURE 2. Reverse Dynamic Impedance vs IOUT
9
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VREF2 = VREF after temperature fluctuation.
shifts in VREF arise due to offsets between matched devices
within the regulation loop. Both passive and active devices
naturally experience drift over time and stress and tempera-
ture gradients across the silicon die also generate offset. The
LM4030 incorporates a dynamic offset cancellation scheme
which compensates for offsets developing within the regula-
tion loop. This gives the LM4030 excellent long-term stability
(40 ppm typical) and thermal hysteresis performance (75ppm
typical), as well as substantial immunity to PCB stress effects,
despite being packaged in a tiny SOT23.
The LM4030 features a low thermal hysteresis of 75 ppm
(typical) from -40°C to 125°C after 8 temperature cycles.
TEMPERATURE COEFFICIENT
Temperature drift is defined as the maximum deviation in out-
put voltage over the temperature range. This deviation over
temperature may be illustrated as shown in Figure 5.
EXPRESSION OF ELECTRICAL CHARACTERISTICS
Electrical characteristics are typically expressed in mV, ppm,
or a percentage of the nominal value. Depending on the ap-
plication, one expression may be more useful than the other.
To convert one quantity to the other one may apply the fol-
lowing:
ppm to mV error in output voltage:
30046320
FIGURE 5. Illustrative VREF vs Temperature Profile
Where:
VREF is in volts (V) and VERROR is in milli-volts (mV).
Bit error (1 bit) to voltage error (mV):
Temperature coefficient may be expressed analytically as the
following:
VREF is in volts (V), VERROR is in milli-volts (mV), and n is the
number of bits.
TD = Temperature drift
VREF = Nominal preset output voltage
mV to ppm error in output voltage:
VREF_MIN
temperature range
VREF_MAX Maximum output voltage over operating
=
Minimum output voltage over operating
=
temperature range
ΔT = Operating temperature range.
The LM4030 features a low temperature drift of 10ppm (max)
Where:
VREF is in volts (V) and VERROR is in milli-volts (mV).
Voltage error (mV) to percentage error (percent):
to 30ppm (max), depending on the grade.
DYNAMIC OFFSET CANCELLATION AND LONG TERM
STABILITY
Aside from initial accuracy and drift performance, other spec-
ifications such as thermal hysteresis and long-term stability
can affect the accuracy of a voltage reference, especially over
the lifetime of the application. The reference voltage can also
shift due to board stress once the part is mounted onto the
PCB and during subsequent thermal cycles. Generally, these
Where:
VREF is in volts (V) and VERROR is in milli-volts (mV).
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10
PRINTED CIRCUIT BOARD and LAYOUT
CONSIDERATIONS
voltage drop proportional to load current and should be min-
imized. The LM4030 should be placed as close to the load it
is driving as the layout will allow. The location of RZ is not
important, but COUT should be as close to the LM4030 as
possible so added ESR does not degrade the transient per-
formance.
The LM4030 has a very small change in reverse voltage with
current (25ppm/mA typical) so large variations in load current
(up to 50mA) should not appreciably shift VREF. Parasitic re-
sistance between the LM4030 and the load introduces a
11
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Physical Dimensions inches (millimeters) unless otherwise noted
SOT23-5 Package
NS Package Number MF05A
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12
Notes
13
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Notes
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