LMH6639MA/NOPB [NSC]
IC OP-AMP, 7000 uV OFFSET-MAX, 90 MHz BAND WIDTH, PDSO8, SOIC-8, Operational Amplifier;
| 型号： | LMH6639MA/NOPB |
| 厂家： | 
National Semiconductor |
| 描述： | IC OP-AMP, 7000 uV OFFSET-MAX, 90 MHz BAND WIDTH, PDSO8, SOIC-8, Operational Amplifier 放大器 |
| 文件： | 总17页 (文件大小：645K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
July 2003
LMH6639
190MHz Rail-to-Rail Output Amplifier with Disable
General Description
Features
The LMH6639 is a voltage feedback operational amplifier
with a rail-to-rail output drive capability of 110mA. Employing
National’s patented VIP10 process, the LMH6639 delivers a
bandwidth of 190MHz at a current consumption of only
3.6mA. An input common mode voltage range extending to
0.2V below the V− and to within 1V of V+, makes the
LMH6639 a true single supply op-amp. The output voltage
range extends to within 30mV of either supply rail providing
the user with a dynamic range that is especially desirable in
low voltage applications.
(VS = 5V, Typical values unless specified)
n Supply current (no load)
n Supply current (off mode)
n Output resistance (closed loop 1MHz)
n −3dB BW (AV = 1)
3.6mA
400µA
0.186Ω
190MHz
33nsec
n Settling time
n Input common mode voltage
n Output voltage swing
−0.2V to 4V
40mV from rails
110mA
n Linear output current
n Total harmonic distortion
n Fully characterized for 3V, 5V and 5V
n No output phase reversal with CMVR exceeded
n Excellent overdrive recovery
n Off Isolation 1MHz
−60dBc
The LMH6639 offers a slew rate of 172V/µs resulting in a full
power bandwidth of approximately 28MHz. The TON value of
83nsec combined with a settling time of 33nsec makes this
device ideally suited for multiplexing applications. Careful
attention has been paid to ensure device stability under all
operating voltages and modes. The result is a very well
behaved frequency response characteristic for any gain set-
ting including +1, and excellent specifications for driving
video cables including harmonic distortion of −60dBc, differ-
ential gain of 0.12% and differential phase of 0.045˚
−70dB
0.12%
0.045˚
n Differential Gain
n Differential Phase
Applications
n Active filters
n CD/DVD ROM
n ADC buffer amplifier
n Portable video
n Current sense buffer
20030246
FIGURE 1. Typical Single Supply Schematic
© 2003 National Semiconductor Corporation
DS200302
www.national.com
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Junction Temperature (Note 4)
Soldering Information
+150˚C
Infrared or Convection (20 sec)
Wave Soldering (10 sec)
235˚C
260˚C
ESD Tolerance
2KV (Note 2)
200V (Note 9)
2.5V
Operating Ratings (Note 1)
VIN Differential
Operating Temperature Range (Note 4)
−40˚C to +85˚C
Input Current
10mA
Package Thermal Resistance (θJA) (Note 4)
Supply Voltage (V+ – V−)
Voltage at Input/Output pins
Storage Temperature Range
13.5V
V+ +0.8V, V− −0.8V
SOT23-6
SOIC-8
265˚C/W
190˚C/W
−65˚C to +150˚C
3V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for at TJ = 25˚C, V+ = 3V, V− = 0V, VO = VCM = V+/2, and RL = 2kΩ to V+/2.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
(Note 6)
120
Typ
(Note 5)
170
Max
(Note 6)
Units
BW
−3dB BW
AV = +1
AV = −1
MHz
63
BW0.1dB
FPBW
0.1dB Gain Flatness
Full Power Bandwidth
RF = 2.65kΩ , RL = 1kΩ,
AV = +1, VOUT = 2VPP, −1dB
V+ = 1.8V, V− = 1.2V
AV = +1
16.4
21
MHz
MHz
GBW
en
Gain Bandwidth product
83
19
MHz
Input-Referred Voltage Noise
RF = 33kΩ
f = 10kHz
nV/
pA/
dBc
f = 1MHz
f = 10kHz
f = 1MHz
16
in
Input-Referred Current Noise
Total Harmonic Distortion
RF = 1MΩ
1.30
0.36
−50
THD
f = 5MHz, VO = 2VPP, AV = +2,
RL = 1kΩ to V+/2
TS
Settling Time
VO = 2VPP
,
0.1%
37
ns
V/µs
mV
SR
VOS
Slew Rate
AV = −1 (Note 8)
120
167
1.01
Input Offset Voltage
5
7
TC VOS
IB
Input Offset Average Drift
Input Bias Current
(Note 11)
(Note 7)
8
µV/˚C
µA
−1.02
−2.6
−3.5
800
IOS
Input Offset Current
20
6.1
1.35
−0.3
2
nA
MΩ
pF
1000
RIN
Common Mode Input
Resistance
AV = +1, f = 1kHz, RS = 1MΩ
AV = +1, RS = 100kΩ
CIN
Common Mode Input
Capacitance
CMVR
Input Common-Mode Voltage CMRR ≥ 50dB
Range
−0.2
−0.1
V
1.8
1.6
72
CMRR
AVOL
Common Mode Rejection
Ratio
(Note 12)
93
dB
Large Signal Voltage Gain
VO = 2VPP, RL = 2kΩ to V+/2
VO = 2VPP, RL = 150Ω to V+/2
80
76
74
70
100
78
dB
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2
3V Electrical Characteristics (Continued)
Unless otherwise specified, all limits guaranteed for at TJ = 25˚C, V+ = 3V, V− = 0V, VO = VCM = V+/2, and RL = 2kΩ to V+/2.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
(Note 6)
2.90
Typ
(Note 5)
2.98
2.93
2.85
25
Max
(Note 6)
Units
VO
Output Swing
RL = 2kΩ to V+/2, VID = 200mV
RL = 150Ω to V+/2, VID = 200mV
RL = 50Ω to V+/2, VID = 200mV
RL = 2kΩ to V+/2, VID = −200mV
RL = 150Ω to V+/2, VID = −200mV
RL = 50Ω to V+/2, VID = −200mV
Sourcing to V+/2, (Note 10)
High
2.75
V
2.6
Output Swing
Low
75
75
200
300
mV
130
ISC
Output Short Circuit Current
50
35
67
40
120
mA
Sinking to V+/2, (Note 10)
140
IOUT
PSRR
IS
Output Current
VO = 0.5V from either supply
99
96
mA
dB
Power Supply Rejection Ratio (Note 12)
72
Supply Current (Enabled)
No Load
3.5
5.6
7.5
0.5
0.7
mA
V
Supply Current (Disabled)
0.3
TH_SD
Threshold Voltage for
Shutdown Mode
V+−1.59
I_SD PIN Shutdown Pin Input Current
SD Pin Connect to 0V (Note 7)
−13
83
µA
TON
On Time After Shutdown
Off Time to Shutdown
Output Resistance Closed
Loop
nsec
nsec
TOFF
ROUT
160
27
RF = 10kΩ, f = 1kHz, AV = −1
RF = 10kΩ, f = 1MHz, AV = −1
mΩ
266
5V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for at TJ = 25˚C, V+ = 5V, V− = 0V, VO = VCM = V+/2, and RL = 2kΩ to V+/2.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
(Note 6)
130
Typ
(Note 5)
190
64
Max
(Note 6)
Units
BW
−3dB BW
AV = +1
AV = −1
MHz
BW0.1dB
FPBW
GBW
en
0.1dB Gain Flatness
RF = 2.51kΩ, RL = 1kΩ,
AV = +1, VOUT = 2VPP, −1dB
AV = +1
16.4
28
MHz
MHz
MHz
Full Power Bandwidth
Gain Bandwidth Product
Input-Referred Voltage Noise
86
RF = 33kΩ
f = 10kHz
19
nV/
pA/
dBc
f = 1MHz
f = 10KHz
f = 1MHz
16
in
Input-Referred Current Noise
Total Harmonic Distortion
Differential Gain
RF = 1MΩ
1.35
0.35
−60
THD
DG
DP
f = 5MHz, VO = 2VPP, AV = +2
RL = 1kΩ to V+/2
NTSC, AV = +2
RL = 150Ω to V+/2
0.12
%
Differential Phase
NTSC, AV = +2
RL = 150Ω to V+/2
0.045
deg
TS
Settling Time
VO = 2VPP
,
0.1%
33
ns
SR
VOS
Slew Rate
AV = −1, (Note 8)
130
172
1.02
V/µs
Input Offset Voltage
5
mV
7
3
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5V Electrical Characteristics (Continued)
Unless otherwise specified, all limits guaranteed for at TJ = 25˚C, V+ = 5V, V− = 0V, VO = VCM = V+/2, and RL = 2kΩ to V+/2.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
(Note 6)
Typ
(Note 5)
8
Max
(Note 6)
Units
TC VOS
IB
Input Offset Average Drift
Input Bias Current
(Note 11)
(Note 7)
µV/˚C
µA
−1.2
−2.6
−3.25
800
IOS
Input Offset Current
20
6.88
1.32
−0.3
4
nA
MΩ
pF
1000
RIN
Common Mode Input
Resistance
AV = +1, f = 1kHz, RS = 1MΩ
AV = +1, RS = 100kΩ
CIN
Common Mode Input
Capacitance
CMVR
Common-Mode Input Voltage CMRR ≥ 50dB
−0.2
−0.1
3.8
Range
V
3.6
CMRR
AVOL
Common Mode Rejection
Ratio
(Note 12)
72
95
dB
Large Signal Voltage Gain
VO = 4VPP
RL = 2kΩ to V+/2
86
82
100
77
dB
VO = 3.75VPP
RL = 150Ω to V+/2
74
70
VO
Output Swing
High
RL = 2kΩ to V+/2, VID = 200mV
RL = 150Ω to V+/2, VID = 200mV
RL = 50Ω to V+/2, VID = 200mV
RL = 2kΩ to V+/2, VID = −200mV
RL = 150Ω to V+/2, VID = −200mV
RL = 50Ω to V+/2, VID = −200mV
Sourcing to V+/2, (Note 10)
4.90
4.65
4.40
4.97
4.90
4.77
25
V
Output Swing
Low
100
200
400
85
mV
190
160
ISC
Output Short Circuit Current
100
79
mA
Sinking from V+/2, (Note 10)
120
85
190
IOUT
PSRR
IS
Output Current
VO = 0.5V from either supply
110
96
mA
dB
Power Supply Rejection Ratio (Note 12)
72
Supply Current (Enabled)
No Load
3.6
5.8
8.0
0.8
1.0
mA
V
Supply Current (Disabled)
0.40
TH_SD
Threshold Voltage for
Shutdown Mode
V+ −1.65
I_SD PIN Shutdown Pin Input Current
SD Pin Connected to 0V (Note 7)
−30
83
µA
TON
On Time after Shutdown
Off Time to Shutdown
Output Resistance Closed
Loop
nsec
nsec
TOFF
ROUT
160
29
RF = 10kΩ, f = 1kHz, AV = −1
RF = 10kΩ, f = 1MHz, AV = −1
mΩ
253
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4
5V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for at TJ = 25˚C, VSUPPLY
=
5V, VO = VCM = GND, and RL = 2kΩ to V+/2.
Boldface limits apply at the temperature extremes.
Symbol
BW
Parameter
Conditions
Min
(Note 6)
150
Typ
(Note 5)
228
65
Max
(Note 6)
Units
−3dB BW
AV = +1
AV = −1
MHz
BW0.1dB
FPBW
GBW
en
0.1dB Gain Flatness
RF = 2.26kΩ, RL = 1kΩ
AV = +1, VOUT = 2VPP, −1dB
AV = +1
18
MHz
MHz
MHz
Full Power Bandwidth
Gain Bandwidth Product
Input-Referred Voltage Noise
29
90
RF = 33kΩ
f = 10kHz
f = 1MHz
f = 10kHz
f = 1MHz
19
nV/
pA/
dBc
16
in
Input-Referred Current Noise
Total Harmonic Distortion
Differential Gain
RF = 1MΩ
1.13
0.34
−71.2
THD
DG
DP
f = 5MHz, VO = 2VPP, AV = +2,
RL = 1kΩ
NTSC, AV = +2
RL = 150Ω
0.11
%
Differential Phase
NTSC, AV = +2
RL = 150Ω
0.053
deg
TS
Settling Time
VO = 2VPP
,
0.1%
33
ns
V/µs
mV
SR
VOS
Slew Rate
AV = −1 (Note 8)
140
200
1.03
Input Offset Voltage
5
7
TC VOS
IB
Input Offset Voltage Drift
Input Bias Current
(Note 11)
(Note 7)
8
µV/˚C
µA
−1.40
−2.6
−3.25
800
IOS
Input Offset Current
20
7.5
1.28
−5.3
4.0
95
nA
MΩ
pF
1000
RIN
Common Mode Input
Resistance
AV +1, f = 1kHz, RS = 1MΩ
AV = +1, RS = 100kΩ
CIN
Common Mode Input
Capacitance
CMVR
Common Mode Input Voltage CMRR ≥ 50dB
Range
−5.2
−5.1
V
3.8
3.6
72
CMRR
AVOL
Common Mode Rejection
Ratio
(Note 12)
dB
Large Signal Voltage Gain
VO = 9VPP, RL = 2kΩ
VO = 8VPP, RL = 150Ω
88
84
100
77
dB
74
70
VO
Output Swing
High
RL = 2kΩ, VID = 200mV
RL = 150Ω, VID = 200mV
RL = 50Ω, VID = 200mV
RL = 2kΩ, VID = −200mV
RL = 150Ω, VID = −200mV
RL = 50Ω, VID = −200mV
Sourcing to Ground, (Note 10)
4.85
4.55
3.60
4.96
4.80
V
V
4.55
Output Swing
Low
−4.97
−4.85
−4.65
168
−4.90
−4.55
−4.30
ISC
Output Short Circuit Current
100
80
mA
Sinking to Ground, (Note 10)
110
85
190
5
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5V Electrical Characteristics (Continued)
Unless otherwise specified, all limits guaranteed for at TJ = 25˚C, VSUPPLY
=
5V, VO = VCM = GND, and RL = 2kΩ to V+/2.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
(Note 6)
Typ
(Note 5)
112
Max
(Note 6)
Units
IOUT
Output Current
VO = 0.5V from either supply
mA
dB
PSRR
IS
Power Supply Rejection Ratio (Note 12)
72
96
Supply Current (Enabled)
No Load
4.18
6.5
8.5
1.0
1.3
mA
V
Supply Current (Disabled)
0.758
TH_SD
Threshold Voltage for
Shutdown Mode
V+ − 1.67
I_SD PIN Shutdown Pin Input Current
SD Pin Connected to −5V (Note 7)
−84
83
µA
TON
On Time after Shutdown
Off Time to Shutdown
Output Resistance Closed
Loop
nsec
nsec
TOFF
ROUT
160
32
RF = 10kΩ, f = 1kHz, AV = −1
RF = 10kΩ, f = 1MHz, AV = −1
mΩ
226
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.
Note 2: Human body model, 1.5kΩ in series with 100pF.
Note 3: Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the
maximum allowed junction temperature of 150˚C.
Note 4: The maximum power dissipation is a function of T
, θ , and T . The maximum allowable power dissipation at any ambient temperature is
J(MAX)
JA
A
P
= (T
- T )/ θ . All numbers apply for packages soldered directly onto a PC board.
D
J(MAX) A JA
Note 5: Typical values represent the most likely parametric norm.
Note 6: All limits are guaranteed by testing or statistical analysis.
Note 7: Positive current corresponds to current flowing into the device.
Note 8: Slew rate is the average of the rising and falling slew rates.
Note 9: Machine Model, 0Ω in series with 200pF.
Note 10: Short circuit test is a momentary test.
Note 11: Offset voltage average drift determined by dividing the change in V
Note 12: f ≤ 1kHz (see typical performance Characteristics)
at temperature extremes into the total temperature change.
OS
Connection Diagrams
SOT23-6
SOIC-8
20030202
20030201
Top View
Top View
Ordering Information
Package
Part Number
LMH6639MF
LMH6639MFX
LMH6639MA
LMH6639MAX
Package Marking
Transport Media
1k Units Tape and Reel
3k Units Tape and Reel
Rails
NSC Drawing
6-Pin SOT-23
A81A
MF06A
8-Pin SOIC
LMH6639MA
M08A
2.5k Units Tape and Reel
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6
Typical Performance Characteristics At TJ = 25˚C, V+ = +2.5, V− = −2.5V, RF = 330Ω for AV = +2,
RF = 1kΩ for AV = −1. Unless otherwise specified.
Output Sinking Saturation Voltage vs. IOUT
for Various Temperature
Output Sourcing Saturation Voltage vs. IOUT
for Various Temperature
20030237
20030239
Positive Output Saturation Voltage vs. VSUPPLY
for Various Temperature
Negative Output Saturation Voltage vs. VSUPPLY
for Various Temperature
20030234
20030233
VOUT from V+ vs. ISOURCE
VOUT from V− vs. ISINK
20030238
20030236
7
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Typical Performance Characteristics At TJ = 25˚C, V+ = +2.5, V− = −2.5V, RF = 330Ω for AV = +2,
RF = 1kΩ for AV = −1. Unless otherwise specified. (Continued)
IOS vs. VS for Various Temperature
VOS vs. VS for 3 Representative Units
20030232
20030245
VOS vs. VS for 3 Representative Units
VOS vs. VS for 3 Representative Units
20030244
20030243
VOS vs. VS for 3 Representative Units
ISUPPLY vs. VCM for Various Temperature
20030242
20030240
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8
Typical Performance Characteristics At TJ = 25˚C, V+ = +2.5, V− = −2.5V, RF = 330Ω for AV = +2,
RF = 1kΩ for AV = −1. Unless otherwise specified. (Continued)
ISUPPLY vs. VS for Various Temperature
IB vs. VS for Various Temperature
20030241
20030235
Bandwidth for Various VS
Bandwidth for Various VS
20030206
20030205
Gain vs. Frequency Normalized
Gain vs. Frequency Normalized
20030207
20030208
9
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Typical Performance Characteristics At TJ = 25˚C, V+ = +2.5, V− = −2.5V, RF = 330Ω for AV = +2,
RF = 1kΩ for AV = −1. Unless otherwise specified. (Continued)
Gain and phase vs.
0.1dB Gain Flatness
Frequency for Various Temperature
20030209
20030204
Frequency Response vs. Temperature
Harmonic Distortion
20030210
20030269
Differential Gain/Phase
On-Off Switching DC Voltage
20030211
20030270
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10
Typical Performance Characteristics At TJ = 25˚C, V+ = +2.5, V− = −2.5V, RF = 330Ω for AV = +2,
RF = 1kΩ for AV = −1. Unless otherwise specified. (Continued)
On-Off Switching 10MHz
Slew Rate (Negative)
Power Sweep
Slew Rate (Positive)
On-Off Switching of Sinewave
CMRR vs. Frequency
20030212
20030214
20030213
20030215
20030216
20030218
11
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Typical Performance Characteristics At TJ = 25˚C, V+ = +2.5, V− = −2.5V, RF = 330Ω for AV = +2,
RF = 1kΩ for AV = −1. Unless otherwise specified. (Continued)
PSRR vs. Frequency
Current Noise
20030217
20030220
Voltage Noise
Closed Loop Output Resistance vs. Frequency
20030221
20030219
Off Isolation
Small Signal Pulse Response (AV = +1, RL = 2k )
20030250
20030222
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Typical Performance Characteristics At TJ = 25˚C, V+ = +2.5, V− = −2.5V, RF = 330Ω for AV = +2,
RF = 1kΩ for AV = −1. Unless otherwise specified. (Continued)
Small Signal Pulse Response (AV = −1)
Large Signal Pulse Response (RL = 2k)
20030226
20030249
Large Signal Pulse Response
Large Signal Pulse Response
20030227
20030228
13
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In the circuit of Figure 2, the outputs of IC1 and IC2 are tied
together such that their output impedances are placed in
parallel at the input of IC3. The output impedance of the
disabled amplifier is high compared both to the output im-
pedance of the active amplifier and the 330Ω gain setting
resistors. The closed loop output resistance for the
LMH6639 is around 0.2Ω. Thus the active state amplifier
output impedance dominates the input node to IC3, while the
disabled amplifier is assured of a high level of suppression of
unwanted signals which might be present at the output.
Application Notes
MULTIPLEXING 5 AND 10MHz
The LMH6639 may be used to implement a circuit which
multiplexes two signals of different frequencies. Three
LMH6639 high speed op-amps are used in the circuit of
Figure 2 to accomplish the multiplexing function. Two
LMH6639 are used to provide gain for the input signals, and
the third device is used to provide output gain for the se-
lected signal.
SHUTDOWN OPERATION
With SD pin left floating, the device enters normal operation.
However, since the SD pin has high input impedance, it is
best tied to V+ for normal operation. This will avoid inadvert-
ent shutdown due to capacitive pick-up from nearby nodes.
LMH6639 will typically go into shutdown when SD pin is
more than 1.7V below V+, regardless of operating supplies.
The SD pin can be driven by push-pull or open collector
(open drain) output logic. Because the LMH6639’s shutdown
is referenced to V+, interfacing to the shutdown logic is
rather simple, for both single and dual supply operation, with
either form of logic used. Typical configurations are shown in
Figure 4 and Figure 5 below for push-pull output:
20030247
Note: Pin numbers pertain to SOIC-8 package
FIGURE 2. Multiplexer
Multiplexing signals “FREQ 1” and “FREQ 2” exhibit closed
loop non-inverting gain of +2 each based upon identical
330Ω resistors in the gain setting positions of IC1 and IC2.
The two multiplexing signals are combined at the input of
IC3, which is the third LMH6639. This amplifier may be used
as a unity gain buffer or may be used to set a particular gain
for the circuit.
20030271
FIGURE 4. Shutdown Interface (Single Supply)
20030248
FIGURE 3. Switching between 5 and 10MHz
1k resistors are used to set an inverting gain of −1 for IC3 in
the circuit of Figure 2. Figure 3 illustrates the waveforms
produced. The upper trace shows the switching waveform
used to switch between the 5MHz and 10MHz multiplex
signals. The lower trace shows the output waveform consist-
ing of 5MHz and 10MHz signals corresponding to the high or
low state of the switching signal.
20030272
FIGURE 5. Shutdown Interface (Dual Supplies)
Common voltages for logic gates are +5V or +3V. To ensure
proper power on/off with these supplies, the logic should be
able to swing to 3.4V and 1.4V minimum, respectively.
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14
PCB LAYOUT CONSIDERATION AND COMPONENTS
SELECTION
Application Notes (Continued)
LMH6639’s shutdown pin can also be easily controlled in
applications where the analog and digital sections are oper-
ated at different supplies. Figure 6 shows a configuration
where a logic output, SD, can turn the LMH6639 on and off,
independent of what supplies are used for the analog and
the digital sections:
Care should be taken while placing components on a PCB.
All standard rules should be followed especially the ones for
high frequency and/ or high gain designs. Input and output
pins should be separated to reduce cross-talk, especially
under high gain conditions. A groundplane will be helpful to
avoid oscillations. In addition, a ground plane can be used to
create micro-strip transmission lines for matching purposes.
Power supply, as well as shutdown pin de-coupling will
reduce cross-talk and chances of oscillations.
Another important parameter in working with high speed
amplifiers is the component values selection. Choosing high
value resistances reduces the cut-off frequency because of
the influence of parasitic capacitances. On the other hand
choosing the resistor values too low could "load down" the
nodes and will contribute to higher overall power dissipation.
Keeping resistor values at several hundreds of ohms up to
several kΩ will offer good performance.
National Semiconductor suggests the following evaluation
boards as a guide for high frequency layout and as an aid in
device testing and characterization:
20030273
Device
Package
Evaluation
Board PN
FIGURE 6. Shutdown Interface (Single Supply, Open
Collector Logic)
LMH6639MA
LMH6639MF
8-Pin SOIC
SOT23-6
CLC730027
CLC730116
The LMH6639 has an internal pull-up resistor on SD such
that if left un-connected, the device will be in normal opera-
tion. Therefore, no pull-up resistor is needed on this pin.
Another common application is where the transistor in Figure
6 above, would be internal to an open collector (open drain)
logic gate; the basic connections will remain the same as
shown.
These free evaluation boards are shipped when a device
sample request is placed with National Semiconductor. For
normal operation, tie the SD pin to V+.
15
www.national.com
Physical Dimensions inches (millimeters) unless otherwise noted
6-Pin SOT23
NS Package Number MF06A
8-Pin SOIC
NS Package Number M08A
www.national.com
16
Notes
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COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and
whose failure to perform when properly used in
accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a
significant injury to the user.
2. A critical component is any component of a life
support device or system whose failure to perform
can be reasonably expected to cause the failure of
the life support device or system, or to affect its
safety or effectiveness.
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National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
相关型号：
LMH6639MAX/NOPB
IC OP-AMP, 7000 uV OFFSET-MAX, 90 MHz BAND WIDTH, PDSO8, SOIC-8, Operational Amplifier
NSC
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