NTE1235 [NTE]
Integrated Circuit Squelch Amp; 集成电路静噪放大器
| 型号： | NTE1235 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Integrated Circuit Squelch Amp |
| 文件： | 总2页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE1235
Integrated Circuit
Squelch Amp
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17V
Collector–Substrate Voltage, VCIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3mW/°C
Supply Current, ICC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30 to +75°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Electrical Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Base Voltage
Collector–Emitter Voltage
Collector Substrate Voltage
Emitter–Base Voltage
Collector Cutoff Current
DC Current Gain
VCBO IC = 10µA, IE = 0
VCEO IC = 0.1mA, IB = 0
VCIO IC = 10µA, IC1 = 0
VEBO IE = 10µA, IC = 0
20
17
20
5
–
–
–
–
–
–
–
–
–
–
–
–
V
V
V
V
ICBO
hFE
VCB = 15V, IE = 0
VCE = 15V, IE = 0
–
0.5 µA
70
–
400
0.5
1
–
V
V
Collector–Emitter Sat. Voltage VCE(sat) IC = 10mA, IB = 1mA
Base–Emitter Sat. Voltage
VBE(sat) IC = 10mA, IB = 1mA
–
Output Capacitor
Q1
–
–
2.5
5.0
–
–
–
pF
pF
CCB
VCE = 5V, f = 1mHz
Q2
Current Bandwidth Product
Noise Figure
fT
VCE = 5V, IC = 1mA
200
–
–
MHz
dB
V
NF
VF
VCE = 5V, IE = 1mA, Rg = 50Ω, f = 1MHz
IF = 1mA
6
–
Forward Voltage
1.2
–
1.4
Pin Connection Diagram
7 Q2 Collector
6
5
Q2 Emitter
D1 Anode
4 D2 Cathode
Q1 Emitter
Q1 Base
3
2
1
Q1 Collector
.128 (3.2)
.700 (17.8) Max
.323
(8.2)
Max
1
7
.099 (2.5)
Min
.012 (0.25)
.100 (2.54)
.600 (15.24)
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