LME49726MY [NSC]
High Current, Low Distortion, Rail-to-Rail Output Audio Operational Amplifier; 高电流，低失真，轨到轨输出音频运算放大器
| 型号： | LME49726MY |
| 厂家： | 
National Semiconductor |
| 描述： | High Current, Low Distortion, Rail-to-Rail Output Audio Operational Amplifier |
| 文件： | 总22页 (文件大小：532K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
May 25, 2010
LME49726
High Current, Low Distortion, Rail-to-Rail Output
Audio Operational Amplifier
±3.7V/μs (typ)
6.25MHz (typ)
120dB (typ)
0.2pA (typ)
■ꢀSlew Rate
General Description
The LME49726 is a low distortion, low noise rail-to-rail output
audio operational amplifier optimized and fully specified for
high performance, high fidelity applications. The LME49726
delivers superior audio signal amplification for outstanding
audio performance. The LME49726 has a very low THD+N to
easily satisfy demanding audio applications. To ensure that
the most challenging loads are driven without compromise,
the LME49726 provides output current greater than 300mA
at 5V. Further, dynamic range is maximized by an output
stage that drives 2kΩ loads to within 4mV of either power
supply voltage.
■ꢀGain Bandwidth Product
■ꢀOpen Loop Gain (RL = 10kΩ)
■ꢀInput Bias Current
■ꢀInput Offset Voltage
■ꢀPSRR (DC)
0.5mV (typ)
104dB (typ)
Features
Rail-to-rail output
■
Easily drives 2kΩ loads to within 4mV of each power
supply voltage rail
The LME49726 has a supply range of 2.5V to 5.5V. Over this
supply range the LME49726’s input circuitry maintains excel-
lent common-mode and power supply rejection, as well as
maintaining its low input bias current. The LME49726 is unity
gain stable.
■
Optimized for superior audio signal fidelity
Output short circuit protection
■
■
■
■
High output drive (>300mA)
Available in mini-SOIC exposed-DAP package
Key Specifications
Applications
■ꢀPower Supply Voltage Range
2.5V to 5.5V
0.7mA (typ)
Portable audio amplification
■
■
■
■
■
■
■ꢀQuiescent Current per Amplifier
Preamplifiers and multimedia
at 5V
Equalization and crossover networks
■ꢀTHD+N, AV = 1,
fIN = 1kHz, RL = 10kΩ
Line drivers and receivers
Active filters
(VOUT = 3.5VP-P, VDD = 5.0V)
(VOUT = 1.5VP-P, VDD = 2.5V)
0.00008% (typ)
0.00002% (typ)
DAC I–V converter gain stage
ADC front-end signal conditioning
■
■ꢀEquivalent Input Noise
(f = 10k, A-weighted)
6.9nV/√Hz (typ)
300386p6
FIGURE 1. Inverting Configuration Split Supplies
© 2010 National Semiconductor Corporation
300386
www.national.com
Typical Connection, Pinout, and Package Marking
30038609
FIGURE 2. Inverting Configuration Single Supply
30038610
Order Number LME49726MY
See NS Package Number MUY08A
Package Marking
300386x7
Z = Assembly plant code
X = 1 Digit date code
TT = Lot traceability
ZA3 = LME49726
Ordering Information
Package Drawing
Order Number
LME49726MY
LME49726MYX
Package
Transport Media
MSL Level
Green Status
Number
MSOP EXPOSE
PAD
1000 units on tape
on reel
MUY08A
1
1
RoHS & no Sb/Br
RoHS & no Sb/Br
MSOP EXPOSE
PAD
3500 units on tape
on reel
MUY08A
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2
ESD Rating (Note 4)
ESD Rating (Note 5)
Junction Temperature
Thermal Resistance
ꢁθJA (MUY-08)
2000V
200V
150°C
Absolute Maximum Ratings (Note 1, Note
2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
72°C/W
Power Supply Voltage
Operating Ratings (Note 1)
VS = VSS-VDD
6V
−65°C to 150°C
(VSS) – 0.7V to (VDD) + 0.7V
Continuous
Temperature Range
Storage Temperature
Input Voltage
TMIN
≤
TA ≤ TMAX
−40°C ≤ TA ≤ 125°C
2.5V ≤ VS ≤ 5.5V
Supply Voltage Range
Output Short Circuit (Note 3)
Power Dissipation
Internally Limited
Electrical Characteristics (VDD = 5.0V and VDD = 2.5V) The following specifications apply for
the circuit shown in Figure 1. VDD = 5.0V and VDD = 2.5V, VSS = 0.0V, VCM = VDD/2, RL = 10kΩ, CLOAD = 20pF, fIN = 1kHz, BW =
20–20kHz, and TA = 25°C, unless otherwise specified.
LME49726
Units
Symbol
Parameter
Conditions
Typical
Limit
(Limits)
(Note 6)
(Note 7)
AV = –1, VOUT = 3.5Vp-p, VDD = 5V
RL = 600Ω
RL = 2kΩ
RL = 10kΩ
0.0008
0.0002
0.00008
%
%
%
THD+N
Total Harmonic Distortion + Noise
AV = –1, VOUT = 1.5Vp-p, VDD = 2.5V
RL = 600Ω
0.001
0.0008
0.0002
%
%
%
RL = 2kΩ
RL = 10kΩ
GBWP
SR
Gain Bandwidth Product
Slew Rate
6.25
3.7
5.0
2.5
MHz (min)
AV = +1, RL = 10kΩ
V/μs (min)
AV = 1V step
ns
ts
Settling time
0.1% error range
0.001% error range
800
1.2
μs
μVRMS
(max)
eN
fBW = 20Hz to 20kHz (A-weighted)
Equivalent Input Noise Voltage
0.7
1.25
f = 10kHz (A-weighted)
f = 1kHz (A-weighted)
f = 100Hz (A-weighted)
f = 1kHz
6.9
15
ꢀnV/√Hz
ꢀnV/√Hz
ꢀnV/√Hz
ꢀpA/√Hz
mV (max)
eN
Equivalent Input Noise Density
35
IN
Current Noise Density
Input Offset Voltage
0.75
0.5
VOS
VIN = VDD/2, VO = VDD/2, AV = 1
2.25
85
Average Input Offset Voltage Drift vs
Temperature
ΔVOS/ΔTemp
1.2
40°C ≤ TA ≤ 85°C
μV/°C
Power Supply Rejection Ratio
Channel-to-Channel Isolation
Input Bias Current
2.5 to 5.5V, VCM = 0, VDD/2
fIN = 1kHz
PSRR
ISOCH-CH
IB
104
94
dB (min)
dB
VCM = VDD/2
±0.2
pA
Input Bias Current Drift vs
Temperature
ΔIOS/ΔTemp
IOS
35
nA/°C
pA
–40°C ≤ TA ≤ 85°C
Input Offset Current
VCM = VDD/2
±0.2
VDD–1.6
VSS+0.1
VIN-CM
Common-Mode Input Voltage Range
V (min)
0.1V < VDD – 1.6V
VOUT = VDD/2
CMRR
1/f
Common Mode Rejection Ratio
1/f Corner Frequency
95
2
80
dB (min)
kHz
AVOL
Open-Loop Voltage Gain
120
100
dB (min)
3
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LME49726
Units
(Limits)
Symbol
Parameter
Conditions
Typical
Limit
(Note 6)
VDD–0.004
VSS +0.004
(Note 7)
V (min)
V (max)
RL = 2kΩ to VDD/2
VOUTSWING
Maximum Output Voltage Swing
VDD –0.33
VSS+0.33
V (min)
V (max)
RL = 16Ω to VDD/2
VOUT = 5V, VDD = 5V
VOUT = 2.5V, VDD = 2.5V
IOUT = 0mA, VDD = 5V
IOUT = 0mA, VDD = 2.5V
350
160
0.7
mA
mA
IOUT
Output Current
1.1
1.0
mA (max)
mA (max)
IS
Quiescent Current per Amplifier
0.64
Note 1: Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability
and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in
the Recommended Operating Conditions is not implied. The Recommended Operating Conditions indicate conditions at which the device is functional and the
device should not be operated beyond such conditions. All voltages are measured with respect to the ground pin, unless otherwise specified.
Note 2: The Electrical Characteristics tables list guaranteed specifications under the listed Recommended Operating Conditions except as otherwise modified
or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not guaranteed.
Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature, TA. The maximum
allowable power dissipation is PDMAX = (TJMAX - TA) / θJA or the number given in Absolute Maximum Ratings, whichever is lower. For the LME49726, see Power
Derating curve for additional information.
Note 4: Human body model, applicable std. JESD22-A114C.
Note 5: Machine model, applicable std. JESD22-A115-A.
Note 6: Typical values represent most likely parametric norms at TA = +25ºC, and at the Recommended Operation Conditions at the time of product
characterization and are not guaranteed.
Note 7: Datasheet min/max specification limits are guaranteed by test or statistical analysis.
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4
Typical Performance Characteristics
THD+N vs Output Voltage
VDD = 1.25V, VSS = –1.25V, RL = 600Ω
AV = –1, f = 1kHz, BW = 22–22kHz
THD+N vs Frequency
VDD = 1.25V, VSS = –1.25V, RL = 600Ω
VO = 1.5VP-P, BW = 22–80kHz
30038612
30038618
THD+N vs Output Voltage
VDD = 1.25V, VSS = –1.25V, RL = 10kΩ
AV = –1, f = 1kHz, BW = 22–22kHz
THD+N vs Frequency
VDD = 1.25V, VSS = –1.25V, RL = 10kΩ
VO = 1VP-P, BW = 22–80kHz
30038634
30038615
THD+N vs Output Voltage
VDD = 2.50V, VSS = –2.50V, RL = 600Ω
AV = –1, f = 1kHz, BW = 22–22kHz
THD+N vs Frequency
VDD = 2.50V, VSS = –2.50V, RL = 600Ω
VO = 3.5VP-P, BW = 22–80kHz
30038619
30038613
5
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THD+N vs Output Voltage
VDD = 2.50V, VSS = –2.50V, RL = 10kΩ
AV = –1, f = 1kHz, BW = 22–22kHz
THD+N vs Frequency
VDD = 2.50V, VSS = –2.50V, RL = 10kΩ
VO = 1VP-P, BW = 22–80kHz
30038635
30038616
THD+N vs Output Voltage
VDD = 2.75V, VSS = –2.75V, RL = 600Ω
AV = –1, f = 1kHz, BW = 22–22kHz
THD+N vs Frequency
VDD = 2.75V, VSS = –2.75V, RL = 600Ω
VO = 3.5VP-P, BW = 22–80kHz
30038620
30038636
THD+N vs Output Voltage
VDD = 2.75V, VSS = –2.75V, RL = 10kΩ
AV = –1, f = 1kHz, BW = 22–22kHz
THD+N vs Frequency
VDD = 2.75V, VSS = –2.75V, RL = 10kΩ
VO = 3.5VP-P, BW = 22–80kHz
30038611
30038617
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6
PSRR+ vs Frequency
VDD = 1.25V, VSS = –1.25V, VRIPPLE = 200mVP-P
Input terminated, BW = 22–80kHz
PSRR– vs Frequency
VDD = 1.25V, VSS = –1.25V, VRIPPLE = 200mVP-P
Input terminated, BW = 22–80kHz
30038621
30038624
PSRR+ vs Frequency
VDD = 2.50V, VEE = –2.50V, VRIPPLE = 200mVP-P
Input terminated, BW = 22–80kHz
PSRR– vs Frequency
VDD = 2.50V, VSS = –2.50V, VRIPPLE = 200mVP-P
Input terminated, BW = 22–80kHz
30038625
30038637
PSRR+ vs Frequency
VDD = 2.75V, VSS = –2.75V, VRIPPLE = 200mVP-P
Input terminated, BW = 22–80kHz
PSRR– vs Frequency
VDD = 2.75V, VSS = –2.75V, VRIPPLE = 200mVP-P
Input terminated, BW = 22–80kHz
30038623
30038638
7
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Output Voltage vs Supply Voltage
RL = 600Ω, AV = –1
f = 1kHz, THD+N = 1%, BW = 22–80kHz
Output Voltage vs Supply Voltage
RL = 10kΩ, AV = –1
f = 1kHz, THD+N = 1%, BW = 22–80kHz
30038633
30038632
Crosstalk vs Frequency
VDD = 2.50V, VSS = –2.50V, RL = 10kΩ
AV = –1, f = 1kHz, BW = 80kHz
Supply Current vs Supply Voltage
per Amplifier, RL = No Load, AV = –1
30038628
30038630
CMRR vs Frequency
VDD = 2.5V, VSS = –2.5V, VRIPPLE = 200mVP-P
30038639
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8
changes the amplifier's noise gain. The result is that the error
signal (distortion) is amplified by a factor of 101. Although the
amplifier's closed-loop gain is unaltered, the feedback avail-
able to correct distortion errors is reduced by 101. To ensure
minimum effects on distortion measurements, keep the value
of R1 low as shown in Figure 3.
Application Information
DISTORTION MEASUREMENTS
The vanishingly low residual distortion produced by
LME49726 is below the capabilities of all commercially avail-
able equipment. This makes distortion measurements just
slightly more difficult than simply connecting a distortion me-
ter to the amplifier's inputs and outputs. The solution. howev-
er, is quite simple: an additional resistor. Adding this resistor
extends the resolution of the distortion measurement equip-
ment.
This technique is verified by duplicating the measurements
with high closed loop gain and/or making the measurements
at high frequencies. Doing so, produces distortion compo-
nents that are within measurement equipment capabilities.
This datasheet's THD+N and IMD values were generated us-
ing the above described circuit connected to an Audio Preci-
sion System Two Cascade.
The LME49726's low residual is an input referred internal er-
ror. As shown in Figure 3, adding the 10Ω resistor connected
between athe amplifier's inverting and non-inverting inputs
300386x2
FIGURE 3. THD+N and IMD Distortion Test Circuit
OPERATING RATINGS AND BASIC DESIGN GUIDELINES
The LME49726 has a supply voltage range from +2.5V to
+5.5V single supply or ±1.25 to ±2.75V dual supply.
Bypassed capacitors for the supplies should be placed as
close to the amplifier as possible. This will help minimize any
inductance between the power supply and the supply pins. In
addition to a 10μF capacitor, a 0.1μF capacitor is also rec-
ommended in CMOS amplifiers.
The amplifier's inputs lead lengths should also be as short as
possible. If the op amp does not have a bypass capacitor, it
may oscillate.
BASIC AMPLIFIER CONFIGURATIONS
The LME49726 may be operated with either a single supply
or dual supplies. Figure 2 shows the typical connection for a
single supply inverting amplifier. The output voltage for a sin-
gle supply amplifier will be centered around the common-
mode voltage, VCM. Note, the voltage applied to the VCM
insures the output stays above ground. Typically, the VCM
should be equal to VDD/2. This is done by putting a resistor
divider circuit at this node, see Figure 4.
300386n3
FIGURE 4. Single Supply Inverting Op Amp
9
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Figure 5 shows the typical connection for a dual supply in-
verting amplifier. The output voltage is centered on zero.
Figure 6 shows the typical connection for the Buffer Amplifier
or also called a Voltage Follower. The Buffer is a unity gain
stable amplifier.
300386n1
FIGURE 6. Unity-Gain Buffer Configuration
300386n2
FIGURE 5. Dual Supply Inverting Configuration
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10
Typical Applications
NAB Preamp
NAB Preamp Voltage Gain vs Frequency
300386n5
AV = 34.5
F = 1 kHz
En = 0.38 μV
A Weighted
300386n4
AV = 34.5
F = 1 kHz
En = 0.38 μV
A Weighted
Balanced to Single Ended Converter
Adder/Subtracter
300386n7
300386n6
VO = V1 + V2 − V3 − V4
VO = V1–V2
Sine Wave Oscillator
300386n8
11
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Second Order High Pass Filter
(Butterworth)
Second Order Low Pass Filter
(Butterworth)
300386n9
300386o0
Illustration is f0 = 1 kHz
Illustration is f0 = 1 kHz
State Variable Filter
300386o1
Illustration is f0 = 1 kHz, Q = 10, ABP = 1
AC/DC Converter
300386o2
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12
2 Channel Panning Circuit (Pan Pot)
Line Driver
300386o4
300386o3
Tone Control
300386o5
Illustration is:
fL = 32 Hz, fLB = 320 Hz
fH =11 kHz, fHB = 1.1 kHz
300386o6
13
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RIAA Preamp
300386o8
Av = 35 dB
En = 0.33 μV
S/N = 90 dB
f = 1 kHz
A Weighted
A Weighted, VIN = 10 mV
@f = 1 kHz
Balanced Input Mic Amp
300386o7
Illustration is:
V0 = 101(V2 − V1)
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14
10 Band Graphic Equalizer
300386p0
fo (Hz)
32
C1
C2
R1
R2
0.12μF
0.056μF
0.033μF
0.015μF
8200pF
3900pF
2000pF
1100pF
510pF
4.7μF
3.3μF
75kΩ
68kΩ
62kΩ
68kΩ
62kΩ
68kΩ
68kΩ
62kΩ
68kΩ
51kΩ
500Ω
510Ω
510Ω
470Ω
470Ω
470Ω
470Ω
470Ω
510Ω
510Ω
64
125
250
500
1k
1.5μF
0.82μF
0.39μF
0.22μF
0.1μF
2k
4k
0.056μF
0.022μF
0.012μF
8k
16k
330pF
Note 8: At volume of change = ±12 dB
ꢀꢀQ = 1.7
ꢀꢀReference: “AUDIO/RADIO HANDBOOK”, National Semiconductor, 1980, Page 2–61
15
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LME49726 Bill of Materials
Description
Designator
Part Number
Manufacturer
Quantity/Brd
Ceramic Capacitor 0.1uF, 10%,
50V 0805 SMD
AVX
C1, C2, C5–C8
C9, C11
08055C104KAT2A
2
Tantalum Capacitor 2.2uF,10%,
20V, A-size
Kemet
Kemet
Vishay
T491A225K020AT
T491B106K020AT
CRCW08050000Z0EA
Not Stuff
Tantalum Capacitor 10uF,10%,
20V, B-size
C3, C4
2
6
R1, R4, R6, R9, R13,
R14
Resistor 0Ω, 1/8W 1% 0805 SMD
Header, 2-Pin
JP1, JP2, JP3, JP4 HDR1X2
Header 2
Header 3
Vishay
4
1
4
Header, 3-Pin
JP5
HDR1X3
CRCW080510K0FKEA
R2, R3, R7, R8
Resistor 10kΩ, 1/8W 1% 0805 SMD
National
Semiconductor
Dual Rail-to-Rail Op Amp
U1
LME49726
1
0
Resistor 100meg/open
1/8W 0805 SMD
R5, R10, R11, R12 OPEN N/A
N/A
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16
LME49726 Board Circuit
17
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LME49726 Demo Board Views
30038641
Top Silkscreen
300386x9
Top Layer
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18
300386x8
Bottom Layer
19
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Revision History
Rev
1.0
Date
Description
11/05/08
05/25/10
Initial release.
1.01
Increased Operating Temperature Range.
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20
Physical Dimensions inches (millimeters) unless otherwise noted
Mini-SOIC Exposed-DAP Package
Order Number LME49726MY
NS Package Number MUY08A
21
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Notes
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