LMH6640MF [TI]
1 CHANNEL, VIDEO AMPLIFIER, PDSO5, SOT-23, 5 PIN;
| 型号： | LMH6640MF |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 1 CHANNEL, VIDEO AMPLIFIER, PDSO5, SOT-23, 5 PIN 放大器 PC 光电二极管 |
| 文件： | 总22页 (文件大小：1130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LMH6640
www.ti.com
SNOSAA0B –FEB 2004–REVISED MARCH 2013
LMH6640 TFT-LCD Single, 16V Rail-to-Rail High Output Operational Amplifier
Check for Samples: LMH6640
1
FEATURES
DESCRIPTION
23
•
(VS = 16V, RL= 2 kΩ to V+/2, 25°C, Typical
The LMH™6640 is a voltage feedback operational
amplifier with a rail-to-rail output drive capability of
100 mA. Employing TI’s patented VIP10 process, the
LMH6640 delivers a bandwidth of 190 MHz at a
current consumption of only 4mA. An input common
mode voltage range extending to 0.3V below the V−
and to within 0.9V of V+, makes the LMH6640 a true
single supply op-amp. The output voltage range
extends to within 100 mV of either supply rail
providing the user with a dynamic range that is
especially desirable in low voltage applications.
Values Unless Specified)
•
•
•
•
•
•
•
•
Supply current (no load) 4 mA
Output resistance (closed loop 1 MHz) 0.35Ω
−3 dB BW (AV = 1) 190 MHz
Settling time (±0.1%, 2 VPP) 35 ns
Input common mode voltage −0.3V to 15.1V
Output voltage swing 100 mV from rails
Linear output current ±100 mA
Total harmonic distortion (2 VPP, 5 MHz) −64
The LMH6640 offers a slew rate of 170 V/µs resulting
in a full power bandwidth of approximately 28 MHz
with 5V single supply (2 VPP, −1 dB). Careful
attention has been paid to ensure device stability
under all operating voltages and modes. The result is
dBc
•
•
•
•
Fully characterized for: 5V & 16V
No output phase reversal with CMVR exceeded
Differential gain (RL = 150Ω) 0.12%
Differential phase (RL = 150Ω) 0.12°
a
very well behaved frequency response
characteristic for any gain setting including +1, and
excellent specifications for driving video cables
including total harmonic distortion of −64 dBc @ 5
MHz, differential gain of 0.12% and differential phase
of 0.12°.
APPLICATIONS
•
•
•
•
•
•
TFT panel VCOM buffer amplifier
Active filters
CD/DVD ROM
ADC buffer amplifier
Portable video
Current sense buffer
R
F2
300W
R
F1
3 kW
10V - 16V
R
5
S
4
3
-
10W
TFT
PANEL
1
LMH6640
V
COM
+
±160 mA
2
POTENTIAL
Figure 1. Typical Application as a TFT Panel VCOM Driver
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
3
LMH is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2004–2013, Texas Instruments Incorporated
LMH6640
SNOSAA0B –FEB 2004–REVISED MARCH 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
(1)
Absolute Maximum Ratings
ESD Tolerance
(2)
Human Body Model
Machine Model
2 KV
200V
VIN Differential
±2.5V
Input Current
±10 mA
Supply Voltages (V+ – V−)
Voltage at Input/Output Pins
Storage Temperature Range
18V
V+ +0.8V, V− −0.8V
−65°C to +150°C
+150°C
(3)
Junction Temperature
Soldering Information
Infrared or Convection (20 sec.)
Wave Soldering (10 sec.)
235°C
260°C
(1) Absolute maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For specifications and the test conditions, see the
Electrical Characteristics.
(2) Human body model, 1.5 kΩ in series with 100 pF. Machine Model, 0Ω in series with 200 pF.
(3) The maximum power dissipation is a function of TJ(MAX), θJA , and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX)-TA ) / θJA. All numbers apply for packages soldered directly onto a PC board.
(1)
Operating Ratings
Supply Voltage (V+ – V−)
4.5V to 16V
(2)
Operating Temperature Range
−40°C to +85°C
(2)
Package Thermal Resistance
5-Pin SOT-23
265°C/W
(1) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150 °C Short circuit test is a momentary test. Output short circuit duration is
infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5 ms.
(2) The maximum power dissipation is a function of TJ(MAX), θJA , and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX)-TA ) / θJA. All numbers apply for packages soldered directly onto a PC board.
2
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SNOSAA0B –FEB 2004–REVISED MARCH 2013
5V Electrical Characteristics
Unless otherwise specified, All limits specified for TJ = 25°C, V+ = 5V, V− = 0V, VO = VCM = V+/2 and RL = 2 kΩ to V+/2.
(1)
Boldface limits apply at temperature extremes.
Symbol
BW
Parameter
−3 dB Bandwidth
Conditions
AV = +1 (RL = 100Ω)
Min(2)
Typ(3)
150
58
Max(2)
Units
MHz
AV = −1 (RL = 100Ω)
AV = −3
BW0.1 dB
FPBW
LSBW
GBW
SR
0.1 dB Gain Flatness
Full Power Bandwidth
-3 dB Bandwidth
18
MHz
MHz
MHz
MHz
V/μs
AV = +1, VOUT = 2 VPP, −1 dB
AV = +1, VO = 2 VPP (RL = 100Ω)
AV = +1, (RL = 100Ω)
AV = −1
28
32
Gain Bandwidth Product
59
(4)
Slew Rate
170
23
en
Input Referred Voltage Noise
Input Referred Current Noise
Total Harmonic Distortion
f = 10 kHz
f = 1 MHz
f = 10 kHz
f = 1 MHz
nV/√Hz
pA/√Hz
15
in
1.1
0.7
–65
THD
f = 5 MHz, VO = 2 VPP, AV = +2
dBc
ns
RL = 1 kΩ to V+/2
ts
Settling Time
VO = 2 VPP, ±0.1%, AV = −1
35
1
VOS
Input Offset Voltage
5
7
mV
(5)
IB
Input Bias Current
−1.2
34
−2.6
−3.25
μA
IOS
Input Offset Current
800
nA
1400
CMVR
Common Mode Input Voltage
Range
CMRR ≥ 50 dB
–0.3
4.1
–0.2
–0.1
V
4.0
3.6
CMRR
AVOL
Common Mode Rejection Ratio
Large Signal Voltage Gain
V− ≤ VCM ≤ V+ −1.5V
VO = 4 VPP, RL = 2 kΩ to V+/2
72
90
95
dB
dB
86
82
VO = 3.75 VPP, RL = 150Ω to V+/2
74
78
70
VO
Output Swing High
Output Swing Low
RL = 2 kΩ to V+/2
RL = 150Ω to V+/2
RL = 2 kΩ to V+/2
RL = 150Ω to V+/2
Sourcing to V+/2
4.90
4.75
4.94
4.80
0.06
0.20
130
V
0.10
0.25
(6)
ISC
Output Short Circuit Current
100
75
mA
Sinking from V+/2
100
130
70
IOUT
PSRR
IS
Output Current
VO = 0.5V from either Supply
4V ≤ V+ ≤ 6V
+75/−90
80
mA
dB
Power Supply Rejection Ratio
Supply Current
72
No Load
3.7
5.5
mA
8.0
RIN
Common Mode Input Resistance
AV = +1, f = 1 kHz, RS = 1 MΩ
15
MΩ
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. Parametric performance is indicated in the electrical tables under conditions of
internal self-heating where TJ > TA.
(2) All limits are specified by testing or statistical analysis.
(3) Typical Values represent the most likely parametric norm.
(4) Slew rate is the average of the rising and falling slew rates
(5) Positive current corresponds to current flowing into the device.
(6) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150 °C Short circuit test is a momentary test. Output short circuit duration is
infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5 ms.
Copyright © 2004–2013, Texas Instruments Incorporated
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5V Electrical Characteristics (continued)
Unless otherwise specified, All limits specified for TJ = 25°C, V+ = 5V, V− = 0V, VO = VCM = V+/2 and RL = 2 kΩ to V+/2.
Boldface limits apply at temperature extremes. (1)
Symbol
CIN
Parameter
Conditions
Min(2)
Typ(3)
1.7
Max(2)
Units
Common Mode Input Capacitance AV = +1, RS = 100 kΩ
pF
ROUT
Output Resistance Closed Loop
RF = 10 kΩ, f = 1 kHz, AV = −1
0.1
Ω
RF = 10 kΩ, f = 1 MHz, AV = −1
0.4
DG
DP
Differential Gain
NTSC, AV = +2
0.13
%
RL = 150Ω to V+/2
Differential Phase
NTSC, AV = +2
0.10
deg
RL = 150Ω to V+/2
4
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SNOSAA0B –FEB 2004–REVISED MARCH 2013
16V Electrical Characteristics
Unless otherwise specified, All limits specified for TJ = 25°C, V+ = 16V, V− = 0V, VO = VCM = V+/2 and RL = 2 kΩ to V+/2.
(1)
Boldface limits apply at temperature extremes.
Symbol
BW
Parameter
−3 dB Bandwidth
Conditions
AV = +1 (RL = 100Ω)
Min(2)
Typ(3)
190
60
Max(2)
Units
MHz
AV = −1 (RL = 100Ω)
AV = −2.7
BW0.1 dB
LSBW
GBW
SR
0.1 dB Gain Flatness
-3 dB Bandwidth
20
MHz
MHz
MHz
V/μs
AV = +1, VO = 2 VPP (RL = 100Ω)
AV = +1, (RL = 100Ω)
AV = −1
35
Gain Bandwidth Product
62
(4)
Slew Rate
170
23
en
Input Referred Voltage Noise
Input Referred Current Noise
Total Harmonic Distortion
f = 10 kHz
f = 1 MHz
f = 10 kHz
f = 1 MHz
nV/√Hz
pA/√Hz
15
in
1.1
0.7
–64
THD
f = 5 MHz, VO = 2 VPP, AV = +2
dBc
ns
RL = 1 kΩ to V+/2
ts
Settling Time
VO = 2 VPP, ±0.1%, AV = −1
35
1
VOS
Input Offset Voltage
5
7
mV
(5)
IB
Input Bias Current
−1
34
−2.6
−3.5
μA
IOS
Input Offset Current
800
nA
1800
CMVR
Common Mode Input Voltage
Range
CMRR ≥ 50 dB
–0.3
15.1
−0.2
−0.1
V
15.0
14.6
CMRR
AVOL
Common Mode Rejection Ratio
Large Signal Voltage Gain
V− ≤ VCM ≤ V+ −1.5V
VO = 15 VPP, RL = 2 kΩ to V+/2
72
90
95
dB
dB
86
82
VO = 14 VPP, RL = 150Ω to V+/2
74
78
70
VO
Output Swing High
Output Swing Low
RL = 2 kΩ to V+/2
RL = 150Ω to V+/2
RL = 2 kΩ to V+/2
RL = 150Ω to V+/2
Sourcing to V+/2
15.85
15.45
15.90
15.78
0.10
0.21
95
V
0.15
0.55
(6)
ISC
Output Short Circuit Current
60
30
mA
Sinking from V+/2
50
75
15
IOUT
PSRR
IS
Output Current
VO = 0.5V from either Supply
15V ≤ V+ ≤ 17V
±100
80
mA
dB
Power Supply Rejection Ratio
Supply Current
72
No Load
4
6.5
7.8
mA
RIN
CIN
Common Mode Input Resistance
AV = +1, f = 1 kHz, RS = 1 MΩ
32
MΩ
Common Mode Input Capacitance AV = +1, RS = 100 kΩ
1.7
pF
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. Parametric performance is indicated in the electrical tables under conditions of
internal self-heating where TJ > TA.
(2) All limits are specified by testing or statistical analysis.
(3) Typical Values represent the most likely parametric norm.
(4) Slew rate is the average of the rising and falling slew rates
(5) Positive current corresponds to current flowing into the device.
(6) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150 °C Short circuit test is a momentary test. Output short circuit duration is
infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5 ms.
Copyright © 2004–2013, Texas Instruments Incorporated
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16V Electrical Characteristics (continued)
Unless otherwise specified, All limits specified for TJ = 25°C, V+ = 16V, V− = 0V, VO = VCM = V+/2 and RL = 2 kΩ to V+/2.
Boldface limits apply at temperature extremes. (1)
Symbol
ROUT
Parameter
Conditions
RF = 10 kΩ, f = 1 kHz, AV = −1
RF = 10 kΩ, f = 1 MHz, AV = −1
Min(2)
Typ(3)
0.1
Max(2)
Units
Output Resistance Closed Loop
Ω
0.3
DG
DP
Differential Gain
NTSC, AV = +2
0.12
%
RL = 150Ω to V+/2
Differential Phase
NTSC, AV = +2
0.12
deg
RL = 150Ω to V+/2
CONNECTION DIAGRAM
5 Pin SOT-23
Top View
See Package Number DBV0005A
6
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SNOSAA0B –FEB 2004–REVISED MARCH 2013
Typical Performance Characteristics
At TJ = 25°C, V+ = 16 V, V− = 0V, RF = 330Ω for AV= +2, RF = 1 kΩ for AV = −1. RL tied to V+/2. Unless otherwise specified.
IS vs.
IS vs.
VS for Various Temperature
VCM for Various Temperature
7
6.5
6
7
6.5
6
V
S
= ±8V
125°C
125°C
5.5
5
5.5
5
85°C
85°C
4.5
4
4.5
25°C
4
25°C
3.5
3.5
3
3
-40°C
2.5
2
2.5
2
-40°C
-10 -8 -6 -4 -2
0
2
4
6
8
10
2
4
6
8
10 12 14 16 18
(V)
V
(V)
CM
V
S
Figure 2.
Figure 3.
IB vs.
IB vs.
VS for Various Temperature
VS for Various Temperature
-0.5
-0.5
-40°C
25°C
-0.75
0.75
25°C
-40°C
-1
-1.25
-1.5
-1
-1.25
-1.5
85°C
85°C
125°C
POSITIVE INPUT
125°C
-1.75
-2
-1.75
-2
NEGATIVE INPUT
2
4
6
8
10 12 14 16 18
2
4
6
8
10 12 14 16 18
V (V)
S
V
(V)
S
Figure 4.
Figure 5.
VOS vs.
IOS vs.
VS for Various Temperature (Typical Unit)
VS for Various Temperature
-1
0
-10
-20
-1.25
-40°C
25°C
85°C
-1.5
-30
-40
25°C
-1.75
-50
-60
125°C
85°C
-2
-40°C
125°C
-70
-80
-90
-2.25
-2.5
2
4
6
8
10 12 14 16 18
2
4
6
8
10 12 14 16 18
(V)
V
S
V
(V)
S
Figure 6.
Figure 7.
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Typical Performance Characteristics (continued)
At TJ = 25°C, V+ = 16 V, V− = 0V, RF = 330Ω for AV= +2, RF = 1 kΩ for AV = −1. RL tied to V+/2. Unless otherwise specified.
Positive Output Saturation Voltage vs.
VS for Various Temperature
Negative Output Saturation Voltage vs.
VS for Various Temperature
350
300
125°C
R
L
= 150W
R
L
= 150W
300
250
250
125°C
85°C
85°C
200
150
100
200
150
100
50
-40°C
-40°C
25°C
25°C
50
0
0
2
4
6
8
10 12 14 16 18
(V)
2
4
6
8
10 12 14 16 18
V (V)
S
V
S
Figure 8.
Figure 9.
Output Sinking Saturation Voltage vs.
ISINKING for Various Temperature
Output Sourcing Saturation Voltage vs.
ISOURCING for Various Temperature
10
10
V
= 16V
V
= 16V
S
S
-40°C
-40°C
1
1
0.1
125°C
125°C
85°C
85°C
0.1
0.01
25°C
25°C
-40°C
10
-40°C
0.01
1
10
I
100
(mA)
1000
1
100
1000
I
(mA)
SINKING
SOURCING
Figure 10.
Figure 11.
Input Current Noise vs.
Frequency
Input Voltage Noise vs.
Frequency
4
3
2
50
40
30
20
10
0
V
= 5V
S
V
S
= 5V
1
0
1
10
100
1000
1
10
100
1000
FREQUENCY (kHz)
FREQUENCY (kHz)
Figure 12.
Figure 13.
8
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SNOSAA0B –FEB 2004–REVISED MARCH 2013
Typical Performance Characteristics (continued)
At TJ = 25°C, V+ = 16 V, V− = 0V, RF = 330Ω for AV= +2, RF = 1 kΩ for AV = −1. RL tied to V+/2. Unless otherwise specified.
Gain vs. Frequency Normalized
Gain vs. Frequency Normalized
(PIN= −30 dBm)
(PIN=−30dBm)
5
0
5
0
A
V
= +1
A
= -1
V
-5
-5
A
= +10
A
= -10
V
V
-10
-15
-20
-25
-30
-35
-40
-45
-10
-15
-20
-25
-30
-35
-40
-45
A
= -5
A = +5
V
V
A
= -2
V
A = +2
V
V
= 16V
V
= 16V
S
S
R
= 100W
R
= 100W
L
L
100k
1M
10M
100M
1G
100k
1M
10M
100M
1G
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 14.
Figure 15.
Gain vs. Frequency for Various VS
Gain vs. Frequency for Various VS
(PIN = −30 dBm)
(PIN = −30 dBm)
6
0
6
3
5V
5V
-6
0
-12
-18
-24
-30
-36
-42
-3
16V
-6
16V
5V
-9
5V
-12
-15
-18
A
= -1
A
= +1
V
V
R
= 100W
R
= 100W
L
L
100k
1M
10M
100M
1G
100k
1M
10M
100M
1G
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 16.
Figure 17.
Open Loop Gain & Phase vs. Frequency for Various
Temperature
Relative Gain vs. Frequency for Various Temperature
(PIN = −30 dBm)
(PIN = −10 dBm)
70
60
50
40
30
20
10
0
140
120
100
80
5
85°C
25°C
0
-5
PHASE
-40°C
85°C
60
40
-10
-15
-20
-25
GAIN
20
25°C
0
-10
-20
-30
-20
-40
-60
A
= +1
V
-40°C
R
= 100W
L
1M
10M
100M
1G
100k
1M
10M
100M
1G
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 18.
Figure 19.
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Typical Performance Characteristics (continued)
At TJ = 25°C, V+ = 16 V, V− = 0V, RF = 330Ω for AV= +2, RF = 1 kΩ for AV = −1. RL tied to V+/2. Unless otherwise specified.
Large Signal Transition
Large Signal Transition
1.5
1
1.5
1
R
L
= 2 kW
R
= 2 kW
L
0.5
0
0.5
0
-0.5
-1
-0.5
-1
-1.5
-1.5
TIME (10 ns/DIV)
TIME (10 ns/DIV)
Figure 20.
Figure 21.
Small Signal Pulse Response
Small Signal Pulse Response
A
V
= -1
A
V
= +1
V
S
V
S
= 5V
= 5V
R
= 2 kW
= 10 pF
R
C
= 2 kW
= 10 pF
L
L
L
L
C
50 ns/DIV
50 ns/DIV
Figure 22.
Figure 23.
Large Signal Pulse Response
Large Signal Pulse Response
A
V
= +1
A
V
= +1
V
S
V
S
= +5V
= 100W
= 16V
= 100W
R
R
L
L
50 ns/DIV
50 ns/DIV
Figure 24.
Figure 25.
10
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SNOSAA0B –FEB 2004–REVISED MARCH 2013
Typical Performance Characteristics (continued)
At TJ = 25°C, V+ = 16 V, V− = 0V, RF = 330Ω for AV= +2, RF = 1 kΩ for AV = −1. RL tied to V+/2. Unless otherwise specified.
PSRR vs.
Frequency
CMRR vs.
Frequency
100
90
80
70
60
50
40
30
20
10
0
0
10
20
30
40
50
60
70
POSITIVE
NEGATIVE
+5V
80
90
V
A
= 5V
= +1
S
V
+16V
100
10k
1M
10
1k
100k
10M
100
10
100
1k
10k
100k 1M 10M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 27.
Figure 26.
Closed Loop Output Resistance vs.
Frequency
Harmonic Distortion
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-40
-50
A
= -1
5V
V
THD
R
= R = 10 kW
F
S
16V
3RD
-60
-70
2ND
-80
f = 5 MHz
0.3
0.2
4TH
A
V
= +2
-90
R
= 1 kW
= 5V
L
0.1
0.0
V
S
-100
100k
100
1k
10k
1M
10M
1
1.5
2
2.5
3
3.5
4
FREQUENCY (Hz)
OUTPUT VOLTAGE (V
)
PP
Figure 28.
Figure 29.
0.1 dB Gain Flatness vs.
Frequency Normalized
Output Power vs.
Input Power (AV = +1)
15
10
0.2
0.1
0
10 MHz
1 MHz
16V
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
25 MHz
50 MHz
5V
5
0
100 MHz
-5
A
A
= -3 @ V = 5V
S
V
= -2.7 @ V = 16V
V
S
-10
10k
100k
1M
10M
100M
-10
-5
0
5
10
15
FREQUENCY (Hz)
INPUT POWER (dBm)
Figure 30.
Figure 31.
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Typical Performance Characteristics (continued)
At TJ = 25°C, V+ = 16 V, V− = 0V, RF = 330Ω for AV= +2, RF = 1 kΩ for AV = −1. RL tied to V+/2. Unless otherwise specified.
Differential Gain/Phase vs.
IRE
0.15
0.12
0.09
0.06
0.03
0.1
A
V
= +2
V
0.08
0.06
0.04
0.02
0
= 5V
S
R
= 150W
L
f = 3.58 MHz
PHASE
0
-0.02
-0.04
-0.03
-0.06
-0.09
-0.12
-0.15
-0.06
-0.08
-0.1
GAIN
-100 -75 -50 -25
0
25 50 75 100
IRE
Figure 32.
12
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LMH6640
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SNOSAA0B –FEB 2004–REVISED MARCH 2013
APPLICATION INFORMATION
Application Notes
With its high output current and speed, one of the major applications for the LMH6640 is the VCOM driver in a TFT
panel. This application is a specially taxing one because of the demands it places on the operational amplifier’s
output to drive a large amount of bi-directional current into a heavy capacitive load while operating under unity
gain condition, which is a difficult challenge due to loop stability reasons. For a more detailed explanation of what
a TFT panel is and what its amplifier requirements are, please see the Application Notes section of the LM6584
found on the web at: http://www.ti.com/lit/pdf/snosb08
Because of the complexity of the TFT VCOM waveform and the wide variation in characteristics between different
TFT panels, it is difficult to decipher the results of circuit testing in an actual panel. The ability to make simplifying
assumptions about the load in order to test the amplifier on the bench allows testing using standard equipment
and provides familiar results which could be interpreted using standard loop analysis techniques. This is what
has been done in this application note with regard to the LMH6640’s performance when subjected to the
conditions found in a TFT VCOM application.
Figure 33, shows a typical simplified VCOM application with the LMH6640 buffering the VCOM potential (which is
usually around ½ of panel supply voltage) and looking into the simplified model of the load. The load represents
the cumulative effect of all stray capacitances between the VCOM node and both row and column lines.
Associated with the capacitances shown, is the distributed resistance of the lines to each individual transistor
switch. The other end of this R-C ladder is driven by the column driver in an actual panel and here is driven with
a low impedance MOSFET driver (labeled “High Current Driver”) for the purposes of this bench test to simulate
the effect that the column driver exerts on the VCOM load.
The modeled TFT VCOM load, shown in Figure 33, is based on the following simplifying assumptions in order to
allow for easy bench testing and yet allow good matching results obtained in the actual application:
•
The sum of all the capacitors and resistors in the R-C ladder is the total VCOM capacitance and resistance
respectively. This total varies from panel to panel; capacitance could range from 50 nF-200 nF and the
resistance could be anywhere from 20Ω-100Ω.
•
The number of ladder sections has been reduced to a number (4 sections in this case) which can easily be
put together in the lab and which behaves reasonably close to the actual load.
In this example, the LMH6640 was tested under the simulated conditions of total 209 nF capacitance and 54Ω as
shown in Figure 33.
R
F2
300W
R
F1
3 kW
R
S
R
R
R
3
1
2
V
OUT
10W
18W
18W
18W
-
+
I
OUT
47n
C3
47n
C4
47n
C2
68n
C1
HIGH
CURRENT
DRIVER
Figure 33. LMH6640 in a VCOM Buffer Application with Simulated TFT Load
RS is sometimes used in the panel to provide additional isolation from the load while RF2 provides a more direct
feedback from the VCOM. RF1, RF2, and RS are trimmed in the actual circuit with settling time and stability trade-
offs considered and evaluated. When tested under simulated load conditions of Figure 33, here are the resultant
voltage and current waveforms at the LMH6640 output:
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V
(5V/DIV)
HIGH CURRENT
DRIVER (5V/Div)
OUT
V
(5V/Div)
OUT
0
0
0
0
0
HIGH CURRENT DRIVE (5V/DIV)
I
(100 mA/Div)
(POSITIVE IS
SOURCING)
OUT
I
(100 mA/DIV)
OUT
(POSITIVE IS SOURCING
0
2 ms/DIV
5 ms/DIV
Figure 34. VCOM Output, High Current Drive
Waveform, & LMH6640 Output Current Waveforms
Figure 35. Expanded View of Figure 34 Waveforms
showing LMH6640 Current Sinking ½ Cycle
As can be seen, the LMH6640 is capable of supplying up to 160 mA of output current and can settle the output
in 4.4 μs.
The LMH6640 is a cost effective amplifier for use in the TFT VCOM application and is made even more attractive
by its large supply voltage range and high output current. The combination of all these features is not readily
available in the market, especially in the space saving SOT-23 5 pin package. All this performance is achieved at
the low power consumption of 65 mW which is of utmost importance in today’s battery driven TFT panels.
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SNOSAA0B –FEB 2004–REVISED MARCH 2013
REVISION HISTORY
Changes from Revision A (March 2013) to Revision B
Page
•
Changed layout of National Data Sheet to TI format .......................................................................................................... 14
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PACKAGE OPTION ADDENDUM
www.ti.com
7-Oct-2013
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan Lead/Ball Finish
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
1000
1000
(1)
(2)
(3)
(4/5)
LMH6640MF
NRND
NRND
SOT-23
SOT-23
DBV
5
5
TBD
Call TI
CU SN
Call TI
-40 to 85
-40 to 85
AH1A
AH1A
LMH6640MF/NOPB
DBV
Green (RoHS
& no Sb/Br)
Level-1-260C-UNLIM
LMH6640MFX/NOPB
NRND
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
AH1A
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
7-Oct-2013
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
23-Sep-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LMH6640MF
SOT-23
SOT-23
SOT-23
DBV
DBV
DBV
5
5
5
1000
1000
3000
178.0
178.0
178.0
8.4
8.4
8.4
3.2
3.2
3.2
3.2
3.2
3.2
1.4
1.4
1.4
4.0
4.0
4.0
8.0
8.0
8.0
Q3
Q3
Q3
LMH6640MF/NOPB
LMH6640MFX/NOPB
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
23-Sep-2013
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
LMH6640MF
SOT-23
SOT-23
SOT-23
DBV
DBV
DBV
5
5
5
1000
1000
3000
210.0
210.0
210.0
185.0
185.0
185.0
35.0
35.0
35.0
LMH6640MF/NOPB
LMH6640MFX/NOPB
Pack Materials-Page 2
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