LM613IWMX [NSC]
IC DUAL OP-AMP, 7000 uV OFFSET-MAX, 0.5 MHz BAND WIDTH, PDSO16, SOP-16, Operational Amplifier;
| 型号： | LM613IWMX |
| 厂家： | 
National Semiconductor |
| 描述： | IC DUAL OP-AMP, 7000 uV OFFSET-MAX, 0.5 MHz BAND WIDTH, PDSO16, SOP-16, Operational Amplifier 放大器 光电二极管 |
| 文件： | 总25页 (文件大小：1087K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
August 2000
LM613
Dual Operational Amplifiers, Dual Comparators, and
Adjustable Reference
General Description
Features
The LM613 consists of dual op-amps, dual comparators, and
a programmable voltage reference in a 16-pin package. The
op-amps out-performs most single-supply op-amps by pro-
viding higher speed and bandwidth along with low supply
current. This device was specifically designed to lower cost
and board space requirements in transducer, test, measure-
ment, and data acquisition systems.
OP AMP
n Low operating current (Op Amp): 300 µA
n Wide supply voltage range: 4V to 36V
n Wide common-mode range: V− to (V+ − 1.8V)
n Wide differential input voltage: 36V
n Available in plastic package rated for Military Temp.
Range Operation
Combining a stable voltage reference with wide output swing
op-amps makes the LM613 ideal for single supply transduc-
ers, signal conditioning and bridge driving where large
common-mode-signals are common. The voltage reference
consists of a reliable band-gap design that maintains low
dynamic output impedance (1Ω typical), excellent initial tol-
erance (0.6%), and the ability to be programmed from 1.2V
to 6.3V via two external resistors. The voltage reference is
very stable even when driving large capacitive loads, as are
commonly encountered in CMOS data acquisition systems.
REFERENCE
n Adjustable output voltage: 1.2V to 6.3V
n Tight initial tolerance available: 0.6%
n Wide operating current range: 17 µA to 20 mA
n Tolerant of load capacitance
Applications
n Transducer bridge driver
n Process and mass flow control systems
n Power supply voltage monitor
n Buffered voltage references for A/D’s
™
As a member of National’s Super-Block family, the LM613
is a space-saving monolithic alternative to a multi-chip solu-
tion, offering a high level of integration without sacrificing
performance.
Connection Diagrams
E Package Pinout
00922601
00922648
Top View
Ultra Low Noise, 10.00V Reference.
Total output noise is typically 14 µVRMS
.
00922643
*10k must be low
t.c. trimpot
™
Super-Block is a trademark of National Semiconductor Corporation.
© 2004 National Semiconductor Corporation
DS009226
www.national.com
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Thermal Resistance,
Junction-to-Ambient (Note 5)
N Package
100˚C/W
150˚C/W
WM Package
Soldering Information (10 Sec.)
N Package
Voltage on Any Pin Except VR
(referred to V−pin)
260˚C
220˚C
1 kV
WM Package
(Note 2)
36V (Max)
(Note 3)
−0.3V (Min)
ESD Tolerance (Note 6)
Current through Any Input Pin
& VR Pin
20 mA
Operating Temperature Range
Differential Input Voltage
Military and Industrial
Commercial
LM613AI, LM613BI:
LM613AM, LM613M:
LM613C:
−40˚C to +85˚C
36V
32V
−55˚C to +125˚C
0˚C ≤ TJ ≤ +70˚C
Storage Temperature Range
Maximum Junction Temp.(Note 4)
−65˚C ≤ TJ ≤ +150˚C
150˚C
Electrical Characteristics
These specifications apply for V− = GND = 0V, V+ = 5V, VCM = VOUT = 2.5V, IR = 100 µA, FEEDBACK pin shorted to GND,
unless otherwise specified. Limits in standard typeface are for TJ = 25˚C; limits in boldface type apply over the Operating
Temperature Range.
LM613AM
LM613AI
Limits
LM613M
LM613I
LM613C
Limits
(Note 8)
1000
1070
2.8
Typical
Symbol
Parameter
Conditions
(Note 7)
Units
(Note 8)
∞
IS
VS
Total Supply Current
Supply Voltage Range
RLOAD
=
,
450
550
2.2
2.9
46
940
1000
2.8
3
µA (Max)
µA (Max)
V (Min)
4V ≤ V+ ≤ 36V (32V for LM613C)
3
V (Min)
36
32
V (Max)
V (Max)
43
36
32
OPERATIONAL AMPLIFIERS
VOS1
VOS Over Supply
4V ≤ V+ ≤ 36V
1.5
2.0
1.0
1.5
15
3.5
6.0
3.5
6.0
5.0
7.0
5.0
7.0
mV (Max)
mV (Max)
mV (Max)
mV (Max)
µV/˚C
(4V ≤ V+ ≤ 32V for LM613C)
VOS2
VOS Over VCM
VCM = 0V through VCM
=
(V+ − 1.8V), V+ = 30V, V− = 0V
Average VOS Drift
(Note 8)
(Max)
IB
Input Bias Current
10
11
25
30
4
35
40
4
nA (Max)
nA (Max)
nA (Max)
nA (Max)
IOS
Input Offset Current
Average Offset Current
0.2
0.3
5
5
4
pA/˚C
RIN
CIN
en
Input Resistance
Input Capacitance
Voltage Noise
Differential
1000
6
MΩ
Common-Mode
pF
f = 100 Hz, Input Referred
74
In
Current Noise
f = 100 Hz, Input Referred
58
CMRR
Common-Mode
Rejection Ratio
V+ = 30V, 0V ≤ VCM ≤ (V+ − 1.8V)
95
80
75
dB (Min)
dB (Min)
CMRR = 20 log (∆VCM/∆VOS
)
90
75
70
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2
Electrical Characteristics (Continued)
These specifications apply for V− = GND = 0V, V+ = 5V, VCM = VOUT = 2.5V, IR = 100 µA, FEEDBACK pin shorted to GND,
unless otherwise specified. Limits in standard typeface are for TJ = 25˚C; limits in boldface type apply over the Operating
Temperature Range.
LM613AM
LM613AI
Limits
LM613M
LM613I
LM613C
Limits
Typical
Symbol
Parameter
Conditions
(Note 7)
Units
(Note 8)
(Note 8)
OPERATIONAL AMPLIFIERS
PSRR
Power Supply
Rejection Ratio
Open Loop
4V ≤ V+ ≤ 30V, VCM = V+/2,
110
100
80
75
75
70
dB (Min)
dB (Min)
V/mV
PSRR = 20 log (∆V+/VOS
)
AV
RL = 10 kΩ to GND, V+ = 30V,
500
100
40
94
Voltage Gain
Slew Rate
5V ≤ VOUT ≤ 25V
50
40
(Min)
SR
V+ = 30V (Note 9)
0.70
0.65
0.8
0.55
0.45
0.50
0.45
V/µs
GBW
VO1
Gain Bandwidth
CL = 50 pF
MHz
0.5
MHz
Output Voltage
Swing High
RL = 10 kΩ to GND,
V+ − 1.4
V+ − 1.6
V− + 0.8
V− + 0.9
25
V+ − 1.7
V+ − 1.9
V− + 0.9
V− + 1.0
V+ − 1.8
V+ − 1.9
V− + 0.95
V− + 1.0
V (Min)
V+ = 36V (32V for LM613C)
RL = 10 kΩ to V+,
V (Min)
VO2
Output Voltage
Swing Low
V (Max)
V (Max)
mA (Min)
mA (Min)
mA (Min)
mA (Min)
mA (Max)
mA (Max)
mA (Max)
mA (Max)
V+ = 36V (32V for LM613C)
IOUT
ISINK
ISHORT
Output Source Current
VOUT = 2.5V, V+ = 0V,
20
16
IN
V− = −0.3V
15
13
13
IN
Output Sink Current
Short Circuit Current
VOUT = 1.6V, V+ = 0V,
17
14
13
IN
V− = 0.3V
9
8
8
IN
VOUT = 0V,V+ = 3V,
30
50
50
IN
V− = 2V
40
60
60
IN
VOUT = 5V, V+ = 2V,
30
60
70
IN
V− = 3V
32
80
90
IN
COMPARATORS
VOS
Offset Voltage
4V ≤ V+ ≤ 36V (32V for LM613C),
RL = 15 kΩ
1.0
2.0
1.0
3.0
6.0
3.0
5.0
7.0
5.0
mV (Max)
mV (Max)
mV (Max)
Offset Voltage
over VCM
0V ≤ VCM ≤ 36V
V+ = 36V, (32V for LM613C)
1.5
15
6.0
7.0
mV (Max)
µV/˚C
Average Offset
Voltage Drift
(Max)
IB
Input Bias Current
5
25
30
4
35
40
4
nA (Max)
nA (Max)
nA (Max)
nA (Max)
V/mV
8
IOS
AV
Input Offset Current
Voltage Gain
0.2
0.3
500
5
5
RL = 10 kΩ to 36V (32V for
LM613C)
2V ≤ VOUT ≤ 27V
100
1.5
2.0
20
V/mV
µs
tr
Large Signal
V+ = 1.4V, V− = TTL Swing,
IN
IN
Response Time
Output Sink Current
RL = 5.1 kΩ
µs
ISINK
V+ = 0V, V− = 1V,
10
8
10
8
mA (Min)
mA (Min)
mA (Min)
mA (Min)
IN
IN
VOUT = 1.5V
13
VOUT = 0.4V
2.8
2.4
1.0
0.5
0.8
0.5
3
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Electrical Characteristics (Continued)
These specifications apply for V− = GND = 0V, V+ = 5V, VCM = VOUT = 2.5V, IR = 100 µA, FEEDBACK pin shorted to GND,
unless otherwise specified. Limits in standard typeface are for TJ = 25˚C; limits in boldface type apply over the Operating
Temperature Range.
LM613AM
LM613AI
Limits
LM613M
LM613I
LM613C
Limits
Typical
Symbol
Parameter
Conditions
(Note 7)
Units
(Note 8)
(Note 8)
COMPARATORS
ILEAK
Output Leakage
Current
V+ = 1V, V− = 0V,
0.1
10
10
µA (Max)
µA (Max)
IN
IN
VOUT = 36V (32V for LM613C)
0.2
VOLTAGE REFERENCE
VR Voltage Reference
(Note 10)
1.244
1.2365
1.2515
( 0.6%)
80
1.2191
1.2689
( 2%)
150
V (Min)
V (Max)
Average Temp. Drift
Hysteresis
(Note 11)
(Note 12)
10
ppm/˚C
(Max)
3.2
µV/˚C
VR Change
with Current
VR(100 µA) − VR(17 µA)
0.05
1
1
mV (Max)
mV (Max)
0.1
1.1
1.1
V
R(10 mA) − VR(100 µA)
1.5
2.0
0.2
0.6
2.5
2.8
5
5.5
0.56
13
5
5.5
0.56
13
mV (Max)
mV (Max)
Ω (Max)
(Note 13)
R
Resistance
∆VR(10 0.1 mA)/9.9 mA
→
∆VR(100 17 µA)/83 µA
Ω (Max)
→
VR Change
VR(Vro = Vr) − VR(Vro = 6.3V)
(5.06V between Anode and
FEEDBACK)
7
7
mV (Max)
mV (Max)
with High VRO
10
10
VR Change with
VANODE Change
VR(V+ = 5V) − VR(V+ = 36V)
(V+ = 32V for LM613C)
0.1
0.1
0.01
0.01
22
1.2
1.3
1
1.2
1.3
1
mV (Max)
mV (Max)
mV (Max)
mV (Max)
nA (Max)
nA (Max)
µVRMS
V
R(V+ = 5V) − VR(V+ = 3V)
1.5
35
40
1.5
50
55
IFB
en
FEEDBACK Bias
Current
VANODE ≤ VFB ≤ 5.06V
29
VR Noise
10 Hz to 10 kHz,
VRO = VR
30
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4
Electrical Characteristics (Continued)
Note 1: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the
device beyond its rated operating conditions.
+
Note 2: Input voltage above V is allowed. As long as one input pin voltage remains inside the common-mode range, the comparator will deliver the correct output.
Note 3: More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a diode drop below
−
V , a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below the Maximum Rating. Operation is undefined
and unpredictable when any parasitic diode or transistor is conducting.
Note 4: Simultaneous short-circuit of multiple comparators while using high supply voltages may force junction temperature above maximum, and thus should not
be continuous.
Note 5: Junction temperature may be calculated using T = T + P
θ . The given thermal resistance is worst-case for packages in sockets in still air. For packages
JA
J
A
D
soldered to copper-clad board with dissipation from one comparator or reference output transistor, nominal θ is 90˚C/W for the N package, and 135˚C/W for the
JA
WM package.
Note 6: Human body model, 100 pF discharged through a 1.5 kΩ resistor.
Note 7: Typical values in standard typeface are for T = 25˚C; values in bold face type apply for the full operating temperature range. These values represent the
J
most likely parametric norm.
Note 8: All limits are guaranteed at room temperature (standard type face) or at operating temperature extremes (bold type face).
Note 9: Slew rate is measured with the op amp in a voltage follower configuration. For rising slew rate, the input voltage is driven from 5V to 25V, and the output
@
voltage transition is sampled at 10V and 20V. For falling slew rate, the input voltage is driven from 25V to 5V, and the output voltage transition is sampled at 20V
and 10V.
Note 10: V is the Cathode-to-feedback voltage, nominally 1.244V.
R
Note 11: Average reference drift is calculated from the measurement of the reference voltage at 25˚C and at the temperature extremes. The drift, in ppm/˚C, is
6
10 •∆V /(VR[25˚C]•∆T ), where ∆V is the lowest value subtracted from the highest, V
is the value at 25˚C, and ∆T is the temperature range. This parameter
R
J
R
R[25˚C]
J
is guaranteed by design and sample testing.
Note 12: Hysteresis is the change in V caused by a change in T , after the reference has been “dehysterized”. To dehysterize the reference; that is minimize the
R
J
hysteresis to the typical value, its junction temperature should be cycled in the following pattern, spiraling in toward 25˚C: 25˚C, 85˚C, −40˚C, 70˚C, 0˚C, 25˚C.
Note 13: Low contact resistance is required for accurate measurement.
5
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Simplified Schematic Diagrams
Op Amp
00922602
Comparator
00922603
Reference/Bias
00922604
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6
Typical Performance Characteristics (Reference)
TJ = 25˚C, FEEDBACK pin shorted to V− = 0V, unless
otherwise noted
Reference Voltage vs Temp.
Reference Voltage Drift
00922650
00922652
00922654
00922649
Accelerated Reference
Voltage Drift vs Time
Reference Voltage vs
Current and Temperature
00922651
Reference Voltage vs
Current and Temperature
Reference Voltage vs
Reference Current
00922653
7
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Typical Performance Characteristics (Reference) TJ = 25˚C, FEEDBACK pin shorted to V−
=
0V, unless otherwise noted (Continued)
Reference Voltage vs
Reference Current
Reference AC
Stability Range
00922656
00922655
FEEDBACK Current vs
FEEDBACK Current vs
FEEDBACK-to-Anode Voltage
FEEDBACK-to-Anode Voltage
00922657
00922658
Reference Noise Voltage
vs Frequency
Reference Small-Signal
Resistance vs Frequency
00922659
00922660
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8
Typical Performance Characteristics (Reference) TJ = 25˚C, FEEDBACK pin shorted to V−
=
0V, unless otherwise noted (Continued)
Reference Voltage with
Reference Power-Up Time
FEEDBACK Voltage Step
00922661
00922662
Reference Step Response
for 100 µA ∼ 10 mA
Current Step
Reference Voltage with
100 ∼ 12 µA Current Step
00922663
00922664
Reference Voltage Change
with Supply Voltage Step
Reference Change vs
Common-Mode Voltage
00922665
00922666
9
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Typical Performance Characteristics (Op Amps)
V+ = 5V, V− = GND = 0V, VCM = V+/2, VOUT = V+/2, TJ =
25˚C, unless otherwise noted
Input Common-Mode
Voltage Range vs
Temperature
VOS vs Junction
Temperature
00922668
00922667
Input Bias Current vs
Common-Mode Voltage
Large-Signal
Step Response
00922669
00922670
Output Voltage Swing
vs Temp. and Current
Output Source Current vs
Output Voltage and Temp.
00922672
00922671
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10
Typical Performance Characteristics (Op Amps) V+ = 5V, V− = GND = 0V, VCM = V+/2, VOUT
= V+/2, TJ = 25˚C, unless otherwise noted (Continued)
Output Sink Current vs
Output Voltage
Output Swing,
Large Signal
00922674
00922676
00922678
00922673
Output Impedance vs
Frequency and Gain
Small Signal Pulse
Response vs Temp.
00922675
Small-Signal Pulse
Response vs Load
Op Amp Voltage Noise
vs Frequency
00922677
11
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Typical Performance Characteristics (Op Amps) V+ = 5V, V− = GND = 0V, VCM = V+/2, VOUT
= V+/2, TJ = 25˚C, unless otherwise noted (Continued)
Op Amp Current Noise
vs Frequency
Small-Signal Voltage Gain vs
Frequency and Temperature
00922679
00922680
Small-Signal Voltage Gain
vs Frequency and Load
Follower Small-Signal
Frequency Response
00922681
00922682
Common-Mode Input
Power Supply Current
Voltage Rejection Ratio
vs Power Supply Voltage
00922684
00922683
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12
Typical Performance Characteristics (Op Amps) V+ = 5V, V− = GND = 0V, VCM = V+/2, VOUT
= V+/2, TJ = 25˚C, unless otherwise noted (Continued)
Positive Power Supply
Voltage Rejection Ratio
Negative Power Supply
Voltage Rejection Ratio
00922685
00922687
00922689
00922686
Input Offset Current vs
Junction Temperature
Slew Rate vs Temperature
00922688
Input Bias Current vs
Junction Temperature
13
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Typical Performance Characteristics (Comparators)
Input Bias Current vs
Output Sink Current
Common-Mode Voltage
00922611
00922610
Comparator
Comparator
Response Times—Inverting
Input, Positive Transition
Response Times—Inverting
Input, Negative Transition
00922612
00922613
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14
Typical Performance Characteristics (Comparators) (Continued)
Comparator
Comparator
Response Times—Non-Inverting
Input, Positive Transition
Response Times—Non-Inverting
Input, Negative Transition
00922614
00922615
Comparator
Comparator
Response Times—Inverting
Input, Positive Transition
Response Times—Inverting
Input, Negative Transition
00922616
00922617
15
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Typical Performance Characteristics (Comparators) (Continued)
Comparator
Comparator
Response Times—Non-Inverting
Input, Positive Transition
Response Times—Non-Inverting
Input, Negative Transition
00922618
00922619
Typical Performance Distributions
Average VOS Drift
Average VOS Drift
Military Temperature Range
Industrial Temperature Range
00922620
00922621
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16
Typical Performance Distributions (Continued)
Average VOS Drift
Average IOS Drift
Commercial Temperature Range
Military Temperature Range
00922622
00922623
Average IOS Drift
Industrial Temperature Range
Op Amp Voltage
Noise Distribution
00922624
00922627
17
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Typical Performance Distributions (Continued)
Average IOS Drift
Commercial Temperature Range
Op Amp Current
Noise Distribution
00922625
00922628
Voltage Reference Broad-Band
Noise Distribution
00922629
FIGURE 1. Voltage Associated with Reference
(current source Ir is external)
The reference equivalent circuit reveals how Vr is held at the
constant 1.2V by feedback, and how the FEEDBACK pin
passes little current.
To generate the required reverse current, typically a resistor
is connected from a supply voltage higher than the reference
voltage. Varying that voltage, and so varying Ir, has small
effect with the equivalent series resistance of less than an
ohm at the higher currents. Alternatively, an active current
source, such as the LM134 series, may generate Ir.
00922626
Application Information
VOLTAGE REFERENCE
Reference Biasing
The voltage reference is of a shunt regulator topology that
models as a simple zener diode. With current Ir flowing in the
“forward” direction there is the familiar diode transfer func-
tion. Ir flowing in the reverse direction forces the reference
voltage to be developed from cathode to anode. The cath-
ode may swing from a diode drop below V− to the reference
voltage or to the avalanche voltage of the parallel protection
diode, nominally 7V. A 6.3V reference with V+ = 3V is al-
lowed.
00922630
FIGURE 2. Reference Equivalent Circuit
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18
Application Information (Continued)
00922631
00922633
FIGURE 3. 1.2V Reference
R1 = Vr/I = 1.24/32µ = 39k
R2 = R1 {(Vro/Vr) − 1} = 39k {(5/1.24) − 1)} = 118k
Capacitors in parallel with the reference are allowed. See the
Reference AC Stability Range typical curve for capacitance
values—from 20 µA to 3 mA any capacitor value is stable.
With the reference’s wide stability range with resistive and
capacitive loads, a wide range of RC filter values will perform
noise filtering.
FIGURE 5. Resistors R1 and R2 Program Reference
Output Voltage to be 5V
Understanding that Vr is fixed and that voltage sources,
resistors, and capacitors may be tied to the FEEDBACK pin,
a range of Vr temperature coefficients may be synthesized.
Adjustable Reference
The FEEDBACK pin allows the reference output voltage,
Vro, to vary from 1.24V to 6.3V. The reference attempts to
hold Vr at 1.24V. If Vr is above 1.24V, the reference will
conduct current from Cathode to Anode; FEEDBACK current
always remains low. If FEEDBACK is connected to Anode,
then Vro = Vr = 1.24V. For higher voltages FEEDBACK is
held at a constant voltage above Anode—say 3.76V for Vro
= 5V. Connecting a resistor across the constant Vr generates
a current I=R1/Vr flowing from Cathode into FEEDBACK
node. A Thevenin equivalent 3.76V is generated from FEED-
BACK to Anode with R2=3.76/I. Keep I greater than one
thousand times larger than FEEDBACK bias current for
00922634
<
0.1% error—I≥32 µA for the military grade over the military
temperature range (I≥5.5 µA for a 1% untrimmed error for a
FIGURE 6. Output Voltage has Negative Temperature
Coefficient (TC) if R2 has Negative TC
commercial part).
00922632
00922635
FIGURE 4. Thevenin Equivalent of Reference
with 5V Output
FIGURE 7. Output Voltage has Positive TC
if R1 has Negative TC
19
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Application Information (Continued)
00922639
FIGURE 11. Negative-TC Current Source
00922636
Reference Hysteresis
FIGURE 8. Diode in Series with R1 Causes Voltage
Across R1 and R2 to be Proportional to Absolute
Temperature (PTAT)
The reference voltage depends, slightly, on the thermal his-
tory of the die. Competitive micro-power products vary—
always check the data sheet for any given device. Do not
assume that no specification means no hysteresis.
Connecting a resistor across Cathode-to-FEEDBACK cre-
ates a 0 TC current source, but a range of TCs may be
synthesized.
OPERATIONAL AMPLIFIERS AND COMPARATORS
Any amp, comparator, or the reference may be biased in any
way with no effect on the other sections of the LM613,
except when a substrate diode conducts, see Electrical
Characteristics (Note 1). For example, one amp input may
be outside the common-mode range, another amp may be
operating as a comparator, and all other sections may have
all terminals floating with no effect on the others. Tying
inverting input to output and non-inverting input to V− on
unused amps is preferred. Unused comparators should have
non-inverting input and output tied to V+, and inverting input
tied to V−. Choosing operating points that cause oscillation,
such as driving too large a capacitive load, is best avoided.
00922637
Op Amp Output Stage
These op amps, like the LM124 series, have flexible and
relatively wide-swing output stages. There are simple rules
to optimize output swing, reduce cross-over distortion, and
optimize capacitive drive capability:
I = Vr/R1 = 1.24/R1
FIGURE 9. Current Source is Programmed by R1
1. Output Swing: Unloaded, the 42 µA pull-down will bring
the output within 300 mV of V− over the military tempera-
ture range. If more than 42 µA is required, a resistor from
output to V− will help. Swing across any load may be
improved slightly if the load can be tied to V+, at the cost
of poorer sinking open-loop voltage gain.
2. Cross-Over Distortion: The LM613 has lower cross-over
distortion (a 1 VBE deadband versus 3 VBE for the
LM124), and increased slew rate as shown in the char-
acteristic curves. A resistor pull-up or pull-down will force
class-A operation with only the PNP or NPN output
transistor conducting, eliminating cross-over distortion.
00922638
3. Capacitive Drive: Limited by the output pole caused by
the output resistance driving capacitive loads, a pull-
down resistor conducting 1 mA or more reduces the
output stage NPN re until the output resistance is that of
the current limit 25Ω. 200 pF may then be driven without
oscillation.
FIGURE 10. Proportional-to-Absolute-Temperature
Current Source
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20
The offset voltage may increase when the output voltage is
low and the output current is less than 30 µA. Thus, for best
accuracy, the pull-up resistor value should be low enough to
allow the output transistor to sink more than 30 µA.
Application Information (Continued)
Comparator Output Stage
The comparators, like the LM139 series, have open-collector
output stages. A pull-up resistor must be added from each
output pin to a positive voltage for the output transistor to
switch properly. When the output transistor is OFF, the out-
put voltage will be this external positive voltage.
Op Amp and Comparator Input Stage
The lateral PNP input transistors, unlike those of most op
amps, have BVEBO equal to the absolute maximum supply
voltage. Also, they have no diode clamps to the positive
supply nor across the inputs. These features make the in-
puts look like high impedances to input sources producing
large differential and common-mode voltages.
For the output voltage to be under the TTL-low voltage
threshold when the output transistor is ON, the output cur-
rent must be less than 8 mA (over temperature). This im-
pacts the minimum value of pull-up resistor.
21
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Typical Applications
00922640
FIGURE 12. High Current, High Voltage Switch
00922641
FIGURE 13. High Speed Level Shifter. Response time is approximately
1.5 µs, where output is either approximately +V or −V.
00922643
*10k must be low
t.c. trimpot
FIGURE 14. Ultra Low Noise, 10.00V Reference. Total output noise is typically 14 µVRMS
.
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22
Typical Applications (Continued)
00922644
00922647
FIGURE 15. Basic Comparator
FIGURE 18. Comparator with
Hysteresis (∆VH
=
+V(1k/1M))
00922645
FIGURE 16. Basic Comparator with External Strobe
00922646
FIGURE 17. Wide-Input Range
Comparator with TTL Output
Ordering Information
Temperature Range
Reference
Tolerance & VOS
NSC
Drawing
Military
Industrial
Package
−55˚C ≤ TA ≤ +125˚C
LM613AMJ/883 (Note 14)
−40˚C ≤ TA ≤ +85˚C
0.6%
16-Pin
J16A
80 ppm/˚C Max.
VOS ≤ 3.5 mV
2.0%
Ceramic DIP
LM613IWM
16-Pin Wide
M16B
150 ppm/˚C Max.
VOS ≤ 5.0 mV Max.
LM613IWMX
Surface Mount
Note 14: A military RETS 613AMX electrical test specification is available on request. The Military screened parts can also be procured as a Standard Military
Drawing.
23
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Physical Dimensions inches (millimeters)
unless otherwise noted
16-Lead Ceramic Dual-In-Line Package (J)
Order Number LM613AMJ/883
NS Package Number J16A
16-Lead Small Outline Package (WM)
Order Number LM613IWM or LM613IWMX
NS Package Number M16B
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24
Notes
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NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL
COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and
whose failure to perform when properly used in
accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a
significant injury to the user.
2. A critical component is any component of a life
support device or system whose failure to perform
can be reasonably expected to cause the failure of
the life support device or system, or to affect its
safety or effectiveness.
BANNED SUBSTANCE COMPLIANCE
National Semiconductor certifies that the products and packing materials meet the provisions of the Customer Products
Stewardship Specification (CSP-9-111C2) and the Banned Substances and Materials of Interest Specification
(CSP-9-111S2) and contain no ‘‘Banned Substances’’ as defined in CSP-9-111S2.
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Support Center
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Fax: +49 (0) 180-530 85 86
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National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
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